CN104810282A - 一种采用n型碳化硅衬底制作n沟道igbt器件的方法 - Google Patents
一种采用n型碳化硅衬底制作n沟道igbt器件的方法 Download PDFInfo
- Publication number
- CN104810282A CN104810282A CN201410037060.0A CN201410037060A CN104810282A CN 104810282 A CN104810282 A CN 104810282A CN 201410037060 A CN201410037060 A CN 201410037060A CN 104810282 A CN104810282 A CN 104810282A
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- China
- Prior art keywords
- silicon carbide
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- metal
- photoresist
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 134
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 47
- 238000005468 ion implantation Methods 0.000 claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 230000000717 retained effect Effects 0.000 claims abstract description 8
- 238000005498 polishing Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 238000009616 inductively coupled plasma Methods 0.000 claims description 29
- 238000001020 plasma etching Methods 0.000 claims description 29
- 238000001259 photo etching Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201410037060.0A CN104810282B (zh) | 2014-01-26 | 2014-01-26 | 一种采用n型碳化硅衬底制作n沟道igbt器件的方法 |
Applications Claiming Priority (1)
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CN201410037060.0A CN104810282B (zh) | 2014-01-26 | 2014-01-26 | 一种采用n型碳化硅衬底制作n沟道igbt器件的方法 |
Publications (2)
Publication Number | Publication Date |
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CN104810282A true CN104810282A (zh) | 2015-07-29 |
CN104810282B CN104810282B (zh) | 2019-05-14 |
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CN201410037060.0A Active CN104810282B (zh) | 2014-01-26 | 2014-01-26 | 一种采用n型碳化硅衬底制作n沟道igbt器件的方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374860A (zh) * | 2015-12-08 | 2016-03-02 | 北京华进创威电子有限公司 | 一种氮化镓基绝缘栅双极晶体管制备方法及其产品 |
WO2018000223A1 (zh) * | 2016-06-29 | 2018-01-04 | 黄嘉杰 | 一种绝缘栅双极型晶体管结构及其制造方法 |
CN108538721A (zh) * | 2018-03-30 | 2018-09-14 | 苏州凤凰芯电子科技有限公司 | 一种igbt器件背面制作方法 |
CN111005068A (zh) * | 2019-12-09 | 2020-04-14 | 中国电子科技集团公司第五十五研究所 | 一种生长高表面质量超厚igbt结构碳化硅外延材料的方法 |
CN111508837A (zh) * | 2020-04-23 | 2020-08-07 | 中国科学院微电子研究所 | N沟道SiC IGBT器件的制作方法 |
KR20200116426A (ko) * | 2019-04-01 | 2020-10-12 | 실리코닉스 인코포레이티드 | 반도체 장치 제조를 위한 가상 웨이퍼 기술 |
CN112466936A (zh) * | 2020-12-21 | 2021-03-09 | 厦门芯一代集成电路有限公司 | 一种高压igbt器件及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060194400A1 (en) * | 2005-01-21 | 2006-08-31 | Cooper James A | Method for fabricating a semiconductor device |
US20080296771A1 (en) * | 2007-05-31 | 2008-12-04 | Cree, Inc. | Methods of fabricating silicon carbide power devices by at least partially removing an n-type silicon carbide substrate, and silicon carbide power devices so fabricated |
-
2014
- 2014-01-26 CN CN201410037060.0A patent/CN104810282B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060194400A1 (en) * | 2005-01-21 | 2006-08-31 | Cooper James A | Method for fabricating a semiconductor device |
US20080296771A1 (en) * | 2007-05-31 | 2008-12-04 | Cree, Inc. | Methods of fabricating silicon carbide power devices by at least partially removing an n-type silicon carbide substrate, and silicon carbide power devices so fabricated |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374860A (zh) * | 2015-12-08 | 2016-03-02 | 北京华进创威电子有限公司 | 一种氮化镓基绝缘栅双极晶体管制备方法及其产品 |
WO2018000223A1 (zh) * | 2016-06-29 | 2018-01-04 | 黄嘉杰 | 一种绝缘栅双极型晶体管结构及其制造方法 |
US10692995B2 (en) | 2016-06-29 | 2020-06-23 | Ka Kit WONG | Insulated-gate bipolar transistor structure and method for manufacturing the same |
CN108538721A (zh) * | 2018-03-30 | 2018-09-14 | 苏州凤凰芯电子科技有限公司 | 一种igbt器件背面制作方法 |
KR20200116426A (ko) * | 2019-04-01 | 2020-10-12 | 실리코닉스 인코포레이티드 | 반도체 장치 제조를 위한 가상 웨이퍼 기술 |
CN111799174A (zh) * | 2019-04-01 | 2020-10-20 | 硅尼克斯股份有限公司 | 用于制造半导体器件的虚拟晶圆技术 |
EP3730676A3 (en) * | 2019-04-01 | 2021-01-27 | Siliconix Incorporated | Virtual wafer techniques for fabricating semiconductor devices |
US11295949B2 (en) | 2019-04-01 | 2022-04-05 | Vishay SIliconix, LLC | Virtual wafer techniques for fabricating semiconductor devices |
KR102435904B1 (ko) | 2019-04-01 | 2022-08-25 | 실리코닉스 인코포레이티드 | 반도체 장치 제조를 위한 가상 웨이퍼 기술 |
CN111005068A (zh) * | 2019-12-09 | 2020-04-14 | 中国电子科技集团公司第五十五研究所 | 一种生长高表面质量超厚igbt结构碳化硅外延材料的方法 |
CN111508837A (zh) * | 2020-04-23 | 2020-08-07 | 中国科学院微电子研究所 | N沟道SiC IGBT器件的制作方法 |
CN112466936A (zh) * | 2020-12-21 | 2021-03-09 | 厦门芯一代集成电路有限公司 | 一种高压igbt器件及其制备方法 |
Also Published As
Publication number | Publication date |
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CN104810282B (zh) | 2019-05-14 |
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Inventor after: Li Ling Inventor after: Yang Fei Inventor after: Qiu Yufeng Inventor before: Yang Fei Inventor before: Li Ling |
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Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Patentee after: STATE GRID CORPORATION OF CHINA Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: GLOBAL ENERGY INTERCONNECTION Research Institute Patentee before: STATE GRID CORPORATION OF CHINA Address after: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Patentee after: STATE GRID CORPORATION OF CHINA Address before: 100031 Xicheng District West Chang'an Avenue, No. 86, Beijing Co-patentee before: STATE GRID SMART GRID Research Institute Patentee before: State Grid Corporation of China |