RU2014142050A - Светоизлучающее устройство, выращенное на кремниевой подложке - Google Patents

Светоизлучающее устройство, выращенное на кремниевой подложке Download PDF

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RU2014142050A
RU2014142050A RU2014142050A RU2014142050A RU2014142050A RU 2014142050 A RU2014142050 A RU 2014142050A RU 2014142050 A RU2014142050 A RU 2014142050A RU 2014142050 A RU2014142050 A RU 2014142050A RU 2014142050 A RU2014142050 A RU 2014142050A
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Раджвиндер СИНГХ
Джон Эдвард ЭПЛЕР
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Конинклейке Филипс Н.В.
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Abstract

1. Устройство, содержащее:полупроводниковую структуру, включающую в себя:III-нитридный светоизлучающий слой, размещенный между областью n-типа и областью p-типа; иалюминийсодержащие слои, AlGaN-слой, расположенный на области n-типа, и AlN-слой, расположенный на AlGaN-слое;прозрачный материал, расположенный на AlN-слое.2. Устройство по п. 1, в котором поверхность прозрачного материала снабжена рисунком.3. Устройство по п. 1, в котором поверхность прозрачного материала структурирована.4. Устройство по п. 1, в котором поверхность пропускающего свет материала выполнена шероховатой.5. Устройство по п. 1, в котором граница раздела, расположенная между алюминийсодержащими слоями и светоизлучающей областью, неплоская.6. Устройство по п. 5, в котором неплоская граница раздела является границей раздела между AlGaN-слоем и областью n-типа.7. Устройство по п. 1, дополнительно включающее в себя пористый полупроводниковый слой, расположенный между алюминийсодержащими слоями и III-нитридным светоизлучающим слоем.8. Устройство, содержащее:полупроводниковую структуру, которая включает в себя:III-нитридный светоизлучающий слой, расположенный между областью n-типа и областью p-типа; иалюминийсодержащий слой; инепрерывную пористую III-нитридную область, расположенную между алюминийсодержащим слоем и III-нитридным светоизлучающим слоем.9. Устройство по п. 8, в котором пористым III-нитридным слоем является GaN, и полупроводниковая структура выращена на кремниевой подложке.10. Устройство по п. 8, в котором алюминийсодержащим слоем являются AlGaN-слой, расположенный на области n-типа, и AlN-слой, расположенный на AlGaN-слое.11. Устройство по п. 8, дополнительно включающее в себя прозрачный материал, расположенный на алюминийсодержащем сло

Claims (15)

1. Устройство, содержащее:
полупроводниковую структуру, включающую в себя:
III-нитридный светоизлучающий слой, размещенный между областью n-типа и областью p-типа; и
алюминийсодержащие слои, AlGaN-слой, расположенный на области n-типа, и AlN-слой, расположенный на AlGaN-слое;
прозрачный материал, расположенный на AlN-слое.
2. Устройство по п. 1, в котором поверхность прозрачного материала снабжена рисунком.
3. Устройство по п. 1, в котором поверхность прозрачного материала структурирована.
4. Устройство по п. 1, в котором поверхность пропускающего свет материала выполнена шероховатой.
5. Устройство по п. 1, в котором граница раздела, расположенная между алюминийсодержащими слоями и светоизлучающей областью, неплоская.
6. Устройство по п. 5, в котором неплоская граница раздела является границей раздела между AlGaN-слоем и областью n-типа.
7. Устройство по п. 1, дополнительно включающее в себя пористый полупроводниковый слой, расположенный между алюминийсодержащими слоями и III-нитридным светоизлучающим слоем.
8. Устройство, содержащее:
полупроводниковую структуру, которая включает в себя:
III-нитридный светоизлучающий слой, расположенный между областью n-типа и областью p-типа; и
алюминийсодержащий слой; и
непрерывную пористую III-нитридную область, расположенную между алюминийсодержащим слоем и III-нитридным светоизлучающим слоем.
9. Устройство по п. 8, в котором пористым III-нитридным слоем является GaN, и полупроводниковая структура выращена на кремниевой подложке.
10. Устройство по п. 8, в котором алюминийсодержащим слоем являются AlGaN-слой, расположенный на области n-типа, и AlN-слой, расположенный на AlGaN-слое.
11. Устройство по п. 8, дополнительно включающее в себя прозрачный материал, расположенный на алюминийсодержащем слое.
12. Устройство по п. 11, в котором поверхность прозрачного материала снабжена рисунком.
13. Устройство по п. 11, в котором поверхность прозрачного материала структурирована.
14. Устройство по п. 11, в котором поверхность прозрачного материала выполнена шероховатой.
15. Устройство по п. 1, в котором граница раздела, расположенная между алюминийсодержащими слоями и светоизлучающей областью, является неплоской.
RU2014142050A 2012-03-19 2013-03-18 Светоизлучающее устройство, выращенное на кремниевой подложке RU2657335C2 (ru)

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US201261612536P 2012-03-19 2012-03-19
US61/612,536 2012-03-19
PCT/IB2013/052137 WO2013140320A1 (en) 2012-03-19 2013-03-18 Light emitting device grown on a silicon substrate

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EP2828899B1 (en) 2018-12-26
TW201349574A (zh) 2013-12-01
TW201735398A (zh) 2017-10-01
TWI594457B (zh) 2017-08-01
US20150084058A1 (en) 2015-03-26
KR20140144228A (ko) 2014-12-18
CN104205369A (zh) 2014-12-10
JP6574130B2 (ja) 2019-09-11
KR102116152B1 (ko) 2020-05-28
JP2019004164A (ja) 2019-01-10
RU2657335C2 (ru) 2018-06-13
CN110246941A (zh) 2019-09-17
JP2015514312A (ja) 2015-05-18
WO2013140320A1 (en) 2013-09-26

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