DE69429701T2 - Halbleiterschichtstruktur mit verteilter Verspannung - Google Patents
Halbleiterschichtstruktur mit verteilter VerspannungInfo
- Publication number
- DE69429701T2 DE69429701T2 DE69429701T DE69429701T DE69429701T2 DE 69429701 T2 DE69429701 T2 DE 69429701T2 DE 69429701 T DE69429701 T DE 69429701T DE 69429701 T DE69429701 T DE 69429701T DE 69429701 T2 DE69429701 T2 DE 69429701T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- layer structure
- distributed stress
- stress
- distributed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27132993A JP3226069B2 (ja) | 1993-10-04 | 1993-10-04 | 半導体積層構造および半導体光素子 |
JP27132993 | 1993-10-04 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69429701D1 DE69429701D1 (de) | 2002-03-14 |
DE69429701T2 true DE69429701T2 (de) | 2002-11-21 |
DE69429701T3 DE69429701T3 (de) | 2006-08-31 |
Family
ID=17498540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69429701T Expired - Lifetime DE69429701T3 (de) | 1993-10-04 | 1994-09-30 | Halbleiterschichtstruktur mit verteilter Verspannung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5550393A (de) |
EP (1) | EP0646951B2 (de) |
JP (1) | JP3226069B2 (de) |
DE (1) | DE69429701T3 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3080889B2 (ja) * | 1996-09-02 | 2000-08-28 | 日本電気株式会社 | 半導体レーザ |
JP3672062B2 (ja) * | 1997-07-16 | 2005-07-13 | 三菱電機株式会社 | 半導体レーザ,及びその製造方法 |
US6332835B1 (en) | 1997-11-20 | 2001-12-25 | Canon Kabushiki Kaisha | Polishing apparatus with transfer arm for moving polished object without drying it |
FR2813449B1 (fr) * | 2000-08-22 | 2003-01-17 | Cit Alcatel | Dispositif optique amplificateur |
JP2005129696A (ja) * | 2003-10-23 | 2005-05-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP5003527B2 (ja) * | 2008-02-22 | 2012-08-15 | 住友電気工業株式会社 | Iii族窒化物発光素子、及びiii族窒化物系半導体発光素子を作製する方法 |
US7967995B2 (en) * | 2008-03-31 | 2011-06-28 | Tokyo Electron Limited | Multi-layer/multi-input/multi-output (MLMIMO) models and method for using |
JP6158591B2 (ja) * | 2013-05-22 | 2017-07-05 | 株式会社デンソー | 半導体レーザ |
JP6158590B2 (ja) * | 2013-05-22 | 2017-07-05 | 株式会社デンソー | 半導体レーザ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4916708A (en) * | 1989-06-26 | 1990-04-10 | Eastman Kodak Company | Semiconductor light-emitting devices |
US5021360A (en) * | 1989-09-25 | 1991-06-04 | Gte Laboratories Incorporated | Method of farbicating highly lattice mismatched quantum well structures |
JP2873856B2 (ja) * | 1990-04-03 | 1999-03-24 | キヤノン株式会社 | 光増幅器 |
US5331410A (en) * | 1991-04-26 | 1994-07-19 | Sumitomo Electric Industries, Ltd. | Field effect transistor having a sandwiched channel layer |
US5159603A (en) * | 1991-06-05 | 1992-10-27 | United States Of America As Represented By The Administrator, National Aeronautics And Space Administration | Quantum well, beam deflecting surface emitting lasers |
-
1993
- 1993-10-04 JP JP27132993A patent/JP3226069B2/ja not_active Expired - Fee Related
-
1994
- 1994-09-30 DE DE69429701T patent/DE69429701T3/de not_active Expired - Lifetime
- 1994-09-30 EP EP94115459A patent/EP0646951B2/de not_active Expired - Lifetime
- 1994-10-03 US US08/316,451 patent/US5550393A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69429701T3 (de) | 2006-08-31 |
EP0646951A2 (de) | 1995-04-05 |
EP0646951B2 (de) | 2006-01-04 |
EP0646951B1 (de) | 2002-01-23 |
JP3226069B2 (ja) | 2001-11-05 |
JPH07106711A (ja) | 1995-04-21 |
US5550393A (en) | 1996-08-27 |
DE69429701D1 (de) | 2002-03-14 |
EP0646951A3 (de) | 1997-01-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings |