46 t1 24 五、發明說明（1) '—----- 一 士發明係有關於一種發光二極體元件，特別是有關於 一種高透光效率之發光二極體元件，藉由改變透明電極的 結構而增加光穿透率。 、 .使用化合物半導體來製作發光二極體（丨i ght emitting di〇de ; LED)元件時，為了使整個元件能夠均勻 的發光γ必須要使電流能夠均勻的由電極流入p型薄膜，一 口此故知1用透明電極（transparent contact)。此—^明 電極门時兼具有電流分散（current spreading)與透光的 功用。 、.的 、以往使用氮化物製作而得之發光二極體，所採用的方 式係利.用蒸鍍機在整個p型薄膜的表面鍍滿整面的薄金 、:鎳/金：一至數層）作為透明電極，然後在上面覆 ^ ° s ，但是由於薄金屬的存在使光的穿透率無法提 第1圖顯示傳統發光二極體元件之剖面結構示意圖； 二:（G if氧化^(δ8ΡΡΜΓ6)基板，12為經n型捧雜之氮 a ， 3為經P型摻雜之氮化鎵，14為N型接觸電極 A錄奸 15為P型接觸電極，16為絕緣物質，17a i活、性1声（j 2 ί金（Au)，19為二氧化石夕作為保護膜，20 ί/7二么t錐。需注意的是，在此透明電極17係由 鎳1 7a和金1 7b雙層結構所構成。 入，= f件動作時，電流由p型接觸電極15注 電極17 (鎳17a和金17b)而將電流分散，# 流㈣型氮化嫁13、活性層2。、則型氮：二；46 t1 24 V. Description of the invention (1) '------- One invention is about a light-emitting diode element, especially a light-emitting diode element with high light transmission efficiency, by changing the transparency The structure of the electrodes increases light transmission. When a compound semiconductor is used to make a light emitting diode (丨 iht emitting diode; LED) element, in order for the entire element to emit light uniformly, it is necessary to allow current to flow uniformly from the electrode into the p-type film. Therefore, a transparent electrode is used. This—the electrode gate has both current spreading and light transmission functions. The light-emitting diodes made from nitride in the past are used in a favorable manner. The entire surface of the p-type film is plated with thin gold using a vapor deposition machine: nickel / gold: one to several Layer) as a transparent electrode, and then covered with ^ ° s, but the transmittance of light cannot be improved due to the presence of a thin metal. Figure 1 shows a schematic cross-sectional structure diagram of a traditional light-emitting diode element; (δ8PPPMΓ6) substrate, 12 is n-type doped nitrogen a, 3 is P-type doped gallium nitride, 14 is N-type contact electrode A, 15 is P-type contact electrode, 16 is insulating material, 17a I live, sex 1 sound (j 2 ί gold (Au), 19 is the dioxide dioxide as a protective film, 20 ί / 7 two Mod t cone. It should be noted that the transparent electrode 17 is made of nickel 1 7a and Gold 1 7b double-layer structure. When f = action, the current is dispersed by the p-type contact electrode 15 and the electrode 17 (nickel 17a and gold 17b). 2. Type nitrogen: two;
461124 五、發明說明（2) 到達N型接觸電極1 4。而發光二極體元件所發出之光線則 穿透上述透明電極層1 7、及二氡化矽保護膜1 9而顯現出來 (如第1圖箭頭符號所示）。 第2圖顯示第1圖所示之發光二極體元件之俯視簡圖； 其中，第2圖沿A-A’方向之剖面圖即為第1圖。 參照第1、2圖，由於透明電極17除了在接觸電極15之 底部部份區域之外，係為全面覆蓋在p型氮化鎵1 3之上。 f明電極17主要係由鎳17a和金17b所構成，雖然為透明但 是對於光而言’並不具最佳之穿透效率（光線仍會在鎳l7a ，金17b中有損耗之情形），因此會減少發光二極體之發光 政率’而使其亮度降低。 朵一有鑑於此，本發明之目的為提出一種高透光效率之發 =一極體7L件’藉由在透明電極結構上設計複數個大小不 二的孔洞，藉以讓更多的光能從這些孔洞射出，以增加發 九一極體元件的亮度。 為了達成上述目的 +贫明提出之高 二極體元件，至少包括如下單元。 成.仓丨ΐ被覆層’由經第一型摻雜之化合物半導體所構 成，由Ν型摻雜之三族金屬氣化物所形成。 所構成型由換？二型摻雜之第^化合物半導體 -活性層，設置=雜:三一族金屬敗化物所形成。-第二型摻雜之第二化合物；導-、第二被覆層之間’由經 雜之三族金屬I化物所^導肢所構成；例如，由Ρ型推461124 V. Description of the invention (2) The N-type contact electrode 14 is reached. The light emitted by the light-emitting diode element penetrates the transparent electrode layer 17 and the silicon dioxide protective film 19 and appears (as shown by the arrow symbol in Fig. 1). Fig. 2 shows a schematic plan view of the light-emitting diode element shown in Fig. 1. Among them, the cross-sectional view taken along the direction A-A 'in Fig. 2 is the first figure. Referring to FIGS. 1 and 2, since the transparent electrode 17 is completely covered on the p-type gallium nitride 13 except for a part of the bottom portion of the contact