WO2009093845A3 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
WO2009093845A3
WO2009093845A3 PCT/KR2009/000318 KR2009000318W WO2009093845A3 WO 2009093845 A3 WO2009093845 A3 WO 2009093845A3 KR 2009000318 W KR2009000318 W KR 2009000318W WO 2009093845 A3 WO2009093845 A3 WO 2009093845A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
layer
reflective layer
emissive
Prior art date
Application number
PCT/KR2009/000318
Other languages
English (en)
French (fr)
Other versions
WO2009093845A2 (ko
Inventor
김선경
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to CN200980102755XA priority Critical patent/CN101926011B/zh
Priority to EP09704913.4A priority patent/EP2237332B1/en
Priority to JP2010544223A priority patent/JP5888854B2/ja
Priority to US12/514,615 priority patent/US8174040B2/en
Publication of WO2009093845A2 publication Critical patent/WO2009093845A2/ko
Publication of WO2009093845A3 publication Critical patent/WO2009093845A3/ko
Priority to US13/449,097 priority patent/US20120199864A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

실시예는 발광소자에 관한 것이다. 실시예에 따른 발광소자는 반사층; 및 상기 반사층 위에 발광층을 포함하는 반도체층;을 포함하고, 상기 반사층으로부터 상기 발광층의 중심 사이의 거리는 보강간섭 조건에 해당한다.
PCT/KR2009/000318 2008-01-21 2009-01-21 발광소자 WO2009093845A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN200980102755XA CN101926011B (zh) 2008-01-21 2009-01-21 发光器件
EP09704913.4A EP2237332B1 (en) 2008-01-21 2009-01-21 Light emitting device
JP2010544223A JP5888854B2 (ja) 2008-01-21 2009-01-21 発光素子
US12/514,615 US8174040B2 (en) 2008-01-21 2009-01-21 Light emitting device
US13/449,097 US20120199864A1 (en) 2008-01-21 2012-04-17 Light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080006073A KR101459764B1 (ko) 2008-01-21 2008-01-21 질화물계 발광 소자
KR10-2008-0006073 2008-01-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/449,097 Continuation US20120199864A1 (en) 2008-01-21 2012-04-17 Light emitting device

Publications (2)

Publication Number Publication Date
WO2009093845A2 WO2009093845A2 (ko) 2009-07-30
WO2009093845A3 true WO2009093845A3 (ko) 2009-10-22

Family

ID=40901544

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000318 WO2009093845A2 (ko) 2008-01-21 2009-01-21 발광소자

Country Status (6)

Country Link
US (2) US8174040B2 (ko)
EP (1) EP2237332B1 (ko)
JP (1) JP5888854B2 (ko)
KR (1) KR101459764B1 (ko)
CN (1) CN101926011B (ko)
WO (1) WO2009093845A2 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR101100681B1 (ko) * 2009-09-10 2012-01-03 주식회사 에피밸리 반도체 발광소자
KR101007077B1 (ko) 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
KR101712094B1 (ko) 2009-11-27 2017-03-03 포항공과대학교 산학협력단 질화물갈륨계 수직 발광다이오드 및 그 제조 방법
KR100993094B1 (ko) 2010-02-01 2010-11-08 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
KR101028250B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자 및 이를 이용한 발광 소자 패키지
US8084776B2 (en) 2010-02-25 2011-12-27 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting system
KR101028220B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101047720B1 (ko) * 2010-04-23 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101701510B1 (ko) 2010-07-09 2017-02-01 엘지이노텍 주식회사 발광소자
JP2014103240A (ja) * 2012-11-20 2014-06-05 Stanley Electric Co Ltd 半導体発光素子
JP6190585B2 (ja) * 2012-12-12 2017-08-30 スタンレー電気株式会社 多重量子井戸半導体発光素子
WO2014143043A1 (en) * 2013-03-15 2014-09-18 Abbott Cardiovascular Systems, Inc. Crosslinked coatings delivered via a balloon
KR101521081B1 (ko) * 2013-10-01 2015-05-18 경희대학교 산학협력단 발광 다이오드 패키지
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
JP7316610B6 (ja) * 2018-01-26 2024-02-19 丸文株式会社 深紫外ｌｅｄ及びその製造方法
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH0537017A (ja) * 1991-07-31 1993-02-12 Daido Steel Co Ltd チヤープ状光反射層を備えた半導体装置
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Publication number Priority date Publication date Assignee Title
JPH0537017A (ja) * 1991-07-31 1993-02-12 Daido Steel Co Ltd チヤープ状光反射層を備えた半導体装置
KR20010093778A (ko) * 1999-08-20 2001-10-29 구사마 사부로 다중 파장의 발광 디바이스 및 전자 장치
JP2005051138A (ja) * 2003-07-31 2005-02-24 Oki Data Corp 半導体発光装置、ｌｅｄヘッド、画像形成装置、及び半導体発光装置の製造方法
KR20070009673A (ko) * 2004-04-14 2007-01-18 오스람 옵토 세미컨덕터스 게엠베하 발광 다이오드 칩

Also Published As

Publication number Publication date
KR20090080218A (ko) 2009-07-24
US20120199864A1 (en) 2012-08-09
CN101926011B (zh) 2013-01-23
KR101459764B1 (ko) 2014-11-12
CN101926011A (zh) 2010-12-22
EP2237332A2 (en) 2010-10-06
EP2237332A4 (en) 2011-11-30
EP2237332B1 (en) 2019-08-21
JP2011510512A (ja) 2011-03-31
US8174040B2 (en) 2012-05-08
JP5888854B2 (ja) 2016-03-22
WO2009093845A2 (ko) 2009-07-30
US20100314645A1 (en) 2010-12-16

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