KR900005631A - 박막 집적회로 제조방법 - Google Patents

박막 집적회로 제조방법

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Publication number
KR900005631A
KR900005631A KR1019890011817A KR890011817A KR900005631A KR 900005631 A KR900005631 A KR 900005631A KR 1019890011817 A KR1019890011817 A KR 1019890011817A KR 890011817 A KR890011817 A KR 890011817A KR 900005631 A KR900005631 A KR 900005631A
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integrated circuit
thickness
substrate
solar cell
layer
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KR1019890011817A
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English (en)
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폴 웬즈 로버트
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도날드 밀러 셀
미네소타 마이닝 앤드 매뉴팩츄어링 컴패니
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Application filed by 도날드 밀러 셀, 미네소타 마이닝 앤드 매뉴팩츄어링 컴패니 filed Critical 도날드 밀러 셀
Publication of KR900005631A publication Critical patent/KR900005631A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음

Description

박막 집적회로 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따라 제조된 태양전지 테이프의 스트립 예시도, 제 2 도는 본 발명에 따라 제조된 태양 전지 예시도,

Claims (14)

  1. 가요성 기판. 기판상의 반도체 물질층, 및 기판반대편의 반도체 물질상의 봉합층을 갖는 형태의 집적회로를 제조하기 위한 방법에 있어서, 집적회로가 휘어지는 경우 반도체 물질층상의 응력 손실을 막기 위해 집적회로의 중립면이 반도체 물질층 근처에 놓이도록 함으로써 기판 및 봉합층이 갖는 탄성 모듈의 함수에 따라 가요성 기판과 봉합충의 두께를 선택하는 단계를 포함하는 것을 특징으로 하는 집적회로 제조방법.
  2. 제1항에 있어서, 집적회로의 중립면이 반도체 물질층으로 부터 집적 회로 전체 두께의 20%이내에 놓이도록 함으로써 가요성 기판과 봉합층의 두께를 선택하는 단계를 포함하는 것을 특징으로 하는 집적 회로 제조방법.
  3. 제1항에 있어서, 집적회로의 중립면이 반도체 물질층으로 부터 집적회로 전체 두께의 5% 이내에 놓이도록 함으로써 가요성 기판과 봉합층의 두께를 선택하는 단계를 포함하는 것을 특징으로 하는 집적회로 제조방법.
  4. 청구범위 제1항의 방법에 따라 제조된 집적회로.
  5. 가요성 중합체 기판상에 박막 광전 회로를 융착하고, 봉합층으로 광전회로를 봉합하며, 광전회로 반대편 기판에 점착층을 적용하는 태양 전지 테이프를 제조하기 위한 방법에 있어서, 집적회로가 휘어지는 경우 광전 회로 상의 응력 손실을 막기 위해 태앙 전지 테이프의 중립면이 광전회로 근처에 놓이도록 함으로써 이들 각각의 탄성 모듈함수에 따라 기판, 봉합층 및 점착층의 두께를 선택하는 단계를 포함하는 것을 특징으로 하는 태양전지 테이프 제조방법.
  6. 제5항에 있어서, 태양전지 테이프의 중립면이 광전회로로부터 태양전지 테이프 전체 두께의 20% 이내에 놓이도록 함으로써 가요성 기판, 봉합층 및 점착층의 두께를 선택하는 단계를 포함하는 것을 특징으로 하는 태양 전지 테이프 제조방법.
  7. 제5항에 있어서, 태양전지 테이프의 중립면이 광전회로로 부터 태양전지 테이프 전체 두께의 5% 이내에 놓이도록 함으로써 가요성 기판, 봉합층 및 점착층의 두께를 선택하는 단계를 포함하는 것을 특징으로 하는 태양 전지 테이프 제조방법.
  8. 청구범위 제5항의 방법에 따라 제조된 태양전지 테이프.
  9. 탄성모듈로 특징지어지는 두께와 기판상의 반도체 물질층을 가지는 가요성기판과 ; 탄성모듈로 특징지어지는 두께를 가지고 상기 판 반대편 반도체 물질상에 놓이는 봉합층을 포함하는 가요성 집적 회로에 있어서, 집적회로가 휘어지는 경우 반도체 물질층상의 응력 손실을 막기 위해 집적회로의 중립면이 반도체 물질층 근처에 놓이도록 함으로써 기판 및 봉합층의 탄성 모듈에 따라 기판 및 봉합층의 두께를 선택하는 것을 특징으로 하는 가요성 집적회로.
  10. 제9항에 있어서, 중립면이 반도체 물질층으로 부터 집적회로 전체 두께의 0% 이내에 놓이도록 하는 것을 특징으로 하는 집적회로
  11. 제9항에 있어서, 집적회로의 중립면이 반도체 물질층으로 부터 집적회로 전체 두께의 5% 이내에 놓이도록 하는 것을 특징으로 하는 집적 회로,
  12. 탄성모듈에 의해 특징지어지는 두께를 가지는 가요성 중합 기판과 ; 기판상의 박막 광전회로와 ; 탄성모듈에 의해 특징지어지는 두께를 가지고 광전회로를 봉합하기 위한 봉합층과 ; 광전회로 반대편 기판상의 탄성모듈로 특징지어지는 두께를 갖는 점착층을 포함하는 태양전지테이프의 스트립에 있어서, 태양전지 테이프가 휘어지는 경우 광전회로상의 응력 손실을 막기 위해 집적회로의 중립면이 광전회로 근처에 놓이도록 함으로써 기판, 봉합층 및 점착층의 탄성모듈에 따라 두께를 선택하는 것을 특징으로 하는 태양전지 테이프 스트립
  13. 제12항에 있어서, 상기 중립면이 광전회로로 부터 테이프 전체 두께의 0% 이내에 놓이는 것을 특징으로 하는 태양전지 테이프 스트립.
  14. 제12항에 있어서, 상기 중립면이 광전회로로 부터 테이프 전체 길이의 5% 이내에 놓이든 것을 특징으로 하는 태양전지 테이프 스트립
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890011817A 1988-09-01 1989-08-19 박막 집적회로 제조방법 KR900005631A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/239,513 US4888061A (en) 1988-09-01 1988-09-01 Thin-film solar cells resistant to damage during flexion
US239513 1988-09-01

Publications (1)

Publication Number Publication Date
KR900005631A true KR900005631A (ko) 1990-04-14

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Country Status (9)

Country Link
US (1) US4888061A (ko)
EP (1) EP0366236B1 (ko)
JP (1) JPH02113584A (ko)
KR (1) KR900005631A (ko)
AU (1) AU614166B2 (ko)
BR (1) BR8904385A (ko)
DE (1) DE68909734T2 (ko)
IL (1) IL91239A (ko)
MY (1) MY104172A (ko)

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DE68909734T2 (de) 1994-04-28
US4888061A (en) 1989-12-19
IL91239A0 (en) 1990-03-19
EP0366236A3 (en) 1990-11-07
EP0366236B1 (en) 1993-10-06
AU3915689A (en) 1990-03-08
AU614166B2 (en) 1991-08-22
JPH02113584A (ja) 1990-04-25
BR8904385A (pt) 1990-04-17
EP0366236A2 (en) 1990-05-02
DE68909734D1 (de) 1993-11-11
IL91239A (en) 1992-11-15
MY104172A (en) 1994-02-28

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