electrode 15, it is shown in FIG. The bright electrode 17 is mainly composed of nickel 17a and gold 17b. Although it is transparent, it does not have the best penetration efficiency for light (the light will still be lost in nickel 17a and gold 17b), so It will reduce the luminous efficiency of the light-emitting diode and reduce its brightness. In view of this, the purpose of the present invention is to propose a high light transmission efficiency = a polar body 7L piece 'by designing a plurality of holes of the same size on the transparent electrode structure, so that more light energy from These holes are emitted to increase the brightness of the 911 polar element. In order to achieve the above purpose + the high diode element proposed by Ping Ming includes at least the following units. The coating layer is composed of a first-type doped compound semiconductor and an N-type doped group III metal vapor. What constitutes the replacement? Type II doped compound semiconductor-active layer, set = doped: formed by tri-metallic decay compounds. -The second type doped second compound; between the-and the second coating layer 'is composed of a doped leg of a doped III metal I compound; for example, a P-type pusher
461124 五、發明說明（3) 以及’ 一透明電極層，設置於上述第二被覆層之上； 其中’上述透明電極層中形成有複數個孔洞，^ 二 第二被覆層。 @露出上述 圖式之簡單說明： 第1圖顯示傳統發光二極體元件之剖面結構示立 第2圖顯示第1圖所示之發光二極體元 ;=沾 構）之俯視簡圖； 干（透明電極結 第3圖係顯示本發明發光二極體元件 剖面結構示意圖； 弟—貫靶例之 第4圖係顯示本發明發光二極體元件之每 剖面結構示意圖；以及 一只知例之 第5圖顯示上述第3、4圖中發光二極體 極結構之俯視簡圖。 干 及其電 符號說明： 11〜氧化铭基板；1 2 ~ N型摻雜之氮化镗.]Q 雜之氮化鎵；14〜N型接觸電極；15~p型 電.、，·里型摻 緣物質；Π〜透明電極；17a〜錄層；以巧， 石夕保護膜；20〜活性層；3卜氧化紹基板；32曰〜第=〜一氧化 層，33〜第二被覆層；34〜N型接觸電極；35〜ρ ^ :;3:'絕緣物質；37~透明電極層 1觸電 一層;5。〜透明物 件，光效率之發光二極體元461124 V. Description of the invention (3) and 'a transparent electrode layer is disposed on the second coating layer; wherein' the transparent electrode layer has a plurality of holes formed therein, and a second coating layer. @Exposing the simple description of the above diagrams: Figure 1 shows the cross-sectional structure of a conventional light-emitting diode element, and Figure 2 shows a schematic plan view of the light-emitting diode element shown in Figure 1; (Figure 3 of the transparent electrode junction is a schematic view showing the cross-sectional structure of a light-emitting diode element of the present invention; Figure 4 of a target-through example is a schematic view of the cross-sectional structure of a light-emitting diode element of the present invention; and a known example Figure 5 shows the schematic top view of the light-emitting diode structure in Figures 3 and 4. Dry and its electrical symbol description: 11 ~ oxide substrate; 12 ~ N-type doped nitride boring.] Q 杂Gallium nitride; 14 ~ N-type contact electrode; 15 ~ p-type electric, ..., · type doped edge material; Π ~ transparent electrode; 17a ~ recording layer; Qiao, Shi Xi protective film; 20 ~ active layer; 3 Dioxide substrate; 32 ~~ = oxide layer, 33 ~ second coating layer; 34 ~ N-type contact electrode; 35 ~ ρ ^ :; 3: insulating material; 37 ~ transparent electrode layer 1 electric shock layer 5. ~ Transparent object, light-emitting diode
〇626-5771TWF'ptd〇626-5771TWF'ptd
