200828623 九、發明說明 【發明所屬之技術領域】 本發明是有關於一種發光二極體及其製造方法，且特別 是有關於一種具有導電基板之發光二極體及其製造方法。 ^ 【先前技術】 請參照第1A圖至第1D圖，其係繪示傳統發光二極體之 製程剖面圖。在一般發光二極體之製作中，先於成長基板106 ( 上磊晶成長發光磊晶結構104。接下來，提供永久基板100， 並於永久基板100之欲進行接合表面上形成接合金屬層102。 接著，使發光磊晶結構104與接合金屬層102相對，並對成 長基板1 0 6與永久基板10 0施加壓力116 ’以使發光蠢晶結構 104與接合金屬層102結合，如第1A圖所示。此時，發光磊 晶結構104透過接合金屬層102而與永久基板100接合。 接著，利用雷射剝除方式，以雷射114來移除成長基板 106，並暴露出發光磊晶結構104之表面，如第1B圖所示。 I 隨後，可先利用微影與蝕刻技術進行發光二極體元件之定 義，以在發光磊晶結構104中形成數個溝槽112，其中這些溝 槽112貫穿發光磊晶結構104，而暴露出部分之接合金屬層 . 1 02，如第1 C圖所示。藉由這些溝槽11 2，而將發光磊晶結構 1 04分隔成數個發光磊晶單元1 08。再製作數個電極110與電 極120分別位於發光磊晶單元108與永久基板100上，而形 成如第1 C圖所示之結構。 接下來，即可利用切割技術，並沿著溝槽112切開接合 5 200828623 金屬層102與水久基板100,而將所有之發光磊晶單元⑽予 以分離，而完成發光二極體118之製作。 然而，利用雷射114從發光磊晶結構1〇4之表面上剝除 成長基板1〇6時’由於接合金屬| 1〇2與發光蟲晶結構⑽ 之熱膨脹係數具有非常大之差異，因此在雷射剝除過程中合 產生巨大之熱應力與壓應力，進而對接合_ ι〇2與發： 蟲晶結構104之接合介面造成相當大之衝擊。如此一來 僅會降低發光^結構1G4轉移至永久基板⑽的均勻性血 a曰 完整性，而導致轉移製程可靠度下降，更可能會對發光蟲1、 結構104造成損害。 x 【發明内容】 口此纟發明之目的就是在提供一種發光二極體， ::==1率好之導電基板，藉以提高發光二極體：件 之政熱效㈣光取出率，進—步提升發光二 效能與亮度。 几1干之釭作 c I發明之另一目的是在提供-種發光二極體之梦迕方 法，其係在製作導電美 [您衣k方 個溝槽，再於溝槽中：入先在發光轰晶結構中形成數 發光蟲晶結構上。如此:緣緩衝層，接著設置導電基板於 導電之成長基板時，可：^後續利用雷射剝離製程移除不 蟲晶結構所造成之衝擊H低製程熱應力與壓應力對發光 良率。 擎目此’可大幅提升雷射剝離製程的 本發明之又一目沾Η 士 、疋在提供一種發光二極體之製造方 6BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a light-emitting diode and a method of fabricating the same, and more particularly to a light-emitting diode having a conductive substrate and a method of fabricating the same. ^ [Prior Art] Please refer to Figs. 1A to 1D, which are cross-sectional views showing a process of a conventional light-emitting diode. In the fabrication of a general light-emitting diode, the light-emitting epitaxial structure 104 is grown prior to the epitaxial growth of the substrate 106. Next, the permanent substrate 100 is provided, and the bonding metal layer 102 is formed on the bonding surface of the permanent substrate 100. Next, the luminescent epitaxial structure 104 is opposed to the bonding metal layer 102, and a pressure 116' is applied to the growth substrate 106 and the permanent substrate 010 to bond the luminescent silica structure 104 to the bonding metal layer 102, as shown in FIG. At this time, the luminescent epitaxial structure 104 is bonded to the permanent substrate 100 through the bonding metal layer 102. Next, the laser substrate 114 is used to remove the growth substrate 106 by laser stripping, and the luminescent epitaxial structure is exposed. The surface of 104 is as shown in Fig. 1B. I Subsequently, the definition of the light emitting diode element can be first performed by lithography and etching techniques to form a plurality of trenches 112 in the light emitting epitaxial structure 104, wherein the trenches 112 penetrates the luminescent epitaxial structure 104 and exposes a portion of the bonding metal layer. 102, as shown in FIG. 1C. By the trenches 112, the luminescent epitaxial structure 104 is separated into a plurality of luminescent epitaxial layers. Unit 1 08. Again A plurality of electrodes 110 and electrodes 120 are formed on the luminescent epitaxial unit 108 and the permanent substrate 100, respectively, to form a structure as shown in Fig. 1. Next, the dicing technique can be utilized and the dicing is performed along the trench 112. 5 200828623 The metal layer 102 and the water-long substrate 100 are separated from all the light-emitting epitaxial units (10) to complete the fabrication of the light-emitting diode 118. However, the laser 114 is used from the surface of the light-emitting epitaxial structure 1〇4. When the growth substrate 1 is removed, the thermal expansion coefficient of the bonding metal | 1〇2 and the luminescent crystal structure (10) is very different, so that a large thermal stress and compressive stress are generated during the laser stripping process. A considerable impact is exerted on the bonding interface of the bonding _ ι〇2 and the hair morphological structure 104. This only reduces the uniformity of the luminescent structure 1G4 transferred to the permanent substrate (10), resulting in a transfer process. The reliability is degraded, and it is more likely to cause damage to the illuminating insect 1, structure 104. x [Summary of the Invention] The purpose of the invention is to provide a light-emitting diode, a conductive substrate with a good ratio of ::==1. High-emitting diodes: the thermal efficiency of the pieces (4) the light