CN109004018A - 肖特基二极管及制备方法 - Google Patents
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Abstract
本发明一种肖特基二极管,包含:一重掺杂的N型SiC衬底;一轻掺杂的N型SiC层,其生长在重掺杂的N型SiC衬底上;一非掺杂的SiC层,其生长在轻掺杂的N型SiC层上;一石墨烯层,其是在非掺杂的SiC层上高温热解生成的;一欧姆接触电极,其制作在重掺杂的N型SiC衬底的背面,形成阴极电极;一肖特基接触电极,其制作在石墨烯层上,形成阳极电极。本发明可以降低肖特基二极管正向开启电压,减小反向漏电流。
Description
技术领域
本发明涉及半导体材料与器件技术领域,尤其涉及碳化硅肖特基二极管及制备方法。
背景技术
肖特基二极管是一种利用热电子发射的二极管,结构和工艺相对比较简单,并且由于反向恢复时间极短,正向导通压降相对较低,因此在高频、低压、大电流等领域广泛应用。目前Si和GaAs等传统的肖特基二极管,由于材料特性的限制,难以满足对击穿电压和电流等器件性能的更高要求,SiC作为第三代半导体材料禁带宽度大,电子饱和速度高、临界击穿电场高、热导性能好、高温等特性,非常适合制造高频大功率肖特基二极管,目前性能优良的SiC肖特基二极管已经商业化应用。
但SiC肖特基二极管在性能上还存在较多问题,由于肖特基电极与半导体SiC的接触电阻较大,导致其导通电压比较高,同时由于受到n型碳化硅表面态的影响,肖特基接触势垒降低,增大了碳化硅肖特基二极管的反向漏电流。另外SiC基的肖特基二极管的反向击穿电压还有较大提高空间。
发明内容
本发明解决的技术问题是克服现有技术的不足,提供一种肖特基二极管及制备方法,可以降低肖特基二极管正向开启电压,减小反向漏电流。
本发明提供一种肖特基二极管,包含:
一重掺杂的N型SiC衬底;
一轻掺杂的N型SiC层,其生长在重掺杂的N型SiC衬底上;
一非掺杂的SiC层,其生长在轻掺杂的N型SiC层上;
一石墨烯层,其是在非掺杂的SiC层上高温热解生成的;
一欧姆接触电极,其制作在重掺杂的N型SiC衬底的背面,形成阴极电极;
一肖特基接触电极,其制作在石墨烯层上,形成阳极电极。
本发明还提供一种肖特基二极管的制备方法,包括如下步骤:
步骤1:在重掺杂的N型SiC衬底上外延轻掺杂的N型SiC层;
步骤2:在轻掺杂的N型SiC层上外延非掺杂的SiC层;
步骤3:将非掺杂的SiC层进行表面处理,在非掺杂的SiC层的表面进行高温热解生成石墨烯层;
步骤4:在重掺杂的N型SiC衬底的背面沉积Ti、Ni或Pt金属,制作欧姆接触电极,形成阴极电极;
步骤5:在热解生成的石墨烯层上沉积Ti、Ni或Al金属,制作肖特基接触电极,形成阳极电极。
本发明的上述技术方案具有如下优点和有益效果:在碳化硅半导体和肖特基金属之间加入一层石墨烯,有利于减小肖特基电极的接触电阻,减小了肖特基二极管的正向开启电压,使得在正向电压下,可以通过更大的电流。石墨烯插入层采用外延生长的非掺杂SiC经过高温热解原位生成石墨烯,避免了石墨烯的中间转移过程,不存在中间转移过程对石墨烯性能的损坏。原位生成的石墨烯有效降低碳化硅表面态,并对表面费米能级具有钉扎效应,提高肖特基二极管的势垒高度,减小反向漏电流,提高反向击穿电压。
附图说明
为使本发明的目的、技术方案和优点更加清楚明白,下面结合实施例及附图详细说明如后,其中:
图1示出了本发明提供的一种SiC肖特基二极管的剖视图;
图2示出根据本公开的实施例的制备方法的制作工艺流程图。
具体实施例
请参阅图1、图2所示,本发明提供一种肖特基二极管和制备方法,所述的肖特基二极管包含:
一重掺杂的N型SiC衬底10;其中所述重掺杂的N型SiC衬底10的净掺杂浓度大于1×1018cm3,其晶型为4H或者6H型单晶SiC。
一轻掺杂的N型SiC层20,其生长在重掺杂的N型SiC衬底10上;所述轻掺杂的N型SiC层20的净掺杂浓度为1×1015cm3至1×1017cm3,外延层厚度为1-20μm。该轻掺杂的N型SiC层20外延生长时延续了衬底的晶型结构。
一非掺杂的SiC层30,其生长在轻掺杂的N型SiC层20上;该非掺杂的SiC层30是用来制备石墨烯的,所以要求晶型为六方相单晶SiC,并且需要很高单晶晶体质量和表面平整度,厚度为2个碳-硅双原子层到30nm。
一石墨烯层301,其是在非掺杂的SiC层30上高温热解生成的;
一欧姆接触电极40,其制作在重掺杂的N型SiC衬底10的背面,形成阴极电极;
一肖特基接触电极5(),其制作在石墨烯层301上,形成阳极电极。
请再参阅图2及图1所示,本发明还提供的肖特基二极管制备方法包含以下步骤:
步骤1:在重掺杂的N型SiC衬底10上外延轻掺杂的N型SiC层20;其中所述重掺杂的N型SiC衬底10的净掺杂浓度大于1×1018cm3;所述轻掺杂的N型SiC层20的净掺杂浓度为1×1015cm3至1×1017cm3。