第6頁 461124 五、發明說明（4) 經 一第一被覆層32形成於一氧化鋁基板31 N型摻雜之三族氮化物所構成；在此實施例中，上’係由 被覆層3 2係為N型氮化鎵。 上述第一 一第二被覆層3 3，係由經p型摻雜之三族 成；在此實施例中，上述第二被覆層33係為匕物構 一活性層（或稱發光層）4〇，設置於上虱化鎵。 32和第二被覆層33之間’係由三族金屬氮-破覆層 此實施例中，上述活性層係為InGaN/GaN量子井構成，在 -透明電極層37 ’設置於上述第二被覆層32二 ，.+ 中，上述透明電極層中形成有複數個孔丄、 70)，而露出上述第二被覆層33。 第5圖所不之 極層=上：保護膜39，形成於部分或全部之上述透明電 需注意的是，上述透明電極層37，係由鎳（Ni)、鉻 (=、金㈤、鈦（Ti)、#(Pt)、銘（c〇)、把⑻）、銀 (Ag)、銅（Cu)之金屬中，至少選擇其一所形成。此外，上 述透明電極層37，亦可以由鎳（Ni)、鉻（Cr)、金（Au)、鈦 αυ、鉑（Ρΐ)、鈷（co)、鈀（Pd)、銀（Ag)、銅（cu)、鎢 (W)、翻（Mo)、銦（In)、鎂（Mg)、鋁（A1)…等之氧化物 中，至少選擇其一所形成。在此實施例中，係先分別鍍上 鎳37a和金37b，以形成具有雙層薄金屬電極結構後，再形 成所需之孔洞’而得到上述透明電極層3 7。 此外， 料係可選擇 上述保護膜3 9 ’係由絕緣介電質所形成；其材 自：SiOx、Ti02、SiNx、A 12 03、zr〇2、Ta2 05、Page 6 461124 V. Description of the invention (4) A first coating layer 32 is formed on an alumina substrate 31 and is an N-type doped group III nitride; in this embodiment, the upper part is composed of the coating layer 3 Series 2 is N-type gallium nitride. The above-mentioned first to second coating layer 3 3 is composed of three groups doped with p-type doping; in this embodiment, the above-mentioned second coating layer 33 is an active layer (or light emitting layer) 4 〇, set on the upper gallium carbide. Between the 32 and the second coating layer 33 is a group III metal nitrogen-breaking layer. In this embodiment, the above active layer is composed of an InGaN / GaN quantum well, and the transparent electrode layer 37 is provided on the second coating. In layer 32,. +, A plurality of holes (70, 70) are formed in the transparent electrode layer, and the second covering layer 33 is exposed. The electrode layer not shown in FIG. 5 = upper: The protective film 39 is formed on part or all of the above-mentioned transparent electricity. Note that the above-mentioned transparent electrode layer 37 is made of nickel (Ni), chromium (=, gold tin, titanium (Ti), # (Pt), inscription (c0), barium), silver (Ag), copper (Cu), at least one of them is selected and formed. In addition, the transparent electrode layer 37 may be made of nickel (Ni), chromium (Cr), gold (Au), titanium αυ, platinum (PZ), cobalt (co), palladium (Pd), silver (Ag), or copper. (Cu), tungsten (W), tungsten (Mo), indium (In), magnesium (Mg), aluminum (A1), etc., at least one of them is selected and formed. In this embodiment, nickel 37a and gold 37b are plated separately to form a double-layer thin metal electrode structure, and then a desired hole is formed to obtain the transparent electrode layer 37 described above. In addition, the material can be selected. The above-mentioned protective film 3 9 ′ is formed of an insulating dielectric; its material is: SiOx, Ti02, SiNx, A 12 03, zr〇2, Ta2 05,
461124 五、發明說明（5) HF〇2、polyimide (聚醯亞胺）等透明材料。在此實施例 中，上述保護膜3 9，係以電漿促進化學氣相沈積法 (plasma enhancement chemical deposition ; PECVD) 長Si02《Si3N4而得。 第5圖顯示上述第3圖中發光二極體元件、及其電極結 構之俯視簡圖；亦即第3圖係第5圖沿b-B，切線之剖面結構 圖。由第5圖相較於第2圖清楚可知，本發明主要係藉由在 透明電極層37上形成複數個孔洞7〇，以增加發光二極體元 =亮度。在此實施例中，上述孔洞7〇為圓形，其直徑大 小為〇] 1 ' 50 /zm。（上述孔洞亦可為不規則形。） 入(豆田中毛t (Γ矣極-體凡件動作時’電流由p型接觸電極3 5注 辟：“表示絕緣體），藉由透明電極37而將電流分 散，電流流過第二祜涛麻,电抓刀 (InGaN/GaN量子井）、/笛一1'、虱化鎵）33、活性層40 到達N型接觸電極34骖：被f層(N型氮化鎵)32，最後 穿透上述透明電極声%先一極體元件所發出之光線則 述透明電極層及保護膜39而顯現出來。由於上 率，進而提i發光U孔洞70 ’故可提高光線之穿透 實施例二：先-極體元件之亮度。 第4圖係顯干士益^ 剖面結構示意圖.x明發光二極體元件之第二實施例之 號代表。圖’其與第3圖中相同之單元，均以相同符 第4圖和第3圖 461124 五、發明說明（6) 於部分或全部之透明電極層37之上。 上述透明物層5 0係選擇自：具導電性之氧化物、蕭特 基金屬、及絕緣介電質其中之一而形成。而上述具導電性 之氧化物係可選擇自·· ITO、IZO、ΑΤΟ、AZO ' Sn02其中之 一。在此實施例中，上述透明物層5 0係為I TO層。 最後’保蔓膜3 9 ’再形成於部分或全部之上述透明物 層3 7上，結果如第4圖所示之結構。 第4圖亦係表示第5圖沿B-B，切線之剖面結構圖。同 理，由第4圖相較於第2圖清楚可知，本發明主要传葬由在 透明電娜上形成複數個孔洞7。，以增力:發== ::二度。而在此實施例中’上述孔洞7〇為圓形（亦可為 不規則形），其直徑大小為〇.卜5〇 。 由於上述透明電極層上形 峻之穿、希鱼，、隹；坦a二 成有孔洞70 ’故可提高光 線之穿透率’進而提兩發光二極 於孔洞及透明物層50的存在 冗度。另外，由 增加更多的光由元件之透明=電流分散更均勾，並 雖然本發明已以兩個較：層37之表面射出。 用以限定本發明，任何孰朵霄靶例揭露如上，然其並非 之精神和範圍内，當可做些 α孜勢者，在不脫離本發明 之保護範圍當視後附之争& °之更動和潤飾’因此本發明 甲5月專利範圍所界定者為準。