extraction rate, the step-by-step improvement of the efficacy and brightness of the light. The other purpose of the invention is to provide the dream of a kind of light-emitting diode. The 迕 method, which is made in the conductive beauty [you have a groove in the k-throw, and then in the groove: first form a number of illuminating crystal structures in the luminescent crystal structure. Thus: edge buffer layer, then set the conductive substrate When the conductive substrate is grown, it can be: subsequently used to remove the non-worm crystal structure by the laser stripping process, and the impact of the low-temperature thermal stress and the compressive stress on the light-emitting yield. The engine can greatly improve the laser stripping process. Another object of the present invention is to provide a manufacturer of a light-emitting diode 6
C C- 200828623 Γ婆播係在衣作導電基板之前，先在發光蠢晶結構中形成數 個f槽，再於溝槽中填人絕緣勝，之後再設置導電基板於發 :“、‘構上。因此，可有效降低後續成長基板之i射剝離 熱應力與壓應力衝擊，而可提高發光二=: 1千麻日日口口貝 ，i隹以, -，， 貝進而可增加7G件之使用壽命。 根據本發明；七g ± 这目的，獒出一種發光二極體，至少包 括：一導電基板；一第二雷拇 匕 單元設於第二電性電極於基板上；-發光蟲晶 .'? 才之弟一邛/刀上，其中發光磊晶單元具 一 對之弟一表面與弟二表面，且發光磊晶單 :弟 '"面與第二電性電極直接接合，發光磊晶單元之第 一表面暴路出，一絕緣緩衝層設於第二電性電極之第二部分 上並圍繞在發光蟲晶單元之侧面外；以及一第一電性電極設 ::光蟲晶單元之第二表面的一部分上，其中第一電性電極 /、弟一電性電極具有相反之電性。 依照本I明一較佳實施丫列，上述導電基板之材料為具導 電性佳且反射率好之金屬，例如銅、鎳、鉬或鋁。 、依妝本發明另一較佳實施例，上述絕緣緩衝層之材料可 =氧切（SiQx)、氮化邦iNx)、氧化鈦（抓）或氧化峰叫 等氧化物所組成之一族群。 一、曾根據本發明之目的，提出一種發光二極體，至少包括： 一導電基板；一第二電性電極設於導電基板上；一發光磊晶 單元設於第二電性電極之第一部分上，其中發光蠢晶單元具 有-，面、以及相對之[表面與第二表面，且發光蟲晶單 兀之第-表面與第二電性電極直接接合，發光磊晶單元之第 7 200828623 二表面暴露出；一絕緣膠設於第二電性電極之第二部分上並 圍繞在發光磊晶單元之側面外；以及一第一電性電極設於發 光遙晶單元之第二表面的一部分上，其中第—電性電極與第 二電性電極具有相反之電性。 依照本發明—較佳實施例，上述絕緣膠之材料可為聚亞 醯胺（pi)、笨并環丁院（BCB)、過氟環丁烧（pfcb)或環氧樹脂 (Epoxy)所構成材料族群中至少一種材料或其他可代替之材 料0 。、減本發明另一之.㈣’提出一種發光二極體之製造方 法·’至少！1括：形成―發光蟲晶結構於—成長基板之一表面 上’开/成複數個/冓槽貫穿發光n结構，以形成複數個發光 磊晶單元，並暴露出成長基板之表面的一部分，其中每一發 光磊晶單元具有一側面、以及相對之第一表面與， 且每-發光磊晶單元之第二表面與成長基板接合；形成一絕 緣緩=層填滿每一溝槽並圍繞在發光磊晶單元之側面外；形 成^一第二電性電極位於這些發光遙晶單元之第—I面與絕緣 缓衝層上；形成一導電基板覆蓋在第二電性電極上；移除成 長基板，以暴露出每一發光磊晶單元之第二表面；形成複數 個，-電性電極’其中這些第―電性電極分別對應於這些發 光磊晶2元，且位於對應之發光磊晶單元之第二表面上，其 中适些第-電性電極與第：電性電極具有相反之電性；以及 進行-分割步驟，m發光蠢晶結構之溝槽而分離發光蟲 晶單元。 依妝本發明一較佳實施例，上述移除成長基板之步驟可 8 200828623 利用雷射剝離法。 根據本發明之又一目的，提出一種發光二極體之製造方 法，至少包括：形成一發光磊晶結構於一成長基板之一表面 •上，形成複數個溝槽貫牙發光磊晶結構，以形成複數個發光 蠢晶單兀’並暴露出成長基板之表面的一部分，其中每一發 光磊晶單元具有一側面、以及相對之第一表面與第二表面， 且每一發光蠢晶單元之第二表面與成長基板接合；形成一絕 緣膠填滿每一溝槽並圍繞在發光磊晶單元之側面外；形成一 Γ第二電性電極位於發光磊晶單元之第一表面與絕緣膠上；形 成導电基板覆蓋在第二電性電極上；移除成長基板，以暴 露出每一發光磊晶單元之第二表面；形成複數個第一電性電 極，其中這些第一電性電極分別對應於發光磊晶單元，且位 於對應之發光蠢晶單兀之第二表面上，纟中這些第一電性電 極與第一電性電極具有相反之電性；以及進行一分割步驟， 以/〇著發光磊晶結構之溝槽而分離發光磊晶單元。 ^ =妝本發明一較佳實施例，上述形成導電基板之步驟與 I，幵（成第—電性電極之步驟之間，$至少包括形成一反射層直 接覆蓋在第二電性電極上。 【實施方式】 石曰么月揭疼種發光二極體及其製造方法，係先於發光 從日日^構中δ又置數個溝槽，再利用絕緣缓衝結構填入溝槽 中：？離^光磊晶結構與後續形成之導電基板。因此，可 Ρ争低後、貝之雷射剝離製程所產生之熱應力與壓應力對發光磊 9 200828623 f 晶結構的衝擊，而可提高雷射剝離製程之良率，順 具有南導電性且南反射率之導電基板的發光二極 -步提升發光元件之操作性能，延長發光元件之使用‘入進 並增強發光元件之亮度。為了使本發明之敘述更 備，可參照下列描述並配合第2A圖至第7圖之圖式。揽μ 請參照第2Α圖至第2£圖，其緣示依照本發明_奸杏 :例的-種發光二極體之製程剖面圖。在本示範實施例中貝 先七供成長基板200,以供後續蟲晶材料層成長於其上 =基板2⑽之材料可例如為藍寶石.。再利用例如蟲晶成長方 絲成發光蟲晶結構202於成長基板細之表面上。在^者 ^例中’發光蟲晶結才冓202可由瓜族氮化物化合物半導體只 例^氮化嫁（GaN)，因此所製成之發光二極體元件亦可稱為m 族氮化物化合物半導體發弁—搞# ^ t先一極體，例如氮化鎵發光二極 -。—般而言，發光蟲晶結構202主要包括依序堆疊在成長 =200之表面的第—電性半導體層、主動層以及第二電性 :體層’其中第一電性與第二電性具有相反之電性。舉例 C "，當第-電性為N型時，第二電性為P型；而當第一電 =，p型時，第二電性為N型。接下來，利用钮刻方式，> :可利用乾式姓刻法，移除發光蟲晶結冑搬的特定區域广 歹’如對應於預定切割線的區域，以在發光磊晶結構202中形 j數個溝槽206貫穿發光磊晶結構202，其中這些溝槽2〇6暴 成長基板200之部分表面’而將發光磊晶結構2〇2分隔 -夕個發光磊晶單元2〇4，如第2A圖所示。這些發光磊晶= 之表面與成長基板200之表面接合。在本發明中， 200828623 這些溝槽206之側面可為平 石曰為千面、拋物面、或曲面，因此發光 麻日日早兀204之側面可為单 ”、、平面、抛物面、或曲面。接著，形 成絕緣緩衝層208埴湓、、兽μ ，、溝槽206而覆蓋住每一個發光磊晶單 兀204之側面，以隔離私.石曰抑一 一 ^ # &光猫日日早兀2〇4與後續形成之導電 -二氧化砂:妝第2B圖)。絕緣緩衝層208之材料可例如 :ΐ ΓΓ1、氮切（SiNx)、氧化鈦（Ti〇x)以及氧化紹（a队） =、= 族群。隨後，利用例如熱蒸鏟法、電子 广曰麗.- on/l 心成弟一電性電極210位於發光磊 f 日日早7G 204與絕緣緩衝層2〇s 二f丄 槿/ 士心士而形成如第2A圖所示之結 構。在本發明中，第二雷#雷 is。甘士 # 電極210可為不透明歐姆反射電 極。其中，弟二電性電極2 1 〇之好把 人》/ " 2i〇之材枓可為選自於由鎳/金、氧 化鎳/金、鈀/銀/金/鈦/金、鉑/ “自/人… 拍/釕鈦/麵/金、纪/鎳、鎳/把/金、 鉑/鎳/金、釕/金、銳/金、録/金、 鉑# 、’ 、，/鎳/盃、鎳/鉑、鎳銦以及 麵銦（Ptjn7)所組成之一族群。 接著’利用電錢法或沉積法 锋兩 X儿積法形成導電基板212覆蓋在 弟二電性電極210上，如第2B „张—^ / 弟2B圖所不。導電基板212之材料 〇較佳係採用具導電性佳且反射率 ^ ^ 之金屬。在本發明中，導 電基板212之材料可例如為銅、 群。 鉬鎳以及鋁所組成之一族 待導電基板2 12完成德，剎田点r丄& Μ川十立，入 成冑利用例如雷射剝離方式，以雷 射214來剝除成長基板2〇〇，而暴露出發光 緣緩衝層208，如第2C圖所示。 曰凡 ”、’、 由於，發光磊晶單元204之外伽；l 士 .^ , L 您外側面上有絕緣緩衝層208 包覆，如此可使發光磊晶單元2〇4 興弟一電性電極210及導 11 200828623 電基板212之間不直接接合而為絕緣缓衝層2〇8所阻隔。因 此，利用雷射214剝除成長基板200時，藉由絕緣緩衝層2〇8 之緩衝，可有效減低雷射剝離過程中在發光磊晶單元2〇4與 _導電基板212之間所引發之熱應力與壓應力，而可降低對發 光蠢晶單元204與導電基板212之接合介面的衝擊，進一步 可提升發光磊晶單元204轉移至導電基板21 2的均勻性與完 整性’達到提咼轉移可靠度與發光磊晶單元204之品質的目 的。 (, 剝除成長基板200後，利用例如熱蒸鐘法、電子束蒸錢 法或離子濺鍍法，形成數個第一電性電極216分別對應於發 光磊晶單元204且位於對應之發光磊晶單元2〇4的暴露表面 的一部分上，如第2D圖所示。其中，這些第一電性電極2 i 6 之材料可例如選自於由銦、鋁、鈦、金、鎢、銦錫、氮化鈦、 石夕化鎢、鈾銦（Ptin2)、鈀/紹、鎳/石夕、鈕/紹、鈦/銀、钽/銀、 鈦/無、鈦/金、鈦/氮化鈦、錯/氮化結、金/鍺/鑲、鉻/鎳/金、 鎳/鉻/金、鈦/!巴/金、鈦/麵/金、鈦/紹/鎳/金、金/石夕/鈦/金/石夕 以及金/鎳/鈦/矽/鈦所組成之一族群。如此，第一電性電極216 與發光磊晶單元204中之第一電性半導體層電性接合，而第 笔丨生電極210與發光蠢晶單元204中之第二電性半導體層 ♦ 電性接合。 •、接著，可進行分割步驟，以分離這些發光磊晶單元204。 進仃分割步驟時，可沿著相鄰之二發光磊晶單元2〇4之間的 溝槽206進行切割，而將所有之發光磊晶單元2〇4連同對應 之第一電性電極216與第二電性電極21〇、以及下方之導電基 12 200828623 板212予以分離，而完成發光二極體218的製作，如 e 與第2F圖所示。 " 從第2E圖與第2F圖之發光二極體218纟 、、°攝中可清楚看 出，發光二極體218之第二電性電極21〇 私炫ζιυ位於導電基板212 上’發光遙晶單元204設於第二電性電極2Λ 包往21 〇上，而絕緣缓 .衝層則介於第二電性電極210與發光蟲晶單元綱之間 並同時包覆在發光遙晶單元204之側面上，第—電性電極216 則位在發光蠢晶單元204的表面上且相對於第二電性電極 (210 ° 請參照第4圖，在本發明之另一實施例中，可在上述實 施例尚未形成導電基板212之前（如第2人圖之結構），先形成 反射層222覆蓋在第二電性電極21〇上，以將發光蟲晶單元 204朝導電基板212所發出之光予以反射，而達到增進元件之 光取出率的效果。在此實施例中中，第二電性電極2ι〇可為 透明歐姆電極，且第二電性電極21〇之材料可為氧化銦錫C C- 200828623 Before the clothing is made into a conductive substrate, a number of f-grooves are formed in the light-emitting structure, and then the insulation is filled in the trenches, and then the conductive substrate is placed on the hair: ", ' Therefore, it can effectively reduce the thermal stress and compressive stress impact of the subsequent growth of the substrate, and can improve the illuminating two =: 1 千日日日口口, i隹以, -,, 贝, and then can increase 7G pieces According to the present invention; seven g ± for the purpose of extracting a light-emitting diode, comprising at least: a conductive substrate; a second yoke unit disposed on the second electrical electrode on the substrate;晶.'? The younger brother of a 邛 / knife, in which the luminescent epitaxial unit has a pair of brothers on the surface and the second face, and the luminescent epitaxial single: the brother '" face directly with the second electrical electrode, a first surface of the luminescent epitaxial unit is violently exited, an insulating buffer layer is disposed on the second portion of the second electrical electrode and surrounds the side of the luminescent crystal unit; and a first electrical electrode is disposed: a portion of the second surface of the insect crystal unit, wherein the first electrical electrode / The electrical electrode has the opposite electrical properties. According to the preferred embodiment of the present invention, the conductive substrate is made of a metal having good conductivity and good reflectivity, such as copper, nickel, molybdenum or aluminum. In another preferred embodiment of the invention, the material of the insulating buffer layer may be a group of oxides such as oxygen cut (SiQx), nitride (iNx), titanium oxide (grab) or oxide peak. An object of the present invention is to provide a light emitting diode comprising at least: a conductive substrate; a second electrical electrode disposed on the conductive substrate; a light emitting epitaxial unit disposed on the first portion of the second electrical electrode, wherein the light emitting The stupid crystal unit has a - surface, and a relative surface [the surface and the second surface, and the first surface of the luminescent crystal unit is directly bonded to the second electric electrode, and the second surface of the luminescent epitaxial unit is exposed; An insulating paste is disposed on the second portion of the second electrical electrode and surrounding the side of the luminescent epitaxial unit; and a first electrical electrode is disposed on a portion of the second surface of the illuminating crystal unit, wherein the first Electrical electrode and second The electrical electrode has the opposite electrical properties. According to the preferred embodiment of the present invention, the material of the above insulating rubber may be polyiminamide (pi), stupid ring condensate (BCB), perfluorocyclobutane (pfcb). Or at least one material or other replaceable material of the material group composed of epoxy resin (Epoxy). The invention is further reduced. (4) 'Proposed a method for manufacturing a light-emitting diode · 'At least! The illuminating crystal structure is formed on the surface of one of the growth substrates by a plurality of openings/grooves through the light-emitting n structure to form a plurality of luminescent epitaxial units and exposing a portion of the surface of the growth substrate, wherein each luminescence The epitaxial