DE69329603T2 - Halbleitervorrichtung mit einer ITO-Schicht - Google Patents

Halbleitervorrichtung mit einer ITO-Schicht

Info

Publication number
DE69329603T2
DE69329603T2 DE69329603T DE69329603T DE69329603T2 DE 69329603 T2 DE69329603 T2 DE 69329603T2 DE 69329603 T DE69329603 T DE 69329603T DE 69329603 T DE69329603 T DE 69329603T DE 69329603 T2 DE69329603 T2 DE 69329603T2
Authority
DE
Germany
Prior art keywords
semiconductor device
ito layer
ito
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69329603T
Other languages
English (en)
Other versions
DE69329603D1 (de
Inventor
Masaru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35855992A external-priority patent/JPH05303116A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69329603D1 publication Critical patent/DE69329603D1/de
Application granted granted Critical
Publication of DE69329603T2 publication Critical patent/DE69329603T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate
DE69329603T 1992-02-28 1993-02-26 Halbleitervorrichtung mit einer ITO-Schicht Expired - Lifetime DE69329603T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7587992 1992-02-28
JP35855992A JPH05303116A (ja) 1992-02-28 1992-12-28 半導体装置

Publications (2)

Publication Number Publication Date
DE69329603D1 DE69329603D1 (de) 2000-12-07
DE69329603T2 true DE69329603T2 (de) 2001-05-10

Family

ID=26417045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329603T Expired - Lifetime DE69329603T2 (de) 1992-02-28 1993-02-26 Halbleitervorrichtung mit einer ITO-Schicht

Country Status (2)

Country Link
EP (1) EP0558055B1 (de)
DE (1) DE69329603T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07221174A (ja) * 1993-12-10 1995-08-18 Canon Inc 半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03502148A (ja) * 1987-10-15 1991-05-16 ステムコー　コーポレーション 低ノイズ光検出及びそのための光検出器
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display

Also Published As

Publication number Publication date
DE69329603D1 (de) 2000-12-07
EP0558055A1 (de) 1993-09-01
EP0558055B1 (de) 2000-11-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition