TWI594457B - 在矽基板上成長的發光裝置 - Google Patents
在矽基板上成長的發光裝置 Download PDFInfo
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- TWI594457B TWI594457B TW102109746A TW102109746A TWI594457B TW I594457 B TWI594457 B TW I594457B TW 102109746 A TW102109746 A TW 102109746A TW 102109746 A TW102109746 A TW 102109746A TW I594457 B TWI594457 B TW I594457B
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- Prior art keywords
- layer
- aluminum
- type region
- iii nitride
- semiconductor structure
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- 239000000758 substrate Substances 0.000 title claims description 54
- 229910052710 silicon Inorganic materials 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 46
- 229910052782 aluminium Inorganic materials 0.000 claims description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 33
- 239000012780 transparent material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000002360 preparation method Methods 0.000 description 19
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005530 etching Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- -1 thicknesses Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/0093—Wafer bonding; Removal of the growth substrate
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Description
本發明係關於一種半導體發光裝置,諸如在一矽基板上成長之一III氮化物發光二極體。
半導體發光裝置(包含發光二極體(LED)、共振腔發光二極體(RCLED)、垂直腔雷射二極體(諸如表面發射雷射(VCSEL)及邊緣發射雷射))屬於當前可用之最高效光源之列。在製造能夠跨越可見光譜操作之高亮度發光裝置中當前所關注之材料系統包含III-V族半導體,尤其係鎵、鋁、硼、銦及氮之二元、三元及四元合金(亦稱為III氮化物材料)。通常,藉由以下操作來製作III氮化物發光裝置:藉由金屬有機化學汽相沈積(MOCVD)、分子束磊晶(MBE)或其他磊晶技術在一藍寶石、碳化矽、矽、III氮化物或其他適合基板上磊晶成長不同組合物及摻雜劑濃度之一半導體層堆疊。該堆疊通常包含形成於基板上方之摻雜有(舉例而言)Si之一或多個n型層、形成於該(等)n型層上方之一作用區域中之一或多個發光層及形成於該作用區域上方之摻雜有(舉例而言)Mg之一或多個p型層。在該等n及p型區域上形成有電觸點。