unit has a side surface and a first surface opposite to each other, and the second surface of each of the light emitting epitaxial units is bonded to the growth substrate; forming an insulating retard layer filling each trench and surrounding the light emitting epitaxial unit Forming a second electrical electrode on the first surface of the light-emitting crystal unit and the insulating buffer layer; forming a conductive substrate covering the second electrical electrode; removing the growth substrate to expose Every luminescent epitaxial a second surface of the element; forming a plurality of electric electrodes, wherein the first electric electrodes respectively correspond to the luminescent epitaxial elements and are located on the second surface of the corresponding luminescent epitaxial unit, wherein - the electrical electrode and the first: the electrical electrode have opposite electrical properties; and the performing-dividing step, the m-light emitting structure of the groove to separate the luminescent insect crystal unit. According to a preferred embodiment of the present invention, the step of removing the growth substrate can be performed by using the laser lift-off method. According to still another object of the present invention, a method for fabricating a light-emitting diode includes at least forming a light-emitting epitaxial structure on a surface of a growth substrate to form a plurality of trench-transfer epitaxial structures. Forming a plurality of light-emitting cells and exposing a portion of a surface of the growth substrate, wherein each of the light-emitting epitaxial cells has a side surface, and a first surface and a second surface opposite to each other, and each of the light-emitting cells The two surfaces are bonded to the growth substrate; an insulating glue is formed to fill each of the trenches and surrounds the side of the luminescent epitaxial unit; and a second electrical electrode is formed on the first surface of the luminescent epitaxial unit and the insulating paste; Forming a conductive substrate covering the second electrical electrode; removing the growth substrate to expose a second surface of each of the luminescent epitaxial cells; forming a plurality of first electrical electrodes, wherein the first electrical electrodes respectively correspond to In the illuminating epitaxial unit, and on the second surface of the corresponding illuminating crystal unit, the first electrical electrodes of the crucible and the first electric electrode have opposite electrical properties; A step of dividing lines to / square epitaxial light emission structure of the trench isolated epitaxial light emitting unit. ^ = Make-up of a preferred embodiment of the invention, the step of forming a conductive substrate and I, 步骤 (between the steps of forming the first electrical electrode, $ at least comprises forming a reflective layer directly overlying the second electrical electrode. [Embodiment] The 曰 曰 曰 揭 揭 揭 疼 疼 及其 及其 及其 及其 及其 及其 及其 及其 及其 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭 揭The optical epitaxial structure and the subsequently formed conductive substrate. Therefore, the thermal stress and compressive stress generated by the post-baked laser peeling process can be affected by the impact on the crystal structure of the light-emitting layer 9 200828623 The yield of the laser stripping process, the operation performance of the light-emitting diode-step-enhancing light-emitting element of the conductive substrate having the south conductivity and the south reflectivity, and the use of the light-emitting element is extended to enhance the brightness of the light-emitting element. The description of the present invention is more complete, and the following description can be referred to and in conjunction with the drawings of Figs. 2A to 7. Fig. 2 refers to the second to second drawings, and the reason is as follows: Process profile of a light-emitting diode. In the embodiment, the material is grown on the substrate 200 for the subsequent growth of the layer of the insect crystal material. The material of the substrate 2 (10) may be, for example, sapphire. The growth of the square crystal into the luminescent crystal structure 202 is grown by using, for example, insect crystal growth. On the surface of the substrate, in the case of 