M403749 五、新型說明： 【新型所屬之技術領域】 本創作係關於一種蕭特基二極體結構，尤指一種於溝槽中結合至少一 層半導體高濃度摻雜層，以形成超級接面效應，具備順向導通電阻低及逆 向漏電流低之蕭特基二極體。 w 【先前技術】 習知蕭特基二極體為一種導通電壓降較低、允許高速切換的二極體， 疋利用蕭特基勢壘(Schottky Barrier)特性而產生的電子元件，蕭特基二極體 疋利用金屬-半導體接面作為蕭特基勢壘，以產生整流的效果，蕭特基勢壘 的特性使得蕭特基二極體的導通電壓降較低，而且可以提高切換的速度， 而廣泛被使用於如交換式電源供應器、通訊設備等需高速開關切換的場合 中，但蕭特基二極體最大的缺點是其反向偏壓較低，像使用料金屬為材 料的簫特基二極體，其反向偏壓贼耐壓較低，且反向漏電流不但較大， .而且會隨著溫度昇高而增加到提高，可能會造成溫昇失控_題，致使蕭 鲁特基二極體於實際使用時的反向偏壓必需限制比其額定值小报多，而讓蕭 特基二極體的應用受到限制。 —、’_°偁〒加入溝槽結構，以期改盖上 獅鲁辦铺_™ ㈣處基勢#二極體」轉彻，職示典飾之溝 基-極體結構，但《糾料輕錢切，並於氧 ♦，雖可改善溝槽邊緣生成不良的鳥嘴效應，但漏電流仍有=== 層邊緣逆流，且軸峨並沒有降低，對於_溫昇之細， M403749 的改善’另外，反向偏壓偏之電壓值偏低，也沒顯著改善βM403749 V. New description: [New technical field] This creation is about a Schottky diode structure, especially a method in which at least one layer of semiconductor high-concentration doping layer is combined in a trench to form a super junction effect. It has a Schottky diode with low forward resistance and low reverse leakage current. w [Prior Art] The conventional Schottky diode is a diode that has a low turn-on voltage drop and allows high-speed switching, and uses electronic components generated by Schottky Barrier characteristics. The diode 疋 utilizes a metal-semiconductor junction as a Schottky barrier to produce a rectifying effect. The characteristics of the Schottky barrier make the conduction voltage drop of the Schottky diode lower, and the switching speed can be increased. Widely used in applications such as switching power supplies, communication equipment, etc., where high-speed switching is required, but the biggest disadvantage of Schottky diodes is that their reverse bias is low, like using metal as material.箫特基二体, its reverse bias thief has low withstand voltage, and the reverse leakage current is not only large, but also increases with the increase of temperature, which may cause the temperature rise to run out of control. The reverse bias of the Xiaolutji diode in actual use must be limited to more than its rated value, and the application of the Schottky diode is limited. —, '_°偁〒Add to the groove structure, in order to change the cover of the lion's office _TM (4) at the base of the #二极体", the job shows the ditch-based structure, but Light money cut, and oxygen ♦, although it can improve the bad bird's mouth effect, but the leakage current still === layer edge countercurrent, and the axis 峨 does not decrease, for the _ temperature rise fine, M403749 Improved 'In addition, the reverse bias bias voltage is low and does not significantly improve β
另外，如中國專利第ZL02811144.3號「溝槽肖特基整流器」發明專利 案、第ZL02810570.2號「雙掩模溝槽肖特基整流器及其製造方法」發明專利 案、美國發明專利第 642幻42 號「SCHOTTKY DIODE WITH DIELECTRIC TRENCH」發明專利案也有類似的溝槽設計，同樣也會產生上述前案之順向 ‘ 阻抗未有效降低、熱損溫昇未改善及逆向漏電流無法有效降低、逆向偏壓 ' 之電壓值偏低受限制等問題，且該前案中的製程相當繁複，需要使用至少 ^ 二種光罩分別進行侧處理，製造成本偏高，不符經濟效益，而不利於產 業利用。 【新型内容】 上述習知蕭特基二極體之溝槽結構，由於結構複雜，製造成本高，且 仍存在順向阻抗未有效降低、熱損溫昇未改善及逆向漏電流無法有效降 低、逆向電壓值偏低受限制等問題與缺點。 “ 冑鑑於此，極需要發展—種難基二極體，製造成本低，且在順向偏 Φ 壓蚪阻抗低，可有效降低熱損，並使逆向偏壓時之逆向漏電流降低與有較 南之逆向偏壓電壓值，使其應用不受太多限制。 