ATE537565T1 - Lichtemittierende halbleitervorrichtung mit metallsubstrat - Google Patents

Lichtemittierende halbleitervorrichtung mit metallsubstrat

Info

Publication number
ATE537565T1
ATE537565T1 AT06805076T AT06805076T ATE537565T1 AT E537565 T1 ATE537565 T1 AT E537565T1 AT 06805076 T AT06805076 T AT 06805076T AT 06805076 T AT06805076 T AT 06805076T AT E537565 T1 ATE537565 T1 AT E537565T1
Authority
AT
Austria
Prior art keywords
layer
light
semiconductor device
metal substrate
emitting semiconductor
Prior art date
Application number
AT06805076T
Other languages
English (en)
Inventor
Fengyi Jiang
Chuanbing Xiong
Wenqing Fang
Li Wang
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Application granted granted Critical
Publication of ATE537565T1 publication Critical patent/ATE537565T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
AT06805076T 2005-10-27 2006-10-26 Lichtemittierende halbleitervorrichtung mit metallsubstrat ATE537565T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2005100308687A CN100474642C (zh) 2005-10-27 2005-10-27 含有金属铬基板的铟镓铝氮半导体发光元件及其制造方法
PCT/CN2006/002871 WO2007048346A1 (en) 2005-10-27 2006-10-26 Semiconductor light-emitting device with metal support substrate

Publications (1)

Publication Number Publication Date
ATE537565T1 true ATE537565T1 (de) 2011-12-15

Family

ID=36805820

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06805076T ATE537565T1 (de) 2005-10-27 2006-10-26 Lichtemittierende halbleitervorrichtung mit metallsubstrat

Country Status (7)

Country Link
US (1) US8361880B2 (de)
EP (1) EP1941556B1 (de)
JP (1) JP2009514198A (de)
KR (1) KR20080060223A (de)
CN (1) CN100474642C (de)
AT (1) ATE537565T1 (de)
WO (1) WO2007048346A1 (de)

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US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
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CN101295758B (zh) * 2007-04-29 2013-03-06 晶能光电（江西）有限公司 含有碳基衬底的铟镓铝氮发光器件以及其制造方法
US20110127567A1 (en) * 2008-06-02 2011-06-02 Korea University Industrial & Academic Collaboration Foundation Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
WO2010020069A1 (en) * 2008-08-19 2010-02-25 Lattice Power (Jiangxi) Corporation METHOD FOR FABRICATING InGaAlN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE
US8354665B2 (en) * 2008-08-19 2013-01-15 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting devices for generating arbitrary color
WO2010020077A1 (en) * 2008-08-22 2010-02-25 Lattice Power (Jiangxi) Corporation Method for fabricating ingaain light-emitting device on a combined substrate
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
CN101840966B (zh) * 2009-05-08 2013-07-03 晶能光电（江西）有限公司 半导体发光器件以及制备发光二极管的方法
KR20110123118A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
US8853057B2 (en) 2010-09-28 2014-10-07 National Chung-Hsing University Method for fabricating semiconductor devices
TWI480926B (zh) * 2010-09-28 2015-04-11 Nat Univ Chung Hsing Preparation method of epitaxial element
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US9142412B2 (en) 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US8952395B2 (en) 2011-07-26 2015-02-10 Micron Technology, Inc. Wafer-level solid state transducer packaging transducers including separators and associated systems and methods
US8497146B2 (en) 2011-08-25 2013-07-30 Micron Technology, Inc. Vertical solid-state transducers having backside terminals and associated systems and methods
US8853668B2 (en) * 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
FR3059147B1 (fr) * 2016-11-18 2019-01-25 Centre National De La Recherche Scientifique Heterostructures semi-conductrices avec structure de type wurtzite sur substrat en zno

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US7635637B2 (en) * 2005-07-25 2009-12-22 Fairchild Semiconductor Corporation Semiconductor structures formed on substrates and methods of manufacturing the same

Also Published As

Publication number Publication date
US20080224154A1 (en) 2008-09-18
KR20080060223A (ko) 2008-07-01
WO2007048346A1 (en) 2007-05-03
EP1941556B1 (de) 2011-12-14
EP1941556A1 (de) 2008-07-09
EP1941556A4 (de) 2009-06-17
JP2009514198A (ja) 2009-04-02
CN1794476A (zh) 2006-06-28
US8361880B2 (en) 2013-01-29
CN100474642C (zh) 2009-04-01

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