'luminous worm crystals, the luminescent layer can be nitrided (GaN) by the melon nitride compound semiconductor, so the light-emitting diode component can also be called For the m-type nitride compound semiconductor, it is the first one, such as a gallium nitride light-emitting diode. In general, the luminescent crystal structure 202 mainly includes sequential stacking on the surface of growth=200. The first electrical semiconductor layer, the active layer, and the second electrical: bulk layer 'where the first electrical property and the second electrical property have opposite electrical properties. For example, C ", when the first electrical property is N-type, the second The electrical property is P-type; and when the first electric=, p-type, the second electrical property is N-type. Next, using the button engraving method, >: the dry-type engraving method can be used to remove the luminescent crystal 胄The specific area to be moved is as wide as the area corresponding to the predetermined cutting line to form in the luminescent epitaxial structure 202 The trenches 206 extend through the light-emitting epitaxial structure 202, wherein the trenches 2〇6 are grown to form part of the surface of the substrate 200, and the light-emitting epitaxial structure 2〇2 is separated by a light-emitting epitaxial unit 2〇4, such as the second As shown in the figure, the surface of these luminescent epitaxy is bonded to the surface of the growth substrate 200. In the present invention, the surface of the trench 206 can be a thousand faces, a paraboloid, or a curved surface, so that the illuminating day is early. The side of the crucible 204 may be a single "", a flat surface, a paraboloid, or a curved surface. Then, an insulating buffer layer 208 埴湓, a beast μ, and a trench 206 are formed to cover the side of each of the luminescent epitaxial cells 204 to Isolation of private. Ishigaki-suppressed one by one ^ # & light cat day and night 2兀4 and the subsequent formation of conductive - dioxide sand: makeup 2B). The material of the insulating buffer layer 208 can be, for example, ΐ ΓΓ 1, nitrogen cut (SiNx), titanium oxide (Ti〇x), and oxidized (a team) =, = group. Subsequently, using, for example, the hot steaming method, the electronic 广丽丽.- on/l 心成弟 an electric electrode 210 is located in the illuminating lei f day and morning 7G 204 and the insulating buffer layer 2〇s two f丄槿 / 士士士The structure as shown in Fig. 2A is formed. In the present invention, the second mine #雷 is. The Gans # electrode 210 can be an opaque ohmic reflective electrode. Among them, the second electric electrode 2 1 〇 把 ” / / 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 "Self / person... 拍 / 钌 titanium / face / gold, Ji / nickel, nickel / handle / gold, platinum / nickel / gold, 钌 / gold, sharp / gold, recorded / gold, platinum #, ',, / nickel /cup, nickel/platinum, nickel indium, and indium (Ptjn7) are grouped into one group. Then, using the electric money method or the deposition method, the conductive substrate 212 is formed on the second electrode 210. For example, the 2B „张—^/弟2B map does not. The material of the conductive substrate 212 is preferably a metal having good conductivity and a reflectance of ^^. In the present invention, the material of the conductive substrate 212 may be, for example, copper or a cluster. A group of molybdenum-nickel and aluminum is to be used to complete the conductive substrate 2 12, and the shovel point is 丄 丄 amp amp , , , , , , , , , , , , , , , 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄The light-emitting edge buffer layer 208 is exposed as shown in FIG. 2C.曰凡", ', because, illuminating epitaxial unit 204 outside the gamma; l 士. ^, L on the outer side of the surface of the insulating buffer layer 208 coating, so that the luminescent epitaxial unit 2 〇 4 Xingdi-electricity The electrode 210 and the conductor 11 200828623 are not directly joined to each other and are blocked by the insulating buffer layer 2〇8. Therefore, when the growth substrate 200 is peeled off by the laser 214, the buffer layer of the insulating buffer layer 2〇8 is used. The thermal stress and compressive stress induced between the luminescent epitaxial unit 2〇4 and the _ conductive substrate 212 during the laser stripping process can be effectively reduced, and the impact on the bonding