緣此’本創作之主要目的，係在提供一種蕭特基二極體結構，包含— 半V體基層 曰層、至少一南濃度摻雜層、一介電層 '多晶石夕層及一 導體層’其巾’該半導縣層為陰極層結合於半導縣層之上， 該蟲晶層上钱刻形成複數溝槽，該高濃度摻雜層為高濃度半導體推雜區 塊，結合於溝槽之相’使該高濃度雜層表面雜織晶層，該介電層 結合於高濃度摻雜層内面，該多晶石夕層結合於介電層内面，該導體層結合 於遙晶層及各溝槽上端，以使料體層形成陽極端，以藉由該^農度摻雜 層使該半導體基層陰極端與導體層之陽極端於順向偏壓狀態下，降低順向 4 M403749 導通阻抗，以及，藉由該高濃度摻雜層所形成之超級接面結構效應，使半 導體基層陰極端與導體層之陽極端於逆向偏壓狀態下，可降低其逆向漏電 流及具有較高之逆向偏壓值》 本創作之蕭特基二極體結構之功效，係在於藉由該高濃度摻雜層結合 於該溝槽之最外層’使半導體基層陰極端與導體層之陽極歧於順向偏壓 情況下’可以提供順向導通低阻抗作帛，以及，有效降低熱損溫昇並於 半導體基層陰極端與導體層之陽極端處於逆向偏壓情況下，由該高濃度摻 ' 雜層與半導體基層、遙晶層、介電層、多㈣層及導體層間形成如同超級 鲁接面之效應，讓逆向漏電流大幅降低。 【實施方式】 請參閱第一圖所示，為本創作之蕭特基二極體結構100的第一實施例， 其中，該蕭特基二極體結構100係包括一半導體基層10，該半導體基層1〇 為N+基材，作為陰極端’一遙晶層2〇，為低濃度換雜N磊晶結合於半導 體基層10之上’該磊晶層20上蝕刻形成複數溝槽3〇，該溝槽3〇之形狀不 限’在第一實施例中，係以矩形槽為例。 , 1少—高濃度雜層4G為高濃度P+半導體摻雜塊，結合於該溝槽 • 30之外® ’使該焉:農度擦雜'營40表面鄰接該蟲晶層2〇。 -介電層5〇結合於高濃度摻雜層4〇内面，該介電層％為氧化物構成， 如以氧化矽(Si02)構成。 一多晶石夕層60結合於介電層5〇内面。 -導體層70結合於蠢晶層20及各溝槽3〇上端，並結合該县晶層2〇 中之各溝槽30之高濃度掺雜層4〇、介電層％及多晶賴6〇上端，以使該 導體層7〇形成陽極端，該導體層％為蕭特基屏障金屬(Sch〇ttky咖邮，可 以疋鈦(Τι)、_t)等金屬，藉由麵方式結合於蠢晶層2Q及各溝槽如之 高濃度摻雜層40、介電層50及多晶矽層6〇上端。 5 M403749 清再配合第二圖所示，為本創作之蕭特基二極體結構丨⑻的較佳應用 例其中’顯不該導體層70與半導體基層10處於順向偏壓之操作狀態， 此時藉由4P+之高濃度摻雜層4〇,提供順向電流另一低阻抗導通路徑(如 第二圖中之各箭頭方向所示），使該整體順向偏壓之阻抗有效降低，並藉以 讓熱知降低，避免熱失控之現象，以確保元件整體之可靠度。 4再參閱第三圖所示’顯示本創作之蕭特基二極體結構⑽_之導體 層7〇與半導縣層1G處於勒偏壓之操作狀態，該高濃度_層4〇與半 導體基層1G如3層2G、介電層5G、多晶#層6G及導體層7G間形成如同In addition, as disclosed in the patent patent No. ZL02811144.3, "Turved Schottky Rectifier", No. ZL02810570.2, "Double Mask Trench Schottky Rectifier and Its Manufacturing Method", Patent Patent, US Invention Patent 642 Magic 42 "SCHOTTKY DIODE WITH DIELECTRIC TRENCH" invention patent case also has a similar groove design, will also produce the forward direction of the above case 'impedance is not effectively reduced, heat loss temperature rise is not improved and reverse leakage current can not be effectively reduced The voltage value of the reverse bias voltage is limited, and the process in the previous case is quite complicated. It is necessary to use at least two kinds of masks for side processing, which is high in manufacturing cost and is not economical, and is not conducive to Industrial use. [New content] The above-mentioned Schottky diode structure has a complicated structure and high manufacturing cost, and there is still no effective reduction of the forward impedance, no improvement in the heat loss temperature rise, and inability to effectively reduce the reverse leakage current. Problems and disadvantages such as low reverse voltage values are limited.胄 In view of this, it is extremely necessary to develop a kind of difficult-to-base diode, which has low manufacturing cost and low 蚪 蚪 impedance in the forward direction, which can effectively reduce the heat loss and reduce the reverse leakage current in the reverse bias. The southerly reverse bias voltage value makes its application not too restrictive. Therefore, the main purpose of this creation is to provide a Schottky diode structure, including - a half V body base layer, at least one a south concentration doped layer, a dielectric layer 'polycrystalline stone layer and a conductor layer', and the semi-conducting layer is a cathode layer bonded to the semi-conducting county layer, and the insect layer is formed on the layer a trench, the high-concentration doped layer