JP4818732B2 - 窒化物半導体素子の製造方法 - Google Patents
窒化物半導体素子の製造方法 Download PDFInfo
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- JP4818732B2 JP4818732B2 JP2006006437A JP2006006437A JP4818732B2 JP 4818732 B2 JP4818732 B2 JP 4818732B2 JP 2006006437 A JP2006006437 A JP 2006006437A JP 2006006437 A JP2006006437 A JP 2006006437A JP 4818732 B2 JP4818732 B2 JP 4818732B2
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- 239000004065 semiconductor Substances 0.000 title claims description 130
- 150000004767 nitrides Chemical class 0.000 title claims description 119
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 130
- 238000000034 method Methods 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000005496 eutectics Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910007637 SnAg Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Microelectronics & Electronic Packaging (AREA)
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Description
、マスク54は第1のエピタキシャルGaN層52の表面の一部を覆うように設けられている。こうすると、第1のエピタキシャルGaN層52が種層として作用し、第2のエピタキシャルGaN層57がマスク54中のウィンドウ(開口部)を満たした後に、第1のエピタキシャルGaN層52およびマスク54上に連続的な第2のエピタキシャルGaN層57が形成される。
本発明にかかる窒化物半導体素子の製造方法の一例を以下に説明する。まず、図1を参照して、第1の基板10として厚さ430μmのサファイア基板を用いて、第1の基板10の表面に、ダイヤモンドスクライバーを用いて、けがき線を入れることにより、350μmのピッチで幅が50μmで深さが5μmの溝15を形成する。
本発明にかかる窒化物半導体素子の製造方法の一参考例を以下に説明する。図4を参照して、実施例1と同様に、第1の基板10の表面にけがき線を入れることにより溝15を形成した後、バッファ層11、n型窒化物半導体層12、発光層13およびp型窒化物半導体層14を順次形成する。次に、p型窒化物半導体層14上に透光性電極41としてPd膜を7nm形成し、その上にパッド電極42としてAu膜を300nm形成する。次に、透光性電極41上に開口部を有するレジストを形成し、開口部下の透光性電極41(Pd膜)をエッチングにより除去した後、さらにこの開口部下に位置するp型窒化物半導体層14、発光層13、n型窒化物半導体層12の一部をドライエッチングして、n型窒化物半導体層12の表面を露出させる。露出したn型窒化物半導体層12の表面にn側電極43としてHf膜とAl膜との積層膜またはそれらの合金層を形成する。このとき、それぞれの電極パターンのピッチは、第1の基板のけがき線(溝15)間に収まるように形成する。
Claims (13)
- 第1の基板の表面に、けがき線を入れることにより第1の溝を形成する工程と、前記第1の基板の前記第1の溝が形成された表面上に、前記第1の溝上に形成される第2の溝を有する窒化物半導体層を形成する工程と、前記窒化物半導体層と第2の基板とを結合する工程と、前記窒化物半導体層と前記第1の基板とを分離する工程と、前記第2の基板と前記窒化物半導体層とを含むウエハをチップに分割するチップ分割工程と、を含み、
前記チップ分割工程において、前記窒化物半導体層に形成された前記第2の溝と分割位置とが一致するように、前記ウエハを前記チップに分割することを特徴とする窒化物半導体素子の製造方法。 - 前記第1の溝を形成する工程において、前記第1の基板の表面に、鋭利なものを接触させることにより、前記けがき線を入れることを特徴とする請求項1に記載の窒化物半導体素子の製造方法。
- 前記第1の溝を形成する工程において、前記第1の基板の表面に、レーザ光を照射することにより、前記けがき線を入れることを特徴とする請求項1に記載の窒化物半導体素子の製造方法。
- 前記第1の溝を形成する工程において、前記第1の溝を窒化物半導体素子チップの1個の1辺の長さの1以上の整数倍のピッチで形成することを特徴とする請求項1から請求項3のいずれかに記載の窒化物半導体素子の製造方法。
- 前記第1の溝の幅が1μm以上350μm以下であることを特徴とする請求項1から請求項4のいずれかに記載の窒化物半導体素子の製造方法。
- 前記第1の基板として、サファイア基板、Si基板またはSiC基板を用いることを特徴とする請求項1から請求項5のいずれかに記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体層を形成する工程が、少なくとも、バッファ層と、n型窒化物半導体層と、発光層と、p型窒化物半導体層とをこの順に形成する工程を含むことを特徴とする請求項1から請求項6のいずれかに記載の窒化物半導体素子の製造方法。
- 前記発光層は、前記第1の基板の主面に平行な面内で繋がって形成されることを特徴とする請求項7に記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体層と前記第1の基板とを分離する工程において、レーザ光を用いることを特徴とする請求項1に記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体層と前記第2の基板とを結合する工程は、室温以上の加熱雰囲気下および大気圧以上の加圧雰囲気下のうち少なくともいずれかの雰囲気下で行なうことを特徴とする請求項1から請求項9のいずれかに記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体層と前記第2の基板とを結合する工程において、結合材料として共晶接合金属を用いることを特徴とする請求項1から請求項10のいずれかに記載の窒化物半導体素子の製造方法。
- 前記窒化物半導体層に形成された前記第2の溝とチップ分割の際の分割位置とが一致するように、前記窒化物半導体層上に電極を形成する工程をさらに含む請求項1から請求項11のいずれかに記載の窒化物半導体素子の製造方法。
- 前記第2の基板として、導電性基板を用いることを特徴とする請求項1から請求項12のいずれかに記載の窒化物半導体素子の製造方法。
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JP2006006437A JP4818732B2 (ja) | 2005-03-18 | 2006-01-13 | 窒化物半導体素子の製造方法 |
TW095107868A TWI304227B (en) | 2005-03-18 | 2006-03-09 | Nitride semiconductor device and manufacturing method thereof |
US11/378,767 US7858414B2 (en) | 2005-03-18 | 2006-03-17 | Nitride semiconductor device and manufacturing method thereof |
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US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
US7459025B2 (en) * | 2002-06-03 | 2008-12-02 | Tien-Hsi Lee | Methods for transferring a layer onto a substrate |
JP4325232B2 (ja) * | 2003-03-18 | 2009-09-02 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US7683386B2 (en) * | 2003-08-19 | 2010-03-23 | Nichia Corporation | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth |
KR20050019485A (ko) | 2003-08-19 | 2005-03-03 | 삼성전자주식회사 | 광검출소자가 일체적으로 형성되는 수직 면발광 레이저 |
EP1695378A4 (en) * | 2003-12-05 | 2010-08-25 | Showa Denko Kk | METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP |
US7332411B2 (en) * | 2004-08-12 | 2008-02-19 | Hewlett-Packard Development Company, Lp | Systems and methods for wafer bonding by localized induction heating |
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2006
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JP2006295124A (ja) | 2006-10-26 |
TWI304227B (en) | 2008-12-11 |
US7858414B2 (en) | 2010-12-28 |
TW200701335A (en) | 2007-01-01 |
US20060223330A1 (en) | 2006-10-05 |
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