圖1圖解說明一覆晶LED,在US 7,256,483中更詳細地闡述了該覆晶LED。該LED包含在一藍寶石成長基板(未展示)上成長之若干n型層16、一作用層18及若干p型層20。在LED形成製程期間,在與p觸點金
屬24相同之側上,p層20及作用層18之部分被蝕除且金屬50(金屬化層加接合金屬)接觸n層16。一底填充材料52可沈積於LED下面之空隙中以減少跨越LED之熱梯度、將機械強度添加至LED與封裝基板之間的附接且防止污染物接觸LED材料。n金屬50及p金屬24分別接合至一封裝基板12上之墊22A及22B。封裝基板12上之接觸墊22A及22B使用導通體28A及28B及/或金屬跡線連接至可焊接電極26A及26B。移除成長基板,從而曝露n型層16之一表面。舉例而言,藉由使用一KOH溶液進行光電化學蝕刻將此表面粗糙化以達成增加之光提取。
本發明之一目標係提供一種在展現經改良光提取之一矽基板上成長之發光裝置。
本發明之實施例包含一半導體結構,該半導體結構包含:一III氮化物發光層,其安置於一n型區域與一p型區域之間;及一含鋁層。該含鋁層形成該半導體結構之頂部表面。一透明材料安置於該含鋁層上。該透明材料之一表面被紋理化。
一種根據本發明之實施例之方法包含在包含矽之一基板上成長一半導體結構。該半導體基板包含:一含鋁層,其與該基板直接接觸;及一III氮化物發光層,其安置於一n型區域與一p型區域之間。該方法進一步包含:移除該基板。在移除該基板之後,與該含鋁層直接接觸地形成一透明材料。紋理化該透明材料。
本發明之實施例包含一半導體結構,該半導體結構包含安置於一n型區域與一p型區域之間的一III氮化物發光層。該半導體結構進一步包含一含鋁層。一多孔III氮化物區域安置於該含鋁層與該III氮化物發光層之間。
12‧‧‧封裝基板
16‧‧‧n型層/n層
18‧‧‧作用層
20‧‧‧p型層/p層
22A‧‧‧墊/接觸墊
22B‧‧‧墊/接觸墊
24‧‧‧p觸點金屬/p金屬
26A‧‧‧可焊接電極
26B‧‧‧可焊接電極
28A‧‧‧導通體
28B‧‧‧導通體
30‧‧‧矽基板/基板/矽成長基板
32‧‧‧製備層/含鋁製備層/區域/半導體結構
34‧‧‧AlN晶種層/晶種層
36‧‧‧AlGaN緩衝層
38‧‧‧III氮化物裝置結構/裝置結構/區域/半導體結構
40‧‧‧n型區域
42‧‧‧發光區域/作用區域
44‧‧‧p型區域
46‧‧‧n觸點/觸點/金屬n觸點
47‧‧‧間隙
48‧‧‧p觸點/觸點/金屬p觸點
50‧‧‧金屬/支撐件/n金屬
52‧‧‧底填充材料/透明材料
54‧‧‧頂部表面/表面
56‧‧‧光學透明材料層/層/透明材料/Si3N4層/透明層
60‧‧‧多孔半導體材料區域/多孔區域
62‧‧‧III氮化物層
70‧‧‧波導中斷散射結構/散射結構
72‧‧‧散射結構
76‧‧‧孔/空氣空隙
78‧‧‧寬度
80‧‧‧半導體結構/晶圓/間距
81‧‧‧銀/銀區
82‧‧‧鐵氟龍表面/厚度
84‧‧‧清洗機
86‧‧‧螺栓
88‧‧‧鉑絲
90‧‧‧電力供應器
92‧‧‧氫氧化鈉或氫氧化鉀溶液
94‧‧‧紫外線照明
圖1圖解說明具有一經粗糙化頂部表面之一覆晶LED。
圖2圖解說明在一矽基板上成長之一III氮化物結構。
圖3圖解說明在一覆晶組態中附接至一支撐件的圖2之結構。
圖4圖解說明包含安置於圖3之半導體結構上之一經粗糙化透明材料之一裝置之頂部表面的一部分。
圖5圖解說明包含安置於製備層與一裝置結構之間的一多孔層之一半導體結構之一部分。
圖6圖解說明包含一波導中斷區域及一散射結構之一裝置。
圖7圖解說明孔在一多孔III氮化物層中之成長。
圖8圖解說明用於形成一多孔III氮化物層之一設備。
儘管下文之實例係指發藍色光或UV光之III氮化物LED,但除LED之外,本發明之實施例中亦可使用半導體發光裝置,諸如雷射二極體及由其他材料系統(諸如其他III-V材料、III磷化物及III砷化物材料)製成之半導體發光裝置。
III氮化物裝置通常在藍寶石或SiC基板上成長。如上文所闡述,可藉由蝕刻、雷射剝離或任何其他適合技術移除此等基板。藉由移除此等基板而曝露之III氮化物材料通常係GaN,GaN可(舉例而言)藉由光電化學蝕刻而容易地粗糙化。
