JP2019004164A - シリコン基板上に成長される発光デバイス - Google Patents
シリコン基板上に成長される発光デバイス Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 30
- 150000004767 nitrides Chemical class 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 21
- 229910002704 AlGaN Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 12
- 239000012780 transparent material Substances 0.000 abstract description 26
- 238000000605 extraction Methods 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- -1 thicknesses Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H01L33/26—Materials of the light emitting region
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Abstract
Description
(1) n型領域とp型領域との間に配置されたIII族窒化物発光層と、
アルミニウム含有層と、
を有する半導体構造体であって、前記アルミニウム含有層が該半導体構造体の上面を有する当該半導体構造体と、
前記アルミニウム含有層上に配置され、且つ、表面がテクスチャ化された透明材料とを有する、
デバイス。
(2) 前記アルミニウム含有層がAlNである、(1)に記載のデバイス。
(3) 前記n型領域が前記アルミニウム含有層と前記III族窒化物発光層との間に配置される、(1)に記載のデバイス。
(4) 前記透明材料が少なくとも2.0の屈折率を有する、(1)に記載のデバイス。
(5) 前記透明材料がシリコンの酸化物を有する、(1)に記載のデバイス。
(6) 前記透明材料がシリコンの窒化物を有する、(1)に記載のデバイス。
(7) 前記透明材料の前記表面が粗面化、テクスチャ化又はパターン化されている、(1)に記載のデバイス。
(8) 前記アルミニウム含有層と前記発光層との間に配置された界面が非平坦である、(1)に記載のデバイス。
(9) 前記非平坦な界面が、AlGaN層と前記n型領域の一部であるGaN層との間の界面である、(8)に記載のデバイス。
(10) 前記アルミニウム含有層と前記III族窒化物発光層との間に配置された多孔性半導体層を更に有する、(1)に記載のデバイス。
(11) シリコンを有する基板上に半導体構造体を成長させるステップであって、前記半導体構造体が、
前記基板に直接接触するアルミニウム含有層と、
n型領域とp型領域との間に配置されたIII族窒化物発光層と、
を有するステップと、
前記基板を除去するステップと、
前記基板を除去した後に、前記アルミニウム含有層に直接接触する透明材料を形成するステップと、
前記透明材料をテクスチャ化するステップと、
を有する、方法。
(12) 前記基板がシリコン層を有する、(11)に記載の方法。
(13) 前記アルミニウム含有層がAlNである、(11)に記載の方法。
(14) 前記透明材料が少なくとも2.0の屈折率を有する、(11)に記載の方法。
(15) 前記透明材料が化学気相成長により形成される、(11)に記載の方法。
(16) 前記透明材料が非III族窒化物材料である、(11)に記載の方法。
(17) 前記アルミニウム含有層を成長させた後に、前記半導体構造体上に非平坦な表面を形成するステップ、及び
前記非平坦な表面を形成した後に、前記n型領域と前記p型領域との間に配置される前記III族窒化物発光層を成長させるステップ、
を更に有する、(11)に記載の方法。
(18) 前記アルミニウム含有層を成長させた後に、多孔性GaN層を形成するステップと、
前記多孔性GaN層を形成した後に、前記n型領域と前記p型領域との間に配置される前記III族窒化物発光層を成長させるステップと、
を更に有する、(11)に記載の方法。
(19) n型領域とp型領域との間に配置されたIII族窒化物発光層と、
アルミニウム含有層と、
前記アルミニウム含有層と前記III族窒化物発光層との間に配置された多孔性III族窒化物領域と、
を有する半導体構造体を有する、デバイス。
(20) 前記多孔性III族窒化物領域がGaNであり、前記半導体構造体がシリコン基板上に成長されている、(19)に記載のデバイス。
Claims (12)
- 発光デバイスであって、
半導体構造体であり、
n型領域とp型領域との間に配置されたIII族窒化物発光層と、
前記n型領域に隣接したAlGaN層と、該AlGaN層と直接接触したAlN層とを含み、前記半導体構造体の第1の表面を形成するアルミニウム含有層であり、前記n型領域内に圧縮応力を生成するようにされたアルミニウム含有層と、
を有する半導体構造体と、
前記半導体構造体の前記第1の表面とは反対側の前記半導体構造体の第2の表面で前記n型領域上に配置された金属nコンタクト、及び前記半導体構造体の前記第2の表面で前記p型領域上に配置された金属pコンタクトと、
前記AlN層の表面上に化学気相成長を用いて堆積された、シリコンの酸化物、シリコンの窒化物、シリコンの酸窒化物、又は、シリコンの酸化物とシリコンの窒化物とシリコンの酸窒化物とのうちの少なくとも1つの混合物、のうちの1つを有する光学的に透明な薄膜であり、前記AlN層と接触した表面とは反対側の当該光学的に透明な薄膜の表面が、粗面化、テクスチャ化又はパターン化のうちの1つをされている、光学的に透明な層と、
を有する発光デバイス。 - 前記光学的に透明な薄膜は、1.9と2.2との間の屈折率を有する、請求項1に記載の発光デバイス。
- 前記AlN層と直接接触した表面とは反対側の前記光学的に透明な薄膜の表面と直接接触して配置された波長変換材料、を更に有する請求項1に記載の発光デバイス。
- 前記AlN層と直接接触した表面とは反対側の前記光学的に透明な薄膜の表面は、当該発光デバイスの最も外側の表面である、請求項1に記載の発光デバイス。
- 前記光学的に透明な薄膜は非導電性である、請求項1に記載の発光デバイス。
- 前記多孔性III族窒化物領域はGaNであり、前記半導体構造体はシリコン基板上に成長されている、請求項1に記載の発光デバイス。