interface between the luminescent unit 204 and the conductive substrate 212 can be reduced. Further, the uniformity and integrity of the transfer of the light-emitting epitaxial unit 204 to the conductive substrate 21 2 can be improved to achieve the purpose of improving the transfer reliability and the quality of the light-emitting epitaxial unit 204. (After stripping the growth substrate 200, for example, using The hot steaming method, the electron beam evaporation method or the ion sputtering method forms a plurality of first electrical electrodes 216 respectively corresponding to the luminescent epitaxial unit 204 and located on a portion of the exposed surface of the corresponding luminescent epitaxial unit 2〇4. As shown in Figure 2D. The material of the first electrical electrodes 2 i 6 may be selected, for example, from indium, aluminum, titanium, gold, tungsten, indium tin, titanium nitride, tungsten, uranium indium (Ptin2), palladium/salt. , nickel / stone eve, button / sho, titanium / silver, bismuth / silver, titanium / no, titanium / gold, titanium / titanium nitride, wrong / nitrided, gold / enamel / inlay, chrome / nickel / gold, Nickel/chromium/gold, titanium/!bar/gold, titanium/face/gold, titanium/shovel/nickel/gold, gold/shixi/titanium/gold/shixi and gold/nickel/titanium/bismuth/titanium As such, the first electrical electrode 216 is electrically coupled to the first electrical semiconductor layer of the luminescent epitaxial unit 204, and the first electrical electrode 210 and the second electrical semiconductor of the luminescent amorphous cell 204 Layer ♦ Electrical bonding. • Next, a segmentation step may be performed to separate the luminescent epitaxial elements 204. In the entanglement step, the trenches 206 between the adjacent two illuminating epitaxial cells 2〇4 may be Cutting is performed, and all the light-emitting epitaxial cells 2〇4 are separated from the corresponding first electrical electrode 216 and second electrical electrode 21〇, and the lower conductive substrate 12 200828623 plate 212, and the light-emitting diode is completed. 218 system For example, e and FIG. 2F are shown. " From the light-emitting diodes 218A of FIG. 2E and FIG. 2F, it can be clearly seen that the second electrical electrode 21 of the light-emitting diode 218 The illuminating ζ ζ is located on the conductive substrate 212. The illuminating crystal unit 204 is disposed on the second electrical electrode 2 包 on the 21 〇, and the insulating buffer layer is interposed between the second electrical electrode 210 and the luminescent crystal unit. The first electrical electrode 216 is disposed on the surface of the light-emitting antenna unit 204 and is opposite to the second electrical electrode (210 °, see FIG. 4, In another embodiment of the present invention, before the conductive substrate 212 is formed in the above embodiment (such as the structure of the second figure), the reflective layer 222 is first formed to cover the second electrical electrode 21〇 to emit light. The insect crystal unit 204 reflects the light emitted from the conductive substrate 212 to achieve an effect of increasing the light extraction rate of the element. In this embodiment, the second electrical electrode 2 〇 can be a transparent ohmic electrode, and the material of the second electrical electrode 21 可 can be indium tin oxide.
Kb鋅 '氧化鋼 '氧化錫 '氧化銅銘、氧 〇化銅鎵以及氧化鳃銅所組成之—族群。接著，於反射層222 上設置導電基板212,再經後續製程後可獲得如第4圖所示之 發光二極體226。在發光二極體226中，反射層222位於導電 基板2i2上，其中反射層222之材料可選自於由銀、金、始、 銅、鎳、鋅、鋁、鈀以及鈀錫所組成之一族群。第二電性電 極210位於反射層222上，發光磊晶單元2〇4設於第二電性 電極210上，而絕緣緩衝層2〇8則圍繞在發光磊晶單元2〇4 之侧面外，第一電性電極216則位在發光磊晶單元2〇4的表 13 200828623 面上且相對於第二電性電極21 〇。 請參照第3Α圖至第3Ε圖，其係繪示依照本發明另一較 佳實施例的一種發光二極體之製程剖面圖。在本示範實施例 _中，先提供成長基板300，以供後續磊晶材料層成長於其上其 中成長基板300之材料可例如為藍寶石。再利用例如磊晶成 長方式形成發光磊晶結構3〇2於成長基板3〇〇之表面上。曰在 本貫施例中，發光磊晶結構3〇2可由皿族氮化物化合物半導 體^例如氮化鎵，因此所製成之發光二極體元件亦可稱為瓜 私虱化物化合物半導體發光二極體，例如氮化鎵發光二極 體。通常，發光磊晶結構3〇2主要包括依序堆疊 _之表面的第-電性半導體層、主動層以及第二電^ = 層其中第-電性與第二電性具有相反之電性。在本實施例 中，第-電性電極為㈣，第二電性電極為p型。接著，利 用钱刻方式，較佳可利用乾式姓刻法，移除發光蠢晶結構302 、、、口構302中形成數個溝槽貫穿發光蟲晶結構奶，並中這 暴露出成長基板300之部分表面，而將發光蟲晶 、-、口構302为隔成多個發光蠢晶單元3〇4，如第3Α圖所示。這 =發光Μ單，3〇4之—表面與成長基板扇之表面接合。 本4月中k些溝槽鳩之側面可為平面、拋物面 :，：此！光蟲晶單元304之侧面可為平面、抱物面、或曲 接下來，—形成絕緣谬308填入這些溝槽鳩中，其中絕 緣膠308覆蓋住每_個發光蟲曰 勝3。8包圍住每個發光=:;:304之側面，亦即絕緣 九猫日日早兀304之側面，以隔離發光磊 14 200828623 日日早元304與後續形成之導雷 等笔基板312(請先參照第3B圖）。 、、、巴緣膠308之材料可例如為蝥 丁… J馬來亞醯胺、苯并環丁烷、過氟環 =環氧樹脂。