is a high-concentration semiconductor dummy block, and the phase of the trench is bonded to the surface of the high-concentration impurity layer, and the dielectric layer is bonded to the inner surface of the high-concentration doped layer. The polycrystalline layer is bonded to the inner surface of the dielectric layer, and the conductor layer is bonded to the telecrystal layer and the upper ends of the trenches, so that the material layer forms an anode end, so that the semiconductor base layer is made by the doping layer Extremely opposite to the anode end of the conductor layer in the forward biased state, reducing the forward 4 M403749 conduction And, by the super junction structure effect formed by the high concentration doping layer, the anode end of the semiconductor substrate and the anode end of the conductor layer are reverse biased, and the reverse leakage current is reduced and has a higher Reverse bias value The effect of the Schottky diode structure of the present invention is that the anode layer of the semiconductor substrate and the anode of the conductor layer are separated by the high-concentration doping layer bonded to the outermost layer of the trench. In the case of bias voltage, it can provide a low-impedance operation, and effectively reduce the heat loss temperature rise and is reverse biased at the cathode end of the semiconductor substrate and the anode end of the conductor layer, and the high concentration is mixed. The layer forms a super-lu-junction effect between the semiconductor base layer, the remote layer, the dielectric layer, the multiple (four) layer and the conductor layer, and the reverse leakage current is greatly reduced. [Embodiment] Please refer to the first figure for the creation A first embodiment of the Schottky diode structure 100, wherein the Schottky diode structure 100 comprises a semiconductor substrate 10, the semiconductor substrate 1 is an N+ substrate, and the cathode end is a remote crystal. 2〇, for low concentration, the N is epitaxially bonded to the semiconductor substrate 10, and the epitaxial layer 20 is etched to form a plurality of trenches 3〇, the shape of the trench 3〇 is not limited to the first embodiment, Take a rectangular groove as an example. 1 A small-high concentration heterogeneous layer 4G is a high-concentration P+ semiconductor doped block, combined with the groove • 30 outside the ''the 焉: agricultural degree rubbing' camp 40 surface adjacent to the The worm layer is 2 〇. The dielectric layer 5 〇 is bonded to the inner surface of the high-concentration doped layer 4, and the dielectric layer is composed of an oxide, such as yttrium oxide (SiO 2 ). The inner surface of the dielectric layer 5 is formed. The conductor layer 70 is bonded to the upper end of the stray layer 20 and the trenches 3, and is combined with the high concentration doping layer 4 of each trench 30 in the county layer 2 The upper layer of the electric layer and the upper end of the polycrystalline ray 6 , so that the conductor layer 7 〇 forms an anode end, and the conductor