CN112670378A - 一种发光二极管及其制造方法 - Google Patents
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- CN112670378A CN112670378A CN202011626521.XA CN202011626521A CN112670378A CN 112670378 A CN112670378 A CN 112670378A CN 202011626521 A CN202011626521 A CN 202011626521A CN 112670378 A CN112670378 A CN 112670378A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 44
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- 229910017083 AlN Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
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- 238000001451 molecular beam epitaxy Methods 0.000 description 2
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- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 238000012827 research and development Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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CN202011626521.XA CN112670378A (zh) | 2020-12-31 | 2020-12-31 | 一种发光二极管及其制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363360A (zh) * | 2021-05-21 | 2021-09-07 | 厦门士兰明镓化合物半导体有限公司 | 垂直结构led芯片及其制造方法 |
CN114038954A (zh) * | 2021-09-28 | 2022-02-11 | 厦门士兰明镓化合物半导体有限公司 | 发光二极管的外延结构及其制造方法 |
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CN108321280A (zh) * | 2018-03-21 | 2018-07-24 | 华南理工大学 | 一种非极性紫外led及其制备方法 |
CN110504340A (zh) * | 2019-09-18 | 2019-11-26 | 福建兆元光电有限公司 | 一种氮化镓发光二极管led外延片的生长方法 |
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2020
- 2020-12-31 CN CN202011626521.XA patent/CN112670378A/zh active Pending
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JP2000332293A (ja) * | 1999-05-21 | 2000-11-30 | Sharp Corp | Iii−v族窒化物半導体発光素子及びその製造方法 |
JP2002094112A (ja) * | 2001-08-10 | 2002-03-29 | Toyoda Gosei Co Ltd | 3族窒化物化合物半導体発光素子の製造方法 |
CN1758456A (zh) * | 2005-10-18 | 2006-04-12 | 南京大学 | 在β三氧化二镓衬底上生长InGaN/GaN量子阱L ED器件结构的方法 |
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CN101572288A (zh) * | 2009-05-27 | 2009-11-04 | 厦门大学 | 一种GaN基多量子阱超辐射发光二极管及其制备方法 |
CN101728472A (zh) * | 2009-12-02 | 2010-06-09 | 中国科学院半导体研究所 | 一种多层led芯片结构及其制备方法 |
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CN103579428A (zh) * | 2012-07-30 | 2014-02-12 | 比亚迪股份有限公司 | 一种led外延片及其制备方法 |
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CN203850331U (zh) * | 2014-04-30 | 2014-09-24 | 同辉电子科技股份有限公司 | 一种氮化镓基发光二极管外延片 |
CN105336821A (zh) * | 2015-10-08 | 2016-02-17 | 映瑞光电科技(上海)有限公司 | GaN基LED外延结构及其制备方法 |
CN106653970A (zh) * | 2016-11-18 | 2017-05-10 | 华灿光电(浙江)有限公司 | 一种发光二极管的外延片及其生长方法 |
CN108091740A (zh) * | 2017-11-08 | 2018-05-29 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制造方法 |
CN108321280A (zh) * | 2018-03-21 | 2018-07-24 | 华南理工大学 | 一种非极性紫外led及其制备方法 |
CN110504340A (zh) * | 2019-09-18 | 2019-11-26 | 福建兆元光电有限公司 | 一种氮化镓发光二极管led外延片的生长方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113363360A (zh) * | 2021-05-21 | 2021-09-07 | 厦门士兰明镓化合物半导体有限公司 | 垂直结构led芯片及其制造方法 |
CN113363360B (zh) * | 2021-05-21 | 2022-09-09 | 厦门士兰明镓化合物半导体有限公司 | 垂直结构led芯片及其制造方法 |
CN114038954A (zh) * | 2021-09-28 | 2022-02-11 | 厦门士兰明镓化合物半导体有限公司 | 发光二极管的外延结构及其制造方法 |
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