CN101567417B - 氮化物类半导体元件和其制造方法 - Google Patents
氮化物类半导体元件和其制造方法 Download PDFInfo
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- CN101567417B CN101567417B CN200910137372.8A CN200910137372A CN101567417B CN 101567417 B CN101567417 B CN 101567417B CN 200910137372 A CN200910137372 A CN 200910137372A CN 101567417 B CN101567417 B CN 101567417B
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- 238000000034 method Methods 0.000 claims description 46
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 18
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
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Abstract
Description
Claims (16)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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JP2008115373 | 2008-04-25 | ||
JP2008115373 | 2008-04-25 | ||
JP2008-115373 | 2008-04-25 | ||
JP2009076259A JP2009283912A (ja) | 2008-04-25 | 2009-03-26 | 窒化物系半導体素子およびその製造方法 |
JP2009-076259 | 2009-03-26 | ||
JP2009076259 | 2009-03-26 |
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CN101567417A CN101567417A (zh) | 2009-10-28 |
CN101567417B true CN101567417B (zh) | 2015-01-28 |
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CN200910137372.8A Active CN101567417B (zh) | 2008-04-25 | 2009-04-24 | 氮化物类半导体元件和其制造方法 |
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US (1) | US8022427B2 (zh) |
JP (1) | JP2009283912A (zh) |
CN (1) | CN101567417B (zh) |
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US8022427B2 (en) | 2011-09-20 |
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US20090267100A1 (en) | 2009-10-29 |
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