JP6843885B2 - 複数の窒化ガリウムダイオードを備えた光電子デバイスを製造する方法 - Google Patents
複数の窒化ガリウムダイオードを備えた光電子デバイスを製造する方法 Download PDFInfo
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- JP6843885B2 JP6843885B2 JP2018560010A JP2018560010A JP6843885B2 JP 6843885 B2 JP6843885 B2 JP 6843885B2 JP 2018560010 A JP2018560010 A JP 2018560010A JP 2018560010 A JP2018560010 A JP 2018560010A JP 6843885 B2 JP6843885 B2 JP 6843885B2
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- 229910002601 GaN Inorganic materials 0.000 title claims description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 230000005693 optoelectronics Effects 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 103
- 239000002184 metal Substances 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910005887 NiSn Inorganic materials 0.000 claims description 3
- 229910008487 TiSn Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 230000003796 beauty Effects 0.000 claims 1
- 239000002932 luster Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 110
- 230000008569 process Effects 0.000 description 35
- 230000003287 optical effect Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000027455 binding Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009149 molecular binding Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- -1 gallium nitrides Chemical class 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Description
LED を流れる電流を、例えば個々に制御可能とすべくLED に接続されるように構成された複数の金属パッドを表面に備えた集積回路の形態の制御回路をまず形成し、
次に、反対の導電型にドープされた少なくとも第1及び第2の窒化ガリウム層を備えた窒化ガリウムLED 活性積層体を、金属パッドを備えた制御回路の表面に、窒化ガリウムLED 活性積層体の第1及び第2の窒化ガリウム層の一方が制御回路の金属パッドと電気的に接するように置き、
その後、窒化ガリウムLED 活性積層体を構造化して、窒化ガリウムLED 活性積層体に光電子デバイスの別個のLED を画定する。
Claims (15)
- 光電子デバイスを製造する方法であって、
a) 複数の接続用金属パッドを有して半導体基板の内側及び最上部に既に形成されている集積型制御回路の表面に、反対の導電型にドープされた少なくとも第1の半導体層及び第2の半導体層を有する活性ダイオード積層体を、前記活性ダイオード積層体の前記第2の半導体層が前記制御回路の前記金属パッドに電気的に接続されるように移す工程、及び
b) 前記制御回路の異なる金属パッドに接続された複数のダイオードを画定するトレンチを前記活性ダイオード積層体に形成する工程
を順次的に有し、
工程a)の後であって、工程b)の前に、前記活性ダイオード積層体は前記制御回路の表面全体を連続して覆っていることを特徴とする方法。 - 工程a)の前に、
前記金属パッドの側に前記制御回路の実質的に表面全体に亘って少なくとも1つの第1の金属層を成膜する工程、及び
前記第1の半導体層と反対の前記第2の半導体層の実質的に表面全体に亘って少なくとも1つの第2の金属層を成膜する工程
の少なくとも1つを更に有することを特徴とする請求項1に記載の方法。 - 前記第1の金属層及び前記第2の金属層の少なくとも一方は銀の反射層を有することを特徴とする請求項2に記載の方法。
- 前記第1の金属層及び前記第2の金属層の少なくとも一方は、TaN 、TiN 、WN、TiW 又はこれらの材料の一若しくは複数の組み合わせから形成された障壁層を有することを特徴とする請求項2又は3に記載の方法。
- 前記第1の金属層及び前記第2の金属層の少なくとも一方は、Ti、Ni、Pt、Sn、Au、Ag、Al、Pd、W 、Pb、Cu、AuSn、TiSn、NiSn又はこれらの材料の全て若しくは一部の合金から形成された結合層を有することを特徴とする請求項2〜4のいずれか一項に記載の方法。
- 工程b)で形成された前記トレンチは、前記第1の金属層及び前記第2の金属層を横切って前記活性ダイオード積層体の高さ全体に亘って延びていることを特徴とする請求項2〜5のいずれか一項に記載の方法。
- 工程a)の実行中、前記活性ダイオード積層体は、前記第2の半導体層と反対の前記第1の半導体層の側に設けられた支持基板に支持されており、
工程a)と工程b)との間に前記支持基板を除去する工程を更に有することを特徴とする請求項1〜6のいずれか一項に記載の方法。 - 工程b)の後、前記第2の半導体層と反対の前記第1の半導体層の表面の最上部で前記第1の半導体層の表面と接する電極を各ダイオード上に成膜する工程を更に有することを特徴とする請求項1〜7のいずれか一項に記載の方法。
- 前記電極は、各ダイオードのレベルで前記第2の半導体層と反対の前記第1の半導体層の表面が前記ダイオードの周縁部分で金属グリッドと接して、前記第1の半導体層の表面が前記ダイオードの中央部分では前記金属グリッドで覆われていないように配置された連続的な前記金属グリッドを形成することを特徴とする請求項8に記載の方法。
- 前記電極は、前記光電子デバイスの表面全体を実質的に覆って、透明な導電性材料から形成された連続的な層を形成することを特徴とする請求項8に記載の方法。
- 半導体の前記ダイオードは発光ダイオードであることを特徴とする請求項1〜10のいずれか一項に記載の方法。
- 工程b)の後、前記制御回路と反対の前記光電子デバイスの表面に、前記光電子デバイスの表面全体を実質的に覆う多重量子井戸を有する光輝性変換積層体を移す工程を更に有することを特徴とする請求項11に記載の方法。
- 前記光輝性変換積層体を移した後、前記半導体のダイオードの一部と対向する前記光輝性変換積層体の部分のみを除去する工程を更に有することを特徴とする請求項12に記載の方法。
- 前記ダイオードはフォトダイオードであることを特徴とする請求項1〜10のいずれか一項に記載の方法。
- 前記第1の半導体層及び前記第2の半導体層は窒化ガリウム層であり、前記ダイオードは窒化ガリウムダイオードであることを特徴とする請求項1〜14のいずれか一項に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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PCT/FR2016/051140 WO2017194845A1 (fr) | 2016-05-13 | 2016-05-13 | Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes au nitrure de gallium |
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JP2019522894A JP2019522894A (ja) | 2019-08-15 |
