ATE535027T1 - Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht - Google Patents

Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht

Info

Publication number
ATE535027T1
ATE535027T1 AT07859487T AT07859487T ATE535027T1 AT E535027 T1 ATE535027 T1 AT E535027T1 AT 07859487 T AT07859487 T AT 07859487T AT 07859487 T AT07859487 T AT 07859487T AT E535027 T1 ATE535027 T1 AT E535027T1
Authority
AT
Austria
Prior art keywords
layer
strain
light
iii
stress
Prior art date
Application number
AT07859487T
Other languages
English (en)
Inventor
Sungsoo Yi
Aurelien J F David
Nathan F Gardner
Michael R Krames
Linda T Romano
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE535027T1 publication Critical patent/ATE535027T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AT07859487T 2006-12-22 2007-12-20 Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht ATE535027T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/615,479 US7663148B2 (en) 2006-12-22 2006-12-22 III-nitride light emitting device with reduced strain light emitting layer
PCT/IB2007/055263 WO2008078298A2 (en) 2006-12-22 2007-12-20 Iii-nitride light emitting device with reduced strain light emitting layer

Publications (1)

Publication Number Publication Date
ATE535027T1 true ATE535027T1 (de) 2011-12-15

Family

ID=39387241

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07859487T ATE535027T1 (de) 2006-12-22 2007-12-20 Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht

Country Status (11)

Country Link
US (1) US7663148B2 (de)
EP (1) EP2095436B1 (de)
JP (2) JP5420419B2 (de)
KR (2) KR101484467B1 (de)
CN (1) CN101601140B (de)
AT (1) ATE535027T1 (de)
BR (1) BRPI0720931B1 (de)
ES (1) ES2377487T3 (de)
RU (2) RU2457581C2 (de)
TW (2) TWI520371B (de)
WO (1) WO2008078298A2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101094913B1 (ko) * 2006-06-09 2011-12-16 소이텍 Iii-v 족 반도체 물질을 형성하기 위한 제조 공정 시스템
KR101330156B1 (ko) 2006-11-22 2013-12-20 소이텍 삼염화 갈륨 주입 구조
EP2094406B1 (de) 2006-11-22 2015-10-14 Soitec Verfahren, vorrichtung und absperrventil für die herstellung von einkristallinen gruppe iii-v halbleiter material
KR101353334B1 (ko) * 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
KR101379410B1 (ko) * 2006-11-22 2014-04-11 소이텍 3-5족 반도체 재료들의 대량생산을 위한 설비
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US8382898B2 (en) * 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
US9331240B2 (en) * 2008-06-06 2016-05-03 University Of South Carolina Utlraviolet light emitting devices and methods of fabrication
KR101034053B1 (ko) * 2010-05-25 2011-05-12 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
EP2583317A4 (de) 2010-06-18 2016-06-15 Glo Ab Nanodraht-led-struktur und verfahren zu ihrer herstellung
CN102447026B (zh) * 2010-10-11 2014-11-05 展晶科技(深圳)有限公司 发光二极管磊晶结构
US9184344B2 (en) 2012-01-25 2015-11-10 Invenlux Limited Lighting-emitting device with nanostructured layer and method for fabricating the same
CN106968014B (zh) 2012-03-21 2019-06-04 弗赖贝格化合物原料有限公司 用于制备iii-n单晶的方法以及iii-n单晶
CN104205366B (zh) 2012-03-30 2018-08-31 亮锐控股有限公司 密封的半导体发光器件
KR102337405B1 (ko) 2014-09-05 2021-12-13 삼성전자주식회사 나노구조 반도체 발광소자
KR102335105B1 (ko) 2014-11-14 2021-12-06 삼성전자 주식회사 발광 소자 및 그의 제조 방법
KR102376468B1 (ko) 2014-12-23 2022-03-21 엘지이노텍 주식회사 적색 발광소자 및 조명장치
CN105633229B (zh) * 2016-03-17 2020-05-12 天津三安光电有限公司 发光二极管及其制作方法
JP2019515860A (ja) * 2016-04-01 2019-06-13 ヘキサジェム アーベー Ｉｉｉ族窒化物材料の平坦な表面の形成
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
RU2698574C1 (ru) * 2018-11-28 2019-08-28 Акционерное общество "Научно-исследовательский институт молекулярной электроники" Способ изготовления полупроводниковой структуры, выступающей из монолитного кремниевого тела
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
US11164844B2 (en) * 2019-09-12 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Double etch stop layer to protect semiconductor device layers from wet chemical etch
US10847625B1 (en) 2019-11-19 2020-11-24 Opnovix Corp. Indium-gallium-nitride structures and devices
EP3855513A3 (de) * 2020-01-22 2021-11-03 Samsung Electronics Co., Ltd. Halbleiter-led und verfahren zur herstellung davon
KR102871497B1 (ko) * 2020-01-22 2025-10-15 삼성전자주식회사 반도체 발광 다이오드 및 그 제조 방법
JP2023062213A (ja) * 2020-03-23 2023-05-08 ソニーセミコンダクタソリューションズ株式会社 半導体装置およびその製造方法
WO2021195595A1 (en) * 2020-03-27 2021-09-30 Google Llc Indium gallium nitride light emitting diodes with reduced strain
CN120530477A (zh) 2022-12-30 2025-08-22 奥普诺维克斯公司 可变组成三元化合物半导体合金、结构和器件
WO2026006793A1 (en) 2024-06-28 2026-01-02 Opnovix Corp. Spontaneous and stimulated emission devices based on relaxed iii-nitride materials

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5779924A (en) 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP3612985B2 (ja) * 1998-02-02 2005-01-26 豊田合成株式会社 窒化ガリウム系化合物半導体素子及びその製造方法
US6091085A (en) 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US6046465A (en) 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
US6274924B1 (en) 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
RU2179353C2 (ru) * 1999-11-15 2002-02-10 Федеральное государственное унитарное предприятие "НИИПП" Полупроводниковый излучающий диод
JP2001185493A (ja) * 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP3841146B2 (ja) * 2000-06-23 2006-11-01 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US6841808B2 (en) 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
EP1378949A4 (de) * 2001-03-21 2006-03-22 Mitsubishi Cable Ind Ltd Lichtemittierendes halbleiterbauelement
US6829281B2 (en) * 2002-06-19 2004-12-07 Finisar Corporation Vertical cavity surface emitting laser using photonic crystals
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7085301B2 (en) * 2002-07-12 2006-08-01 The Board Of Trustees Of The University Of Illinois Photonic crystal single transverse mode defect structure for vertical cavity surface emitting laser
JP4748924B2 (ja) * 2002-12-05 2011-08-17 日本碍子株式会社 半導体積層構造
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
JP2004354617A (ja) * 2003-05-28 2004-12-16 Sharp Corp フォトニック結晶とその製造方法
US6847057B1 (en) 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US7122827B2 (en) 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
US7288797B2 (en) * 2004-01-20 2007-10-30 Nichia Corporation Semiconductor light emitting element
KR100601945B1 (ko) * 2004-03-10 2006-07-14 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
KR100552707B1 (ko) * 2004-04-07 2006-02-20 삼성전자주식회사 나노와이어 발광소자 및 그 제조방법
JP2005302980A (ja) * 2004-04-12 2005-10-27 Rohm Co Ltd 窒化物系半導体発光素子及びその製造方法
EP1735838B1 (de) * 2004-04-15 2011-10-05 Trustees of Boston University Optische bauelemente mit texturierten halbleiterschichten
US7442964B2 (en) * 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
KR100649494B1 (ko) 2004-08-17 2006-11-24 삼성전기주식회사 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드
TWI500072B (zh) * 2004-08-31 2015-09-11 學校法人上智學院 發光元件之製造方法
US7633097B2 (en) 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
WO2006060599A2 (en) 2004-12-02 2006-06-08 The Regents Of The University Of California Semiconductor devices based on coalesced nano-rod arrays
KR100580751B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
KR100669142B1 (ko) * 2005-04-20 2007-01-15 (주)더리즈 발광 소자와 이의 제조 방법
US8163575B2 (en) * 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
KR100896576B1 (ko) * 2006-02-24 2009-05-07 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
US20080149946A1 (en) * 2006-12-22 2008-06-26 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light

