JP4973238B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4973238B2 JP4973238B2 JP2007049445A JP2007049445A JP4973238B2 JP 4973238 B2 JP4973238 B2 JP 4973238B2 JP 2007049445 A JP2007049445 A JP 2007049445A JP 2007049445 A JP2007049445 A JP 2007049445A JP 4973238 B2 JP4973238 B2 JP 4973238B2
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000012535 impurity Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 12
- 230000015556 catabolic process Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
図1は、本発明の実施の形態1に係る半導体装置を用いたHVICを示すブロック図である。低電位ロジック回路100と、高電位ロジック回路101と、本発明の実施の形態1に係る半導体装置であるnチャネル形のMOSトランジスタ102と、抵抗103とを備えている。
図5は本発明の実施の形態2に係る半導体装置を示す平面図であり、図6は図5のC−C´における断面図である。
図7は本発明の実施の形態3に係る半導体装置を示す平面図であり、図8は図7のD−D´における断面図である。
図9は本発明の実施の形態4に係る半導体装置を示す平面図であり、図10は図9のE−E´における断面図である。
12 半導体層
13 ドレイン領域
17 不純物領域
18 ソース領域
19 フィールド酸化膜(第1絶縁膜)
20 ゲート電極
21 ゲート酸化膜
22a−22d,23 第1フィールドプレート
24 絶縁膜(第2絶縁膜)
25 ソース電極
26 ドレイン電極
27a−27e 第2フィールドプレート
28 高圧配線
29 シールド電極
Claims (6)
- 第1導電型の半導体基板と、
前記半導体基板上に設けられた第2導電型の半導体層と、
前記半導体層の上面内に設けられ、前記半導体層よりも不純物濃度が高い第2導電型のドレイン領域と、
前記ドレイン領域に電気的に接続されたドレイン電極と、
前記半導体層の上面内に設けられた第1導電型の不純物領域と、
前記不純物領域の上面内に設けられた第2導電型のソース領域と、
前記不純物領域と前記ドレイン領域との間の前記半導体層上に設けられた第1絶縁膜と、
前記第1絶縁膜上において、前記ソース領域から前記ドレイン領域へと向かう方向に互いに離れて設けられた複数の第1フィールドプレートと、
前記ソース領域と前記半導体層とで挟まれた前記不純物領域の端部をゲート酸化膜を介して覆うゲート電極と、
前記複数の第1フィールドプレート及び前記ゲート電極を覆う第2絶縁膜と、
前記第2絶縁膜上において、それぞれ前記複数の第1フィールドプレートの間隙の上方に設けられた複数の第2フィールドプレートと、
前記第2絶縁膜上において前記複数の第2フィールドプレートとは離間して設けられ、前記複数の第1フィールドプレートの上方を通って、前記ドレイン電極に電気的に接続された高圧配線と、
最もソース側に位置する前記第1フィールドプレートと前記高圧配線との間に設けられたシールド電極とを有することを特徴とする半導体装置。 - 前記シールド電極の電位は、前記複数の第1フィールドプレートの電位より低いことを特徴とする請求項1に記載の半導体装置。
- 前記シールド電極は、接地されていることを特徴とする請求項2に記載の半導体装置。
- 前記シールド電極は、前記ゲート電極に接続されていることを特徴とする請求項2に記載の半導体装置。
- 前記シールド電極は、前記複数の第1フィールドプレートよりも低電位側に前記高圧配線に沿って引き回されていることを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
- 前記シールド電極は、最もソース側に位置する前記第1フィールドプレートの一部のみと重なっていることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007049445A JP4973238B2 (ja) | 2007-02-28 | 2007-02-28 | 半導体装置 |
US11/782,390 US7973382B2 (en) | 2007-02-28 | 2007-07-24 | Semiconductor device |
Applications Claiming Priority (1)
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---|---|---|---|
JP2007049445A JP4973238B2 (ja) | 2007-02-28 | 2007-02-28 | 半導体装置 |
Publications (2)
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JP2008218458A JP2008218458A (ja) | 2008-09-18 |
JP4973238B2 true JP4973238B2 (ja) | 2012-07-11 |
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JP2007049445A Active JP4973238B2 (ja) | 2007-02-28 | 2007-02-28 | 半導体装置 |
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US (1) | US7973382B2 (ja) |
JP (1) | JP4973238B2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090096039A1 (en) * | 2007-10-10 | 2009-04-16 | United Microelectronics Corp. | High-voltage device and manufacturing method of top layer in high-voltage device |
JP4602465B2 (ja) * | 2008-12-04 | 2010-12-22 | 株式会社東芝 | 半導体装置 |
JP5391447B2 (ja) | 2009-04-06 | 2014-01-15 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2012109492A (ja) * | 2010-11-19 | 2012-06-07 | Sanken Electric Co Ltd | 化合物半導体装置 |
