WO2009088260A3 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
WO2009088260A3
WO2009088260A3 PCT/KR2009/000141 KR2009000141W WO2009088260A3 WO 2009088260 A3 WO2009088260 A3 WO 2009088260A3 KR 2009000141 W KR2009000141 W KR 2009000141W WO 2009088260 A3 WO2009088260 A3 WO 2009088260A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
semiconductor layer
layer
passivation layer
Prior art date
Application number
PCT/KR2009/000141
Other languages
English (en)
French (fr)
Other versions
WO2009088260A2 (ko
Inventor
배덕규
조현경
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to US12/522,247 priority Critical patent/US8399901B2/en
Priority to EP09701194.4A priority patent/EP2246908B1/en
Priority to CN200980102031.5A priority patent/CN101965647B/zh
Publication of WO2009088260A2 publication Critical patent/WO2009088260A2/ko
Publication of WO2009088260A3 publication Critical patent/WO2009088260A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 제1 도전형의 반도체층, 활성층 및 제2 도전형의 반도체층을 포함하는 발광 반도체층; 상기 발광 반도체층 상에 제1 패시베이션층; 및 상기 제1 패시베이션층 상에 탄성 계수가 2.0 내지 4.0 GPa인 제2 패시베이션층을 포함한다.
PCT/KR2009/000141 2008-01-11 2009-01-09 발광 소자 WO2009088260A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/522,247 US8399901B2 (en) 2008-01-11 2009-01-09 Light emitting device
EP09701194.4A EP2246908B1 (en) 2008-01-11 2009-01-09 Light emitting element
CN200980102031.5A CN101965647B (zh) 2008-01-11 2009-01-09 发光器件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0003387 2008-01-11
KR1020080003387A KR20090077425A (ko) 2008-01-11 2008-01-11 질화물계 발광 소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2009088260A2 WO2009088260A2 (ko) 2009-07-16
WO2009088260A3 true WO2009088260A3 (ko) 2009-09-11

Family

ID=40853627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000141 WO2009088260A2 (ko) 2008-01-11 2009-01-09 발광 소자

Country Status (5)

Country Link
US (1) US8399901B2 (ko)
EP (1) EP2246908B1 (ko)
KR (1) KR20090077425A (ko)
CN (1) CN101965647B (ko)
WO (1) WO2009088260A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101008268B1 (ko) * 2008-11-10 2011-01-13 전자부품연구원 외부양자효율 개선을 위한 수직구조 발광다이오드 및 그 제조방법
KR100999779B1 (ko) 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101028277B1 (ko) 2010-05-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛
KR101744875B1 (ko) * 2011-07-11 2017-06-09 엘지디스플레이 주식회사 유기발광소자
CN105355763A (zh) * 2015-11-04 2016-02-24 杭州士兰明芯科技有限公司 钝化保护结构、发光二极管及其制作方法
KR101809833B1 (ko) 2016-04-29 2017-12-15 고려대학교 산학협력단 투명 금속산화막/금속/투명 금속산화막 보호층을 구비한 비정질 산화물 박막 트랜지스터

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247654A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子およびその製造方法ならびに酸化物半導体発光素子を用いた半導体発光装置
KR100600373B1 (ko) * 2005-06-16 2006-07-18 엘지전자 주식회사 백색 발광 소자 및 이의 제조 방법
JP2006210491A (ja) * 2005-01-26 2006-08-10 Nichia Chem Ind Ltd 発光装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
TW576864B (en) * 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device
JP3782357B2 (ja) * 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US20060208634A1 (en) * 2002-09-11 2006-09-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
CN2645244Y (zh) * 2003-09-29 2004-09-29 上海金桥大晨光电科技有限公司 一种大功率发光二极管（led）器件
JP4297163B2 (ja) 2004-10-08 2009-07-15 パナソニック株式会社 多層回路基板の製造方法
KR100617873B1 (ko) * 2005-07-15 2006-08-28 엘지전자 주식회사 수직형 발광 다이오드 및 그 제조방법
CN100394621C (zh) * 2005-07-29 2008-06-11 东莞市福地电子材料有限公司 氮化镓基发光二极管芯片的制造方法
JP4539547B2 (ja) * 2005-12-08 2010-09-08 セイコーエプソン株式会社 発光装置、発光装置の製造方法、及び電子機器
EP2041802B1 (en) * 2006-06-23 2013-11-13 LG Electronics Inc. Light emitting diode having vertical topology and method of making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247654A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子およびその製造方法ならびに酸化物半導体発光素子を用いた半導体発光装置
JP2006210491A (ja) * 2005-01-26 2006-08-10 Nichia Chem Ind Ltd 発光装置およびその製造方法
KR100600373B1 (ko) * 2005-06-16 2006-07-18 엘지전자 주식회사 백색 발광 소자 및 이의 제조 방법

Also Published As

Publication number Publication date
EP2246908A4 (en) 2013-11-20
WO2009088260A2 (ko) 2009-07-16
CN101965647B (zh) 2012-05-30
CN101965647A (zh) 2011-02-02
US20110169041A1 (en) 2011-07-14
US8399901B2 (en) 2013-03-19
KR20090077425A (ko) 2009-07-15
EP2246908B1 (en) 2019-03-06
EP2246908A2 (en) 2010-11-03

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