接著’利用例如熱蒸鍵法、電子束蒸鍍法 2子濺鍍法，形成第二電性電極川位於發光^單元3〇4 的暴露表面與絕緣膠308上，而形士、上μ，Λ门 向形成如第3Α圖所示之結構。 在本發明中1這些第二電性電極3U)可為不透明歐姆反射電 和-中k二第一電性電極3 j 〇之材料可例如選自於由錄/ 金、氧化鎳/金、飽/銀/金/鈦/金、麵/釘、欽金、纪/錄、錄 /麵/金、16/錄/金、舒/金、銳/金、姑/金、…鎳/金、錄/始、 鎳銦以及鉑銦（Pt3In7)所έ且杰夕 # # V 3 7)所、、且成之一族群。然後，利用電鍍法或 沉積法’形成導電基板312覆蓋在第二電性電極3ι〇，其中導 電基板312直接覆蓋在第二電性電極31〇上，如第3b圖所示。 導電基板312之材料較佳係採用具導電性佳且反射率好之全 屬。在本發明中’導電基板312之材料可例如為銅、翻、錄 或鋁所組成之一族群。 待完成導電基板312 |，利用例如雷射剝離方式，以雷 L射3 14來剝除成長基板300，而暴露出發光磊晶單元與成 長基板300接合之表面與絕緣膠308，如第3C圖所示。 由於，發光磊晶單元304之外側面為絕緣膠3〇8所覆蓋 包圍，如此可使發光磊晶單元304與導電基板312之間不= 接接合而為絕緣膠308所阻隔。因此，利用雷射314剝除成 長基板300時，藉由絕緣膠308所提供之緩衝，同樣可大怦 降低雷射剝離過程中在發光磊晶單元3〇4與導電基板3 12田 間所引發之熱應力與壓應力，而可減輕對發光蠢晶單元3 15 200828623 與導電基板312之接合介面的衝藝， 元304韓移至導雷美;而可長1升發光蠢晶單 疋304轉…電基板312的均勾性與完整 移可靠度與發光磊晶單元304之品質的目的。違到耠呵轉 剝除成長基板300後，利用也丨 交 用例如熱蒸鍍法、電子東蒗缺 法或離子濺鍍法，形成數個第一電 于果…鍍 光蠢晶單it 304且位於對應之發光石日…6刀㈣應於發 的一部分上，如第則所示。；^二二304的暴露表面 共甲，弟一電性電極3 1 6之姑 料可為選自於由銦、鋁、鈦、全、锥之材 始h 金鎢、銦錫、氮化鈦、矽化 鎢、鉑銦（Ptln2)、鈀/鋁、鎳/矽、 銘鈦/銀、纽/銀、鈦/ 、’呂、欽/金、欽/氮化欽、錐/氮化梦 处 L化鉛金/鍺/鎳、鉻/鎳/金、鎳/ 鉻/金、鈦/鈀/金、鈦/翻/金、鈦/叙 級/銘/鎳/金、金/矽/鈦/金/矽以及 金/鎳/鈦/矽/鈦所組成之一族群。 〒在本發明中，第一電性電極 3 與發光磊晶單元304中之第一雷祕主道触政兩 —一 τ心弟冤性+導體層電性接合，而 弟二電性電極31〇與發光磊 知兀猫日日早兀304中之第二電性半導體 層電性接合。 接著，可進行分割步驟，以分離這些發光磊晶單元3〇4。 〇進行分割步驟時，可沿著相鄰之二發光蠢晶單元3〇4之間的 溝槽306進行切割，而將所有之發光蟲晶單元3()4連同對應 之第一電性電極316與第二電性電極31〇、以及下方之導電基 板312予以分離，而完成發光二極體318的製作，如第3E圖 所示。 從第3E圖之發光二極體318結構中可知，絕緣膠3〇8設 ^第一電性電極310之表面上，而絕緣膠3〇8圍繞在發光磊 曰曰單几304之側面外，第二電性電極3丨〇位於發光磊晶單元 16 200828623 3 04與導電基板312之間。發光磊晶單元3〇4位於第二電性電 極310上亦即發光蟲晶單元304之一表面與第二電性電極 310直接接合，其中發光磊晶單元3〇4為絕緣膠3〇8所圍繞。 第一電性電極316則位在發光磊晶單元3〇4的暴露表面上且 相對於第二電性電極3 1 〇。 睛參照第5 B，在本發明之另—實施例中，可在前述實 施例尚未形成導電基板312之前（如第3A圖之結構），先形成 反射層322直接覆蓋在第二電性電極上，以將發光蟲晶 Γ單元304朝導電基板312所發出之光予以反射，.而達到增= 一件之光取出率的效果。然後，於反射層上設置導電基 板312，再經後續製程後可獲得如帛5圖所示之發光二極體 324。在發光二極體324中，反射層322位於導電基板Η]上， 其中反射層322之材料係選自於由銀、金、始、銅、錄、辞、 銘、飽以及飽錫所組成之—族群。反射層322介於導電基板 312之表面與第二電性電極31〇之間。第二電性電極31〇位於 反^層322上，其中第二電性電極31〇可為透明歐姆電極， 1:弟—電性電極310之材料可選自於由氧化銦錫、氧化鎘錫、 =辞、、氧化銦、氧化錫、氧化触、氧化銅鎵以及氧化銷 '•s、且成t《群。發光蟲晶單元3G4位於第二電性電極則 姑亦即發光蟲晶單元304之一表面與第二電性電们1〇直Kb zinc 'oxidized steel' tin oxide 'copper oxide Ming, oxygen copper gallium telluride and copper beryllium oxide group - group. Next, a conductive substrate 212 is disposed on the reflective layer 222, and after subsequent processing, the light-emitting diode 226 as shown in FIG. 4 is obtained. In the light-emitting diode 226, the reflective layer 222 is located on the conductive substrate 2i2, wherein the material of the reflective layer 222 may be selected from one of silver, gold, tin, copper, nickel, zinc, aluminum, palladium, and palladium tin. Ethnic group. The second electrical electrode 210 is disposed on the reflective layer 222, the luminescent epitaxial unit 2〇4 is disposed on the second electrical electrode 210, and the insulating buffer layer 2〇8 is disposed outside the side of the luminescent epitaxial unit 2〇4. The first electrical electrode 216 is located on the surface of the illuminating epitaxial unit 2 〇 4 on the surface of the table 13 200828623 and is opposite to the second electrical electrode 21 〇. Referring to Figures 3 through 3, there is shown a process cross-sectional view of a light emitting diode in accordance with another preferred embodiment of the present invention. In the present exemplary embodiment, the growth substrate 300 is first provided for the subsequent epitaxial material layer to be grown thereon. The material for growing the substrate 300 may be, for example, sapphire. Further, a light-emitting epitaxial structure 3? 2 is formed on the surface of the growth substrate 3 by, for example, epitaxial growth. In the present embodiment, the light-emitting epitaxial structure 3〇2 may be a nitride-based compound semiconductor such as gallium nitride, and thus the light-emitting diode element may also be referred to as a compound semiconductor semiconductor light-emitting diode. A polar body such as a gallium nitride light emitting diode. Generally, the luminescent epitaxial structure 3 〇 2 mainly includes a first-electroconductive semiconductor layer, an active layer, and a second electrical layer, which are sequentially stacked, wherein the first electrical property and the second electrical property have opposite electrical properties. In this embodiment, the first electrical electrode is (four) and the second electrical electrode is p-type. Then, using the money engraving method, it is preferable to use the dry-type method to remove the