US8680616B2 (en) | 2010-12-03 | 2014-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | High side gate driver device |
US8629513B2 (en) * | 2011-01-14 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | HV interconnection solution using floating conductors |
US20120292740A1 (en) * | 2011-05-19 | 2012-11-22 | Macronix International Co., Ltd. | High voltage resistance semiconductor device and method of manufacturing a high voltage resistance semiconductor device |
US8803232B2 (en) * | 2011-05-29 | 2014-08-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages |
CN102842577B (zh) * | 2011-06-20 | 2015-09-09 | 旺宏电子股份有限公司 | 高压电阻半导体装置与制造高压电阻半导体装置的方法 |
JP5979836B2 (ja) * | 2011-09-09 | 2016-08-31 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
CN103681662B (zh) * | 2012-09-04 | 2017-07-21 | 旺宏电子股份有限公司 | 半导体结构及其制造方法与操作方法 |
TWI550885B (zh) * | 2012-10-31 | 2016-09-21 | 天鈺科技股份有限公司 | 半導體電容及具有該半導體電容的半導體裝置 |
US9859399B2 (en) * | 2013-11-05 | 2018-01-02 | Vanguard International Semiconductor Corporation | Lateral diffused semiconductor device with ring field plate |
CN104659093A (zh) * | 2013-11-21 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Nldmos器件结构 |
CN104167435B (zh) * | 2014-08-08 | 2017-01-11 | 无锡市晶源微电子有限公司 | 一种带分压环结构的片上高压电阻 |
JP6492903B2 (ja) * | 2015-04-08 | 2019-04-03 | 富士電機株式会社 | 半導体装置 |
JP6550674B2 (ja) * | 2015-08-13 | 2019-07-31 | ローム株式会社 | 半導体装置 |
CN105070756B (zh) * | 2015-08-18 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | 超高压ldmos器件结构 |
JP6910907B2 (ja) * | 2017-09-25 | 2021-07-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN108847422B (zh) * | 2018-06-15 | 2021-08-06 | 济南大学 | 带有耦合场板的高电子迁移率晶体管 |
US10892360B2 (en) * | 2017-11-27 | 2021-01-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with high voltage device |
WO2019202760A1 (ja) * | 2018-04-16 | 2019-10-24 | パナソニックIpマネジメント株式会社 | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0779157B2 (ja) | 1988-09-03 | 1995-08-23 | 日本電気株式会社 | 半導体装置 |
JPH0349265A (ja) | 1989-07-17 | 1991-03-04 | Fuji Electric Co Ltd | 電界効果トランジスタ |
JPH03235367A (ja) | 1990-02-13 | 1991-10-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JP2739004B2 (ja) * | 1992-01-16 | 1998-04-08 | 三菱電機株式会社 | 半導体装置 |
JP3207615B2 (ja) | 1992-06-24 | 2001-09-10 | 株式会社東芝 | 半導体装置 |
JP3217488B2 (ja) * | 1992-08-28 | 2001-10-09 | 株式会社リコー | 高耐圧半導体装置 |
JP3235367B2 (ja) | 1994-10-11 | 2001-12-04 | 株式会社村田製作所 | アンテナ装置 |
JP3958404B2 (ja) * | 1997-06-06 | 2007-08-15 | 三菱電機株式会社 | 横型高耐圧素子を有する半導体装置 |
JP3905981B2 (ja) * | 1998-06-30 | 2007-04-18 | 株式会社東芝 | 高耐圧半導体装置 |
JP4610786B2 (ja) * | 2001-02-20 | 2011-01-12 | 三菱電機株式会社 | 半導体装置 |
JP3846796B2 (ja) | 2002-11-28 | 2006-11-15 | 三菱電機株式会社 | 半導体装置 |
JP2005005443A (ja) * | 2003-06-11 | 2005-01-06 | Toshiba Corp | 高耐圧半導体装置 |
JP4667756B2 (ja) * | 2004-03-03 | 2011-04-13 | 三菱電機株式会社 | 半導体装置 |
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2007
- 2007-02-28 JP JP2007049445A patent/JP4973238B2/ja active Active
- 2007-07-24 US US11/782,390 patent/US7973382B2/en active Active
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US7973382B2 (en) | 2011-07-05 |
JP2008218458A (ja) | 2008-09-18 |
US20080203496A1 (en) | 2008-08-28 |
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