矽由於其低成本、廣泛可用性及良好特性化之電及熱性質而係用於成長III氮化物裝置之一有吸引力基板。由於材料品質問題(包含因III氮化物材料與矽之間的晶格不匹配及熱不匹配導致之裂紋),矽尚未廣泛地用做用於成長III氮化物裝置之一基板。另外,Ga與Si之間的化學交互作用需要第一成長層基本上不含Ga。通常,將AlN用作第一成長層。AlN第一成長層在成長於AlN第一成長層上方之GaN層中誘發壓縮應變。在晶圓自高成長溫度冷卻期間,Si與GaN之間的熱膨脹之不匹配在GaN中誘發一拉伸應變。藉由在一壓縮狀態中在高溫下
成長而適應因冷卻產生之拉伸應變。
圖2圖解說明在一矽基板30上成長之一III氮化物結構。在本文中所闡述之實施例中,矽基板30可係一矽晶圓或一複合基板(諸如一絕緣體上矽基板),其中成長表面(亦即,頂部表面)係矽。為減少或消除與晶格及熱不匹配相關聯之問題,首先在矽基板30上成長一或多個製備層32。在圖2中,圖解說明兩個製備層:一AlN晶種層34及一AlGaN緩衝層36。AlN晶種層34可係(舉例而言)小於100nm厚且在低於GaN之成長溫度(其通常大於900℃)之一溫度下沈積之一AlN層。AlGaN緩衝層36可係(舉例而言)在一高溫(舉例而言,大於800℃)下成長之一實質上單晶層。AlGaN緩衝層36可在III氮化物裝置結構38中(尤其在可減少III氮化物裝置結構38中之裂紋之n型區域40中)產生壓縮應力。在某些實施例中,AlGaN緩衝層36被省略,且III氮化物裝置結構38在AlN晶種層34上直接成長。一III氮化物裝置結構38(包含一n型區域40、一發光區域42及一p型區域44)在製備層32上成長。下文更詳細地闡述III氮化物裝置結構38。
如上文所闡述,含鋁製備層32可減少或消除與晶格及熱不匹配相關聯之問題。然而,由於數種原因含鋁製備層32係有問題的。首先,如上文參考圖1所闡述,在某些裝置中,移除成長基板且粗糙化或圖案化藉由移除成長基板而曝露之半導體結構以改良光提取。不同於通常係藉由移除一習用藍寶石或SiC成長基板而曝露之III氮化物表面之GaN,上文所闡述之AlN晶種層34難以藉助常用技術(諸如濕式蝕刻及光電化學蝕刻)粗糙化。AlN必須藉由乾式蝕刻粗糙化或移除,乾式蝕刻係可損壞半導體結構且因此減少晶圓良率之一侵略性製程。其次,含鋁製備層32之低折射率(AlN具有約2.2之一折射率)可致使在較高折射率、主要係GaN(約2.4之折射率)之裝置結構38中產生之光耗費在沿含鋁製備層32與裝置結構38之間的界面之內部波導上。
本發明之實施例可減少或消除與在一Si基板上成長之一III氮化物裝置中之含鋁製備層相關聯之問題。
圖6圖解說明根據本發明之實施例之一裝置。在圖6中所圖解說明之裝置中,半導體結構相對於III氮化物層之成長方向翻轉,且n觸點46及p觸點48以如此項技術中已知之一覆晶方式形成於該半導體結構上。為解決在移除矽基板之後粗糙化含鋁製備層以達成光提取之困難之問題,圖6中所圖解說明之裝置包含在移除矽基板30之後形成於製備層32上之一散射結構72。散射結構72可係(舉例而言)一經粗糙化氧化矽或氮化矽層,如下文所闡述。為解決沿含鋁製備層32與裝置結構38之間的界面之波導之問題,圖6之裝置在製備層32與裝置結構38之間包含一波導中斷散射結構70。散射結構70可係(舉例而言)一多孔III氮化物層或一經粗糙化、經圖案化或經紋理化III氮化物層,如下文所闡述。
圖6中所圖解說明之裝置可如下形成。如上文參考圖2所闡述,首先在矽基板30上成長製備層32。在某些實施例中,在成長製備層32之後,形成選用散射結構70。
散射結構70可係一經粗糙化、經圖案化或經紋理化III氮化物層。在某些實施例中,成長AlN晶種層34及AlGaN緩衝層36,接著(舉例而言)藉由蝕刻或機械技術自反應器移除且處理晶圓以在AlGaN緩衝層36上形成一經粗糙化、經紋理化或經圖案化非平坦表面。接著將晶圓返回至成長室,且在AlGaN緩衝層36之非平坦表面之上方成長下文所闡述之裝置結構38。在其中省略AlGaN緩衝層36之裝置中,可在成長裝置結構38之前將AlN晶種層34之表面製成非平坦的。經粗糙化、經紋理化或經圖案化表面可增加界面處之散射量,此可減少耗費在界面處之波導上之光之量。
