CN102569543A - 一种发光二极管芯片的制作方法 - Google Patents
一种发光二极管芯片的制作方法 Download PDFInfo
- Publication number
- CN102569543A CN102569543A CN2010106161418A CN201010616141A CN102569543A CN 102569543 A CN102569543 A CN 102569543A CN 2010106161418 A CN2010106161418 A CN 2010106161418A CN 201010616141 A CN201010616141 A CN 201010616141A CN 102569543 A CN102569543 A CN 102569543A
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- Prior art keywords
- emitting diode
- growth
- manufacture method
- light
- island
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- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 230000012010 growth Effects 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000000407 epitaxy Methods 0.000 claims abstract 6
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000005516 engineering process Methods 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 4
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 14
- 238000003698 laser cutting Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 31
- 229910002601 GaN Inorganic materials 0.000 description 29
- 238000000605 extraction Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- 238000013517 stratification Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- -1 InGaN (InGaN) Chemical compound 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (17)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010616141.8A CN102569543B (zh) | 2010-12-30 | 2010-12-30 | 一种发光二极管芯片的制作方法 |
PCT/CN2011/084574 WO2012089074A1 (en) | 2010-12-30 | 2011-12-23 | Method for manufacturing light emitting diode chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010616141.8A CN102569543B (zh) | 2010-12-30 | 2010-12-30 | 一种发光二极管芯片的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102569543A true CN102569543A (zh) | 2012-07-11 |
CN102569543B CN102569543B (zh) | 2015-09-02 |
Family
ID=46382306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010616141.8A Expired - Fee Related CN102569543B (zh) | 2010-12-30 | 2010-12-30 | 一种发光二极管芯片的制作方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102569543B (zh) |
WO (1) | WO2012089074A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104009129A (zh) * | 2013-02-27 | 2014-08-27 | 三星钻石工业股份有限公司 | Led元件的制造方法、制造用晶片基材及制造装置 |
CN107690697A (zh) * | 2015-04-28 | 2018-02-13 | 荷兰应用自然科学研究组织Tno | 使用闪光灯和掩模来焊接多个芯片的装置和方法 |
CN110854042A (zh) * | 2019-11-12 | 2020-02-28 | 苏州迈为科技股份有限公司 | 太阳能电池裂片方法和系统 |
CN112993107A (zh) * | 2019-12-12 | 2021-06-18 | 厦门三安光电有限公司 | 发光二极管及其制作方法 |
CN114792748A (zh) * | 2022-06-23 | 2022-07-26 | 西安中为光电科技有限公司 | 一种led芯片加工方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6429872B2 (ja) | 2013-07-22 | 2018-11-28 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 基板ウェハ上に形成された発光デバイスを分離する方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101388427A (zh) * | 2007-09-12 | 2009-03-18 | 泰谷光电科技股份有限公司 | 发光二极管元件的制造方法 |
US20090173965A1 (en) * | 2008-01-07 | 2009-07-09 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured using the method |
CN101567417A (zh) * | 2008-04-25 | 2009-10-28 | 三洋电机株式会社 | 氮化物类半导体元件和其制造方法 |
CN101789476A (zh) * | 2010-02-09 | 2010-07-28 | 上海蓝光科技有限公司 | 一种发光二极管芯片的制造方法 |
CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100580905C (zh) * | 2007-04-20 | 2010-01-13 | 晶能光电(江西)有限公司 | 获得在分割衬底上制造的半导体器件的高质量边界的方法 |
-
2010
- 2010-12-30 CN CN201010616141.8A patent/CN102569543B/zh not_active Expired - Fee Related
-
2011
- 2011-12-23 WO PCT/CN2011/084574 patent/WO2012089074A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101388427A (zh) * | 2007-09-12 | 2009-03-18 | 泰谷光电科技股份有限公司 | 发光二极管元件的制造方法 |
US20090173965A1 (en) * | 2008-01-07 | 2009-07-09 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured using the method |
CN101567417A (zh) * | 2008-04-25 | 2009-10-28 | 三洋电机株式会社 | 氮化物类半导体元件和其制造方法 |
CN101789476A (zh) * | 2010-02-09 | 2010-07-28 | 上海蓝光科技有限公司 | 一种发光二极管芯片的制造方法 |
CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104009129A (zh) * | 2013-02-27 | 2014-08-27 | 三星钻石工业股份有限公司 | Led元件的制造方法、制造用晶片基材及制造装置 |
CN107690697A (zh) * | 2015-04-28 | 2018-02-13 | 荷兰应用自然科学研究组织Tno | 使用闪光灯和掩模来焊接多个芯片的装置和方法 |
CN110854042A (zh) * | 2019-11-12 | 2020-02-28 | 苏州迈为科技股份有限公司 | 太阳能电池裂片方法和系统 |
CN112993107A (zh) * | 2019-12-12 | 2021-06-18 | 厦门三安光电有限公司 | 发光二极管及其制作方法 |
CN114792748A (zh) * | 2022-06-23 | 2022-07-26 | 西安中为光电科技有限公司 | 一种led芯片加工方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102569543B (zh) | 2015-09-02 |
WO2012089074A1 (en) | 2012-07-05 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160907 Address after: 516083 Guangdong city of Huizhou province Dayawan xiangshuihe Patentee after: HUIZHOU BYD INDUSTRIAL Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191127 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 516083 Guangdong city of Huizhou province Dayawan xiangshuihe Patentee before: HUIZHOU BYD INDUSTRIAL Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200819 Address after: 516083 Longshan 7th Road, Dayawan West District, Huizhou City, Guangdong Province (BYD Co., Ltd. complex building) Patentee after: Guangdong BYD Energy Saving Technology Co.,Ltd. Address before: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee before: BYD Semiconductor Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150902 |