DE602007010827D1 - Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement - Google Patents

Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement

Info

Publication number
DE602007010827D1
DE602007010827D1 DE602007010827T DE602007010827T DE602007010827D1 DE 602007010827 D1 DE602007010827 D1 DE 602007010827D1 DE 602007010827 T DE602007010827 T DE 602007010827T DE 602007010827 T DE602007010827 T DE 602007010827T DE 602007010827 D1 DE602007010827 D1 DE 602007010827D1
Authority
DE
Germany
Prior art keywords
layer
luminaire
light emitting
strain
relieved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007010827T
Other languages
English (en)
Inventor
James C Kim
Sungsoo Yi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Lumileds LLC
Original Assignee
Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Lumileds Lighing Co LLC filed Critical Koninklijke Philips Electronics NV
Publication of DE602007010827D1 publication Critical patent/DE602007010827D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
DE602007010827T 2006-12-22 2007-12-20 Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement Active DE602007010827D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/615,601 US20080149946A1 (en) 2006-12-22 2006-12-22 Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
PCT/IB2007/055262 WO2008078297A2 (en) 2006-12-22 2007-12-20 Semiconductor light emitting device configured to emit multiple wavelengths of light

Publications (1)

Publication Number Publication Date
DE602007010827D1 true DE602007010827D1 (de) 2011-01-05

Family

ID=39387249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007010827T Active DE602007010827D1 (de) 2006-12-22 2007-12-20 Zum emittieren mehrerer lichtwellenlängen ausgelegtes halbleiter-leuchtbauelement

Country Status (11)

Country Link
US (3) US20080149946A1 (de)
EP (1) EP2095435B1 (de)
JP (1) JP5189106B2 (de)
KR (1) KR101358701B1 (de)
CN (1) CN101675534B (de)
AT (1) ATE489733T1 (de)
BR (1) BRPI0721111A2 (de)
DE (1) DE602007010827D1 (de)
RU (1) RU2009128240A (de)
TW (1) TWI536599B (de)
WO (1) WO2008078297A2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007102781A1 (en) * 2006-03-08 2007-09-13 Qunano Ab Method for metal-free synthesis of epitaxial semiconductor nanowires on si
EP2126986B1 (de) * 2006-12-22 2019-09-18 QuNano AB Led mit aufrechter nanodrahtstruktur und herstellungsverfahren dafür
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
US8183587B2 (en) * 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
WO2008079078A1 (en) * 2006-12-22 2008-07-03 Qunano Ab Elevated led and method of producing such
AU2008203934C1 (en) * 2007-01-12 2014-03-13 Qunano Ab Nitride nanowires and method of producing such
DE102008035784A1 (de) 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
JP5211352B2 (ja) * 2008-10-17 2013-06-12 国立大学法人北海道大学 半導体発光素子アレー、およびその製造方法
US20110079766A1 (en) * 2009-10-01 2011-04-07 Isaac Harshman Wildeson Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate
US8692261B2 (en) * 2010-05-19 2014-04-08 Koninklijke Philips N.V. Light emitting device grown on a relaxed layer
KR20110131801A (ko) * 2010-05-31 2011-12-07 삼성전자주식회사 발광 소자 및 다중 파장의 광을 만드는 방법
JP5390472B2 (ja) * 2010-06-03 2014-01-15 株式会社東芝 半導体発光装置及びその製造方法
CN103155183B (zh) * 2010-10-12 2016-10-05 皇家飞利浦电子股份有限公司 具有减小的外延应力的发光器件
CN102054916B (zh) * 2010-10-29 2012-11-28 厦门市三安光电科技有限公司 反射器及其制作方法，以及包含该反射器的发光器件
US8969890B2 (en) 2010-11-04 2015-03-03 Koninklijke Philips N.V. Solid state light emitting devices based on crystallographically relaxed structures
KR101591991B1 (ko) * 2010-12-02 2016-02-05 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
EP2509120A1 (de) 2011-04-05 2012-10-10 Imec Halbleiterbauelement und -verfahren
EP2815423B1 (de) 2012-02-14 2017-05-24 Hexagem AB Galliumnitrid-nanodraht basierte elektronik
CN103367585B (zh) * 2012-03-30 2016-04-13 清华大学 发光二极管
CN103367560B (zh) * 2012-03-30 2016-08-10 清华大学 发光二极管的制备方法
CN103367584B (zh) 2012-03-30 2017-04-05 清华大学 发光二极管及光学元件
CN103367383B (zh) 2012-03-30 2016-04-13 清华大学 发光二极管
EP3005429B1 (de) 2013-06-07 2020-05-27 Glo Ab Mehrfarbige led und verfahren zur herstellung davon
US10483319B2 (en) 2014-08-08 2019-11-19 Glo Ab Pixilated display device based upon nanowire LEDs and method for making the same
KR102227771B1 (ko) 2014-08-25 2021-03-16 삼성전자주식회사 나노구조 반도체 발광소자
WO2016049507A1 (en) 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
JP2016081562A (ja) 2014-10-09 2016-05-16 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
KR20180133436A (ko) * 2016-05-04 2018-12-14 글로 에이비 상이한 색상의 led를 포함하는 일체형 다색 직시형 디스플레이와 이의 제조 방법