散射結構70可係形成於製備層32與裝置結構38之間的一多孔半
導體材料區域60,如圖5中所圖解說明。多孔區域60可增加界面處之散射量,此可減少耗費在界面處之波導之光之量。
多孔區域60可藉由任何適合技術形成,如此項技術中已知。舉例而言,多孔區域60可如下形成:在Si成長基板上成長一或多個含鋁製備層32,如上文所闡述。在製備層32上方成長一III氮化物層62,III氮化物層62將被製成多孔的、通常係GaN但可係任何適合III氮化物材料,包含但不限於AlGaN及InGaN。圖8中圖解說明用於將III氮化物層62製成多孔之一配置。銀81藉由熱蒸發而在半導體結構80之頂部表面之一區域中沈積,半導體結構80包含III氮化物層62、製備層32及矽基板30。晶圓80放置於一鐵氟龍表面82上。銀區81與一清洗機84接觸且半導體結構80藉助一螺栓86緊固至鐵氟龍表面82。在一陽極蝕刻製程中,將充當陽極及陰極之鉑絲88連接至一電力供應器90。將陽極絲連接至清洗機84。將晶圓80及鉑絲88浸漬於一2M NaOH或KOH溶液92中。舉例而言,以10mA/cm2與20mA/cm2之間的一密度透過絲及晶圓施加一直流電。由一250W水銀燈供應選用UV照明94。一適當孔隙率可需要10至60分鐘處理,此後關斷燈及電流源。另一種選擇係,可在晶圓之表面上方直接施加鉑,或者在一光電化學驅動之製程中使用不同溶液,諸如KOH、氟酸或CH3OH:HF:H2O2。可藉由改變溶液之濃度控制孔隙率之密度及大小。可藉助一低莫耳濃度溶液(0.5% KOH)產生一小孔層。可藉助一高莫耳濃度溶液(2% KOH)產生在表面下面之一大孔層。
圖7圖解說明孔76之成長。蝕刻幾乎僅在孔76之端處的電解質-半導體界面之尖端處發生,以使得孔自孔之底部向下成長,如圖7中藉由箭頭所圖解說明。藉由在蝕刻期間更改溶液,可形成一多層孔隙率。
如圖7中所圖解說明,在多孔區域60中,在III氮化物材料中形成
空氣空隙76。該等空隙可具有在大小上大約數十至數百nm之一寬度78,舉例而言,在某些實施例中在大小上大於10nm且在某些實施例中在大小上小於500nm。最近鄰近空隙可具有相隔大約數十至數百nm之一間距80,舉例而言,在某些實施例中相隔大於10nm且在某些實施例中相隔小於500nm。如圖5中所圖解說明,多孔區域60可具有在某些實施例中大於0.02μm厚且在某些實施例中小於3μm厚之一厚度82。定義為空隙之體積佔多孔區域60之總體積之一百分比的百分比孔隙率在某些實施例中可大於20%,在某些實施例中小於80%且在某些實施例中大於50%。在某些實施例中,孔可係自多孔區域60之表面朝向製備層32延伸之實質上平行隧道。散射係因III氮化物材料與孔內部之周圍氣體之間的折射率差異而導致。
製成多孔區域60的III氮化物層62之厚度可(舉例而言)在某些實施例中大於0.5μm,在某些實施例中小於5μm,在某些實施例中小於2μm,在某些實施例中在0.5μm與1.5μm之間,且在某些實施例中係1μm。III氮化物層通常係n型GaN,但在某些實施例中其可係未經摻雜或p型材料。III氮化物層62之整個厚度可在某些實施例中製成多孔的,或III氮化物層62之小於整個厚度可在某些實施例中製成多孔的,以使得III氮化物層62之一無孔區域安置於多孔區域60與製備層32之間。在某些實施例中,多孔區域60延伸至製備層32中。在形成多孔區域60之後,將結構返回至一成長反應器且成長裝置結構38,如下文所闡述。
在上文所闡述之結構中之任一者上方成長一III氮化物裝置結構38:未粗糙化或紋理化之製備層32、經粗糙化或經紋理化製備層32或多孔區域60。裝置結構38包含一發光或作用區域42,發光或作用區域42通常包含夾在n型區域40與p型區域44之間的至少一個InGaN發光層,每一InGaN發光層通常包含至少一個GaN層。一n型區域40可首先
