KR920018916A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR920018916A
KR920018916A KR1019920004046A KR920004046A KR920018916A KR 920018916 A KR920018916 A KR 920018916A KR 1019920004046 A KR1019920004046 A KR 1019920004046A KR 920004046 A KR920004046 A KR 920004046A KR 920018916 A KR920018916 A KR 920018916A
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KR
South Korea
Prior art keywords
insulating film
bar
lead
semiconductor device
chip
Prior art date
Application number
KR1019920004046A
Other languages
English (en)
Other versions
KR100234824B1 (ko
Inventor
티암 벵 림
타이 총 차이
마사즈미 야마가이
이찌로 안조
쥰이찌 아리따
구니히로 쯔보사끼
마사히로 이찌따니
에드워드 다빈
Original Assignee
가나이 쯔또무
가부시끼가이샤 히다찌세이사꾸쇼
N. 라이스 머렛트
텍사스 인스투루먼트 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3081451A external-priority patent/JP2556628B2/ja
Priority claimed from JP3057476A external-priority patent/JPH0831561B2/ja
Priority claimed from JP3057477A external-priority patent/JP2567998B2/ja
Application filed by 가나이 쯔또무, 가부시끼가이샤 히다찌세이사꾸쇼, N. 라이스 머렛트, 텍사스 인스투루먼트 인코포레이티드 filed Critical 가나이 쯔또무
Publication of KR920018916A publication Critical patent/KR920018916A/ko
Application granted granted Critical
Publication of KR100234824B1 publication Critical patent/KR100234824B1/ko

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Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 1실시예에 의한 DRAM을 포함하는 패케이지된 반도체장치의 부분단면사시도.
제5도는 제4도의 장치의 평면도.
제6도는 제4도의 Ⅵ-Ⅵ선으로 자른 단면도.

Claims (8)

