DE69218753T2 - Halbleiteranordnung mit Feldplatten - Google Patents

Halbleiteranordnung mit Feldplatten

Info

Publication number
DE69218753T2
DE69218753T2 DE69218753T DE69218753T DE69218753T2 DE 69218753 T2 DE69218753 T2 DE 69218753T2 DE 69218753 T DE69218753 T DE 69218753T DE 69218753 T DE69218753 T DE 69218753T DE 69218753 T2 DE69218753 T2 DE 69218753T2
Authority
DE
Germany
Prior art keywords
semiconductor device
field plates
plates
field
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69218753T
Other languages
English (en)
Other versions
DE69218753D1 (de
Inventor
Tomohide Terashima
Kazumasa Satsuma
Masao Yoshizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69218753D1 publication Critical patent/DE69218753D1/de
Application granted granted Critical
Publication of DE69218753T2 publication Critical patent/DE69218753T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
DE69218753T 1992-01-16 1992-10-12 Halbleiteranordnung mit Feldplatten Expired - Lifetime DE69218753T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4005785A JP2739004B2 (ja) 1992-01-16 1992-01-16 半導体装置

Publications (2)

Publication Number Publication Date
DE69218753D1 DE69218753D1 (de) 1997-05-07
DE69218753T2 true DE69218753T2 (de) 1997-08-14

Family

ID=11620763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218753T Expired - Lifetime DE69218753T2 (de) 1992-01-16 1992-10-12 Halbleiteranordnung mit Feldplatten

Country Status (4)

Country Link
US (1) US5455439A (de)
EP (1) EP0551712B1 (de)
JP (1) JP2739004B2 (de)
DE (1) DE69218753T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2159044A1 (en) * 1994-09-26 1996-03-27 Falko-Guenter Falkner Method of quantitating nucleic acids
JP3846796B2 (ja) * 2002-11-28 2006-11-15 三菱電機株式会社 半導体装置
JP4094984B2 (ja) * 2003-04-24 2008-06-04 三菱電機株式会社 半導体装置
JP4326835B2 (ja) 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
JP4593126B2 (ja) 2004-02-18 2010-12-08 三菱電機株式会社 半導体装置
JP4667756B2 (ja) * 2004-03-03 2011-04-13 三菱電機株式会社 半導体装置
JP4973238B2 (ja) * 2007-02-28 2012-07-11 三菱電機株式会社 半導体装置
JP2010157582A (ja) * 2008-12-26 2010-07-15 Rohm Co Ltd 半導体装置
JP5391447B2 (ja) 2009-04-06 2014-01-15 三菱電機株式会社 半導体装置およびその製造方法
JP5376365B2 (ja) 2009-04-16 2013-12-25 三菱電機株式会社 半導体装置
US8618627B2 (en) 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5172907B2 (ja) * 2010-07-26 2013-03-27 三菱電機株式会社 半導体装置
US20120292740A1 (en) * 2011-05-19 2012-11-22 Macronix International Co., Ltd. High voltage resistance semiconductor device and method of manufacturing a high voltage resistance semiconductor device
CN102842577B (zh) * 2011-06-20 2015-09-09 旺宏电子股份有限公司 高压电阻半导体装置与制造高压电阻半导体装置的方法
JP5640969B2 (ja) 2011-12-26 2014-12-17 三菱電機株式会社 半導体素子
JP2014204038A (ja) 2013-04-08 2014-10-27 三菱電機株式会社 半導体装置及びその製造方法
CN105789051A (zh) * 2014-12-24 2016-07-20 北大方正集团有限公司 一种ldmos晶体管及制作方法
CN105070756B (zh) * 2015-08-18 2018-06-19 上海华虹宏力半导体制造有限公司 超高压ldmos器件结构
US10497698B2 (en) 2016-06-10 2019-12-03 Mitsubishi Electric Corporation Semiconductor circuit and semiconductor device
WO2019202760A1 (ja) 2018-04-16 2019-10-24 パナソニックＩｐマネジメント株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379305A (en) * 1980-05-29 1983-04-05 General Instrument Corp. Mesh gate V-MOS power FET
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS62173764A (ja) * 1986-01-27 1987-07-30 Matsushita Electric Works Ltd 半導体装置
JPS6327044A (ja) * 1986-07-18 1988-02-04 Nec Corp 半導体装置
JP2638969B2 (ja) * 1988-08-08 1997-08-06 凸版印刷株式会社 スピンコート方法
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same
JPH0783048B2 (ja) * 1989-11-22 1995-09-06 三菱電機株式会社 半導体装置における電界集中防止構造およびその形成方法
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus
JP2556175B2 (ja) * 1990-06-12 1996-11-20 三菱電機株式会社 半導体装置における電界集中防止構造

Also Published As

Publication number Publication date
JPH05190693A (ja) 1993-07-30
US5455439A (en) 1995-10-03
JP2739004B2 (ja) 1998-04-08
EP0551712A3 (en) 1993-09-29
DE69218753D1 (de) 1997-05-07
EP0551712B1 (de) 1997-04-02
EP0551712A2 (de) 1993-07-21

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