ATE489733T1 - Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement - Google Patents

Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement

Info

Publication number
ATE489733T1
ATE489733T1 AT07859486T AT07859486T ATE489733T1 AT E489733 T1 ATE489733 T1 AT E489733T1 AT 07859486 T AT07859486 T AT 07859486T AT 07859486 T AT07859486 T AT 07859486T AT E489733 T1 ATE489733 T1 AT E489733T1
Authority
AT
Austria
Prior art keywords
layer
light emitting
strain
relieved
light
Prior art date
Application number
AT07859486T
Other languages
English (en)
Inventor
James C Kim
Sungsoo Yi
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE489733T1 publication Critical patent/ATE489733T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
AT07859486T 2006-12-22 2007-12-20 Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement ATE489733T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/615,601 US20080149946A1 (en) 2006-12-22 2006-12-22 Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
PCT/IB2007/055262 WO2008078297A2 (en) 2006-12-22 2007-12-20 Semiconductor light emitting device configured to emit multiple wavelengths of light

Publications (1)

Publication Number Publication Date
ATE489733T1 true ATE489733T1 (de) 2010-12-15

Family

ID=39387249

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07859486T ATE489733T1 (de) 2006-12-22 2007-12-20 Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement

Country Status (11)

Country Link
US (3) US20080149946A1 (de)
EP (1) EP2095435B1 (de)
JP (1) JP5189106B2 (de)
KR (1) KR101358701B1 (de)
CN (1) CN101675534B (de)
AT (1) ATE489733T1 (de)
BR (1) BRPI0721111A2 (de)
DE (1) DE602007010827D1 (de)
RU (1) RU2009128240A (de)
TW (1) TWI536599B (de)
WO (1) WO2008078297A2 (de)

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KR101591991B1 (ko) * 2010-12-02 2016-02-05 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
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US9653286B2 (en) 2012-02-14 2017-05-16 Hexagem Ab Gallium nitride nanowire based electronics
CN103367560B (zh) * 2012-03-30 2016-08-10 清华大学 发光二极管的制备方法
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CN103367585B (zh) 2012-03-30 2016-04-13 清华大学 发光二极管
CN103367584B (zh) 2012-03-30 2017-04-05 清华大学 发光二极管及光学元件
JP6227128B2 (ja) * 2013-06-07 2017-11-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
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Also Published As

Publication number Publication date
US20100264454A1 (en) 2010-10-21
EP2095435B1 (de) 2010-11-24
WO2008078297A3 (en) 2008-10-23
JP5189106B2 (ja) 2013-04-24
EP2095435A2 (de) 2009-09-02
KR101358701B1 (ko) 2014-02-07
US9911896B2 (en) 2018-03-06
JP2010514190A (ja) 2010-04-30
US20080149946A1 (en) 2008-06-26
CN101675534A (zh) 2010-03-17
KR20090094162A (ko) 2009-09-03
TW200843148A (en) 2008-11-01
BRPI0721111A2 (pt) 2014-03-04
US10312404B2 (en) 2019-06-04
TWI536599B (zh) 2016-06-01
US20180175236A1 (en) 2018-06-21
RU2009128240A (ru) 2011-01-27
DE602007010827D1 (de) 2011-01-05
CN101675534B (zh) 2012-09-05
WO2008078297A2 (en) 2008-07-03

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