461124 V. Description of the invention (5) HF〇2, polyimide (polyimide) and other transparent materials. In this embodiment, the protective film 39 is obtained by plasma enhancement chemical deposition (PECVD) with a length of Si02 <Si3N4. Fig. 5 shows a schematic plan view of the light-emitting diode element and its electrode structure in Fig. 3 above; that is, Fig. 3 is a cross-sectional structure view along line b-B in Fig. 5 in Fig. 5. As is clear from FIG. 5 compared with FIG. 2, the present invention mainly forms a plurality of holes 70 in the transparent electrode layer 37 to increase the light emitting diode element = brightness. In this embodiment, the hole 70 is circular, and its diameter is 0] 1 '50 / zm. (The holes mentioned above can also be irregular.) Into the bean field, t (Γ 矣 pole-when the body is in motion, the current is noted by the p-type contact electrode 35: "indicates an insulator), and the transparent electrode 37 Disperse the current, and the current flows through the second osmium, the electric grasping knife (InGaN / GaN quantum well), / di-1 ', gallium lice 33, the active layer 40 reaches the N-type contact electrode 34 骖: the f layer (N-type gallium nitride) 32, and finally transmitted through the transparent electrode above. The light emitted by the first polar element is revealed by the transparent electrode layer and the protective film 39. Due to the upper rate, the i-emitting U hole 70 is also raised. 'Therefore, the penetration of light can be improved. The second embodiment: the brightness of the first-polarity element. The fourth figure is a schematic diagram of the cross-section structure. The figure of the second embodiment of the light-emitting diode element is shown. 'It is the same as the unit in Figure 3 with the same symbols. Figure 4 and Figure 461124. V. Description of the invention (6) On part or all of the transparent electrode layer 37. The above-mentioned transparent layer 50 is selected From: one of conductive oxide, Schottky metal, and insulating dielectric. The oxide system can be selected from one of ITO, IZO, ATO, and AZO 'Sn02. In this embodiment, the above-mentioned transparent material layer 50 is an I TO layer. Finally, the' protective film 3 9 'is reformed On part or all of the above-mentioned transparent object layer 37, the result is the structure shown in Fig. 4. Fig. 4 is also a cross-sectional structure diagram along BB and tangent line in Fig. 5. Similarly, compared with Fig. 4 It is clear from FIG. 2 that the present invention mainly buryes a plurality of holes 7 formed on a transparent antenna, with a force increase: hair == :: :: two degrees. In this embodiment, the above-mentioned hole 70 is a circle. Shape (also can be irregular shape), its diameter is 0. 50. Because of the shape of the transparent electrode layer on the transparent through, Greek fish, 隹; Tan a into a hole 70 ', so it can improve the light 'Transmittance' further increases the redundancy of the two light emitting diodes in the hole and the transparent object layer 50. In addition, by adding more light, the transparency of the element = current dispersion is more uniform, and although the present invention has : The surface of layer 37 is emitted. To define the present invention, any example of the Duo Xiaoxiao target is disclosed as above, but its spirit and Inner circle, as may be done α Zi and powerful, without departing from the scope of the present invention when the view is attached dispute & subject modifier ° and modifications of 'the present invention thus methanesulfonic May be defined by the scope of the patent.