FR3061603B1 - Dispositif optoelectronique a diodes electroluminescentes - Google Patents

Dispositif optoelectronique a diodes electroluminescentes Download PDF

Info

Publication number
FR3061603B1
FR3061603B1 FR1663509A FR1663509A FR3061603B1 FR 3061603 B1 FR3061603 B1 FR 3061603B1 FR 1663509 A FR1663509 A FR 1663509A FR 1663509 A FR1663509 A FR 1663509A FR 3061603 B1 FR3061603 B1 FR 3061603B1
Authority
FR
France
Prior art keywords
stack
substrate
face
openings
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1663509A
Other languages
English (en)
Other versions
FR3061603A1 (fr
Inventor
Zheng-Sung Chio
Wei Sin Tan
Vincent Beix
Philippe Gilet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1663509A priority Critical patent/FR3061603B1/fr
Application filed by Aledia filed Critical Aledia
Priority to JP2019535789A priority patent/JP7306992B2/ja
Priority to TW106146147A priority patent/TWI750289B/zh
Priority to US16/475,066 priority patent/US10916580B2/en
Priority to PCT/EP2017/084776 priority patent/WO2018122354A1/fr
Priority to EP17822339.2A priority patent/EP3563425B1/fr
Priority to CN201780081858.7A priority patent/CN110168753B/zh
Priority to KR1020197021899A priority patent/KR102496367B1/ko
Publication of FR3061603A1 publication Critical patent/FR3061603A1/fr
Application granted granted Critical
Publication of FR3061603B1 publication Critical patent/FR3061603B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

L'invention concerne un procédé de fabrication d'un dispositif optoélectronique (10) comprenant les étapes successives suivantes : a) prévoir un substrat au moins en partie formé d'un matériau semiconducteur et ayant des première et deuxième faces opposées ; b) former un empilement (19) de couches semiconductrices (22, 23, 24) sur la première face, ledit empilement (19) comprenant des troisième et quatrième faces opposées (20, 21), la quatrième face (21) étant du côté du substrat, ledit empilement comprenant des diodes électroluminescentes (16) ; c) former des ouvertures (34) traversantes dans le substrat du côté de la deuxième face, lesdites ouvertures faisant face au moins en partie aux diodes électroluminescentes et délimitant des murs (30) dans le substrat ; d) former des plots conducteurs (36) sur la quatrième face dans au moins certaines des ouvertures en contact avec l'empilement ; et e) former des blocs photoluminescents (38) dans au moins certaines des ouvertures.
FR1663509A 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes Active FR3061603B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1663509A FR3061603B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
TW106146147A TWI750289B (zh) 2016-12-29 2017-12-28 具有發光二極體的光電裝置
US16/475,066 US10916580B2 (en) 2016-12-29 2017-12-28 Optoelectronic device with light-emitting diodes
PCT/EP2017/084776 WO2018122354A1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes
JP2019535789A JP7306992B2 (ja) 2016-12-29 2017-12-28 発光ダイオードを備えた光電子デバイス
EP17822339.2A EP3563425B1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique avec diodes électroluminescentes et procédé de fabrication
CN201780081858.7A CN110168753B (zh) 2016-12-29 2017-12-28 具有发光二极管的光电器件
KR1020197021899A KR102496367B1 (ko) 2016-12-29 2017-12-28 발광다이오드를 구비한 광전자장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1663509 2016-12-29
FR1663509A FR3061603B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes

Publications (2)

Publication Number Publication Date
FR3061603A1 FR3061603A1 (fr) 2018-07-06
FR3061603B1 true FR3061603B1 (fr) 2021-01-29

Family

ID=58737671

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1663509A Active FR3061603B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes

Country Status (8)

Country Link
US (1) US10916580B2 (fr)
EP (1) EP3563425B1 (fr)
JP (1) JP7306992B2 (fr)
KR (1) KR102496367B1 (fr)
CN (1) CN110168753B (fr)
FR (1) FR3061603B1 (fr)
TW (1) TWI750289B (fr)
WO (1) WO2018122354A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018118808A1 (de) * 2018-08-02 2020-02-06 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines bauteils und optoelektronisches bauteil
KR20200062863A (ko) 2018-11-27 2020-06-04 삼성전자주식회사 디스플레이 장치 및 제조 방법
DE102019107030A1 (de) * 2019-03-19 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische halbleitervorrichtung mit einer vielzahl von bildelementen und trennelementen und verfahren zur herstellung der optoelektronischen halbleitervorrichtung
GB2593699B (en) * 2020-03-30 2022-10-26 Plessey Semiconductors Ltd Monolithic LED pixel
CN112864290B (zh) * 2020-04-09 2022-04-22 镭昱光电科技(苏州)有限公司 微型led显示器及其制造方法
JP7091598B2 (ja) * 2020-05-20 2022-06-28 日亜化学工業株式会社 発光装置の製造方法
TWI729846B (zh) * 2020-06-10 2021-06-01 友達光電股份有限公司 發光裝置
US20230268468A1 (en) * 2022-02-22 2023-08-24 Osram Opto Semiconductors Gmbh Light emitting semiconductor chip and method for manufacturing a plurality of light emitting semiconductor chips