- 発光デバイスを製造する方法であって、
シリコン基板上にAlNシード層を成長させ、
前記AlNシード層上にAlGaNバッファ層を成長させ、
前記AlGaNバッファ層の上にn型層を成長させ、
前記n型層上にIII族窒化物発光層を成長させ、
前記III族窒化物発光層上にp型層を成長させ、
前記シリコン基板を除去し、
前記シリコン基板を除去した後に、化学気相成長を用いて前記AlNシード層の表面上に光学的に透明な薄膜を堆積させ、該光学的に透明な薄膜は、シリコンの酸化物、シリコンの窒化物、シリコンの酸窒化物、又は、シリコンの酸化物とシリコンの窒化物とシリコンの酸窒化物とのうちの少なくとも1つの混合物、のうちの1つを有し、且つ
前記AlNシード層と接触した表面とは反対側の前記光学的に透明な薄膜の表面をテクスチャ化する、
ことを有する方法。 - 前記AlNシード層は、100nm未満の厚さであり、GaNの成長温度よりも低い温度で堆積される、請求項7に記載の方法。
- 前記AlGaNバッファ層は、800℃よりも高い温度で成長される単結晶層である、請求項7に記載の方法。
- 前記光学的に透明な薄膜上に波長変換層を形成する、ことを更に有する請求項7に記載の方法。
- 前記光学的に透明な薄膜は、1.9と2.2との間の屈折率を有する、請求項7に記載の方法。
- 前記光学的に透明な薄膜の前記テクスチャ化される表面は、前記発光デバイスの最も外側の表面である、請求項7に記載の方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11095096B2 (en) | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
CN107078190B (zh) | 2014-09-30 | 2020-09-08 | 耶鲁大学 | 用于GaN垂直微腔面发射激光器(VCSEL)的方法 |
US11018231B2 (en) | 2014-12-01 | 2021-05-25 | Yale University | Method to make buried, highly conductive p-type III-nitride layers |
EP3298624B1 (en) * | 2015-05-19 | 2023-04-19 | Yale University | A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer |
US10096975B1 (en) | 2017-03-27 | 2018-10-09 | International Business Machines Corporation | Laterally grown edge emitting laser |
KR20220140749A (ko) * | 2020-01-22 | 2022-10-18 | 포로 테크놀로지스 리미티드 | 적색 led 및 제작 방법 |
GB2593693B (en) * | 2020-03-30 | 2022-08-03 | Plessey Semiconductors Ltd | LED precursor |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003234501A (ja) * | 2002-02-12 | 2003-08-22 | Sharp Corp | 半導体発光素子 |
JP2004511080A (ja) * | 1999-12-03 | 2004-04-08 | クリー インコーポレイテッド | 内部および外部光学要素による光取出しを向上させた発光ダイオード |
JP2005303285A (ja) * | 2004-03-18 | 2005-10-27 | Showa Denko Kk | Iii族窒化物半導体発光素子、その製造方法及びledランプ |
JP2007096130A (ja) * | 2005-09-29 | 2007-04-12 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP2007533164A (ja) * | 2004-04-15 | 2007-11-15 | トラスティーズ オブ ボストン ユニバーシティ | テクスチャ出しされた半導体層を特徴とする光学装置 |
JP2008117922A (ja) * | 2006-11-02 | 2008-05-22 | Yamaguchi Univ | 半導体発光素子及びその製造方法 |
JP2012031047A (ja) * | 2010-07-08 | 2012-02-16 | Ritsumeikan | 結晶成長方法および半導体素子 |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3325479B2 (ja) * | 1997-01-30 | 2002-09-17 | 株式会社東芝 | 化合物半導体素子及びその製造方法 |
US6266355B1 (en) * | 1997-09-12 | 2001-07-24 | Sdl, Inc. | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
JP2001223165A (ja) * | 2000-02-10 | 2001-08-17 | Hitachi Cable Ltd | 窒化物半導体及びその製造方法 |
JP2003218396A (ja) * | 2001-11-15 | 2003-07-31 | Mitsubishi Cable Ind Ltd | 紫外線発光素子 |
JP2003347601A (ja) * | 2002-05-28 | 2003-12-05 | Matsushita Electric Works Ltd | 発光ダイオード照明装置 |
JP4329374B2 (ja) * | 2002-07-29 | 2009-09-09 | パナソニック電工株式会社 | 発光素子およびその製造方法 |
JPWO2004042832A1 (ja) * | 2002-11-06 | 2006-03-09 | サンケン電気株式会社 | 半導体発光素子及びその製造方法 |
JP4590905B2 (ja) * | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
