KR950034753A - 유도성 부하소자용 집적 드라이버 회로 - Google Patents
유도성 부하소자용 집적 드라이버 회로 Download PDFInfo
- Publication number
- KR950034753A KR950034753A KR1019950007930A KR19950007930A KR950034753A KR 950034753 A KR950034753 A KR 950034753A KR 1019950007930 A KR1019950007930 A KR 1019950007930A KR 19950007930 A KR19950007930 A KR 19950007930A KR 950034753 A KR950034753 A KR 950034753A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- inductive load
- integrated driver
- driver circuit
- doped
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title claims abstract 9
- 239000000758 substrate Substances 0.000 claims abstract 13
- 230000000694 effects Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000007257 malfunction Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
집적회로에 의해 구동되는 유도성부하(L)의 정류시, 마이노리티 캐리어 주입에 의해 기판(1)에 생기는 전류의 횡측성분으로 인한 오동작을 방지하기 위해, 하이도핑된 p 기판 또는 n기판상에 p 도전형 에피택셜층(2)이 제공되고 상기 층내에 n 도핑웰(3-5)이 배치된다. 전술한 효과는 하이도핑된 p 기판에서 캐리어 수명이 현저히 줄어들고 n 기판내에서 마이노리티 캐리어가 머조리티 캐리어이기 때문에 불리하지 않게 된다. 회로기술의 변형은, 유도성 부하(L)에 대한 출력단자(C)로부터 다이오드(D1)가 기준전위에 대향해서 접속되고 기판이 2개의 역으로 병렬접속된 다이오드(D2,D3)를 통해 기준전위에 접속된다는 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 특징으로 갖는 웨이퍼의 횡단면도, 제2a도는 회로의 설명을 위한 웨이퍼의 횡단면도, 제2b도는 제2a도에 대한 회로도, 제3도는 본 발명의 문제점을 설명하기 위한 공지의 회로도.
Claims (5)
- 기판, 다수의 절연된 웰, 및 부하조사에 접속하기 위한 출력단자를 갖춘 유도성 부하소자용 집적드라이버 회로에 있어서, 하이도핑된 p 도전형 기판(1), 상기 기판(1) 위에 제공되며 그 안에 웰이 배치되어 있는 동일한 도전형의 에피택셜층(2), 및 출력단자에 배치된 웰(3)을 측면으로 둘러싸는 n 도핑구역(5)을 포함하는 것을 특징으로 하는 유도성 부하소자용 집적 드라이버 회로.
- 제1항에 있어서, 기판의 억셉터 도핑이 에피택셜층의 억셉터 도핑보다 적어도 2차수만큼 더 큰 것을 특징으로 하는 유도성 부하소자용 집적 드라이버 회로.
- 제1항 또는 2항에 있어서, 유도성 부하소자(L)의 정류시 기판(1)가 에피택셜층(2)의 접합영역에서 전기드리프트 필드가 생기는 것을 특징으로 하는 유도성 부하소자용 집적 드라이버 회로.
- 기판, 다수의 절연된 웰, 및 부하소자에 접속하기 위한 출력단자를 갖춘 유도성 부하소자용 집적 드라이버 회로에 있어서, 에미터로서 n 도핑 웰(3), 콜렉터로서 상기 웰(3)을 측면으로 둘러싸는 n 도핑구역(5), 및 베이스로서 하이도핑된 기판(1) 및 그 위에 제공된 에피택셜층(2)을 갖춘 npn 트랜지스터를 포함하는 것을 특징으로 하는 유도성 부하소자용 집적 드라이버 회로.
- 유도성 부하소자를 구동시키는데 대한 제1항 내지 4항 중 어느 한 항의 특징을 갖는 집적 드라이버 회로의 용도.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4411869.4 | 1994-04-06 | ||
DE4411869A DE4411869C2 (de) | 1994-04-06 | 1994-04-06 | Schaltungsanordnung mit einer integrierten Treiberschaltungsanordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950034753A true KR950034753A (ko) | 1995-12-28 |
KR100334381B1 KR100334381B1 (ko) | 2002-10-31 |
Family
ID=6514755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950007930A KR100334381B1 (ko) | 1994-04-06 | 1995-04-06 | 유도성부하소자용집적드라이버회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5719431A (ko) |
EP (1) | EP0676808B1 (ko) |
JP (1) | JPH07297373A (ko) |
KR (1) | KR100334381B1 (ko) |
DE (2) | DE4411869C2 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19518524C2 (de) * | 1995-05-19 | 1997-03-20 | Siemens Ag | Schaltungsanordnung zur Verringerung einer Minoritätsträgerinjektion in ein Substrat |
US5610079A (en) * | 1995-06-19 | 1997-03-11 | Reliance Electric Industrial Company | Self-biased moat for parasitic current suppression in integrated circuits |
DE19805786A1 (de) | 1998-02-12 | 1999-08-26 | Siemens Ag | Halbleiterbauelement mit Struktur zur Vermeidung von Querströmen |
DE19840031C2 (de) * | 1998-09-02 | 2002-09-19 | Infineon Technologies Ag | Halbleiteranordnung |
DE10006519B4 (de) * | 2000-02-15 | 2004-03-11 | Infineon Technologies Ag | MOSFET-Treibertransistor und Verfahren zum Herstellen desselben |
DE10014659C2 (de) * | 2000-03-24 | 2002-08-01 | Infineon Technologies Ag | Halbleiterschaltungsanordnung und entsprechende Herstellungsverfahren |
DE10202479A1 (de) * | 2002-01-23 | 2003-08-07 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit einer Struktur zur Verringerung eines Minoritätsladungsträgerstromes |
DE10350162B4 (de) * | 2003-10-28 | 2011-07-28 | Infineon Technologies AG, 81669 | Halbleiterbauteil |
DE102004032912B4 (de) * | 2004-07-07 | 2012-02-16 | Infineon Technologies Ag | Halbleiterbauelementanordnung mit einer Schutzanordnung zur Reduzierung einer Minoritätsladungsträger-Injektion |
CN100459145C (zh) * | 2006-12-15 | 2009-02-04 | 东南大学 | 高压功率集成电路隔离结构 |