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5449926A (en) * 1994-05-09 1995-09-12 Motorola, Inc. High density LED arrays with semiconductor interconnects
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
EP1700329A2 (fr) 2003-12-22 2006-09-13 Koninklijke Philips Electronics N.V. Fabrication d'un ensemble de nanofils semi-conducteurs, et composant electrique comportant un ensemble de nanofils
CN100487931C (zh) * 2004-09-27 2009-05-13 松下电器产业株式会社 半导体发光元件及其制造方法和安装方法、发光器件
KR100755598B1 (ko) 2006-06-30 2007-09-06 삼성전기주식회사 질화물 반도체 발광소자 어레이
JP5091445B2 (ja) * 2006-09-15 2012-12-05 株式会社東芝 半導体装置およびその製造方法
JP5253740B2 (ja) 2007-01-09 2013-07-31 学校法人上智学院 Ｉｉｉ族窒化物半導体微細柱状結晶の製造方法およびｉｉｉ族窒化物構造体
KR101468696B1 (ko) * 2007-12-31 2014-12-08 서울반도체 주식회사 발광 소자
DE102008016534A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
JP2010040867A (ja) * 2008-08-06 2010-02-18 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
US20110140072A1 (en) 2008-08-21 2011-06-16 Nanocrystal Corporation Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques
TW201044568A (en) 2009-04-20 2010-12-16 3M Innovative Properties Co Non-radiatively pumped wavelength converter
JP5277270B2 (ja) 2010-07-08 2013-08-28 学校法人立命館 結晶成長方法および半導体素子
EP2495772A1 (fr) * 2011-03-02 2012-09-05 Azzurro Semiconductors AG Dispositif électroluminescent semi-conducteur
US8796665B2 (en) * 2011-08-26 2014-08-05 Micron Technology, Inc. Solid state radiation transducers and methods of manufacturing
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
FR2985989B1 (fr) 2012-01-23 2017-03-03 Commissariat Energie Atomique Procede d'isolation de nanofils ou de microfils
JP3174776U (ja) 2012-01-26 2012-04-05 サンケン電気株式会社 半導体発光装置
KR20130104612A (ko) * 2012-03-14 2013-09-25 서울바이오시스 주식회사 발광 다이오드 및 그것을 제조하는 방법
TWI480660B (zh) * 2012-12-25 2015-04-11 Au Optronics Corp 顯示裝置
FR3003403B1 (fr) * 2013-03-14 2016-11-04 Commissariat Energie Atomique Procede de formation de diodes electroluminescentes
US9059339B1 (en) * 2014-02-11 2015-06-16 International Business Machines Corporation Light emitting diodes with via contact scheme
DE102014112551A1 (de) * 2014-09-01 2016-03-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US20160141446A1 (en) * 2014-11-18 2016-05-19 PlayNitride Inc. Method for manufacturing light emitting device
DE102015103055A1 (de) * 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
TWI543394B (zh) * 2014-12-05 2016-07-21 Electroluminescence and Photoluminescence Multiband White Light Emitting Diodes
JP5838357B1 (ja) 2015-01-13 2016-01-06 パナソニックＩｐマネジメント株式会社 発光装置及びその製造方法
FR3033939B1 (fr) * 2015-03-20 2018-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente

Also Published As

Publication number Publication date
CN110168753B (zh) 2022-03-08
US20190326351A1 (en) 2019-10-24
EP3563425B1 (fr) 2023-05-17
US10916580B2 (en) 2021-02-09
EP3563425A1 (fr) 2019-11-06
TWI750289B (zh) 2021-12-21
WO2018122354A1 (fr) 2018-07-05
KR102496367B1 (ko) 2023-02-03
JP7306992B2 (ja) 2023-07-11
TW201838202A (zh) 2018-10-16
CN110168753A (zh) 2019-08-23
KR20190098239A (ko) 2019-08-21
FR3061603A1 (fr) 2018-07-06
JP2020503691A (ja) 2020-01-30

Similar Documents

Publication Publication Date Title
FR3061603B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
FR3061608B1 (fr) Dispositif optoelectronique a diodes electroluminescentes
US7732802B2 (en) Semiconductor light emitting device
FR3073669B1 (fr) Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes
TW200701526A (en) Vertical group iii-nitride light emitting device and method for manufacturing the same
TW200739949A (en) Gallium nitride type compound semiconductor light-emitting device and process for producing the same
TW200644287A (en) Polarization-reversed III-nitride light-emitting device
WO2008153130A1 (fr) Élément électroluminescent semi-conducteur de nitrure et procédé de fabrication d'un semi-conducteur de nitrure
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
WO2004075253A3 (fr) Del inversee sur substrat conducteur
TW200638562A (en) Light-emitting device, method for making the same, and nitride semiconductor substrate
TW200705709A (en) Method of making a vertical light emitting diode
EP1968104A3 (fr) Dispositif semi-conducteur et procédé de fabrication de celui-ci
TW200733419A (en) Light emitting diode bonded with metal diffusion and manufacturing method thereof
EP3065186A3 (fr) Élément électroluminescent semi-conducteur et son procédé de fabrication
WO2006086387A9 (fr) Dispositif electroluminescent semiconducteur
JP2015119123A (ja) 発光チップ
WO2009120990A3 (fr) Diode électroluminescente ultraviolette/diode laser avec super-réseau imbriqué
TW200644285A (en) Semiconductor light emitting device, semiconductor light emitting apparatus, and method of manufacturing semiconductor light emitting device
SG127832A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
TW200731629A (en) Nitride semiconductor light-emitting device and the method of manufacturing the same
JP2016189472A5 (fr)
TW200644281A (en) Light-emitting device
DE602006002459D1 (de) Optoelektronische Vorrichtung mit einem Laser mit integriertem Modulator und Herstellungsverfahren dafür
WO2008084834A1 (fr) Elément électroluminescent semi-conducteur à base de gan

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20180706

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8