FR3059147B1 - Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno - Google Patents

Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno Download PDF

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Publication number
FR3059147B1
FR3059147B1 FR1661191A FR1661191A FR3059147B1 FR 3059147 B1 FR3059147 B1 FR 3059147B1 FR 1661191 A FR1661191 A FR 1661191A FR 1661191 A FR1661191 A FR 1661191A FR 3059147 B1 FR3059147 B1 FR 3059147B1
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Prior art keywords
heterostructure
type structure
zno substrate
wurtzite type
semiconductor heterostructures
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FR1661191A
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English (en)
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FR3059147A1 (fr
Inventor
Julien Brault
Mohamed AL KHALFIOUI
Benjamin Damilano
Jean-Michel CHAUVEAU
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Centre National de la Recherche Scientifique CNRS
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Centre National de la Recherche Scientifique CNRS
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Priority to FR1661191A priority Critical patent/FR3059147B1/fr
Priority to EP17797365.8A priority patent/EP3542392A1/fr
Priority to US16/349,586 priority patent/US11217663B2/en
Priority to JP2019526550A priority patent/JP7213807B2/ja
Priority to PCT/EP2017/079275 priority patent/WO2018091502A1/fr
Priority to KR1020197017163A priority patent/KR102504115B1/ko
Publication of FR3059147A1 publication Critical patent/FR3059147A1/fr
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Publication of FR3059147B1 publication Critical patent/FR3059147B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/2203—Cd X compounds being one element of the 6th group of the Periodic System
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Procédé de fabrication d'une hétérostructure en matériaux semi-conducteurs présentant une structure cristalline de type wurtzite, comprenant les étapes suivantes : - structuration d'une surface (SD) d'un substrat (S) monocristallin d'oxyde de zinc en mesas (M) ; - dépôt par épitaxie d'au moins une couche (CA) en matériaux semi-conducteurs présentant une structure cristalline de type wurtzite, formant ladite hétérostructure, au dessus de la surface structurée. Hétérostructure obtenue par un tel procédé. Procédé de fabrication d'au moins un dispositif électronique ou optoélectronique à partir d'une telle hétérostructure.
FR1661191A 2016-11-18 2016-11-18 Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno Active FR3059147B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1661191A FR3059147B1 (fr) 2016-11-18 2016-11-18 Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno
EP17797365.8A EP3542392A1 (fr) 2016-11-18 2017-11-15 HETEROSTRUCTURES SEMI-CONDUCTRICES AVEC STRUCTURE DE TYPE WURTZITE SUR SUBSTRAT EN ZnO
US16/349,586 US11217663B2 (en) 2016-11-18 2017-11-15 Semiconductor heterostructures with wurtzite-type structure on ZnO substrate
JP2019526550A JP7213807B2 (ja) 2016-11-18 2017-11-15 ＺｎＯ基板上にウルツ鉱型構造を有する半導体ヘテロ構造
PCT/EP2017/079275 WO2018091502A1 (fr) 2016-11-18 2017-11-15 HETEROSTRUCTURES SEMI-CONDUCTRICES AVEC STRUCTURE DE TYPE WURTZITE SUR SUBSTRAT EN ZnO
KR1020197017163A KR102504115B1 (ko) 2016-11-18 2017-11-15 ZnO 기판 상에 우르차이트형 구조를 갖는 반도체 헤테로구조물들

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1661191 2016-11-18
FR1661191A FR3059147B1 (fr) 2016-11-18 2016-11-18 Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno

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FR3059147A1 FR3059147A1 (fr) 2018-05-25
FR3059147B1 true FR3059147B1 (fr) 2019-01-25

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FR1661191A Active FR3059147B1 (fr) 2016-11-18 2016-11-18 Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno

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US (1) US11217663B2 (fr)
EP (1) EP3542392A1 (fr)
JP (1) JP7213807B2 (fr)
KR (1) KR102504115B1 (fr)
FR (1) FR3059147B1 (fr)
WO (1) WO2018091502A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11848197B2 (en) * 2020-11-30 2023-12-19 Thinsic Inc. Integrated method for low-cost wide band gap semiconductor device manufacturing

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4612617B2 (ja) 2000-09-18 2011-01-12 三菱化学株式会社 半導体基材
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
US6979489B2 (en) * 2002-05-15 2005-12-27 Rutgers, The State University Of New Jersey Zinc oxide nanotip and fabricating method thereof
JP2005075651A (ja) * 2003-08-29 2005-03-24 National Institute For Materials Science ウルツ鉱型ｉｉｉ−ｖ族窒化物薄膜とその製造法
KR100631905B1 (ko) * 2005-02-22 2006-10-11 삼성전기주식회사 질화물 단결정 기판 제조방법 및 이를 이용한 질화물 반도체 발광소자 제조방법
JP4817673B2 (ja) * 2005-02-25 2011-11-16 三洋電機株式会社 窒化物系半導体素子の作製方法
CN100474642C (zh) * 2005-10-27 2009-04-01 晶能光电（江西）有限公司 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法
JP4637781B2 (ja) * 2006-03-31 2011-02-23 昭和電工株式会社 ＧａＮ系半導体発光素子の製造方法
JP2009283912A (ja) * 2008-04-25 2009-12-03 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
WO2010033792A1 (fr) * 2008-09-18 2010-03-25 Lumenz Llc Dispositifs électroluminescents à semi-conducteurs texturés
TWI471913B (zh) * 2009-07-02 2015-02-01 Global Wafers Co Ltd Production method of gallium nitride based compound semiconductor
EP2403019B1 (fr) 2010-06-29 2017-02-22 LG Innotek Co., Ltd. Dispositif électroluminescent
TWI573288B (zh) * 2010-10-18 2017-03-01 鴻海精密工業股份有限公司 發光二極體及其製作方法
CN103943754A (zh) * 2014-03-06 2014-07-23 京东方科技集团股份有限公司 一种电致发光器件及其制备方法和显示装置
FR3021454B1 (fr) * 2014-05-20 2019-12-13 Centre National De La Recherche Scientifique (Cnrs) Procede de fabrication d'un materiau semi-conducteur incluant une couche de nitrure d'element iii semi-polaire
FR3031834B1 (fr) * 2015-01-21 2018-10-05 Centre National De La Recherche Scientifique (Cnrs) Fabrication d'un support semi-conducteur a base de nitrures d'elements iii

Also Published As

Publication number Publication date
KR102504115B1 (ko) 2023-02-24
JP7213807B2 (ja) 2023-01-27
WO2018091502A1 (fr) 2018-05-24
US20190280085A1 (en) 2019-09-12
JP2020502785A (ja) 2020-01-23
EP3542392A1 (fr) 2019-09-25
FR3059147A1 (fr) 2018-05-25
KR20190079678A (ko) 2019-07-05
US11217663B2 (en) 2022-01-04

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