JP2005244201A (ja) * | 2004-01-28 | 2005-09-08 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
WO2005091390A1 (en) * | 2004-03-18 | 2005-09-29 | Showa Denko K.K. | Group iii nitride semiconductor light-emitting device and producing method thereof |
JP2006093602A (ja) * | 2004-09-27 | 2006-04-06 | Toyoda Gosei Co Ltd | 発光素子 |
JP4857596B2 (ja) * | 2004-06-24 | 2012-01-18 | 豊田合成株式会社 | 発光素子の製造方法 |
US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
KR100712753B1 (ko) * | 2005-03-09 | 2007-04-30 | 주식회사 실트론 | 화합물 반도체 장치 및 그 제조방법 |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
TWI270222B (en) * | 2005-10-07 | 2007-01-01 | Formosa Epitaxy Inc | Light emitting diode chip |
JP2007134388A (ja) * | 2005-11-08 | 2007-05-31 | Sharp Corp | 窒化物系半導体素子とその製造方法 |
US8729580B2 (en) * | 2005-12-06 | 2014-05-20 | Toshiba Techno Center, Inc. | Light emitter with metal-oxide coating |
JP2007266571A (ja) * | 2006-02-28 | 2007-10-11 | Mitsubishi Cable Ind Ltd | Ledチップ、その製造方法および発光装置 |
CN101043059A (zh) * | 2006-03-24 | 2007-09-26 | 中国科学院半导体研究所 | 采用衬底表面粗化技术的倒装结构发光二极管制作方法 |
JP2007329464A (ja) * | 2006-05-09 | 2007-12-20 | Mitsubishi Chemicals Corp | 半導体発光素子 |
TWI369009B (en) * | 2007-09-21 | 2012-07-21 | Nat Univ Chung Hsing | Light-emitting chip device with high thermal conductivity |
KR101404143B1 (ko) * | 2007-10-12 | 2014-06-05 | 에이전시 포 사이언스, 테크놀로지 앤드 리서치 | 인이 함유되지 않은 레드 및 화이트 질소 기반 led 제조 |
CN101257075B (zh) * | 2008-03-13 | 2010-05-12 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件及其制造方法 |
JP5164641B2 (ja) * | 2008-04-02 | 2013-03-21 | Dowaエレクトロニクス株式会社 | 電流狭窄型半導体発光素子の製造方法 |
JP4719244B2 (ja) * | 2008-04-25 | 2011-07-06 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
JP2009289947A (ja) * | 2008-05-29 | 2009-12-10 | Kyocera Corp | 発光素子及び照明装置 |
DE102008030584A1 (de) * | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
CN102067339B (zh) * | 2008-08-19 | 2013-03-06 | 晶能光电(江西)有限公司 | 一种制备具有金属衬底的InGaAlN发光二极管的方法 |
TWI401729B (zh) * | 2008-10-16 | 2013-07-11 | Advanced Optoelectronic Tech | 阻斷半導體差排缺陷之方法 |
WO2010056083A2 (ko) * | 2008-11-14 | 2010-05-20 | 삼성엘이디 주식회사 | 반도체 발광소자 |
JP5311408B2 (ja) * | 2008-12-26 | 2013-10-09 | シャープ株式会社 | 窒化物半導体発光素子 |
WO2010112980A1 (en) * | 2009-04-02 | 2010-10-07 | Philips Lumileds Lighting Company, Llc | Iii-nitride light emitting device including porous semiconductor layer |
JP5597933B2 (ja) * | 2009-05-01 | 2014-10-01 | 住友電気工業株式会社 | Iii族窒化物半導体層貼り合わせ基板およびその製造方法 |
JP2011082233A (ja) * | 2009-10-05 | 2011-04-21 | Hitachi Cable Ltd | 発光素子 |
KR101082788B1 (ko) * | 2009-10-16 | 2011-11-14 | 한국산업기술대학교산학협력단 | 다공성 질화물 반도체 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 |
CN102782818B (zh) * | 2010-01-27 | 2016-04-27 | 耶鲁大学 | 用于GaN装置的基于导电性的选择性蚀刻和其应用 |
US8642368B2 (en) * | 2010-03-12 | 2014-02-04 | Applied Materials, Inc. | Enhancement of LED light extraction with in-situ surface roughening |
US8692198B2 (en) * | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US8154052B2 (en) * | 2010-05-06 | 2012-04-10 | Koninklijke Philips Electronics N.V. | Light emitting device grown on wavelength converting substrate |
US8723201B2 (en) * | 2010-08-20 | 2014-05-13 | Invenlux Corporation | Light-emitting devices with substrate coated with optically denser material |
JP2012124306A (ja) * | 2010-12-08 | 2012-06-28 | Toyoda Gosei Co Ltd | 半導体発光素子 |
US20130026480A1 (en) * | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
US20130082274A1 (en) * | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
JP5803708B2 (ja) * | 2012-02-03 | 2015-11-04 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
US8946747B2 (en) * | 2012-02-13 | 2015-02-03 | Cree, Inc. | Lighting device including multiple encapsulant material layers |
-
2013
- 2013-03-18 CN CN201910406069.7A patent/CN110246941A/zh active Pending
- 2013-03-18 CN CN201380015388.6A patent/CN104205369A/zh active Pending
- 2013-03-18 JP JP2015501026A patent/JP6574130B2/ja active Active
- 2013-03-18 WO PCT/IB2013/052137 patent/WO2013140320A1/en active Application Filing
- 2013-03-18 KR KR1020147029213A patent/KR102116152B1/ko active IP Right Grant
- 2013-03-18 US US14/384,173 patent/US20150084058A1/en not_active Abandoned
- 2013-03-18 RU RU2014142050A patent/RU2657335C2/ru active
- 2013-03-18 EP EP13721400.3A patent/EP2828899B1/en active Active
- 2013-03-19 TW TW102109746A patent/TWI594457B/zh active
- 2013-03-19 TW TW106114060A patent/TW201735398A/zh unknown
-
2018
- 2018-08-10 JP JP2018150949A patent/JP2019004164A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004511080A (ja) * | 1999-12-03 | 2004-04-08 | クリー インコーポレイテッド | 内部および外部光学要素による光取出しを向上させた発光ダイオード |
JP2003234501A (ja) * | 2002-02-12 | 2003-08-22 | Sharp Corp | 半導体発光素子 |
JP2005303285A (ja) * | 2004-03-18 | 2005-10-27 | Showa Denko Kk | Iii族窒化物半導体発光素子、その製造方法及びledランプ |
JP2007533164A (ja) * | 2004-04-15 | 2007-11-15 | トラスティーズ オブ ボストン ユニバーシティ | テクスチャ出しされた半導体層を特徴とする光学装置 |
JP2007096130A (ja) * | 2005-09-29 | 2007-04-12 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP2008117922A (ja) * | 2006-11-02 | 2008-05-22 | Yamaguchi Univ | 半導体発光素子及びその製造方法 |
JP2012031047A (ja) * | 2010-07-08 | 2012-02-16 | Ritsumeikan | 結晶成長方法および半導体素子 |
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CN104205369A (zh) | 2014-12-10 |
TW201735398A (zh) | 2017-10-01 |
KR102116152B1 (ko) | 2020-05-28 |
RU2014142050A (ru) | 2016-05-20 |
TW201349574A (zh) | 2013-12-01 |
TWI594457B (zh) | 2017-08-01 |
EP2828899B1 (en) | 2018-12-26 |
CN110246941A (zh) | 2019-09-17 |
JP6574130B2 (ja) | 2019-09-11 |
KR20140144228A (ko) | 2014-12-18 |
US20150084058A1 (en) | 2015-03-26 |
WO2013140320A1 (en) | 2013-09-26 |
RU2657335C2 (ru) | 2018-06-13 |
EP2828899A1 (en) | 2015-01-28 |
JP2015514312A (ja) | 2015-05-18 |
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