DE602005019569D1 - Lichtemittierende bauelemente mit stromblockierungsstrukturen und verfahren zur herstellung von lichtemittierenden bauelementen mit stromblockierungsstrukturen - Google Patents

Lichtemittierende bauelemente mit stromblockierungsstrukturen und verfahren zur herstellung von lichtemittierenden bauelementen mit stromblockierungsstrukturen

Info

Publication number
DE602005019569D1
DE602005019569D1 DE602005019569T DE602005019569T DE602005019569D1 DE 602005019569 D1 DE602005019569 D1 DE 602005019569D1 DE 602005019569 T DE602005019569 T DE 602005019569T DE 602005019569 T DE602005019569 T DE 602005019569T DE 602005019569 D1 DE602005019569 D1 DE 602005019569D1
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DE
Germany
Prior art keywords
current blocking
emitting components
blocking structures
light
blocking mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005019569T
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English (en)
Inventor
Kevin Haberern
Michael John Bergmann
Van Mieczkowski
David Todd Emerson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE602005019569D1 publication Critical patent/DE602005019569D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
DE602005019569T 2004-06-30 2005-03-30 Lichtemittierende bauelemente mit stromblockierungsstrukturen und verfahren zur herstellung von lichtemittierenden bauelementen mit stromblockierungsstrukturen Active DE602005019569D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/881,814 US20060002442A1 (en) 2004-06-30 2004-06-30 Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
PCT/US2005/010868 WO2006011936A2 (en) 2004-06-30 2005-03-30 Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures

Publications (1)

Publication Number Publication Date
DE602005019569D1 true DE602005019569D1 (de) 2010-04-08

Family

ID=35513875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005019569T Active DE602005019569D1 (de) 2004-06-30 2005-03-30 Lichtemittierende bauelemente mit stromblockierungsstrukturen und verfahren zur herstellung von lichtemittierenden bauelementen mit stromblockierungsstrukturen

Country Status (11)

Country Link
US (2) US20060002442A1 (de)
EP (1) EP1766697B1 (de)
JP (3) JP4904261B2 (de)
KR (2) KR101418224B1 (de)
CN (2) CN1977398A (de)
AT (1) ATE459106T1 (de)
CA (1) CA2567794A1 (de)
DE (1) DE602005019569D1 (de)
MY (1) MY143633A (de)
TW (2) TWI451589B (de)
WO (1) WO2006011936A2 (de)

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WO2006011936A3 (en) 2006-12-07
EP1766697B1 (de) 2010-02-24
CA2567794A1 (en) 2006-02-02
MY143633A (en) 2011-06-15
TWI451589B (zh) 2014-09-01
KR20130050372A (ko) 2013-05-15
JP2008505483A (ja) 2008-02-21
KR20120079172A (ko) 2012-07-11
US20070145392A1 (en) 2007-06-28
US20060002442A1 (en) 2006-01-05
TW201403856A (zh) 2014-01-16
JP2008153705A (ja) 2008-07-03
EP1766697A2 (de) 2007-03-28
ATE459106T1 (de) 2010-03-15
CN1977398A (zh) 2007-06-06
JP5009841B2 (ja) 2012-08-22
CN101714606A (zh) 2010-05-26
TWI506811B (zh) 2015-11-01
JP4904261B2 (ja) 2012-03-28
KR101418224B1 (ko) 2014-07-10
KR101418190B1 (ko) 2014-07-10
JP2012054570A (ja) 2012-03-15
TW200605402A (en) 2006-02-01

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