JP2009283912A - 窒化物系半導体素子およびその製造方法 - Google Patents
窒化物系半導体素子およびその製造方法 Download PDFInfo
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- JP2009283912A JP2009283912A JP2009076259A JP2009076259A JP2009283912A JP 2009283912 A JP2009283912 A JP 2009283912A JP 2009076259 A JP2009076259 A JP 2009076259A JP 2009076259 A JP2009076259 A JP 2009076259A JP 2009283912 A JP2009283912 A JP 2009283912A
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Abstract
【解決手段】この窒化物系半導体素子30は、基板11と、基板11の側端面30aの主表面側に形成された段差部21cと、側端面30aの反対側で、かつ、側端面30aと略平行な側端面30bの主表面側に形成された段差部21dと、主表面上に、段差部21cの側壁21aを起点とする(000−1)面からなる結晶成長面12aと、段差部21dの側壁21bを起点とする結晶成長面12bとを含む窒化物系半導体層12とを備える。
【選択図】図4
Description
図4および図5を参照して、第1実施形態の窒化物系半導体レーザ素子30の構造について説明する。
この第2実施形態では上記第1実施形態と異なり、n型GaN基板11上にAlGaNからなる下地層50を形成した後、発光素子層42を形成するものであり、以下、図11を参照して説明する。
この第3実施形態の窒化物系半導体レーザ素子60の製造プロセスでは、上記第2実施形態と異なり、n型GaN基板61上の下地層50に破線状のスクライブ傷70を形成することによってクラックの発生位置が制御されたクラック71を形成するものであり、以下、図12および図14〜図16を参照して説明する。なお、n型GaN基板61は、本発明の「下地基板」の一例であり、クラック71は、本発明の「凹部」の一例である。
この第4実施形態では上記第1実施形態と異なり、m面((1−100)面)からなる主表面を有するn型GaN基板81上にAlGaNからなる下地層50を形成した後、発光素子層82を形成するものであり、以下、図17を参照して説明する。なお、n型GaN基板81および発光素子層82は、それぞれ、本発明の「下地基板」および「窒化物系半導体層」の一例である。
図18〜図20を参照して、上記第4実施形態の効果を確認するために行った実験について説明する。
図22を参照して、第6実施形態によるLEDチップ100の構造について説明する。なお、LEDチップ100は、本発明の「窒化物系半導体素子」の一例である。
図24を参照して、電子デバイスの一例である第7実施形態の電界効果トランジスタ(FET)200の構造について説明する。
1a 凹部
1b、21c、51c、52c 段差部(第1段差部)
1c、21d、51d、52d 段差部(第2段差部)
1d 側壁(第1側壁)
1e 側壁(第2側壁)
2 第1半導体層(窒化物系半導体層)
3 発光層(窒化物系半導体層)
4 第2半導体層(窒化物系半導体層)
4a、15a リッジ
5 窒化物系半導体層
10、30、40、60、80、90 窒化物系半導体レーザ素子(半導体レーザ素子)
10a 側面(第1側面)
10b 側面(第2側面)
10c、30a、40a、80a、100a 側端面(第1側端面)
10d、30b、40b、80b、100b 側端面(第2側端面)
11 n型GaN基板(基板、下地基板)
11a 凹部
12、42、82、92、112 発光素子層(窒化物系半導体層)
12a、42a、42c、82a、92a、112a、202a 結晶成長面(第1側面)
12b、42b、42d、82b、92b、112b、202b 結晶成長面(第2側面)
13 n型クラッド層(第1半導体層、窒化物系半導体層)
14 発光層(窒化物系半導体層)
15 p型クラッド層(第2半導体層、窒化物系半導体層)
21、93 溝部(凹部)
21a、51a、52a、71a、93a 内側面(第1側壁)
21b、51b、52b、71b、93b 内側面(第2側壁)
50 下地層
51、71 クラック(凹部)
61、81 n型GaN基板(下地基板)
91 4H−SiC基板(基板)
100 LEDチップ(半導体発光素子)
200 電界効果トランジスタ
202 半導体層
203 ソース電極
204 ドレイン電極
205 ゲート電極
Claims (6)
- 基板と、
前記基板の第1側端面の主表面側に形成された第1段差部と、
前記第1側端面の反対側で、かつ、前記第1側端面と略平行な第2側端面の前記主表面側に形成された第2段差部と、
前記主表面上に、前記第1段差部の第1側壁を起点とする(000−1)面からなる第1側面と、前記第2段差部の第2側壁を起点とする第2側面とを有する窒化物系半導体層とを備える、窒化物系半導体素子。 - 前記第1側壁は、(000−1)面からなる、請求項1に記載の窒化物系半導体素子。
- 前記第2側面は、{A+B、A、−2A−B、2A+B}面(ここでA≧0およびB≧0であり、かつ、AおよびBの少なくともいずれか一方が0ではない整数)からなる、請求項1または2に記載の窒化物系半導体素子。
- 前記第1側面および前記第2側面は、前記窒化物系半導体層の結晶成長面からなる、請求項1〜3のいずれか1項に記載の窒化物系半導体素子。
- 前記第1側面および前記第2側面は第1方向に沿って延びるとともに、前記窒化物系半導体素子は、前記第1方向に沿って延びる光導波路を有する、請求項1〜4のいずれか1項に記載の窒化物系半導体素子。
- 基板の主表面に複数の凹部を形成する工程と、
前記基板の主表面上に、前記凹部の第1側壁を起点として成長しながら形成される(000−1)面からなる第1側面と、前記第1側面と対向して、前記凹部の第2側壁を起点として成長しながら形成される第2側面とを備える複数の窒化物系半導体層を成長させる工程と、
前記第1側面と前記第2側面とが対向する領域において、前記窒化物系半導体層が形成された前記基板を分割してチップ化する工程とを備える、窒化物系半導体素子の製造方法。
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