JP6727928B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6727928B2 JP6727928B2 JP2016107939A JP2016107939A JP6727928B2 JP 6727928 B2 JP6727928 B2 JP 6727928B2 JP 2016107939 A JP2016107939 A JP 2016107939A JP 2016107939 A JP2016107939 A JP 2016107939A JP 6727928 B2 JP6727928 B2 JP 6727928B2
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- 239000004065 semiconductor Substances 0.000 title claims description 256
- 229910003460 diamond Inorganic materials 0.000 claims description 113
- 239000010432 diamond Substances 0.000 claims description 113
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 55
- 229910052757 nitrogen Inorganic materials 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 30
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 39
- 230000015556 catabolic process Effects 0.000 description 26
- 238000000034 method Methods 0.000 description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 24
- 229910052698 phosphorus Inorganic materials 0.000 description 18
- 239000010931 gold Substances 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000002040 relaxant effect Effects 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- -1 SiN Chemical compound 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
本実施形態の半導体装置は、第1の側面を有するi型又は第1導電型の第1のダイヤモンド半導体層と、第1のダイヤモンド半導体層上に配置され第2の側面を有する第2導電型の第2のダイヤモンド半導体層と、第1の側面及び第2の側面に接し窒素を含む第3のダイヤモンド半導体層と、第1のダイヤモンド半導体層に電気的に接続された第1の電極と、第2のダイヤモンド半導体層に電気的に接続された第2の電極と、を備える。
本実施形態の半導体装置200は、第2のダイヤモンド半導体層12上に配置された第1導電型の第4のダイヤモンド半導体層18と、第4のダイヤモンド半導体層18に電気的に接続された第3の電極46と、をさらに備える点で、第1の実施形態の半導体装置100と異なっている。ここで、第1の実施形態と重複する点については、記載を省略する。
本実施形態の半導体装置300は、第1導電型の第1のダイヤモンド半導体層10と、第1のダイヤモンド半導体層10に接し窒素を含む第2のダイヤモンド半導体層12と、第1のダイヤモンド半導体層10に電気的に接続された第1の電極40と、第1のダイヤモンド半導体層10及び第2のダイヤモンド半導体層12に接する第2の電極42と、を備える。
10a 第1のダイヤモンド半導体層の側面
10b 第1のダイヤモンド半導体層の上面
12 第2のダイヤモンド半導体層
12a 第2のダイヤモンド半導体層の側面
14 第3のダイヤモンド半導体層
16 半導体層
18 第4のダイヤモンド半導体層
20 第5のダイヤモンド半導体層
20a 第5のダイヤモンド半導体層の側面
20b 第5のダイヤモンド半導体層の上面
30 絶縁層
40 第1の電極
42 第2の電極
44 第1のフィールドプレート領域
46 第3の電極
48 第2のフィールドプレート領域
50 メサ構造
50a メサ構造の側面
50b メサ構造の上面
100 半導体装置
200 半導体装置
300 半導体装置
Claims (5)
- 第1の側面を有するi型又は第1導電型の第1のダイヤモンド半導体層と、
前記第1のダイヤモンド半導体層上に配置され第2の側面及び上面を有する第2導電型の第2のダイヤモンド半導体層と、
前記第1の側面、前記第2の側面及び前記上面に接し窒素を含む第3のダイヤモンド半導体層と、
前記第3のダイヤモンド半導体層に接する絶縁層と、
前記第1のダイヤモンド半導体層に電気的に接続された第1の電極と、
前記第2のダイヤモンド半導体層に電気的に接続され、前記絶縁層上に配置された領域を有する第2の電極と、
を備える半導体装置。 - 前記絶縁層は酸化シリコン、酸化アルミニウム、窒化アルミニウム又は窒化シリコンを含む請求項1記載の半導体装置。
- 前記第1のダイヤモンド半導体層及び前記第2のダイヤモンド半導体層の形状はメサ構造である請求項1又は請求項2記載の半導体装置。
- 前記第1のダイヤモンド半導体層の第1導電型不純物濃度より高い第1導電型不純物濃度を有する第1導電型の半導体層を、さらに備え、
前記第1のダイヤモンド半導体層は前記第1導電型の半導体層と前記第2のダイヤモンド半導体層の間に配置される請求項1乃至請求項3いずれか一項記載の半導体装置。 - 前記第2のダイヤモンド半導体層上に配置された第1導電型の第4のダイヤモンド半導体層と、
前記第4のダイヤモンド半導体層に電気的に接続された第3の電極と、
をさらに備える請求項1乃至請求項4いずれか一項記載の半導体装置。
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