CN102569543B - 一种发光二极管芯片的制作方法 - Google Patents
一种发光二极管芯片的制作方法 Download PDFInfo
- Publication number
- CN102569543B CN102569543B CN201010616141.8A CN201010616141A CN102569543B CN 102569543 B CN102569543 B CN 102569543B CN 201010616141 A CN201010616141 A CN 201010616141A CN 102569543 B CN102569543 B CN 102569543B
- Authority
- CN
- China
- Prior art keywords
- growth
- light
- emitting diode
- backlight unit
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 41
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 4
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 238000003698 laser cutting Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 32
- 229910002601 GaN Inorganic materials 0.000 description 31
- 239000000463 material Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 230000009172 bursting Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000013517 stratification Methods 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- -1 InGaN (InGaN) Chemical compound 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010616141.8A CN102569543B (zh) | 2010-12-30 | 2010-12-30 | 一种发光二极管芯片的制作方法 |
PCT/CN2011/084574 WO2012089074A1 (en) | 2010-12-30 | 2011-12-23 | Method for manufacturing light emitting diode chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010616141.8A CN102569543B (zh) | 2010-12-30 | 2010-12-30 | 一种发光二极管芯片的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102569543A CN102569543A (zh) | 2012-07-11 |
CN102569543B true CN102569543B (zh) | 2015-09-02 |
Family
ID=46382306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010616141.8A Expired - Fee Related CN102569543B (zh) | 2010-12-30 | 2010-12-30 | 一种发光二极管芯片的制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102569543B (zh) |
WO (1) | WO2012089074A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014195040A (ja) * | 2013-02-27 | 2014-10-09 | Mitsuboshi Diamond Industrial Co Ltd | Led素子の製造方法、led素子製造用ウェハ基材およびled素子の製造装置 |
US10079327B2 (en) | 2013-07-22 | 2018-09-18 | Lumileds Llc | Method of separating light emitting devices formed on a substrate wafer |
JP6726215B2 (ja) * | 2015-04-28 | 2020-07-22 | ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー | フラッシュランプおよびマスクを使用して複数のチップをはんだ付けするための装置および方法 |
CN110854042A (zh) * | 2019-11-12 | 2020-02-28 | 苏州迈为科技股份有限公司 | 太阳能电池裂片方法和系统 |
CN112993107A (zh) * | 2019-12-12 | 2021-06-18 | 厦门三安光电有限公司 | 发光二极管及其制作方法 |
CN114792748A (zh) * | 2022-06-23 | 2022-07-26 | 西安中为光电科技有限公司 | 一种led芯片加工方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101388427A (zh) * | 2007-09-12 | 2009-03-18 | 泰谷光电科技股份有限公司 | 发光二极管元件的制造方法 |
CN101789476A (zh) * | 2010-02-09 | 2010-07-28 | 上海蓝光科技有限公司 | 一种发光二极管芯片的制造方法 |
CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100580905C (zh) * | 2007-04-20 | 2010-01-13 | 晶能光电(江西)有限公司 | 获得在分割衬底上制造的半导体器件的高质量边界的方法 |
KR101425167B1 (ko) * | 2008-01-07 | 2014-07-31 | 삼성전자주식회사 | 질화물 반도체 발광소자 제조방법 및 이에 의해 제조된질화물 반도체 발광소자 |
JP2009283912A (ja) * | 2008-04-25 | 2009-12-03 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
-
2010
- 2010-12-30 CN CN201010616141.8A patent/CN102569543B/zh not_active Expired - Fee Related
-
2011
- 2011-12-23 WO PCT/CN2011/084574 patent/WO2012089074A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101388427A (zh) * | 2007-09-12 | 2009-03-18 | 泰谷光电科技股份有限公司 | 发光二极管元件的制造方法 |
CN101789476A (zh) * | 2010-02-09 | 2010-07-28 | 上海蓝光科技有限公司 | 一种发光二极管芯片的制造方法 |
CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102569543A (zh) | 2012-07-11 |
WO2012089074A1 (en) | 2012-07-05 |
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PB01 | Publication | ||
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GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160907 Address after: 516083 Guangdong city of Huizhou province Dayawan xiangshuihe Patentee after: HUIZHOU BYD INDUSTRIAL Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20191127 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 516083 Guangdong city of Huizhou province Dayawan xiangshuihe Patentee before: HUIZHOU BYD INDUSTRIAL Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200819 Address after: 516083 Longshan 7th Road, Dayawan West District, Huizhou City, Guangdong Province (BYD Co., Ltd. complex building) Patentee after: Guangdong BYD Energy Saving Technology Co.,Ltd. Address before: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee before: BYD Semiconductor Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150902 |
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CF01 | Termination of patent right due to non-payment of annual fee |