JP2019033280A - 基板ウェハ上に形成された発光デバイスを分離する方法 - Google Patents
基板ウェハ上に形成された発光デバイスを分離する方法 Download PDFInfo
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- JP2019033280A JP2019033280A JP2018203388A JP2018203388A JP2019033280A JP 2019033280 A JP2019033280 A JP 2019033280A JP 2018203388 A JP2018203388 A JP 2018203388A JP 2018203388 A JP2018203388 A JP 2018203388A JP 2019033280 A JP2019033280 A JP 2019033280A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (10)
- 成長基板上に発光半導体構造を少なくとも部分的に形成し、前記発光半導体構造は、n型領域とp型領域との間に配置された発光層を有し、前記成長基板は、正面側と、該正面側とは反対の裏面側とを有し、前記発光半導体構造は前記正面側に成長され、
前記成長基板上に前記発光半導体構造を少なくとも部分的に形成した後に、前記発光半導体構造内に、前記成長基板の前記正面側の部分を露出させる複数の開口を形成し、且つ、前記複数の開口内で露出された前記成長基板の前記正面側の部分にノッチを形成し、前記ノッチの各々が、前記成長基板の前記正面側から前記成長基板の中まで延在し、前記ノッチの各々が、互いに向かって傾斜して該ノッチの底で出会うそれぞれの面を持ち、
前記成長基板に前記ノッチを形成した後に、前記成長基板上で前記発光半導体構造を処理することによって、前記成長基板上で複数のLEDを完成させ、
前記成長基板上で前記複数のLEDを完成させた後に、前記成長基板の前記裏面側を薄化することで、前記ノッチを露出させて、前記完成されたLEDを分離する、
ことを有する方法。 - 前記ノッチは、ドライエッチング及びウェットエッチングのうちの少なくとも一方を用いて形成される、請求項1に記載の方法。
- 前記成長基板にノッチを形成することは、前記成長基板内に前記ノッチをソーイングする又はレーザスクライビングすることを有する、請求項1に記載の方法。
- 前記成長基板はサファイアである、請求項1に記載の方法。
- 前記成長基板の前記裏面側を薄化することの後に、前記完成されたLEDの各々に前記成長基板の一部が取り付けられたままである、請求項1に記載の方法。
- 成長基板上に発光半導体構造を少なくとも部分的に形成し、前記発光半導体構造は、n型領域とp型領域との間に配置された発光層を有し、前記成長基板は、正面側と、該正面側とは反対の裏面側とを有し、前記発光半導体構造は前記正面側に成長され、
前記成長基板上に前記発光半導体構造を少なくとも部分的に形成した後に、前記発光半導体構造内に、前記成長基板の前記正面側の部分を露出させる複数の開口を形成し、且つ、前記複数の開口内で露出された前記成長基板の前記正面側の部分にノッチを形成し、前記ノッチの各々が、前記成長基板の前記正面側から前記成長基板の中まで延在し、前記ノッチの各々がU次形状を持ち、
前記成長基板に前記ノッチを形成した後に、前記成長基板上で前記発光半導体構造を処理することによって、前記成長基板上で複数のLEDを完成させ、
前記成長基板上で前記複数のLEDを完成させた後に、前記成長基板の前記裏面側を薄化することで、前記ノッチを露出させて、前記完成されたLEDを分離する、
ことを有する方法。 - 前記ノッチは、ドライエッチング及びウェットエッチングのうちの少なくとも一方を用いて形成される、請求項6に記載の方法。
- 前記成長基板にノッチを形成することは、前記成長基板内に前記ノッチをソーイングする又はレーザスクライビングすることを有する、請求項6に記載の方法。
- 前記成長基板はサファイアである、請求項6に記載の方法。
- 前記成長基板の前記裏面側を薄化することの後に、前記完成されたLEDの各々に前記成長基板の一部が取り付けられたままである、請求項6に記載の方法。
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TW201511330A (zh) | 2015-03-16 |
EP3025378A1 (en) | 2016-06-01 |
KR20160034987A (ko) | 2016-03-30 |
TW202006969A (zh) | 2020-02-01 |
US20190103508A1 (en) | 2019-04-04 |
US20160163916A1 (en) | 2016-06-09 |
US10079327B2 (en) | 2018-09-18 |
EP3025378B1 (en) | 2020-05-06 |
CN105556684B (zh) | 2019-10-18 |
JP2016533029A (ja) | 2016-10-20 |
TWI726494B (zh) | 2021-05-01 |
US11038082B2 (en) | 2021-06-15 |
JP6429872B2 (ja) | 2018-11-28 |
US20200235259A1 (en) | 2020-07-23 |
CN105556684A (zh) | 2016-05-04 |
US11038081B2 (en) | 2021-06-15 |
KR102231083B1 (ko) | 2021-03-23 |
WO2015011583A1 (en) | 2015-01-29 |
TWI680588B (zh) | 2019-12-21 |
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