  1. 주표면에 전자회로가 형성된 반도체칩, 상기 반도체칩의 주표면상에 마련된 전기적 절연막, 각각 내부리이드부와 그것에서 연장하는 외부리이드를 구비하는 여러개의 리이드 및 상기 반도체 칩, 절연막 및 내부리이드부를 봉하는 패케이지재를 포함하며, 상기 절연막은 전기적으로 절연성의 베이스막(기판)과 그 베이스막의 대향하는 제1 및 제2의 표면상에 각각 마련된 제1 및 제2의 접착제층을 구비하고, 그 제1의 접착제층은 상기 칩의 주표면과 상기 베이스막 사이에 끼어져 있고, 리이드부의 일부는 상기 절연막상에 형성되고, 상기 제2의 접착제층은 그들 내부리이드부의 일부와 절연막 사이에 끼워져 있고, 상기 절연막의 면적은 그 절연막의 상기 패케이지재 및 상기 칩에 대한 접착력을 증대하기 위해 상기 내부리이드부의 일부에 의해서 덮여지지 않은 주변부를 부여하는 면적으로 하고, 상기 절연막의 두께는 주위온도의 변동이 있었을때 패케이지된 반도체장치내에 발생할 가능성이 있는 용력을 흡수하기 위해 80~200㎛의 범위에 있는 두께로 한 패케이지된 반도체장치.
  2. 특히청구의 범위 제1항에 있어서, 패케이지된 반도체장치는 또 상기 절연막상에 형성된 공용내부리이드를 갖고, 상기 반도체칩의 주표면은 사각형이고, 상기 절연막은 빗살형상으로써 상기 칩의 주표면의 한쌍의 평행한 변과 평행한 방향으로 연장하는 바부와 그 바부에 수직인 제2의 방향으로 바부에서 연장하는 여러개의 평행한 바부를 구비하고, 상기 공용내부바는 상기 절연막의 비부상에 형성되고, 상기 여러개의 리이드의 내부리이드의 일부는 상기 빗살형상 절연막의 바부상에 형성되고, 상기 빗살형상의 절연막의 면적은 상기 리이드 및 상기 공용 내부바에 의해 덮여지지 않은 상기 접착증대용 주변부를 갖는 면적으로 되고, 상기 공용내부바는 상기 리이드의 적어도 1개의 내부리이드부와 일체인 패케이지된 반도체장치.
  3. 특허청구의 범위 제1항에 있어서, 상기 절연막의 두께는 상기 칩과 상기 리이드의 1개 사이의 용량이 1.2pF이상인 패케이지된 반도체장치.
  4. 특허청구의 범위 제1항에 있어서, 상기 리이드에 덮여지지 않는 상기 절연막의 주변부는 그들 리이드의 관련된 긴쪽방향의 가장자리에서 리이드의 연장방향과 수직인 방향으로 측정한 폭이 10~200㎛의 범위인 페케이지된 반도체장치.
  5. 특허청구의 범위 제4항에 있어서, 패케이지된 반도체장치는 또 상기 절연막상에 형성된 공용내부바를 가지고, 상기 반도체칩의 주표면은 사각형이고, 상기 절연막은 빗살형상으로써 상기 칩의 주표면의 1쌍의 평행한 변과 평행한 방향으로 연장하는 바부 및 그 바부와 수직인 제2의 방향으로 바부에서 연장하는 여러개의 평행한 바부를 구비하고, 상기 공용내부바는 상기 절연막의 바부상에 형성되고, 상기 여러개의 리이드의 내부리이드부의 일부는 상기 빗살형상의 절연막의 바부상에 형성되고, 상기 빗살형상의 절연막의 면적은 상기 리이드 및 상기 공용 내부비에 의해 덮여지지 않은 상기 접착력증대용 주변부를 갖는 면적으로 되고, 상기 공용내부바는 상기 리이드의 적어도 1개의 내부리이드부와 일체인 패케이지된 반도체장치.
  6. 주표면에 전좌회로가 형성되는 반도체칩, 주위온도의 변동이 있었을 때 패케이지된 반도체장치내에 발생할 가능성이 있는 응력을 흡수하기 위해 상기 칩의 주표면상에 형성된 응력흡수막, 상기 응력흡수막상에 마련된 전기적 절연막 및 상기 반도체칩, 절연막 및 내부리이드부를 봉하는 패케이지를 포함하며, 상기 절연막의 전기적으로 절연성의 베이스막(기판)과 그 베이스막의 대향하는 제1및 제2의 표면상에 각각 마련된 제1및 제2의 접착제층을 구비하고, 그 제1의 접착제층은 상기 응력흡수막과 상기 베이스막 사이에 끼워져 있고, 또 상기 응력흡수막은 상기 칩의 열팽창율이상으로 상기 절연막의 열팽창율이하의 열팽창계수를 갖고, 상기 외부리이드부는 패케이지재에서 돌출하고 있고, 상기 절연막의 면적은 그 절연막의 상기 패케이지재 및 상기 칩에 대한 접착력을 증대하기 위해 상기 내부리이드부의 일부에 의해서 덮여지지 않은 주변부를 부여하는 면적으로 하고, 상기 절연막의 두께는 주위온도의 변동이 있었을때 패케이지된 반도체장치내에 발생할 가능성이 있는 응력을 흡수하기 위해 80~200㎛의 범위인 두께로 한 페케이지된 반도체장치.
  7. 특허청구의 범위 제6항에 있어서, 상기 응력흡수막 및 절연막은 모두 폴리이미드수지막으로 되어 있는 패케이지된 반도체장치.
  8. 특히 청구의 범위 제6항에 있어서, 상기 응력흡수막은 상기 칩에 대해서 압축응력을 생성하는 작용을 하는 패케이지된 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920004046A 1991-03-20 1992-03-12 반도체 장치 KR100234824B1 (ko)

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JP3081451A JP2556628B2 (ja) 1991-03-20 1991-03-20 半導体装置
JP91-057477 1991-03-20
JP3057476A JPH0831561B2 (ja) 1991-03-20 1991-03-20 半導体装置
JP91-057476 1991-03-20
JP3057477A JP2567998B2 (ja) 1991-03-20 1991-03-20 半導体装置
JP91-081451 1991-03-20

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DE69227334T2 (de) 1999-07-01
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KR100234824B1 (ko) 1999-12-15
DE69227334D1 (de) 1998-11-26
EP0504821A2 (en) 1992-09-23
US5406028A (en) 1995-04-11
EP0504821A3 (en) 1994-11-02

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