ATE226760T1 - Schottkybarriere gleichrichter - Google Patents

Schottkybarriere gleichrichter

Info

Publication number
ATE226760T1
ATE226760T1 AT97923610T AT97923610T ATE226760T1 AT E226760 T1 ATE226760 T1 AT E226760T1 AT 97923610 T AT97923610 T AT 97923610T AT 97923610 T AT97923610 T AT 97923610T AT E226760 T1 ATE226760 T1 AT E226760T1
Authority
AT
Austria
Prior art keywords
drift region
concentration
region
doped
nonuniformly
Prior art date
Application number
AT97923610T
Other languages
English (en)
Inventor
Bantval Jayant Baliga
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Application granted granted Critical
Publication of ATE226760T1 publication Critical patent/ATE226760T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Percussion Or Vibration Massage (AREA)
  • Photovoltaic Devices (AREA)
AT97923610T 1996-05-13 1997-05-09 Schottkybarriere gleichrichter ATE226760T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/645,231 US5612567A (en) 1996-05-13 1996-05-13 Schottky barrier rectifiers and methods of forming same
PCT/US1997/007866 WO1997043789A1 (en) 1996-05-13 1997-05-09 Schottky barrier rectifiers and methods of forming same

Publications (1)

Publication Number Publication Date
ATE226760T1 true ATE226760T1 (de) 2002-11-15

Family

ID=24588179

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97923610T ATE226760T1 (de) 1996-05-13 1997-05-09 Schottkybarriere gleichrichter

Country Status (8)

Country Link
US (1) US5612567A (de)
EP (1) EP0902981B1 (de)
JP (1) JP4104170B2 (de)
KR (1) KR100430834B1 (de)
AT (1) ATE226760T1 (de)
AU (1) AU2937497A (de)
DE (1) DE69716597T2 (de)
WO (1) WO1997043789A1 (de)

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CN106784023B (zh) * 2016-12-27 2019-09-20 杭州易正科技有限公司 一种结势垒肖特基二极管
CN109390233A (zh) * 2017-08-08 2019-02-26 天津环鑫科技发展有限公司 一种沟槽式肖特基的制造方法
CN107910380A (zh) * 2017-12-07 2018-04-13 中芯集成电路（宁波）有限公司 肖特基二极管及其形成方法、半导体器件
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JP6884235B2 (ja) * 2018-02-09 2021-06-09 三菱電機株式会社 電力用半導体装置
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US10615292B2 (en) * 2018-03-27 2020-04-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. High voltage silicon carbide Schottky diode flip chip array
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WO2020013242A1 (ja) * 2018-07-12 2020-01-16 株式会社Flosfia 半導体装置
CN111081754A (zh) * 2018-10-19 2020-04-28 宁波比亚迪半导体有限公司 沟槽型mos结构肖特基二极管及其制备方法
US11749758B1 (en) 2019-11-05 2023-09-05 Semiq Incorporated Silicon carbide junction barrier schottky diode with wave-shaped regions
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode
CN111627821B (zh) * 2020-06-05 2023-09-12 温州大学 多层二碲化钼场效应晶体管的电子-空穴可逆掺杂方法
CN113066856A (zh) * 2021-04-27 2021-07-02 厦门吉顺芯微电子有限公司 具有双层外延结构的Trench MOS肖特基整流器件及制造方法
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Also Published As

Publication number Publication date
EP0902981A1 (de) 1999-03-24
US5612567A (en) 1997-03-18
JP4104170B2 (ja) 2008-06-18
DE69716597D1 (de) 2002-11-28
JP2000512075A (ja) 2000-09-12
AU2937497A (en) 1997-12-05
WO1997043789A1 (en) 1997-11-20
KR20000010929A (ko) 2000-02-25
DE69716597T2 (de) 2003-06-26
KR100430834B1 (ko) 2004-08-30
EP0902981B1 (de) 2002-10-23

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