AU2002237658A1 - Process for producing iii-v compound films by chemical deposition - Google Patents

Process for producing iii-v compound films by chemical deposition

Info

Publication number
AU2002237658A1
AU2002237658A1 AU2002237658A AU3765802A AU2002237658A1 AU 2002237658 A1 AU2002237658 A1 AU 2002237658A1 AU 2002237658 A AU2002237658 A AU 2002237658A AU 3765802 A AU3765802 A AU 3765802A AU 2002237658 A1 AU2002237658 A1 AU 2002237658A1
Authority
AU
Australia
Prior art keywords
chemical deposition
compound films
producing iii
iii
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002237658A
Inventor
David Kisailus
Frederick F. Lange
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of AU2002237658A1 publication Critical patent/AU2002237658A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W16/00—Network planning, e.g. coverage or traffic planning tools; Network deployment, e.g. resource partitioning or cells structures
    • H04W16/24—Cell structures
    • H04W16/28—Cell structures using beam steering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/06—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
    • H04B7/0613—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using simultaneous transmission
    • H04B7/0615—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using simultaneous transmission of weighted versions of same signal
    • H04B7/0617—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using simultaneous transmission of weighted versions of same signal for beam forming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
    • H04B7/0837—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station using pre-detection combining
    • H04B7/0842—Weighted combining
    • H04B7/086—Weighted combining using weights depending on external parameters, e.g. direction of arrival [DOA], predetermined weights or beamforming
AU2002237658A 2000-11-20 2001-11-20 Process for producing iii-v compound films by chemical deposition Abandoned AU2002237658A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25226000P 2000-11-20 2000-11-20
US60/252,260 2000-11-20
US30524901P 2001-07-12 2001-07-12
US60/305,249 2001-07-12
PCT/US2001/043452 WO2002040752A2 (en) 2000-11-20 2001-11-20 Process for producing iii-v compound films by chemical deposition

Publications (1)

Publication Number Publication Date
AU2002237658A1 true AU2002237658A1 (en) 2002-05-27

Family

ID=26942170

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002237658A Abandoned AU2002237658A1 (en) 2000-11-20 2001-11-20 Process for producing iii-v compound films by chemical deposition

Country Status (3)

Country Link
US (1) US6770131B2 (en)
AU (1) AU2002237658A1 (en)
WO (1) WO2002040752A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780239B2 (en) * 2000-10-19 2004-08-24 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US6911083B2 (en) * 2002-06-11 2005-06-28 Tokyo Institute Of Technology Method for producing powders made of gallium nitride and apparatus for producing the same
JP5015417B2 (en) * 2004-06-09 2012-08-29 住友電気工業株式会社 GaN crystal manufacturing method
KR100712753B1 (en) * 2005-03-09 2007-04-30 주식회사 실트론 Compound semiconductor device and method for manufacturing the same
JP4818732B2 (en) * 2005-03-18 2011-11-16 シャープ株式会社 Method of manufacturing nitride semiconductor device
US20070082505A1 (en) * 2005-10-11 2007-04-12 Freescale Semiconductor, Inc. Method of forming an electrically insulating layer on a compound semiconductor
US20170155016A9 (en) * 2013-03-07 2017-06-01 Meijo University Nitride semiconductor crystal and method of fabricating the same
JP6111818B2 (en) * 2013-04-24 2017-04-12 三菱電機株式会社 Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4833103A (en) 1987-06-16 1989-05-23 Eastman Kodak Company Process for depositing a III-V compound layer on a substrate
US4975299A (en) * 1989-11-02 1990-12-04 Eastman Kodak Company Vapor deposition process for depositing an organo-metallic compound layer on a substrate
JP2642876B2 (en) * 1994-08-11 1997-08-20 工業技術院長 Lead titanate-based dielectric thin film
US6001284A (en) * 1995-08-04 1999-12-14 Toyo Ink Manufacturing Co., Ltd. Organoelectroluminescence device material and organoelectroluminescence device for which the material is adapted
DE19929591A1 (en) * 1999-06-28 2001-01-04 Max Planck Gesellschaft Process for producing an epitaxial gallium nitride layer on a substrate comprises applying a precursor compound containing gallium carbodiimide on the substrate, and converting into crystalline gallium nitride by pyrolysis
US6294016B1 (en) * 1999-10-20 2001-09-25 Kwangju Institute Of Science And Technology Method for manufacturing p-type GaN based thin film using nitridation

Also Published As

Publication number Publication date
WO2002040752A3 (en) 2003-03-27
US6770131B2 (en) 2004-08-03
WO2002040752A2 (en) 2002-05-23
US20030012874A1 (en) 2003-01-16

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