成長且可包含不同組合物及摻雜劑濃度之多個層,包含(舉例而言)可係n型或非有意摻雜之層及n型或甚至p型裝置層,該等層針對發光區域高效地發射光可期望之特定光學、材料或電性質設計。在n型區域40上方成長一發光或作用區域42。適合發光區域42之實例包含一單個厚或薄發光層或一多量子井發光區域,該多量子井發光區域包含藉由障壁層分離之多個薄或厚發光層。可接著在發光區域42上方成長一p型區域44。如同n型區域40,p型區域44可包含不同組合物、厚度及摻雜劑濃度之多個層,包含非有意摻雜之層或n型層。成長於基板30上之所有層(包含區域32及38)之總厚度可在某些實施例中小於10μm且在某些實施例中小於6μm。
在成長裝置結構38之後,可進一步處理包含基板30及成長於該基板上之半導體結構32及38之一晶圓。舉例而言,為形成覆晶LED,在p型區域44上形成一反射性金屬p觸點。接著,藉由標準光微影操作圖案化裝置結構38且蝕刻裝置結構38以針對每一LED移除p型區域44之整個厚度之一部分及發光區域42之整個厚度之一部分以形成一台面,該台面顯露其上形成有一金屬n觸點之n型區域40之一表面。可以任何適合方式形成該台面以及p及n觸點。形成該台面以及p及n觸點係熟習此項技術者眾所周知的。
可接著將晶圓單粒化成個別附接至支撐件之若干個別裝置,或在單粒化之前附接至一晶圓級上之一支撐件。支撐件係機械地支撐半導體結構之一結構。適合支撐件之實例包含:具有用於形成至半導體結構之電連接之導電導通體之一絕緣或半絕緣晶圓(諸如一矽晶圓)、(舉例而言)藉由鍍敷形成於半導體結構上之厚金屬接合墊或一陶瓷、金屬或者任何其他適合安裝件。在於單粒化之前或之後將半導體結構附接至一支撐件之後,可自III氮化物結構移除成長基板。
圖3圖解說明其中移除成長基板之附接至一支撐件之一覆晶裝
置。裝置結構38透過金屬n觸點46及金屬p觸點48附接至支撐件50。該等n及p觸點可藉由可填充有空氣、周圍氣體或一固體絕緣材料(諸如一種矽氧化物、聚矽氧或環氧樹脂)之一間隙47電隔離。藉由移除矽成長基板30而曝露的經成長半導體材料之表面係AlN晶種層34之表面。由於觸點46及48中之一者或兩者係反射性的,因此大多數光穿過頂部及側表面自圖3之結構逃逸。
如上文所闡述,為了避免因粗糙化、紋理化或移除在移除成長基板之後曝露之AlN晶種層導致之損壞,在某些實施例中,在藉由移除成長基板而顯露的半導體結構之表面上形成一經粗糙化材料層。圖4圖解說明根據本發明之實施例之一裝置之一部分。如上文所闡述,當移除成長基板時,AlN晶種層34之表面被曝露。在圖4中所圖解說明之結構中,具有接近或匹配AlN晶種層34之折射率之一折射率之一光學透明材料層56形成於AlN晶種層34之表面上方。層56之頂部表面54經粗糙化以增強自半導體結構之光提取。
透明材料56經選擇為對發光區域所發射之光透明,以使得透明材料52之吸收或散射係標稱的。透明材料56之折射率在某些實施例中係至少1.9,在某些實施例中係至少2.0且在某些實施例中係至少2.1,以使得透明材料56之折射率接近AlN晶種層34(2.2之折射率)及裝置結構38(2.4之折射率)中之任何GaN層之折射率。適合透明材料56之實例包含非III氮化物材料、矽之氧化物、矽之氮化物、矽之氧氮化物、SiO2、Si3N4、SiOxNy及其混合物。在某些實施例中,透明材料56可係一多層結構。透明材料56可藉由(舉例而言)化學汽相沈積或任何其他適合技術形成。
透明材料56之表面54可藉由任何適合技術或技術之組合(舉例而言,包含乾式或濕式蝕刻及利用自遮蔽、圖案化遮蔽、微影圖案化、微球體圖案化或任何其他適合遮蔽技術之乾式或濕式蝕刻)圖案化、
粗糙化或紋理化。舉例而言,一Si3N4層56可使用已知光微影技術(諸如i線光阻劑圖案化)以隨機或規則特徵圖案化,後續接著CHF3電漿蝕刻,如此項技術中已知。在某些實施例中,圖案化、紋理化或粗糙化延伸穿過透明材料56之一整個厚度到達晶種層34之表面。
在某些實施例中,一或多個額外選用結構可形成於透明層56之經粗糙化表面54上方。舉例而言,一或多個波長轉換材料、光學器件、濾光器(諸如二向色濾光器)或其他結構可安置於透明層56上方,與透明層56接觸或與透明層56間隔開。