步骤2:在轻掺杂的N型SiC层20上外延非掺杂的SiC层30,厚度为2个碳-硅双原子层到30nm;
步骤3:将非掺杂的SiC层30进行表面处理,通过化学清洗、高温氢刻蚀以及去氧化等工艺,去除表面污染物和表面划痕,形成光滑平整的原子台阶。然后在真空或惰性气氛的低压下,对非掺杂的SiC层30的表面进行高温热解,蒸发掉Si原子,形成石墨烯层301,优选的生成的石墨烯层301不超过两层。
步骤4:在重掺杂的N型SiC衬底10的背面,采用电子束蒸发沉积Ti、Ni或Pt金属,然后在800℃-1100℃温度范围内,在真空或惰性气体氛围中进行快速退火,制作欧姆接触电极40,形成阴极电极;
步骤5:在热解生成的石墨烯层301上,采用电子束蒸发沉积Ti、Ni、Al或Mo金属,制作肖特基接触电极50,形成阳极电极。
其中所述的在重掺杂的N型SiC衬底10上外延轻掺杂的N型SiC层20,以及轻掺杂的N型SiC层20外延非掺杂的SiC层30,均是采用CVD法外延。
以下结合具体实施例,并参照附图,对本发明进一步详细说明。
实施例一:
采用图2工艺流程制作出图1结构的SiC肖特基二极管:
(1)选取重掺杂的N型SiC衬底10,其净掺杂浓度为8×1018cm3,其晶型为6H型单晶SiC。通过CVD方法,在所述重掺杂的N型SiC衬底10上外延生长轻掺杂的SiC层20,该轻掺杂的N型SiC层20的净掺杂浓度为1×1016cm3,厚度为10μm。
(2)在所述轻掺杂的N型SiC层20上,继续CVD外延生长非掺杂的SiC层30,该非掺杂的SiC层30外延延续了衬底的六方结构,并且具有很高的单晶晶体质量和表面平整度,厚度为5nm。
(3)对所述的非掺杂的SiC层30进行高温热解制备石墨烯。在高温热解前,首先将外延层进行表面预处理,通过化学清洗、高温氢刻蚀以及去氧化等工艺,去除表面污染物和表面划痕,形成光滑平整的原子台阶。在真空下高温热解蒸发掉Si原子,形成单层的石墨烯层301。
(4)在所述的重掺杂的N型SiC衬底10的背面沉积欧姆接触电极40,采用电子束蒸发沉积Ni金属200nm,然后在900℃惰性气体N2保护下进行快速退火,形成欧姆接触电极40,作为该肖特基二极管的阴极电极。
(5)利用电子束蒸发,在所述的石墨烯层301上沉积Al金属200nm,制作肖特基接触电极50,作为该肖特基二极管的阳极电极。
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种肖特基二极管,包含:
一重掺杂的N型SiC衬底;
一轻掺杂的N型SiC层,其生长在重掺杂的N型SiC衬底上;
一非掺杂的SiC层,其生长在轻掺杂的N型SiC层上;
一石墨烯层,其是在非掺杂的SiC层上高温热解生成的;
一欧姆接触电极,其制作在重掺杂的N型SiC衬底的背面,形成阴极电极;
一肖特基接触电极,其制作在石墨烯层上,形成阳极电极。
2.根据权利要求1所述的肖特基二极管,其中所述非掺杂的SiC层的晶型为六方相单晶SiC。
3.根据权利要求1所述的肖特基二极管,其中所述重掺杂的N型SiC衬底的净掺杂浓度大于1×1018cm-3。
4.根据权利要求1所述的肖特基二极管,其中所述轻掺杂的N型SiC层的净掺杂浓度为1×1015cm-3至1×1017cm-3。
5.一种肖特基二极管的制备方法,包括如下步骤:
步骤1:在重掺杂的N型SiC衬底上外延轻掺杂的N型SiC层;
步骤2:在轻掺杂的N型SiC层上外延非掺杂的SiC层;
步骤3:将非掺杂的SiC层进行表面处理,在非掺杂的SiC层的表面进行高温热解生成石墨烯层;
步骤4:在重掺杂的N型SiC衬底的背面沉积Ti、Ni或Pt金属,制作欧姆接触电极,形成阴极电极;
步骤5:在热解生成的石墨烯层上沉积Ti、Ni或Al金属,制作肖特基接触电极,形成阳极电极。
6.根据权利要求5所述的肖特基二极管的制备方法,其中所述重掺杂的N型SiC衬底的净掺杂浓度大于1×1018cm-3;所述轻掺杂的N型SiC层的净掺杂浓度为1×1015cm-3至1×1017cm-3。
7.根据权利要求5所述的肖特基二极管的制备方法,其中在重掺杂的N型SiC衬底上外延轻掺杂的N型SiC层,以及在轻掺杂的N型SiC层上外延非掺杂的SiC层,均是采用化学气相沉积即CVD法外延。
8.根据权利要求5所述的肖特基二极管的制备方法,其中非掺杂的SiC层表面处理后达到原子级平整度,高温热解是在高温真空或惰性气体氛围中Si原子蒸发形成石墨烯。
9.根据权利要求5所述的肖特基二极管的制备方法,其中在所述重掺杂的N型SiC衬底上采用电子束蒸发沉积Ti、Ni或Pt金属,然后在800℃-1100℃温度范围内,在真空或惰性气体氛围中进行快速退火,形成欧姆接触电极。
10.根据权利要求5所述的肖特基二极管的制备方法,其中在所述石墨烯层上采用电子束蒸发沉积Ti、Ni、Al或Mo金属,形成肖特基接触电极。
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