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
DE69637304T2 (de) * 1995-03-17 2008-08-07 Toyoda Gosei Co., Ltd. Lichtemittierende Halbleitervorrichtung bestehend aus einer III-V Nitridverbindung
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
JP4032264B2 (ja) * 1997-03-21 2008-01-16 ソニー株式会社 量子細線を有する素子の製造方法
US6542526B1 (en) * 1996-10-30 2003-04-01 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
US5795798A (en) * 1996-11-27 1998-08-18 The Regents Of The University Of California Method of making full color monolithic gan based leds
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
US6534791B1 (en) * 1998-11-27 2003-03-18 Lumileds Lighting U.S., Llc Epitaxial aluminium-gallium nitride semiconductor substrate
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
NO20014399L (no) * 2000-11-29 2002-05-30 Hewlett Packard Co En datastruktur og lagrings- og hentemetode som stötter ordinal-tallbasert datasöking og henting
KR20040029301A (ko) 2001-08-22 2004-04-06 소니 가부시끼 가이샤 질화물 반도체소자 및 질화물 반도체소자의 제조방법
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
JP4701161B2 (ja) * 2003-04-04 2011-06-15 キューナノ エービー 正確に位置決めされたナノウィスカおよびナノウィスカアレイ、およびそれらを作成する方法
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US6995389B2 (en) * 2003-06-18 2006-02-07 Lumileds Lighting, U.S., Llc Heterostructures for III-nitride light emitting devices
DE10327733C5 (de) * 2003-06-18 2012-04-19 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung eines Lichtstrahls
KR100525545B1 (ko) * 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR101183776B1 (ko) 2003-08-19 2012-09-17 니치아 카가쿠 고교 가부시키가이샤 반도체 소자
JP4457609B2 (ja) * 2003-08-26 2010-04-28 豊田合成株式会社 窒化ガリウム（ＧａＮ）の製造方法
US7122827B2 (en) * 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
KR100641989B1 (ko) * 2003-10-15 2006-11-02 엘지이노텍 주식회사 질화물 반도체 발광소자
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
CN1910763A (zh) 2004-01-23 2007-02-07 Hoya株式会社 量子点分散发光元件及其制造方法
US7132677B2 (en) * 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US20050225222A1 (en) * 2004-04-09 2005-10-13 Joseph Mazzochette Light emitting diode arrays with improved light extraction
US7777241B2 (en) * 2004-04-15 2010-08-17 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
US8035113B2 (en) * 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
TWI433343B (zh) 2004-06-22 2014-04-01 Verticle Inc 具有改良光輸出的垂直構造半導體裝置
KR100649494B1 (ko) * 2004-08-17 2006-11-24 삼성전기주식회사 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드
US7633097B2 (en) * 2004-09-23 2009-12-15 Philips Lumileds Lighting Company, Llc Growth of III-nitride light emitting devices on textured substrates
WO2006060599A2 (en) 2004-12-02 2006-06-08 The Regents Of The University Of California Semiconductor devices based on coalesced nano-rod arrays
DE102004062799A1 (de) * 2004-12-20 2006-06-29 Ensinger Kunststofftechnologie GbR (vertretungsberechtigter Gesellschafter Wilfried Ensinger, 71154 Nufringen) Kunststoffmaterial zur Herstellung von Halteringen
KR100580751B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7804100B2 (en) 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
KR100631980B1 (ko) 2005-04-06 2006-10-11 삼성전기주식회사 질화물 반도체 소자
US20070243703A1 (en) * 2006-04-14 2007-10-18 Aonex Technololgies, Inc. Processes and structures for epitaxial growth on laminate substrates
WO2010002004A1 (ja) * 2008-07-04 2010-01-07 保土谷化学工業株式会社 炭素繊維及び複合材料

Also Published As

Publication number Publication date
KR101358701B1 (ko) 2014-02-07
WO2008078297A3 (en) 2008-10-23
TW200843148A (en) 2008-11-01
EP2095435A2 (de) 2009-09-02
US9911896B2 (en) 2018-03-06
US20080149946A1 (en) 2008-06-26
ATE489733T1 (de) 2010-12-15
CN101675534A (zh) 2010-03-17
KR20090094162A (ko) 2009-09-03
US20100264454A1 (en) 2010-10-21
TWI536599B (zh) 2016-06-01
JP5189106B2 (ja) 2013-04-24
RU2009128240A (ru) 2011-01-27
EP2095435B1 (de) 2010-11-24
BRPI0721111A2 (pt) 2014-03-04
CN101675534B (zh) 2012-09-05
US20180175236A1 (en) 2018-06-21
JP2010514190A (ja) 2010-04-30
WO2008078297A2 (en) 2008-07-03
US10312404B2 (en) 2019-06-04

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