layer % is a Schottky barrier metal (Sch〇ttky café, which can be made of titanium (Τι), _t) The surface layer is bonded to the stray layer 2Q and the trenches such as the high concentration doping layer 40, the dielectric layer 50, and the upper end of the polysilicon layer 6〇. 5 M403749 is further shown in the second figure, which is a preferred application example of the Schottky diode structure (8) of the present invention, in which the conductor layer 70 and the semiconductor substrate 10 are in a forward biased operation state. At this time, the high-concentration doping layer 4〇 of 4P+ provides another low-impedance conduction path of the forward current (as indicated by the directions of the arrows in the second figure), so that the impedance of the overall forward bias is effectively reduced. And to reduce the heat, to avoid the phenomenon of thermal runaway, to ensure the reliability of the overall component. 4 Referring to the third figure, the display of the Schottky diode structure (10) of the present invention (10)_the conductor layer 7〇 and the semi-conductor layer 1G are in a biased operation state, the high concentration layer 4 and the semiconductor The base layer 1G is formed like a 3 layer 2G, a dielectric layer 5G, a polycrystalline layer 6G, and a conductor layer 7G.
纛 超級接面之效應，而可大餅低其逆向漏糕及具雜高的勒偏磨值。 請，配合第四圖及第五圖所示，分別為本創作之蕭特基二極體結構ι〇〇 第貫知例及第把例’其中，第四圖顯示該溝槽3。之形狀為彈頭形 狀；該第五圖令顯示該溝槽3〇之形狀為梯形，同樣可達到上述導體層川 與半導體基層U)歧順向碰之缝，錢髓軸偏紅阻抗θ有效 降低’亚料讓熱撕低，以及，逆向驗時，可大幅降低其逆向漏電流 與具有較高的逆向偏壓值等功效。 请再參閱第六圖及第七圖所示，為本創作之蕭特基二_結構刚於 順向偏壓及逆向偏壓娜桃_，其中，該第六圖及第七圖之座標縱轴 為電流I ’單位為安培/微米’座標橫軸為電壓V，單位為伏特，由 中顯不，代表本創作之蕭特基二極體結構100之第一曲線S1，以及，對2 組之習知具溝槽但不具高漢度播雜層40之蕭特基二極體之第二曲線幻，兩 者之間相W，可鴨看出本創作之蕭絲二極體結構丨⑻之第— 的順向阻抗較低，且熱損雜小；糾，第七_示逆絲態下，代 創作之蕭絲三極體結構100之第三曲線S3，以及，触紙 但不具高濃度摻雜層40之_基二極體之第二轉％，兩者之剛目^^ 可明顯看出本創作之蕭絲二極體結構卿於逆偏狀態下，該第n 的逆向漏紐錄低’且具雜細勒碰值。 —，·， 6 M403749 請再配合第八圖所示，為本創作之蕭特基二極體結構⑽中之各溝槽 30之南濃度摻騎40，於順向偏壓所產生之空間電荷分佈情形，兑中，可 以明顯看出各溝槽30之高濃度摻雜層料部附近明顯產生兩個高密度電 荷區S5及S6’更進，證糊狀f縣二極體結構丨⑻在軸偏壓狀 態下，具有較低之順向阻抗與低熱損之優點與功效。 ,τ上所述本創作之蕭特基一極體結構所列舉之各圖式及說明，係為 便於說明本_之技彳_容，所聽之魏例之1，_以限制本創 作之範t舉凡是針對本創作之結構細部或树崎效變更與置換，當屬 本創作之㈣，其細將由以下㈣請專利細來界定之。 【圖式簡單說明】 第-圖為本創作之蕭二極體結構之第一實施例圖； 第二圖為本餅之齡基二極體結構之較佳應用例圖； 第三圖為細於第二圖之剖簡，其中，顯補導與半導體基層於逆 向偏壓操作狀態； 第四圖為本創作之蕭特基二極體結構之第二實施例圖； 第五圖為本創作之蕭特基二極體結構之第二實施例圖； 弟六圖為本創作之肅特基二極體結構於順向偏壓狀態之實際嫩猶圖； 第七圖為本創作之齡基二極體結構於逆向偏壓狀態之實_試曲線圖； 第入圖為本創作之蕭縣二極觀構於軸偏壓狀態之各溝槽之高濃 度掺雜層’於順向偏壓所產生之空間電荷八佈^ 【主要元件符號說明】 半導體基層 溝槽 5〇介電層 70導體層 100蕭特基二極體結構 20 遙晶層 40 高濃度摻雜層 60 多晶矽層 7超级 The effect of super junction, but the cake can be low in reverse and leaking. Please refer to the fourth and fifth figures for the creation of the Schottky diode structure ι〇〇 first example and the first example. The fourth figure shows the groove 3. The shape is a warhead shape; the fifth figure shows that the shape of the groove 3〇 is trapezoidal, and the seam of the conductor layer and the semiconductor base layer U) is also achieved, and the reddish impedance θ of the money core axis is effectively reduced. 