ATE499709T1 - Lichtemittierendes halbleiterbauelement - Google Patents

Lichtemittierendes halbleiterbauelement

Info

Publication number
ATE499709T1
ATE499709T1 AT09180801T AT09180801T ATE499709T1 AT E499709 T1 ATE499709 T1 AT E499709T1 AT 09180801 T AT09180801 T AT 09180801T AT 09180801 T AT09180801 T AT 09180801T AT E499709 T1 ATE499709 T1 AT E499709T1
Authority
AT
Austria
Prior art keywords
light
semiconductor component
emitting semiconductor
layer
light emitting
Prior art date
Application number
AT09180801T
Other languages
English (en)
Inventor
Kyun Shim Sang
Original Assignee
Lg Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co Ltd filed Critical Lg Innotek Co Ltd
Application granted granted Critical
Publication of ATE499709T1 publication Critical patent/ATE499709T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
AT09180801T 2008-12-26 2009-12-28 Lichtemittierendes halbleiterbauelement ATE499709T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080134303A KR101047761B1 (ko) 2008-12-26 2008-12-26 반도체 발광소자

Publications (1)

Publication Number Publication Date
ATE499709T1 true ATE499709T1 (de) 2011-03-15

Family

ID=41652954

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09180801T ATE499709T1 (de) 2008-12-26 2009-12-28 Lichtemittierendes halbleiterbauelement

Country Status (6)

Country Link
US (1) US8110850B2 (de)
EP (1) EP2202811B1 (de)
KR (1) KR101047761B1 (de)
CN (1) CN101771123B (de)
AT (1) ATE499709T1 (de)
DE (1) DE602009000785D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101053115B1 (ko) * 2011-02-28 2011-08-01 박건 결정성 및 휘도가 우수한 질화물계 발광소자 및 그 제조 방법
KR101053114B1 (ko) * 2011-02-28 2011-08-01 박건 ＧａＮ 파우더 제조 방법 및 그 방법으로 제조된 ＧａＮ 파우더를 이용한 질화물계 발광소자
KR101872735B1 (ko) * 2011-11-15 2018-08-02 엘지이노텍 주식회사 발광소자 패키지
KR20150039518A (ko) 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자
CN103510059B (zh) * 2013-10-21 2016-08-17 研创应用材料（赣州）股份有限公司 一种制备新型铜合金保护层材料及薄膜迭层的方法
KR20150111550A (ko) 2014-03-25 2015-10-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN112968100A (zh) * 2020-08-14 2021-06-15 重庆康佳光电技术研究院有限公司 一种发光器件、制备方法及电子设备
TWI792283B (zh) 2021-04-27 2023-02-11 錼創顯示科技股份有限公司 微型發光二極體結構與使用其的微型發光二極體顯示面板
CN113193090B (zh) * 2021-04-27 2023-06-06 錼创显示科技股份有限公司 微型发光二极管结构与使用其的微型发光二极管显示面板

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
JP2005216598A (ja) 2004-01-28 2005-08-11 Nissan Motor Co Ltd 固体高分子膜型燃料電池セルおよびその製造方法
JP2005244201A (ja) 2004-01-28 2005-09-08 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
KR100618288B1 (ko) * 2005-03-21 2006-08-31 주식회사 이츠웰 터널링 층위에 제1 오믹 전극을 형성한 질화물 반도체 발광다이오드
KR100862516B1 (ko) * 2005-06-02 2008-10-08 삼성전기주식회사 발광 다이오드
JP4670489B2 (ja) * 2005-06-06 2011-04-13 日立電線株式会社 発光ダイオード及びその製造方法
US20070018186A1 (en) * 2005-07-19 2007-01-25 Lg Chem, Ltd. Light emitting diode device having advanced light extraction efficiency and preparation method thereof
KR20070011041A (ko) * 2005-07-19 2007-01-24 주식회사 엘지화학 광추출 효율을 높인 발광다이오드 소자 및 이의 제조방법
JP2007266356A (ja) 2006-03-29 2007-10-11 Kyocera Corp 発光装置およびそれを用いた照明装置
US20080008964A1 (en) * 2006-07-05 2008-01-10 Chia-Hua Chan Light emitting diode and method of fabricating a nano/micro structure
KR100820546B1 (ko) * 2006-09-07 2008-04-07 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR101283261B1 (ko) * 2007-05-21 2013-07-11 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TWI338387B (en) * 2007-05-28 2011-03-01 Delta Electronics Inc Current spreading layer with micro/nano structure, light-emitting diode apparatus and its manufacturing method

Also Published As

Publication number Publication date
US8110850B2 (en) 2012-02-07
DE602009000785D1 (de) 2011-04-07
EP2202811B1 (de) 2011-02-23
CN101771123A (zh) 2010-07-07
KR20100076297A (ko) 2010-07-06
CN101771123B (zh) 2013-01-30
EP2202811A1 (de) 2010-06-30
KR101047761B1 (ko) 2011-07-07
US20100163903A1 (en) 2010-07-01

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