DE69430094D1 - Diamant-Halbleiteranordnung - Google Patents
Diamant-HalbleiteranordnungInfo
- Publication number
- DE69430094D1 DE69430094D1 DE69430094T DE69430094T DE69430094D1 DE 69430094 D1 DE69430094 D1 DE 69430094D1 DE 69430094 T DE69430094 T DE 69430094T DE 69430094 T DE69430094 T DE 69430094T DE 69430094 D1 DE69430094 D1 DE 69430094D1
- Authority
- DE
- Germany
- Prior art keywords
- type
- diamond layer
- high resistance
- region
- conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 9
- 239000010432 diamond Substances 0.000 title abstract 9
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002019 doping agent Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22623593A JP4071833B2 (ja) | 1993-09-10 | 1993-09-10 | ダイヤモンド半導体デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69430094D1 true DE69430094D1 (de) | 2002-04-18 |
DE69430094T2 DE69430094T2 (de) | 2002-11-21 |
Family
ID=16842016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69430094T Expired - Lifetime DE69430094T2 (de) | 1993-09-10 | 1994-09-06 | Diamant-Halbleiteranordnung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5600156A (de) |
EP (1) | EP0643423B1 (de) |
JP (1) | JP4071833B2 (de) |
AT (1) | ATE214520T1 (de) |
DE (1) | DE69430094T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4002955B2 (ja) * | 1999-06-21 | 2007-11-07 | 独立行政法人科学技術振興機構 | ダイヤモンド半導体デバイスの製造方法 |
JP3138705B1 (ja) * | 1999-08-31 | 2001-02-26 | 工業技術院長 | ダイヤモンドpn接合ダイオードおよびその作製方法 |
JP3411989B2 (ja) * | 2000-03-28 | 2003-06-03 | 独立行政法人産業技術総合研究所 | ダイヤモンド半導体発光素子 |
JP4153984B2 (ja) * | 2000-09-01 | 2008-09-24 | 株式会社神戸製鋼所 | トランジスタ |
US7402835B2 (en) * | 2002-07-18 | 2008-07-22 | Chevron U.S.A. Inc. | Heteroatom-containing diamondoid transistors |
US7224532B2 (en) * | 2002-12-06 | 2007-05-29 | Chevron U.S.A. Inc. | Optical uses diamondoid-containing materials |
JP3986432B2 (ja) * | 2002-12-20 | 2007-10-03 | 株式会社神戸製鋼所 | ダイヤモンド電子素子 |
US20050019955A1 (en) * | 2003-07-23 | 2005-01-27 | Dahl Jeremy E. | Luminescent heterodiamondoids as biological labels |
JP4911743B2 (ja) * | 2004-09-10 | 2012-04-04 | 独立行政法人物質・材料研究機構 | 電気化学素子及びその製造方法 |
CN100433371C (zh) * | 2007-01-26 | 2008-11-12 | 哈尔滨工业大学 | 以掺硼非晶金刚石薄膜为窗口层的a-Si:H太阳电池及制备方法 |
JP5036568B2 (ja) * | 2008-01-07 | 2012-09-26 | 株式会社神戸製鋼所 | 電子素子構造 |
JP5119553B2 (ja) * | 2008-07-24 | 2013-01-16 | 独立行政法人産業技術総合研究所 | ダイヤモンド半導体素子 |
US20130026492A1 (en) * | 2011-07-30 | 2013-01-31 | Akhan Technologies Inc. | Diamond Semiconductor System and Method |
US8933462B2 (en) * | 2011-12-21 | 2015-01-13 | Akhan Semiconductor, Inc. | Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method |
US20130175546A1 (en) * | 2012-01-06 | 2013-07-11 | Akhan Technologies, Inc. | Diamond Semiconductor System and Method |
JP6257459B2 (ja) * | 2014-06-23 | 2018-01-10 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6727928B2 (ja) * | 2016-05-30 | 2020-07-22 | 株式会社東芝 | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2730271B2 (ja) * | 1990-03-07 | 1998-03-25 | 住友電気工業株式会社 | 半導体装置 |
JP2961812B2 (ja) * | 1990-05-17 | 1999-10-12 | 住友電気工業株式会社 | 半導体装置 |
JPH04293272A (ja) * | 1991-03-22 | 1992-10-16 | Kobe Steel Ltd | ダイヤモンドpin型ダイオード |
-
1993
- 1993-09-10 JP JP22623593A patent/JP4071833B2/ja not_active Expired - Fee Related
-
1994
- 1994-09-06 DE DE69430094T patent/DE69430094T2/de not_active Expired - Lifetime
- 1994-09-06 AT AT94113945T patent/ATE214520T1/de not_active IP Right Cessation
- 1994-09-06 EP EP94113945A patent/EP0643423B1/de not_active Expired - Lifetime
- 1994-09-08 US US08/303,112 patent/US5600156A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69430094T2 (de) | 2002-11-21 |
JPH0786620A (ja) | 1995-03-31 |
EP0643423A3 (de) | 1995-08-09 |
US5600156A (en) | 1997-02-04 |
ATE214520T1 (de) | 2002-03-15 |
EP0643423A2 (de) | 1995-03-15 |
EP0643423B1 (de) | 2002-03-13 |
JP4071833B2 (ja) | 2008-04-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033 |