WO2008153130A1 - 窒化物半導体発光素子及び窒化物半導体の製造方法 - Google Patents

窒化物半導体発光素子及び窒化物半導体の製造方法 Download PDF

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Publication number
WO2008153130A1
WO2008153130A1 PCT/JP2008/060855 JP2008060855W WO2008153130A1 WO 2008153130 A1 WO2008153130 A1 WO 2008153130A1 JP 2008060855 W JP2008060855 W JP 2008060855W WO 2008153130 A1 WO2008153130 A1 WO 2008153130A1
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WO
WIPO (PCT)
Prior art keywords
layer
nitride semiconductor
emitting element
light emitting
buffer layer
Prior art date
Application number
PCT/JP2008/060855
Other languages
English (en)
French (fr)
Inventor
Yasuo Nakanishi
Shunji Nakata
Tetsuya Fujiwara
Kazuhiko Senda
Masayuki Sonobe
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to EP08765565A priority Critical patent/EP2164115A4/en
Priority to US12/452,060 priority patent/US20100133506A1/en
Priority to CN200880020316XA priority patent/CN101689586B/zh
Priority to JP2009519318A priority patent/JPWO2008153130A1/ja
Publication of WO2008153130A1 publication Critical patent/WO2008153130A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials

Abstract

　ＡｌＮバッファ層上に積層される窒化物半導体の結晶品質等の品質を良くし、光出力を向上させることができる窒化物半導体発光素子及び窒化物半導体の製造方法を提供する。 　サファイア基板１上にＡｌＮバッファ層２が形成され、その上に、順に、ｎ型ＡｌＧａＮ層３、ＩｎＧａＮ／ＧａＮ活性層４、ｐ型ＧａＮ層５の窒化物半導体が積層されている。また、ｎ型ＡｌＧａＮ層３表面にｎ電極７が、ｐ型ＧａＮ層５の上にｐ電極６が形成されている。ｎ型ＡｌＧａＮ層３は、光やキャリアを閉じ込めるためのクラッド層としての役割を有する。また、ＡｌＮバッファ層２は、成長温度９００°C以上において、Ａｌ原料の供給とＮ原料の供給とを交互に行って作製される。 　
PCT/JP2008/060855 2007-06-15 2008-06-13 窒化物半導体発光素子及び窒化物半導体の製造方法 WO2008153130A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08765565A EP2164115A4 (en) 2007-06-15 2008-06-13 NITRIDE SEMICONDUCTOR LIGHT ELEMENT AND METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR
US12/452,060 US20100133506A1 (en) 2007-06-15 2008-06-13 Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
CN200880020316XA CN101689586B (zh) 2007-06-15 2008-06-13 氮化物半导体发光元件和氮化物半导体的制造方法
JP2009519318A JPWO2008153130A1 (ja) 2007-06-15 2008-06-13 窒化物半導体発光素子及び窒化物半導体の製造方法

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
JP2007158959 2007-06-15
JP2007-158974 2007-06-15
JP2007-158954 2007-06-15
JP2007-158513 2007-06-15
JP2007158513 2007-06-15
JP2007158973 2007-06-15
JP2007158954 2007-06-15
JP2007-158973 2007-06-15
JP2007158974 2007-06-15
JP2007-158959 2007-06-15
JP2007260926 2007-10-04
JP2007-260926 2007-10-04
JP2007-260933 2007-10-04
JP2007260933 2007-10-04
JP2007-262280 2007-10-05
JP2007262280 2007-10-05
JP2007289719 2007-11-07
JP2007-289719 2007-11-07

Publications (1)

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WO2008153130A1 true WO2008153130A1 (ja) 2008-12-18

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Country Status (7)

Country Link
US (1) US20100133506A1 (ja)
EP (1) EP2164115A4 (ja)
JP (1) JPWO2008153130A1 (ja)
KR (1) KR20100023960A (ja)
CN (1) CN101689586B (ja)
TW (1) TW200908393A (ja)
WO (1) WO2008153130A1 (ja)

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JP2012138638A (ja) * 2012-04-23 2012-07-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
US8344413B2 (en) 2009-05-29 2013-01-01 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip
JP2013254894A (ja) * 2012-06-08 2013-12-19 Toyoda Gosei Co Ltd 半導体発光素子、発光装置
JP2014011187A (ja) * 2012-06-27 2014-01-20 Nichia Chem Ind Ltd 窒化物半導体発光素子
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