DE69132764T2 - Halbleitervorrichtung mit reflektierender Schicht - Google Patents

Halbleitervorrichtung mit reflektierender Schicht

Info

Publication number
DE69132764T2
DE69132764T2 DE69132764T DE69132764T DE69132764T2 DE 69132764 T2 DE69132764 T2 DE 69132764T2 DE 69132764 T DE69132764 T DE 69132764T DE 69132764 T DE69132764 T DE 69132764T DE 69132764 T2 DE69132764 T2 DE 69132764T2
Authority
DE
Germany
Prior art keywords
semiconductor device
reflective layer
reflective
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132764T
Other languages
English (en)
Other versions
DE69132764D1 (de
Inventor
Norikatsu Yamauchi
Takashi Saka
Masumi Hirotani
Toshihiro Kato
Hiromoto Susawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Daido Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2298415A external-priority patent/JPH04171776A/ja
Priority claimed from JP2301395A external-priority patent/JPH04174567A/ja
Priority claimed from JP3045975A external-priority patent/JPH04264782A/ja
Priority claimed from JP12513991A external-priority patent/JP2973581B2/ja
Priority claimed from JP21614691A external-priority patent/JP3134382B2/ja
Application filed by Daido Steel Co Ltd filed Critical Daido Steel Co Ltd
Application granted granted Critical
Publication of DE69132764D1 publication Critical patent/DE69132764D1/de
Publication of DE69132764T2 publication Critical patent/DE69132764T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
DE69132764T 1990-11-02 1991-10-31 Halbleitervorrichtung mit reflektierender Schicht Expired - Fee Related DE69132764T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2298415A JPH04171776A (ja) 1990-11-02 1990-11-02 面発光型発光ダイオード
JP2301395A JPH04174567A (ja) 1990-11-07 1990-11-07 面発光型発光ダイオードアレイ
JP3045975A JPH04264782A (ja) 1991-02-19 1991-02-19 面発光型発光ダイオードの製造方法
JP8760291 1991-03-26
JP12513991A JP2973581B2 (ja) 1991-04-26 1991-04-26 チャープ状光反射層を備えた半導体装置
JP21614691A JP3134382B2 (ja) 1991-07-31 1991-07-31 チャープ状光反射層を備えた半導体装置

Publications (2)

Publication Number Publication Date
DE69132764D1 DE69132764D1 (de) 2001-11-15
DE69132764T2 true DE69132764T2 (de) 2002-07-11

Family

ID=27550216

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69132764T Expired - Fee Related DE69132764T2 (de) 1990-11-02 1991-10-31 Halbleitervorrichtung mit reflektierender Schicht
DE69124338T Expired - Fee Related DE69124338T2 (de) 1990-11-02 1991-10-31 Halbleitervorrichtung mit reflektierender Schicht

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69124338T Expired - Fee Related DE69124338T2 (de) 1990-11-02 1991-10-31 Halbleitervorrichtung mit reflektierender Schicht

Country Status (4)

Country Link
US (1) US5260589A (de)
EP (2) EP0724300B1 (de)
CA (1) CA2054853C (de)
DE (2) DE69132764T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406095A (en) * 1992-08-27 1995-04-11 Victor Company Of Japan, Ltd. Light emitting diode array and production method of the light emitting diode
US5710441A (en) * 1995-10-30 1998-01-20 Motorola, Inc. Microcavity LED with photon recycling
JPH10150244A (ja) * 1996-11-20 1998-06-02 Mitsubishi Electric Corp 半導体装置のシミュレーション方法
US6545264B1 (en) 1998-10-30 2003-04-08 Affymetrix, Inc. Systems and methods for high performance scanning
KR101459764B1 (ko) 2008-01-21 2014-11-12 엘지이노텍 주식회사 질화물계 발광 소자
JP2011009524A (ja) * 2009-06-26 2011-01-13 Hitachi Cable Ltd 発光素子及び発光素子の製造方法
KR20120055580A (ko) * 2009-08-03 2012-05-31 뉴포트 코포레이션 유전체 코팅을 이용한 고출력 ｌｅｄ 디바이스 아키텍처 및 제조 방법
JP2011054862A (ja) * 2009-09-04 2011-03-17 Hitachi Cable Ltd エピタキシャルウエハ、発光素子、エピタキシャルウエハの製造方法、及び発光素子の製造方法
JP2011082233A (ja) * 2009-10-05 2011-04-21 Hitachi Cable Ltd 発光素子
JP2012084692A (ja) 2010-10-12 2012-04-26 Hitachi Cable Ltd 発光素子

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2629356C2 (de) * 1976-06-30 1983-07-21 AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang Elektrooptischer Wandler zum Senden oder Empfangen
FR2538171B1 (fr) * 1982-12-21 1986-02-28 Thomson Csf Diode electroluminescente a emission de surface
JPH0669106B2 (ja) * 1983-10-04 1994-08-31 ロ−ム株式会社 Ｌｅｄ素子
JPS6081887A (ja) * 1983-10-12 1985-05-09 Rohm Co Ltd 面発光レ−ザおよびその製造方法
JPS6081888A (ja) * 1983-10-12 1985-05-09 Rohm Co Ltd 面発光レ−ザおよびその製造方法
DE3404875A1 (de) * 1984-02-11 1985-08-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
JPS61137383A (ja) * 1984-12-07 1986-06-25 Sharp Corp 光半導体装置
US4775876A (en) * 1987-09-08 1988-10-04 Motorola Inc. Photon recycling light emitting diode
JPH0793473B2 (ja) * 1987-10-06 1995-10-09 古河電気工業株式会社 光半導体素子
KR970007142B1 (ko) * 1988-01-06 1997-05-02 텔스트라 코오포레이숀 리미티드 전류 주입 레이저
JPH01200678A (ja) * 1988-02-04 1989-08-11 Daido Steel Co Ltd 発光ダイオード
JPH02170486A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 半導体発光装置
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US4991179A (en) * 1989-04-26 1991-02-05 At&T Bell Laboratories Electrically pumped vertical cavity laser
DE69025273T2 (de) * 1989-11-22 1996-07-11 Daido Steel Co Ltd Lichtemittierende Diode mit lichtreflektierender Schicht
JP2586671B2 (ja) * 1990-01-30 1997-03-05 日本電気株式会社 半導体多層膜
US5031187A (en) * 1990-02-14 1991-07-09 Bell Communications Research, Inc. Planar array of vertical-cavity, surface-emitting lasers
JP2898347B2 (ja) * 1990-04-23 1999-05-31 イーストマン・コダックジャパン株式会社 発光ダイオードアレイ
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors
JPH0442589A (ja) * 1990-06-08 1992-02-13 Fuji Electric Co Ltd 面発光半導体レーザ素子
US5170407A (en) * 1991-10-11 1992-12-08 At&T Bell Laboratories Elimination of heterojunction band discontinuities

Also Published As

Publication number Publication date
EP0724300B1 (de) 2001-10-10
DE69124338D1 (de) 1997-03-06
EP0724300A2 (de) 1996-07-31
EP0724300A3 (de) 1996-12-27
US5260589A (en) 1993-11-09
DE69124338T2 (de) 1997-07-31
CA2054853A1 (en) 1992-05-03
EP0483868A2 (de) 1992-05-06
EP0483868A3 (en) 1992-08-12
CA2054853C (en) 2000-08-08
EP0483868B1 (de) 1997-01-22
DE69132764D1 (de) 2001-11-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee