DE69227334D1 - Halbleiteranordnung in einer Packung mit spannungsabsorbierender Schicht - Google Patents
Halbleiteranordnung in einer Packung mit spannungsabsorbierender SchichtInfo
- Publication number
- DE69227334D1 DE69227334D1 DE69227334T DE69227334T DE69227334D1 DE 69227334 D1 DE69227334 D1 DE 69227334D1 DE 69227334 T DE69227334 T DE 69227334T DE 69227334 T DE69227334 T DE 69227334T DE 69227334 D1 DE69227334 D1 DE 69227334D1
- Authority
- DE
- Germany
- Prior art keywords
- package
- voltage
- absorbing layer
- semiconductor arrangement
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3057476A JPH0831561B2 (ja) | 1991-03-20 | 1991-03-20 | 半導体装置 |
JP3081451A JP2556628B2 (ja) | 1991-03-20 | 1991-03-20 | 半導体装置 |
JP3057477A JP2567998B2 (ja) | 1991-03-20 | 1991-03-20 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69227334D1 true DE69227334D1 (de) | 1998-11-26 |
DE69227334T2 DE69227334T2 (de) | 1999-07-01 |
Family
ID=27296276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69227334T Expired - Fee Related DE69227334T2 (de) | 1991-03-20 | 1992-03-17 | Halbleiteranordnung in einer Packung mit spannungsabsorbierender Schicht |
Country Status (4)
Country | Link |
---|---|
US (2) | US5406028A (de) |
EP (1) | EP0504821B1 (de) |
KR (1) | KR100234824B1 (de) |
DE (1) | DE69227334T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2708191B2 (ja) | 1988-09-20 | 1998-02-04 | 株式会社日立製作所 | 半導体装置 |
KR0158868B1 (ko) * | 1988-09-20 | 1998-12-01 | 미다 가쓰시게 | 반도체장치 |
JP3388369B2 (ja) * | 1994-01-31 | 2003-03-17 | 日本テキサス・インスツルメンツ株式会社 | 半導体パッケージ装置 |
US5572066A (en) * | 1995-01-03 | 1996-11-05 | Motorola Inc. | Lead-on-chip semiconductor device and method for its fabrication |
TW314650B (de) * | 1995-06-21 | 1997-09-01 | Oki Electric Ind Co Ltd | |
US5965902A (en) * | 1995-09-19 | 1999-10-12 | Micron Technology | Method and apparatus for testing of dielectric defects in a packaged semiconductor memory device |
US5657284A (en) | 1995-09-19 | 1997-08-12 | Micron Technology, Inc. | Apparatus and method for testing for defects between memory cells in packaged semiconductor memory devices |
US5872398A (en) | 1996-01-11 | 1999-02-16 | Micron Technology, Inc. | Reduced stress LOC assembly including cantilevered leads |
US6277225B1 (en) * | 1996-03-13 | 2001-08-21 | Micron Technology, Inc. | Stress reduction feature for LOC lead frame |
US5781486A (en) * | 1996-04-16 | 1998-07-14 | Micron Technology Corporation | Apparatus for testing redundant elements in a packaged semiconductor memory device |
US5717246A (en) | 1996-07-29 | 1998-02-10 | Micron Technology, Inc. | Hybrid frame with lead-lock tape |
US5907184A (en) * | 1998-03-25 | 1999-05-25 | Micron Technology, Inc. | Integrated circuit package electrical enhancement |
US5763945A (en) * | 1996-09-13 | 1998-06-09 | Micron Technology, Inc. | Integrated circuit package electrical enhancement with improved lead frame design |
JP3499392B2 (ja) * | 1997-02-12 | 2004-02-23 | 沖電気工業株式会社 | 半導体装置 |
US5923081A (en) | 1997-05-15 | 1999-07-13 | Micron Technology, Inc. | Compression layer on the leadframe to reduce stress defects |
US5780923A (en) | 1997-06-10 | 1998-07-14 | Micron Technology, Inc. | Modified bus bar with Kapton™ tape or insulative material on LOC packaged part |
US6580157B2 (en) | 1997-06-10 | 2003-06-17 | Micron Technology, Inc. | Assembly and method for modified bus bar with Kapton™ tape or insulative material in LOC packaged part |
JPH1187572A (ja) * | 1997-09-10 | 1999-03-30 | Oki Electric Ind Co Ltd | 樹脂封止半導体装置およびその製造方法 |
US6043558A (en) * | 1997-09-12 | 2000-03-28 | Micron Technology, Inc. | IC packages including separated signal and power supply edge connections, systems and devices including such packages, and methods of connecting such packages |
US6124150A (en) * | 1998-08-20 | 2000-09-26 | Micron Technology, Inc. | Transverse hybrid LOC package |
US6455354B1 (en) * | 1998-12-30 | 2002-09-24 | Micron Technology, Inc. | Method of fabricating tape attachment chip-on-board assemblies |
US6452845B1 (en) | 1999-01-07 | 2002-09-17 | Micron Technology, Inc. | Apparatus for testing redundant elements in a packaged semiconductor memory device |
TW594274B (en) * | 2003-10-16 | 2004-06-21 | Au Optronics Corp | Display module |
US7202112B2 (en) | 2004-10-22 | 2007-04-10 | Tessera, Inc. | Micro lead frame packages and methods of manufacturing the same |
US20200343168A1 (en) * | 2019-04-25 | 2020-10-29 | Stmicroelectronics, Inc. | Lead stabilization in semiconductor packages |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5922349A (ja) * | 1982-07-29 | 1984-02-04 | Fujitsu Ltd | 半導体装置 |
US4711700A (en) * | 1985-07-03 | 1987-12-08 | United Technologies Corporation | Method for densifying leadframe conductor spacing |
JPS62181453A (ja) * | 1987-01-23 | 1987-08-08 | Hitachi Ltd | 半導体記憶装置 |
JPH0724274B2 (ja) * | 1987-04-24 | 1995-03-15 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
JP2706077B2 (ja) * | 1988-02-12 | 1998-01-28 | 株式会社日立製作所 | 樹脂封止型半導体装置及びその製造方法 |
JP2702219B2 (ja) * | 1989-03-20 | 1998-01-21 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
KR0158868B1 (ko) * | 1988-09-20 | 1998-12-01 | 미다 가쓰시게 | 반도체장치 |
JPH02146758A (ja) * | 1988-11-28 | 1990-06-05 | Nec Corp | 樹脂封止型半導体装置 |
EP0917198B1 (de) * | 1989-06-30 | 2003-05-07 | Texas Instruments Incorporated | Verfahren zur Verpackung einer Halbleitervorrichtung |
US5053852A (en) * | 1990-07-05 | 1991-10-01 | At&T Bell Laboratories | Molded hybrid IC package and lead frame therefore |
US5155578A (en) * | 1991-04-26 | 1992-10-13 | Texas Instruments Incorporated | Bond wire configuration and injection mold for minimum wire sweep in plastic IC packages |
-
1992
- 1992-03-12 KR KR1019920004046A patent/KR100234824B1/ko not_active IP Right Cessation
- 1992-03-17 DE DE69227334T patent/DE69227334T2/de not_active Expired - Fee Related
- 1992-03-17 EP EP92104617A patent/EP0504821B1/de not_active Expired - Lifetime
-
1994
- 1994-02-18 US US08/198,389 patent/US5406028A/en not_active Expired - Lifetime
-
1995
- 1995-02-07 US US08/384,836 patent/US5466888A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR920018916A (ko) | 1992-10-22 |
DE69227334T2 (de) | 1999-07-01 |
EP0504821A2 (de) | 1992-09-23 |
EP0504821B1 (de) | 1998-10-21 |
US5406028A (en) | 1995-04-11 |
US5466888A (en) | 1995-11-14 |
KR100234824B1 (ko) | 1999-12-15 |
EP0504821A3 (en) | 1994-11-02 |
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