FR3093862B1 - Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN - Google Patents

Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN Download PDF

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Publication number
FR3093862B1
FR3093862B1 FR1902447A FR1902447A FR3093862B1 FR 3093862 B1 FR3093862 B1 FR 3093862B1 FR 1902447 A FR1902447 A FR 1902447A FR 1902447 A FR1902447 A FR 1902447A FR 3093862 B1 FR3093862 B1 FR 3093862B1
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France
Prior art keywords
ingan
type injection
injection layer
semiconductor structure
layer
Prior art date
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Active
Application number
FR1902447A
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English (en)
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FR3093862A1 (fr
Inventor
David Sotta
Mariia Rozhavskaia
Benjamin Damilano
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Soitec SA
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Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1902447A priority Critical patent/FR3093862B1/fr
Priority to TW109105908A priority patent/TW202101784A/zh
Priority to EP20706729.9A priority patent/EP3939097A1/fr
Priority to CN202080008522.XA priority patent/CN113272972A/zh
Priority to PCT/EP2020/054825 priority patent/WO2020182457A1/fr
Priority to US17/435,014 priority patent/US20220140190A1/en
Publication of FR3093862A1 publication Critical patent/FR3093862A1/fr
Application granted granted Critical
Publication of FR3093862B1 publication Critical patent/FR3093862B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L’invention porte sur une structure semi-conductrice optoélectronique (SC) comprenant une couche active (6) à base d’InGaN disposée entre une couche d'injection de type n (5) et une couche d'injection de type p (7), la couche d'injection de type p (7) comprenant une première couche d’InGaN (7a) en contact avec la couche active et, disposée sur la première couche (7a), une deuxième couche (7b) présentant une partie superficielle en GaN. Figure à publier avec l’abrégé : Fig. 1
FR1902447A 2019-03-11 2019-03-11 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN Active FR3093862B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1902447A FR3093862B1 (fr) 2019-03-11 2019-03-11 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN
TW109105908A TW202101784A (zh) 2019-03-11 2020-02-24 包含基於ingan之p型注入層之光電半導體結構
EP20706729.9A EP3939097A1 (fr) 2019-03-11 2020-02-25 Structure semi-conductrice optoélectronique comprenant une couche d'injection de type p à base d'ingan
CN202080008522.XA CN113272972A (zh) 2019-03-11 2020-02-25 包括基于InGaN的P型注入层的光电半导体结构
PCT/EP2020/054825 WO2020182457A1 (fr) 2019-03-11 2020-02-25 Structure semi-conductrice optoélectronique comprenant une couche d'injection de type p à base d'ingan
US17/435,014 US20220140190A1 (en) 2019-03-11 2020-02-25 Optoelectronic semiconductor structure comprising a p-type injection layer based on ingan

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1902447 2019-03-11
FR1902447A FR3093862B1 (fr) 2019-03-11 2019-03-11 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN

Publications (2)

Publication Number Publication Date
FR3093862A1 FR3093862A1 (fr) 2020-09-18
FR3093862B1 true FR3093862B1 (fr) 2022-07-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1902447A Active FR3093862B1 (fr) 2019-03-11 2019-03-11 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN

Country Status (6)

Country Link
US (1) US20220140190A1 (fr)
EP (1) EP3939097A1 (fr)
CN (1) CN113272972A (fr)
FR (1) FR3093862B1 (fr)
TW (1) TW202101784A (fr)
WO (1) WO2020182457A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230131918A1 (en) * 2021-10-25 2023-04-27 Meta Platforms Technologies, Llc Strain management of iii-p micro-led epitaxy towards higher efficiency and low bow

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0215852A1 (fr) 1985-03-08 1987-04-01 Hubert Petutschnig Moteur a piston rotatif
DE8509328U1 (de) 1985-03-28 1985-10-10 Aluminium-Walzwerke Singen Gmbh, 7700 Singen Verbundelement aus zwei aneinander festliegenden Profilelementen
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP3645233B2 (ja) * 2001-06-07 2005-05-11 日本電信電話株式会社 半導体素子
CN102157656B (zh) * 2011-01-26 2012-09-26 中山大学 一种加强载流子注入效率的氮化物发光二极管以及制作方法
US9029867B2 (en) * 2011-07-08 2015-05-12 RoseStreet Labs Energy, LLC Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates
JP5598437B2 (ja) * 2011-07-12 2014-10-01 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5874593B2 (ja) * 2011-12-23 2016-03-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
FR2992465B1 (fr) * 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
KR20150025264A (ko) * 2013-08-28 2015-03-10 삼성전자주식회사 정공주입층을 구비하는 반도체 발광 소자 및 그 제조 방법
US9059356B1 (en) * 2013-11-22 2015-06-16 Sandia Corporation Laterally injected light-emitting diode and laser diode

Also Published As

Publication number Publication date
WO2020182457A1 (fr) 2020-09-17
CN113272972A (zh) 2021-08-17
FR3093862A1 (fr) 2020-09-18
US20220140190A1 (en) 2022-05-05
TW202101784A (zh) 2021-01-01
EP3939097A1 (fr) 2022-01-19

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