Also Published As

Publication number Publication date
BRPI0720931B1 (pt) 2018-12-11
RU2009128232A (ru) 2011-01-27
BRPI0720931A2 (pt) 2014-03-11
KR101484467B1 (ko) 2015-01-20
JP2010514191A (ja) 2010-04-30
JP5726255B2 (ja) 2015-05-27
EP2095436A2 (de) 2009-09-02
US20080149942A1 (en) 2008-06-26
JP2014057076A (ja) 2014-03-27
TWI520371B (zh) 2016-02-01
RU2012103169A (ru) 2013-08-10
CN101601140B (zh) 2012-11-14
KR101445810B1 (ko) 2014-10-01
ES2377487T3 (es) 2012-03-28
TW201535780A (zh) 2015-09-16
EP2095436B1 (de) 2011-11-23
JP5420419B2 (ja) 2014-02-19
WO2008078298A3 (en) 2008-08-21
US7663148B2 (en) 2010-02-16
RU2591246C2 (ru) 2016-07-20
KR20140036022A (ko) 2014-03-24
KR20090095656A (ko) 2009-09-09
TW200843150A (en) 2008-11-01
WO2008078298A2 (en) 2008-07-03
CN101601140A (zh) 2009-12-09
RU2457581C2 (ru) 2012-07-27

Similar Documents

Publication Publication Date Title
ATE535027T1 (de) Lichtemittierende iii-nitrid-vorrichtung mit spannungsreduzierter lichtemittierender schicht
ATE489733T1 (de) Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement
TW200742126A (en) Semiconductor light emitting device and its manufacturing method
WO2008127460A3 (en) Light-emitting device having semiconductor nanocrystal complexes
WO2013016631A3 (en) Method and system for flexible illuminated devices having edge lighting utilizing light active sheet material with integrated light emitting diode
WO2012059862A3 (en) Light emitting device with improved extraction efficiency
WO2013111542A9 (ja) 窒化物半導体発光装置
EP2731150A3 (de) Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
TW200610192A (en) Group III nitride semiconductor crystal and manufacturing method of the same, group III nitride semiconductor device and manufacturing method of the same, and light emitting device
TW200623464A (en) High efficiency group III nitride led with lenticular surface
TW200802996A (en) Semiconductor device and method of manufacturing semiconductor device
EP4106502A3 (de) Filament einer lichtemittierenden vorrichtung
WO2009119038A3 (en) Molded resin product, semiconductor light-emitting source, lighting device, and method for manufacturing molded resin product
WO2008112064A3 (en) Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
EP2369648A3 (de) Lichtemittierende Vorrichtung
DE602007006952D1 (de) Lichtemittierende vorrichtung mit mindestens einem keramischen sphärischen farbwandlermaterial
EP2530746A3 (de) Wachstumssubstrat und lichtemittierende Vorrichtung
TW200729543A (en) Light emitting device and method of forming the same
EP1922790A4 (de) Geschichtete halbleiterstruktur und verfahren zu ihrer bildung und leuchtbauelement
WO2009120975A3 (en) Superlattice free ultraviolet emitter
EP1653522A3 (de) Licht emittierendes Halbleiter-Bauelement mit Schichten mit Zusammensetzungsgradient.
MY183934A (en) Light emitting diode and fabrication method thereof
ATE499709T1 (de) Lichtemittierendes halbleiterbauelement
ATE542243T1 (de) Lichtemittierende vorrichtung
RU2014142050A (ru) Светоизлучающее устройство, выращенное на кремниевой подложке