FR3117672B1 - Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant - Google Patents
Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant Download PDFInfo
- Publication number
- FR3117672B1 FR3117672B1 FR2012999A FR2012999A FR3117672B1 FR 3117672 B1 FR3117672 B1 FR 3117672B1 FR 2012999 A FR2012999 A FR 2012999A FR 2012999 A FR2012999 A FR 2012999A FR 3117672 B1 FR3117672 B1 FR 3117672B1
- Authority
- FR
- France
- Prior art keywords
- doped region
- integrated circuit
- dopant
- type
- avalanche diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001960 triggered effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005421 electrostatic potential Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Un circuit intégré comprend au moins une diode à effet d'avalanche déclenché par photon individuel « SPAD » (SPD) comportant une jonction PN, dans un caisson semiconducteur (P-) dopé avec un premier type de dopant, entre une première région dopée (PAN) avec le premier type de dopant et une deuxième région dopée (N+) avec le deuxième type de dopant opposé au premier type de dopant. La première région dopée (PAN) est façonnée de manière à incorporer des variations locales de la concentration des dopants, adaptées pour engendrer une variation monotone du potentiel électrostatique (Pot) entre la première région dopée (PAN) et le caisson semiconducteur (P-), lorsque la tension entre la deuxième région dopée (N+) et le caisson semiconducteur (P-) est supérieure ou égale au niveau de la tension de claquage (Vb) de la jonction PN. Figure de l’abrégé : figure 2A.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2012999A FR3117672B1 (fr) | 2020-12-10 | 2020-12-10 | Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant |
US17/546,503 US11949035B2 (en) | 2020-12-10 | 2021-12-09 | Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method |
US18/588,656 US20240194815A1 (en) | 2020-12-10 | 2024-02-27 | Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2012999 | 2020-12-10 | ||
FR2012999A FR3117672B1 (fr) | 2020-12-10 | 2020-12-10 | Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3117672A1 FR3117672A1 (fr) | 2022-06-17 |
FR3117672B1 true FR3117672B1 (fr) | 2023-12-08 |
Family
ID=74554046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2012999A Active FR3117672B1 (fr) | 2020-12-10 | 2020-12-10 | Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant |
Country Status (2)
Country | Link |
---|---|
US (2) | US11949035B2 (fr) |
FR (1) | FR3117672B1 (fr) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8093624B1 (en) * | 2006-02-15 | 2012-01-10 | Massachusetts Institute Of Technology | High fill-factor avalanche photodiode |
US8259293B2 (en) * | 2007-03-15 | 2012-09-04 | Johns Hopkins University | Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system |
DE102007037020B3 (de) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodiode |
US7898001B2 (en) * | 2008-12-03 | 2011-03-01 | Stmicroelectronics (Research & Development) Limited | Single photon detector and associated methods for making the same |
US20100159632A1 (en) * | 2008-12-23 | 2010-06-24 | Omnivision Technologies, Inc. | Technique for fabrication of backside illuminated image sensor |
JP6017916B2 (ja) * | 2012-10-16 | 2016-11-02 | 株式会社豊田中央研究所 | 光検出器 |
JP6090060B2 (ja) * | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
FR3041817B1 (fr) * | 2015-09-30 | 2017-10-13 | Commissariat Energie Atomique | Photodiode de type spad |
EP3477710B1 (fr) * | 2017-10-26 | 2023-03-29 | STMicroelectronics (Research & Development) Limited | Photodiode à avalanche et procédé de fabrication de photodiode à avalanche |
JP7242234B2 (ja) * | 2018-09-28 | 2023-03-20 | キヤノン株式会社 | 光検出装置、光検出システム |
FR3114441B1 (fr) * | 2020-09-24 | 2022-10-07 | Commissariat Energie Atomique | Photodiode de type spad |
FR3121282B1 (fr) * | 2021-03-25 | 2023-12-22 | St Microelectronics Crolles 2 Sas | Photodiode SPAD |
KR20230032568A (ko) * | 2021-08-31 | 2023-03-07 | 주식회사 디비하이텍 | Spad 구조 |
-
2020
- 2020-12-10 FR FR2012999A patent/FR3117672B1/fr active Active
-
2021
- 2021-12-09 US US17/546,503 patent/US11949035B2/en active Active
-
2024
- 2024-02-27 US US18/588,656 patent/US20240194815A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220190184A1 (en) | 2022-06-16 |
US20240194815A1 (en) | 2024-06-13 |
FR3117672A1 (fr) | 2022-06-17 |
US11949035B2 (en) | 2024-04-02 |
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