US8992306B2 (en) * | 2007-07-30 | 2015-03-31 | Igt | Gaming system and method providing variable payback percentages |
DE102008004682A1 (de) | 2008-01-16 | 2009-09-10 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit einer Schutzstruktur zur Reduktion eines Minoritätsladungsträgerstromes |
US7943960B2 (en) * | 2008-02-01 | 2011-05-17 | Infineon Technologies Ag | Integrated circuit arrangement including a protective structure |
US7977768B2 (en) * | 2008-04-01 | 2011-07-12 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
US8814661B2 (en) | 2011-12-20 | 2014-08-26 | Igt | Gaming machines having normal and hot modes |
US9524614B2 (en) | 2012-09-25 | 2016-12-20 | Igt | Gaming system and method for permanently increasing the average expected payback percentage of a game for a player |
Family Cites Families (16)
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US4044373A (en) * | 1967-11-13 | 1977-08-23 | Hitachi, Ltd. | IGFET with gate protection diode and antiparasitic isolation means |
DE2508553C3 (de) * | 1975-02-27 | 1981-06-25 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Halbleiterschaltungsanordnung |
DE2560247C2 (de) * | 1975-02-27 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Halbleiterschaltungsanordnung |
DE3018848A1 (de) * | 1980-05-16 | 1981-11-26 | SIEMENS AG AAAAA, 1000 Berlin und 8000 München | Verfahren zur herstellung monolithisch intetgrierter mos- und bipolar-halbleiteranordnungen fuer den vhf- und den uhf-bereich |
US4496849A (en) * | 1982-02-22 | 1985-01-29 | General Motors Corporation | Power transistor protection from substrate injection |
JPS59152660A (ja) * | 1983-02-21 | 1984-08-31 | Nec Corp | 半導体装置 |
IT1215402B (it) * | 1987-03-31 | 1990-02-08 | Sgs Microelettronica Spa | Circuito integrato di pilotaggio di carichi induttivi riferiti a terra. |
DE68911321T2 (de) * | 1988-01-21 | 1994-07-07 | Exar Corp | Verfahren zum Herstellen eines komplementären BICMOS-Transistors mit isoliertem vertikalem PNP-Transistor. |
DD273722A1 (de) * | 1988-07-05 | 1989-11-22 | Zentr Wissenschaft & Tech Veb | Anordnung zur reduzierung des latchup-effektes bei integrierten cmos-schaltungen |
EP0382865A1 (de) * | 1989-02-14 | 1990-08-22 | Siemens Aktiengesellschaft | Anordnung zur Verminderung von Latch-up-Störanfälligkeit bei CMOS-Halbleiterschaltungen |
US5455447A (en) * | 1989-05-10 | 1995-10-03 | Texas Instruments Incorporated | Vertical PNP transistor in merged bipolar/CMOS technology |
JPH03138974A (ja) * | 1989-10-24 | 1991-06-13 | Toshiba Corp | Bi―CMOS集積回路 |
US5171699A (en) * | 1990-10-03 | 1992-12-15 | Texas Instruments Incorporated | Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication |
DE69128936T2 (de) * | 1991-11-25 | 1998-07-16 | St Microelectronics Srl | Hochstrom-MOS-Transistor enthaltende integrierte Brückenstruktur mit optimierten Übertragungsleistungsverlusten |
WO1993018552A1 (en) * | 1992-03-10 | 1993-09-16 | Analog Devices, Inc. | Circuit construction for controlling saturation of a transistor |
US5514901A (en) * | 1994-05-17 | 1996-05-07 | Allegro Microsystems, Inc. | Epitaxial island with adjacent asymmetrical structure to reduce collection of injected current from the island into other islands |
-
1994
- 1994-04-06 DE DE4411869A patent/DE4411869C2/de not_active Expired - Fee Related
-
1995
- 1995-03-31 JP JP7099622A patent/JPH07297373A/ja active Pending
- 1995-04-04 DE DE59501583T patent/DE59501583D1/de not_active Expired - Lifetime
- 1995-04-04 EP EP95105049A patent/EP0676808B1/de not_active Expired - Lifetime
- 1995-04-06 US US08/417,825 patent/US5719431A/en not_active Expired - Lifetime
- 1995-04-06 KR KR1019950007930A patent/KR100334381B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE4411869A1 (de) | 1995-10-12 |
DE59501583D1 (de) | 1998-04-16 |
US5719431A (en) | 1998-02-17 |
JPH07297373A (ja) | 1995-11-10 |
EP0676808B1 (de) | 1998-03-11 |
EP0676808A1 (de) | 1995-10-11 |
DE4411869C2 (de) | 1997-05-15 |
KR100334381B1 (ko) | 2002-10-31 |
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