'Asian material makes the heat tear low, and, in the reverse test, it can greatly reduce its reverse leakage current and has a higher reverse bias value. Please refer to the sixth and seventh figures. The Schottky II structure of this creation is just in the forward bias and reverse biased nano peach _, wherein the coordinates of the sixth and seventh figures are vertical. The axis is the current I' unit is ampere/micron'. The horizontal axis of the coordinate is the voltage V in volts. It is represented by the middle curve, which represents the first curve S1 of the Schottky diode structure 100 of this creation, and, for the 2 groups. The second curve of the Schottky diode of the grooved but not high-degree broadcast layer 40, the phase between the two, the duck can see the creation of the Xiaosi diode structure 丨 (8) The first--the forward impedance is low, and the heat loss is small; the correction, the seventh_inverse-state, the third curve S3 of the Xiaosi triode structure 100, and the paper touch but not high The second turn % of the bismuth diode of the concentration doping layer 40, the two of which are clearly visible, can clearly show that the negative electrode of the present invention is in the reverse bias state, the nth reverse leak The New Zealand record is low and has a small number of hits. —,·, 6 M403749 Please match the space density generated by forward biasing 40 in the south concentration of each groove 30 in the Schottky diode structure (10) of the present creation. In the case of distribution, it can be clearly seen that two high-density charge regions S5 and S6' are more likely to be generated near the high-concentration doped layer of each trench 30, and the paste-like f-counter diode structure 丨(8) is Under the bias state of the shaft, it has the advantages and effects of lower forward impedance and low heat loss. The various schemas and descriptions listed in the Schottky's one-pole structure of the creation described above on τ are for the convenience of explaining the technical _ _ of the _, the Wei zhi of the 1st, _ to limit the creation of this Fan T ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ [Simple diagram of the diagram] The first diagram is a first embodiment of the structure of the Xiao Erite structure of the creation; the second diagram is a preferred application diagram of the structure of the base diode of the cake; In the second diagram, the display and the semiconductor substrate are in a reverse bias operation state; the fourth figure is a second embodiment of the Schottky diode structure of the creation; The second embodiment of the Schottky diode structure; the sixth figure is the actual tender state of the Sutji diode structure in the forward bias state; The actual structure of the polar body structure in the reverse bias state is shown in Fig. 1. The first figure is the high-density doping layer of each groove of the Xiaoxian dipole viewed in the axis bias state. Generated space charge 八布 ^ [Main component symbol description] Semiconductor base layer trench 5 〇 Dielectric layer 70 Conductor layer 100 Schottky diode structure 20 Tele-crystal layer 40 High-concentration doped layer 60 Polycrystalline layer 7