已詳細闡述了本發明,熟習此項技術者應瞭解,鑒於本發明,可在不背離本文中所闡述之本發明概念之精神之情況下對本發明做出修改。舉例而言,可組合不同實施例之不同元件以形成新實施例。因此,不意欲本發明之範疇限於所圖解說明及闡述之特定實施例。
30‧‧‧矽基板
32‧‧‧製備層/含鋁製備層
34‧‧‧AlN晶種層
36‧‧‧AlGaN緩衝層
38‧‧‧III氮化物裝置結構/裝置結構
40‧‧‧n型區域
42‧‧‧發光區域/作用區域
44‧‧‧p型區域
Claims (22)
- 一種發光裝置,其包括:一半導體結構,其包括:一III族氮化物發光層,其安置(disposed)於一n型區域與一p型區域之間;及一含鋁層,其中該含鋁層包括該半導體結構之一頂部表面;安置於該半導體結構之一底部表面上之該n型區域上之一金屬n觸點,及安置於該半導體結構之該底部表面上之該p型區域上之一金屬p觸點;及一透明材料,其安置於該半導體結構之該頂部表面上之該含鋁層上。
- 如請求項1之裝置,其中該含鋁層係AlN。
- 如請求項1之裝置,其中該n型區域安置於該含鋁層與該III族氮化物發光層之間。
- 如請求項1之裝置,其中該透明材料具有至少2.0之一折射率。
- 如請求項1之裝置,其中該透明材料包括一種矽氧化物。
- 如請求項1之裝置,其中該透明材料包括一種矽氮化物。
- 如請求項1之裝置,其中該透明材料之該表面被粗糙化、紋理化或圖案化。
- 如請求項1之裝置,其中安置於該含鋁層與發光區域之間的一界面係非平坦的。
- 如請求項8之裝置,其中該非平坦界面係一AlGaN層與係該n型區域之部分之一GaN層之間的一界面。
- 如請求項1之裝置,其進一步包括安置於該含鋁層與該III族氮化 物發光層之間的一多孔半導體層。
- 如請求項1之裝置,其中該含鋁層包括安置於該n型區域上方之一AlGaN層及安置於該AlGaN層上方之一AlN層。
- 一種用於製造一發光裝置之方法,其包括:在包括矽之一基板上成長一半導體結構,該半導體結構包括:一含鋁層,其與該基板直接接觸;及一III族氮化物發光層,其安置於一n型區域與一p型區域之間;在該半導體結構之一第一側上之該n型區域上形成一金屬n觸點,及在該半導體結構之該第一側上之該p型區域上形成一金屬p觸點移除該基板;及在移除該基板之後,與該含鋁層直接接觸地形成一透明材料。
- 如請求項12之方法,其中該基板包括一矽層。
- 如請求項12之方法,其中該含鋁層係AlN。
- 如請求項12之方法,其中該透明材料具有至少2.0之一折射率。
- 如請求項12之方法,其中藉由化學汽相沈積形成該透明材料。
- 如請求項12之方法,其中該透明材料係一非III族氮化物材料。
- 如請求項12之方法,其進一步包括:在成長該含鋁層之後,在該半導體結構上形成一非平坦表面;在形成該非平坦表面之後,成長安置於該n型區域與該p型區域之間的該III族氮化物發光層。
- 如請求項12之方法,其進一步包括: 在成長該含鋁層之後,形成一多孔GaN層;在形成該多孔GaN層之後,成長安置於該n型區域與該p型區域之間的該III族氮化物發光層。
- 如請求項12之裝置,其進一步包括紋理化該透明材料。
- 一種發光裝置,其包括:一半導體結構,其包括:一III族氮化物發光層,其安置於一n型區域與一p型區域之間;及一含鋁層;及一多孔III族氮化物區域,其安置於該含鋁層與該III族氮化物發光層之間。
- 如請求項21之裝置,其中該多孔III族氮化物區域係GaN且該半導體結構成長於一矽基板上。
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CN104205369A (zh) | 2014-12-10 |
TW201735398A (zh) | 2017-10-01 |
KR102116152B1 (ko) | 2020-05-28 |
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