JP6843885B2 true JP6843885B2 (ja) | 2021-03-17 |
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US (1) | US10734439B2 (ja) |
EP (2) | EP3913680A1 (ja) |
JP (1) | JP6843885B2 (ja) |
KR (1) | KR102574122B1 (ja) |
CN (1) | CN109564930B (ja) |
ES (1) | ES2896179T3 (ja) |
TW (1) | TWI716595B (ja) |
WO (1) | WO2017194845A1 (ja) |
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FR3063163B1 (fr) | 2017-02-21 | 2021-10-08 | Commissariat Energie Atomique | Capteur d'empreinte a led au nitrure de gallium. |
FR3086100B1 (fr) | 2018-09-13 | 2022-08-12 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes |
FR3086399B1 (fr) | 2018-09-24 | 2021-09-17 | Commissariat Energie Atomique | Systeme de vision en realite virtuelle ou augmentee avec capteur d'image de l'œil, et procede associe |
FR3091030B1 (fr) | 2018-12-19 | 2021-01-08 | Commissariat Energie Atomique | Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes |
FR3094568B1 (fr) * | 2019-03-29 | 2022-04-22 | Commissariat Energie Atomique | Procédé de fabrication d'un écran d'affichage émissif à LED tridimensionnelles |
CN111863853A (zh) * | 2019-04-24 | 2020-10-30 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
CN111863802A (zh) * | 2019-04-24 | 2020-10-30 | 深圳第三代半导体研究院 | 一种垂直集成单元二极管芯片 |
FR3099966B1 (fr) | 2019-08-16 | 2021-09-24 | Commissariat Energie Atomique | Procédé de fabrication de dispositifs optoélectroniques |
WO2021075728A1 (en) | 2019-10-15 | 2021-04-22 | Samsung Electronics Co., Ltd. | Display module and manufacturing method thereof |
JP7091598B2 (ja) | 2020-05-20 | 2022-06-28 | 日亜化学工業株式会社 | 発光装置の製造方法 |
FR3111013B1 (fr) | 2020-05-29 | 2022-06-03 | Commissariat Energie Atomique | Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes |
FR3118306B1 (fr) | 2020-12-22 | 2023-05-05 | Commissariat Energie Atomique | Procédé de réalisation d’un dispositif optoélectronique comportant des LED à base de nitrure |
FR3119931B1 (fr) | 2021-02-17 | 2024-04-05 | Commissariat Energie Atomique | Dispositif optoélectronique et procédé de fabrication d'un tel dispositif |
US20230299228A1 (en) * | 2022-02-04 | 2023-09-21 | Meta Platforms Technologies, Llc | Common anode architecture facilitated by p-doping |
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FR3143197A1 (fr) | 2022-12-07 | 2024-06-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication d’un dispositif optoélectronique comprenant une LED et une photodiode |
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WO2011126248A2 (en) * | 2010-04-06 | 2011-10-13 | Seoul Opto Device Co., Ltd. | Light emitting diode and method of fabricating the same |
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DE102011056888A1 (de) * | 2011-12-22 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
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DE102012112530A1 (de) * | 2012-12-18 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
CN107768362B (zh) * | 2013-03-28 | 2020-09-08 | 东芝北斗电子株式会社 | 发光装置及其制造方法 |
FR3012669B1 (fr) * | 2013-10-29 | 2017-01-13 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif comprenant un circuit integre et des cellules photovoltaiques |
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EP3913680A1 (fr) | 2021-11-24 |
US20190131343A1 (en) | 2019-05-02 |
ES2896179T3 (es) | 2022-02-24 |
US10734439B2 (en) | 2020-08-04 |
TW201813121A (zh) | 2018-04-01 |
KR102574122B1 (ko) | 2023-09-01 |
WO2017194845A1 (fr) | 2017-11-16 |
TWI716595B (zh) | 2021-01-21 |
CN109564930B (zh) | 2023-08-15 |
EP3455882B1 (fr) | 2021-08-11 |
KR20190008527A (ko) | 2019-01-24 |
CN109564930A (zh) | 2019-04-02 |
JP2019522894A (ja) | 2019-08-15 |
EP3455882A1 (fr) | 2019-03-20 |
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