WO2008123270A1 - 半導体装置、半導体装置の製造方法及び表示装置 - Google Patents

半導体装置、半導体装置の製造方法及び表示装置 Download PDF

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Publication number
WO2008123270A1
WO2008123270A1 PCT/JP2008/055633 JP2008055633W WO2008123270A1 WO 2008123270 A1 WO2008123270 A1 WO 2008123270A1 JP 2008055633 W JP2008055633 W JP 2008055633W WO 2008123270 A1 WO2008123270 A1 WO 2008123270A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
display
manufacturing
manufacturing semiconductor
semiconductor layer
Prior art date
Application number
PCT/JP2008/055633
Other languages
English (en)
French (fr)
Inventor
Koki Yano
Hajime Nakanotani
Chihaya Adachi
Original Assignee
Idemitsu Kosan Co., Ltd.
Kyushu University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co., Ltd., Kyushu University filed Critical Idemitsu Kosan Co., Ltd.
Priority to US12/593,030 priority Critical patent/US20100140599A1/en
Publication of WO2008123270A1 publication Critical patent/WO2008123270A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/82—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

　有機半導体層１０及び酸化物半導体層１１を備え発光する。
PCT/JP2008/055633 2007-03-26 2008-03-26 半導体装置、半導体装置の製造方法及び表示装置 WO2008123270A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/593,030 US20100140599A1 (en) 2007-03-26 2008-03-26 Semiconductor device, method for manufacturing semiconductor device, and display

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-078998 2007-03-26
JP2007078998A JP5465825B2 (ja) 2007-03-26 2007-03-26 半導体装置、半導体装置の製造方法及び表示装置

Publications (1)

Publication Number Publication Date
WO2008123270A1 true WO2008123270A1 (ja) 2008-10-16

Family

ID=39830760

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055633 WO2008123270A1 (ja) 2007-03-26 2008-03-26 半導体装置、半導体装置の製造方法及び表示装置

Country Status (4)

Country Link
US (1) US20100140599A1 (ja)
JP (1) JP5465825B2 (ja)
TW (1) TWI463716B (ja)
WO (1) WO2008123270A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011109032A (ja) * 2009-11-20 2011-06-02 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8945982B2 (en) 2010-04-23 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2015062250A (ja) * 2014-11-27 2015-04-02 株式会社半導体エネルギー研究所 トランジスタ
CN113054117A (zh) * 2019-12-28 2021-06-29 Tcl集团股份有限公司 发光二极管及其制备方法

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US7998372B2 (en) * 2005-11-18 2011-08-16 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
JP2009206508A (ja) 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
TWI633605B (zh) * 2008-10-31 2018-08-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5607349B2 (ja) * 2008-12-26 2014-10-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI419328B (zh) * 2009-06-12 2013-12-11 Ind Tech Res Inst 主動層堆疊結構及其製造方法及其應用
US9805641B2 (en) 2009-09-04 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
CN112242173B (zh) * 2009-10-09 2024-08-20 株式会社半导体能源研究所 半导体器件
WO2011043170A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101930230B1 (ko) 2009-11-06 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR101750982B1 (ko) 2009-11-06 2017-06-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2011068025A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
KR101857693B1 (ko) 2009-12-04 2018-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011074407A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102725841B (zh) * 2010-01-15 2016-10-05 株式会社半导体能源研究所 半导体器件
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101878206B1 (ko) * 2010-03-05 2018-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막의 제작 방법 및 트랜지스터의 제작 방법
KR20140036279A (ko) * 2011-06-01 2014-03-25 메르크 파텐트 게엠베하 하이브리드 양극성 ｔｆｔ들
US8901547B2 (en) * 2012-08-25 2014-12-02 Polyera Corporation Stacked structure organic light-emitting transistors
US20140062849A1 (en) * 2012-09-05 2014-03-06 Tagnetics, Inc. Cmos-compatible display system and method
KR102608954B1 (ko) * 2016-09-30 2023-12-05 삼성디스플레이 주식회사 표시 장치
WO2018163013A1 (ja) * 2017-03-07 2018-09-13 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN113272942A (zh) * 2019-02-21 2021-08-17 东丽株式会社 场效应晶体管、其制造方法及使用其的无线通信装置

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JP2005209455A (ja) * 2004-01-21 2005-08-04 Kyoto Univ 有機半導体装置、ならびにそれを用いた表示装置および撮像装置
JP2005293980A (ja) * 2004-03-31 2005-10-20 Junji Kido 発光トランジスタ
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JP2006100857A (ja) * 2005-12-09 2006-04-13 Idemitsu Kosan Co Ltd 無機非縮退半導体層およびその製造方法
JP2006128139A (ja) * 2005-12-15 2006-05-18 Idemitsu Kosan Co Ltd 半導体薄膜、半導体薄膜の積層体、半導体薄膜の製造方法
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JP4220669B2 (ja) * 2000-12-26 2009-02-04 出光興産株式会社 有機エレクトロルミネッセンス素子
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JP2005293980A (ja) * 2004-03-31 2005-10-20 Junji Kido 発光トランジスタ
WO2006025274A1 (ja) * 2004-08-30 2006-03-09 Kyoto University 有機半導体発光装置およびそれを用いた表示装置
JP2006324655A (ja) * 2005-04-22 2006-11-30 Semiconductor Energy Lab Co Ltd 半導体素子、有機トランジスタ、発光装置及び電気機器
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JP2006100857A (ja) * 2005-12-09 2006-04-13 Idemitsu Kosan Co Ltd 無機非縮退半導体層およびその製造方法
JP2006128139A (ja) * 2005-12-15 2006-05-18 Idemitsu Kosan Co Ltd 半導体薄膜、半導体薄膜の積層体、半導体薄膜の製造方法
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011109032A (ja) * 2009-11-20 2011-06-02 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
US8945982B2 (en) 2010-04-23 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9390918B2 (en) 2010-04-23 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9978878B2 (en) 2010-04-23 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8790960B2 (en) 2010-04-28 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9449852B2 (en) 2010-04-28 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2015062250A (ja) * 2014-11-27 2015-04-02 株式会社半導体エネルギー研究所 トランジスタ
CN113054117A (zh) * 2019-12-28 2021-06-29 Tcl集团股份有限公司 发光二极管及其制备方法
CN113054117B (zh) * 2019-12-28 2022-06-24 Tcl科技集团股份有限公司 发光二极管及其制备方法

Also Published As

Publication number Publication date
TWI463716B (zh) 2014-12-01
JP2008243929A (ja) 2008-10-09
JP5465825B2 (ja) 2014-04-09
US20100140599A1 (en) 2010-06-10
TW200908410A (en) 2009-02-16

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