CN100474642C - 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法 - Google Patents
含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法 Download PDFInfo
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Abstract
本发明公开了一种含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法，该半导体发光元件包含：一个含铬的支撑基板，层叠于支撑基板之上的第一欧姆电极，层叠于第一欧姆电极之上的铟镓铝氮半导体叠层，层叠于铟镓铝氮半导体叠层之上的第二欧姆电极。制造上述发光元件的方法，包括以下步骤：在硅衬底上形成铟镓铝氮半导体叠层，在铟镓铝氮半导体叠层上形成第一欧姆电极，在第一欧姆电极上形成铬支撑基板，把硅衬底去除，在铟镓铝氮半导体叠层上形成第二欧姆电极。该发光元件具有成本较低、发光效率高、散热特性好等优点。
Description
技术领域
本发明涉及半导体发光元件及其制造方法，尤其是涉及一种含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法。
背景技术：
导体发光元件具有广泛的用途，它们在仪器工作状态显示、背光源、交通信号灯、照明等领域得到了广泛的应用。在半导体发光元件的制造工艺中，常常因为衬底本身的某种不足，例如不导电、不透明、导热性差等等，而要把生长衬底去除并把半导体外延叠层转移到别的支撑基板上去。现有技术中，一般使用一种焊接或键合(Bonding)技术，把半导体外延叠层粘接到另外一个支撑基板上，然后再把原生长衬底去除。然而这种方法由于需要昂贵的设备而且产率很低(一般一台机器一次只能生产一片)，另外要焊接牢固对粘接层的选择和粘接条件的选择很苛刻，因此不利于生产。
近年来发展的铟镓铝氮材料不仅把半导体发光元件的光谱范围延伸到绿色、蓝色和紫外波段，而且具有很高的发光亮度，因此大大拓展了半导体发光器件的应用领域。市场上现有的铟镓铝氮发光元件一般使用蓝宝石衬底或碳化硅衬底制备。由于蓝宝石衬底价格较贵，不导电，热导率低，而且切割困难，因此导致存在成本高、工艺复杂的问题。碳化硅衬底虽然导电且热导率高，但是价格非常昂贵，用于制备发光器件也使成本很高。为了解决上述不足，近年来开始研究使用硅衬底替代蓝宝石衬底和碳化硅衬底用于制备铟镓铝氮发光元件，因为硅不仅热导率、电导率均很高，而且价格便宜。但是由于硅对可见光不透明，且衬底的吸收会大大减少元件的光输出功率，因此这种发光元件的效率较低。为了改善硅衬底上生长的铟镓铝氮发光器件的出光效率，采用衬底转移技术是一个可行的办法，通过把铟镓铝氮外延叠层转移到具有反射镜的另一个衬底上，可以大大提高出光效率。此外近年来在蓝宝石上生长的铟镓铝氮外延叠层也在发展衬底转移技术，以解决衬底不导电和导热性差的问题。因此，对于铟镓铝氮发光器件，发展一种低成本、产率高、可靠性好的衬底转移技术就显得尤其迫切。
发明内容：
本发明的第一个目的在于提供一种半导体发光元件，这种发光元件具有成本较低、发光效率高、散热特性好等优点。
本发明的第二个目的在于提供一种半导体发光元件的制造方法。
本发明的第一个目的是这样实现的：
本发明的半导体发光元件具有如下结构，由下至上依次包含：支撑基板、第一欧姆电极、半导体叠层、第二欧姆电极，特征是：所述的支撑基板含有铬且铬成分不少于15％。
所述半导体叠层可以是铟镓铝氮、铟镓铝磷，铟镓铝砷，镁锌镉氧等等。优选实施例中，半导体叠层为铟镓铝氮。
本发明的发光元件中半导体叠层为：由下至上依次为P型层、发光层、N型层；或由下至上依次为N型层、发光层、P型层。
支撑基板使用常见的金属和其它导电材料，例如铬和含铬的合金，以及金、铂、铜、铁等。优选为铬和含铬的合金。使用含铬支撑基板的目的在于，它抗腐蚀性好、价格便宜、导电、反射率高。为了保证良好的抗腐蚀能力，铬成分不少于15％，优选情况下为支撑基板完全由铬组成。
由于铬难以与铟镓铝氮材料形成良好的欧姆接触，因此在铬基板和铟镓铝氮叠层之间还需要一层欧姆接触层即第一欧姆接电极。该欧姆接触层的选择随铟镓铝氮层而改变，如果半导体叠层中最下层为P型层，则欧姆接触层选择金、镍、铂等高功函数的金属；如果半导体叠层中最下层为N型层，则欧姆接触层选择钛、铝等低功函数金属。为了使发光元件具有高的出光效率，欧姆接触层优选反射率高的材料。同时为了保证加工过程中，欧姆接触层不被破坏，该层还优选抗腐蚀性好的材料。在本发明的优选方案中，P型层在下，第一欧姆接触层为铂。
