FR3061608B1 - Dispositif optoelectronique a diodes electroluminescentes - Google Patents

Dispositif optoelectronique a diodes electroluminescentes Download PDF

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Publication number
FR3061608B1
FR3061608B1 FR1663508A FR1663508A FR3061608B1 FR 3061608 B1 FR3061608 B1 FR 3061608B1 FR 1663508 A FR1663508 A FR 1663508A FR 1663508 A FR1663508 A FR 1663508A FR 3061608 B1 FR3061608 B1 FR 3061608B1
Authority
FR
France
Prior art keywords
emitting diodes
substrate
light
forming
optoelectronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1663508A
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English (en)
Other versions
FR3061608A1 (fr
Inventor
Zheng-Sung Chio
Wei Sin Tan
Vincent Beix
Philippe Gilet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1663508A priority Critical patent/FR3061608B1/fr
Application filed by Aledia filed Critical Aledia
Priority to JP2019535940A priority patent/JP6872619B2/ja
Priority to KR1020197021931A priority patent/KR102468911B1/ko
Priority to EP17822340.0A priority patent/EP3563417B1/fr
Priority to US16/473,551 priority patent/US10734442B2/en
Priority to PCT/EP2017/084778 priority patent/WO2018122355A1/fr
Priority to CN201780086474.4A priority patent/CN110313069B/zh
Priority to TW106146178A priority patent/TWI758392B/zh
Publication of FR3061608A1 publication Critical patent/FR3061608A1/fr
Application granted granted Critical
Publication of FR3061608B1 publication Critical patent/FR3061608B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

L'invention concerne un procédé de fabrication d'un dispositif optoélectronique (10), comprenant les étapes successives suivantes : a) prévoir un substrat au moins en partie en un matériau semiconducteur et ayant des première et deuxième faces opposées ; b) former des diodes électroluminescentes (16) sur le substrat, chaque diode électroluminescente comprenant un microfil ou nanofil semiconducteur (46) recouvert d'une coque ; c) former une couche d'encapsulation (50) entourant les diodes électroluminescentes ; d) former des plots conducteurs (18) sur la couche d'encapsulation, du côté de la couche d'encapsulation opposé au substrat, en contact avec les diodes électroluminescentes ; et e) former des ouvertures traversantes (26) dans le substrat depuis le côté de la deuxième face, lesdites ouvertures faisant face au moins en partie aux diodes électroluminescentes et délimitant des murs (28) dans le substrat.
FR1663508A 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes Expired - Fee Related FR3061608B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1663508A FR3061608B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
KR1020197021931A KR102468911B1 (ko) 2016-12-29 2017-12-28 발광다이오드를 구비한 광전자장치
EP17822340.0A EP3563417B1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes
US16/473,551 US10734442B2 (en) 2016-12-29 2017-12-28 Optoelectronic device with light-emitting diodes
JP2019535940A JP6872619B2 (ja) 2016-12-29 2017-12-28 発光ダイオードを備えた光電子デバイス
PCT/EP2017/084778 WO2018122355A1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes
CN201780086474.4A CN110313069B (zh) 2016-12-29 2017-12-28 具有发光二极管的光电设备
TW106146178A TWI758392B (zh) 2016-12-29 2017-12-28 具有發光二極體的光電裝置及其製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1663508A FR3061608B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
FR1663508 2016-12-29

Publications (2)

Publication Number Publication Date
FR3061608A1 FR3061608A1 (fr) 2018-07-06
FR3061608B1 true FR3061608B1 (fr) 2019-05-31

Family

ID=58737670

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1663508A Expired - Fee Related FR3061608B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes

Country Status (8)

Country Link
US (1) US10734442B2 (fr)
EP (1) EP3563417B1 (fr)
JP (1) JP6872619B2 (fr)
KR (1) KR102468911B1 (fr)
CN (1) CN110313069B (fr)
FR (1) FR3061608B1 (fr)
TW (1) TWI758392B (fr)
WO (1) WO2018122355A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049900B2 (en) * 2018-08-30 2021-06-29 Analog Devices, Inc. Monolithically integrated nanoemitter light source assembly
JP2020141001A (ja) * 2019-02-27 2020-09-03 キオクシア株式会社 半導体装置および半導体装置の製造方法
US11094846B1 (en) * 2020-08-31 2021-08-17 4233999 Canada Inc. Monolithic nanocolumn structures
DE112022003001T5 (de) * 2021-09-08 2024-03-28 Ams-Osram International Gmbh Optoelektronisches bauelement, bauelementeinheit und verfahren zu deren herstellung
US11799054B1 (en) 2023-02-08 2023-10-24 4233999 Canada Inc. Monochromatic emitters on coalesced selective area growth nanocolumns

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9106056B1 (en) * 2007-04-25 2015-08-11 Stc.Unm Phase-coupled arrays of nanowire laser devices and method of controlling an array of such devices
US8964020B2 (en) * 2007-04-25 2015-02-24 Stc.Unm Solid-state microscope for selectively imaging a sample
KR101608868B1 (ko) * 2009-10-22 2016-04-04 삼성전자주식회사 조리개를 포함하는 발광다이오드 어레이, 이를 이용한 라인 프린터 헤드 및 발광다이오드 어레이의 제조방법
JP2011135058A (ja) * 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
CA2802539A1 (fr) * 2010-06-18 2011-12-22 Glo Ab Structure a diodes electroluminescentes de nanofils et procede de fabrication associe
US8350251B1 (en) * 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
DE102012109460B4 (de) * 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
WO2014066357A1 (fr) * 2012-10-26 2014-05-01 Glo Ab Structure de del à nanofil et procédé de fabrication de celle-ci
US9537044B2 (en) 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same
TW201511334A (zh) * 2013-06-07 2015-03-16 Glo Ab 具有經減低漏電之奈米線發光二極體結構及其製造方法
FR3007580B1 (fr) * 2013-06-25 2016-10-21 Commissariat Energie Atomique Dispositif optoelectronique a reflectivite amelioree
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
FR3011381B1 (fr) * 2013-09-30 2017-12-08 Aledia Dispositif optoelectronique a diodes electroluminescentes
US20160268488A1 (en) * 2013-10-29 2016-09-15 Osram Opto Semiconductors Gmbh Wavelength conversion element, method of making, and light-emitting semiconductor component having same
WO2015077623A1 (fr) * 2013-11-22 2015-05-28 Glo Ab Embase de led à interconnexions intégrées
KR20160024170A (ko) * 2014-08-25 2016-03-04 삼성전자주식회사 반도체 발광 소자
FR3031238B1 (fr) * 2014-12-30 2016-12-30 Aledia Dispositif optoelectronique a diodes electroluminescentes

Also Published As

Publication number Publication date
TW201839968A (zh) 2018-11-01
JP6872619B2 (ja) 2021-05-19
KR20190094471A (ko) 2019-08-13
KR102468911B1 (ko) 2022-11-18
EP3563417B1 (fr) 2020-10-28
US20190333963A1 (en) 2019-10-31
EP3563417A1 (fr) 2019-11-06
CN110313069B (zh) 2023-04-28
WO2018122355A1 (fr) 2018-07-05
JP2020503695A (ja) 2020-01-30
US10734442B2 (en) 2020-08-04
FR3061608A1 (fr) 2018-07-06
CN110313069A (zh) 2019-10-08
TWI758392B (zh) 2022-03-21

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