作为可选择的方案，在欧姆接触层和基板之间，还可以加一粘接层，比如金、镍等，以增加铬支撑基板和欧姆接触层之间的粘附性。在铬基板背面可以形成一层压焊层，即压焊电极，以利于封装。
本发明的第二个目的是这样实现的：
本发明的半导体发光元件的制造方法包括以下步骤：在外延衬底背面形成发光半导体叠层，在所述的半导体叠层表面形成第一欧姆电极，在第一欧姆电极上形成一支撑基板，把所述的外延衬底去除并暴露半导体叠层的背面，在所述的半导体叠层背面形成第二欧姆电极，其特征是所述的支撑基板的形成方法为一种物理沉积或化学沉积方法。
采用沉积法形成支撑基板具有成本较低、沉积速度快、粘接牢固、容易实现大批量生产等优点，比现有技术中常用的衬底焊接或键合技术具有明显优势。作为支撑的基板，沉积的材料必须具有良好的稳定性，比如较高的熔点、良好的抗腐蚀性等等。优选情况下，还应具有良好的导电导热性能。为了实现低成本，进一步优选价格便宜的材料。在本发明中，沉积材料可以是常见的金属和其它导电材料，例如铬和含铬的合金，以及金、铂、铜、铁等。优选抗腐蚀性好的铬和含铬的合金，最优为铬。由于基板的厚度一般要求大于20微米，优选为大于30微米，以维持独立支撑，因此沉积方法优选为沉积速度快的方法，例如化学电镀、电弧离子沉积等等。
本发明的衬底可以是硅、蓝宝石、砷化镓等，优选易腐蚀的硅、砷化镓衬底。去除外延衬底的方法可以是化学腐蚀，也可以是干法刻蚀、机械磨片、激光剥离，或它们的组合。本发明优选方案中，基板为抗腐蚀性良好的材料，例如铬，这样就可以使用成本较低的化学方法去除外延衬底。
本发明的制造方法可以用于制造铟镓铝氮半导体发光元件，也可以用于制造铟镓铝磷、铟镓铝砷、镁锌镉氧等等发光元件。在优选实施例中，特别适合于制造高亮度的铟镓铝氮发光器件。
附图说明：
图1是本发明发光元件的实施例1的剖面结构示意图。其中1为支撑基板、2为第一欧姆电极、3为P型氮化镓层、4为铟镓氮/氮化镓多量子阱发光层、5为N型氮化镓层、6为第二欧姆电极。
图2是本发明发光元件的实施例2的剖面结构示意图。其中1为铬铁合金基板、2为第一欧姆电极、3为N型氮化镓层、4为铟镓氮/铝镓氮单量子阱发光层、5为P型氮化镓层、6为第二欧姆电极、7为粘接层、8为背面电极。
具体实施方式：
下面结合附图用3个实施例对本发明进行进一步的说明。
实施例1：
参照图1。本实施例中铟镓铝氮半导体发光元件具有如下结构：一个铬支撑基板1、层叠于铬支撑基板1之上的第一欧姆电极2、层叠于所述第一欧姆电极2之上的P型氮化镓层3、层叠于所述P型氮化镓层3之上的铟镓氮/氮化镓多量子阱发光层4、层叠于所述多量子阱发光层4之上的N型氮化镓层5、层叠于所述N型氮化镓层5之上的第二欧姆电极6。
该发光元件的制造方法为：使用化学气相沉积法，首先在一个硅衬底上形成氮化铝缓冲层，然后依次沉积N型氮化镓层5、铟镓氮/氮化镓多量子阱发光层4、P型氮化镓层3。沉积完成后，对外延片进行760℃热退火以激活P型杂质。在P型氮化镓层3上形成铂欧姆接触层即第一欧姆电极2。用电弧离子镀在铂欧姆接触层上镀上30微米厚的铬层即支撑基板1。使用硅腐蚀液把硅衬底去除，然后用反应离子刻蚀的方法把氮化铝缓冲层局部刻除并暴露N型氮化镓层5。在N型氮化镓层5上形成金锗镍欧姆电极即第二欧姆电极6。再经过划片、封装就可以得到完整的发光器件。
实施例2：
参照图2。本实施例中铟镓铝氮半导体发光元件具有如下结构：一个铬铁合金(含铬30％)支撑基板1、层叠于支撑基板1之上的粘接层7、层叠于所述粘接层7之上的第一欧姆电极2、层叠于所述第一欧姆电极2之上的N型氮化镓层3、层叠于所述N型氮化镓层3之上的铟镓氮/铝镓氮单量子阱发光层4、层叠于所述单量子阱发光层4之上的P型氮化镓层5、层叠于所述P型氮化镓层5之上的第二欧姆电极6、层叠于所述支撑基板1背面的背面电极8。
该发光元件的制造方法为：使用化学气相沉积法，首先在一个硅衬底上形成氮化铝缓冲层，然后依次沉积P型氮化镓层5、铟镓氮/铝镓氮单量子阱发光层4、N型氮化镓层3。沉积完成后，对外延片进行760℃热退火以激活P型杂质。在N型氮化镓层3上形成金锗镍欧姆接触层即第一欧姆电极2。金锗镍欧姆接触层上形成一粘接层7，在用化学电镀法在粘接层上镀上30微米厚的铬铁合金(含铬30％)层即支撑基板1。使用硅腐蚀液把硅衬底去除，然后用反应离子刻蚀的方法把氮化铝缓冲层局部刻除并暴露P型氮化镓层5，在P型氮化镓层5上形成铂欧姆电极即第二欧姆电极6。然后在支撑基板背面形成电极8。再经过划片、封装就可以得到完整的发光器件。
实施例3：
用化学气相沉积法，在一个砷化镓衬底上依次沉积铟镓铝磷过渡层，铟镓铝磷窗口层、N型铟镓铝磷层5、铟镓铝磷量子阱发光层4、P型铟镓铝磷层3。在P型铟镓铝磷层3表面蒸发一层金铍欧姆接触层即第一欧姆电极2，用磁控溅射法在金铍欧姆接触层上镀上30微米厚的铬层即支撑基板1。使用反应离子刻蚀法把砷化镓衬底去除，然后用反应离子刻蚀的方法把缓冲层刻除并暴露N型铟镓铝磷层层5。在N型铟镓铝磷层5上形成金锗镍欧姆电极即第二欧姆电极6。再经过划片、封装就可以得到完整的发光器件。
Claims (6)
1、一种含有金属铬基板的铟镓铝氮半导体发光元件，由下至上依次包含：支撑基板、第一欧姆电极、半导体叠层、第二欧姆电极，其特征在于：所述的支撑基板含有铬和铁，且铬的质量含量为15％～30％，其余为铁。
2、如权利要求1所述的铟镓铝氮半导体发光元件，其特征在于：所述半导体叠层为铟镓铝氮半导体叠层，所述的铟镓铝氮半导体叠层由下至上依次为P型层、发光层、N型层，或由下至上依次为N型层、发光层、P型层。
3、如权利要求1所述的铟镓铝氮半导体发光元件，其特征在于：所述的第一欧姆电极由金属铂形成，所述的第二欧姆电极由金、锗、镍三种元素及其合金形成。
4、如权利要求1所述的铟镓铝氮半导体发光元件，其特征在于：在所述支撑基板和所述第一欧姆电极之间还有一金属粘接层。
5、如权利要求1所述的铟镓铝氮半导体发光元件的制造方法，包括以下步骤：在外延衬底上形成发光的半导体叠层，在所述的半导体叠层表面形成第一欧姆电极，在所述的第一欧姆电极上形成一支撑基板，把所述的外延衬底去除并暴露半导体叠层的背面，在所述的半导体叠层背面上形成第二欧姆电极，其特征在于：所述外延衬底为硅衬底；在所述的支撑基板的形成方法为一种物理沉积或化学沉积方法。
6、如权利要求5所述的铟镓铝氮半导体发光元件的制造方法，其特征在于：所述的发光半导体叠层由铟镓铝氮材料、铟镓铝磷，铟镓铝砷，镁锌镉氧形成，生长衬底为硅、砷化镓或蓝宝石。
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| EP06805076A EP1941556B1 (en) | 2005-10-27 | 2006-10-26 | Semiconductor light-emitting device with metal support substrate |
| PCT/CN2006/002871 WO2007048346A1 (en) | 2005-10-27 | 2006-10-26 | Semiconductor light-emitting device with metal support substrate |
| AT06805076T ATE537565T1 (de) | 2005-10-27 | 2006-10-26 | Lichtemittierende halbleitervorrichtung mit metallsubstrat |
| JP2008536913A JP2009514198A (ja) | 2005-10-27 | 2006-10-26 | 金属支持基板を備えた半導体発光デバイス |
| KR1020087005774A KR20080060223A (ko) | 2005-10-27 | 2006-10-26 | 금속 지지 기판을 가지는 반도체 발광 장치 |
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| CN101295758B (zh) * | 2007-04-29 | 2013-03-06 | 晶能光电（江西）有限公司 | 含有碳基衬底的铟镓铝氮发光器件以及其制造方法 |
| CN102106006B (zh) | 2008-06-02 | 2014-12-10 | Lg伊诺特有限公司 | 用于制备半导体发光装置的支撑衬底和使用支撑衬底的半导体发光装置 |
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| US8361880B2 (en) | 2013-01-29 |
| EP1941556A1 (en) | 2008-07-09 |
| US20080224154A1 (en) | 2008-09-18 |
| EP1941556A4 (en) | 2009-06-17 |
| JP2009514198A (ja) | 2009-04-02 |
| EP1941556B1 (en) | 2011-12-14 |
| KR20080060223A (ko) | 2008-07-01 |
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