light-emitting crystal structure 302, and form a plurality of grooves in the mouth structure 302 to penetrate the luminescent crystal structure milk, and the exposed substrate 300 is exposed. Part of the surface, and the luminescent crystal, -, and the mouth 302 are separated into a plurality of light-emitting cells 3〇4, as shown in FIG. This = illuminating sheet, 3 〇 4 - the surface is joined to the surface of the growing substrate fan. In the middle of this April, the sides of some trenches can be flat and parabolic: :: This! The side surface of the light insect crystal unit 304 may be a flat surface, a hug surface, or a curved next, forming an insulating crucible 308 filled in the trench crucibles, wherein the insulating rubber 308 covers each of the light-emitting insects to win over 3. 8 The side of each illuminating =:;:304, that is, the side of the insulated nine cats day and night 304, to isolate the illuminating Lei 14 200828623 day and morning 304 and subsequent formation of the thunder and other pen substrate 312 (please refer first Figure 3B). The material of the glutinous rubber 308 can be, for example, 蝥... J. melamine, benzocyclobutane, perfluorocyclo ring = epoxy resin. Then, by using, for example, a hot steam bonding method or an electron beam evaporation method, the second electrical electrode is formed on the exposed surface of the light-emitting unit 3〇4 and the insulating paste 308, and the shape, upper μ, The trick is formed into a structure as shown in Fig. 3. In the present invention, the material of the second electrical electrode 3U) may be opaque ohmic reflective electricity and - the medium k first electrical electrode 3 j 可 may be selected, for example, from the recording/gold, nickel oxide/gold, and fullness. /Silver/Gold/Titanium/Gold, Face/Nail, Chinjin, Ji/Record, Record/Face/Gold, 16/Record/Gold, Shu/Gold, Sharp/Gold, Gu/Gold,... Nickel/Gold, Record /Initial, nickel indium and platinum indium (Pt3In7) and Jay ## V 3 7), and into a group. Then, a conductive substrate 312 is formed by plating or deposition to cover the second electrical electrode 3 ι, wherein the conductive substrate 312 directly covers the second electrical electrode 31, as shown in Fig. 3b. Preferably, the material of the conductive substrate 312 is made of a conductive material and a good reflectance. In the present invention, the material of the conductive substrate 312 may be, for example, a group consisting of copper, turn, record or aluminum. After the conductive substrate 312 is completed, the growth substrate 300 is stripped by the laser light removal method by, for example, a laser lift-off method, and the surface of the light-emitting epitaxial unit bonded to the growth substrate 300 and the insulating paste 308 are exposed, as shown in FIG. 3C. Shown. The outer surface of the illuminating epitaxial unit 304 is surrounded by the insulating adhesive 3〇8, so that the illuminating epitaxial unit 304 and the conductive substrate 312 can be prevented from being joined by the insulating adhesive 308. Therefore, when the growth substrate 300 is stripped by the laser 314, the buffer provided by the insulating adhesive 308 can also greatly reduce the occurrence of the light-emitting epitaxial unit 3〇4 and the conductive substrate 312 during the laser stripping process. The thermal stress and the compressive stress can alleviate the bonding of the bonding interface between the light-emitting unit 3 15 200828623 and the conductive substrate 312, and the element 304 is moved to the thunder-semiconductor; The purpose of the uniformity and integrity of the electrical substrate 312 and the quality of the light-emitting epitaxial unit 304. After turning off the growth substrate 300, the first substrate is formed by using, for example, thermal evaporation, electron doping or ion sputtering, to form a plurality of first electric fruits. And located in the corresponding illuminating stone day... 6 knives (four) should be on the part of the hair, as shown in the first. ; ^二二304 exposed surface common armor, brother-electrical electrode 3 16 6th material may be selected from indium, aluminum, titanium, full, cone material h gold tungsten, indium tin, titanium nitride , Tungsten Oxide, Platinum Indium (Ptln2), Palladium/Aluminum, Nickel/Yttrium, Ming Titanium/Silver, New/Silver, Titanium/, Lu, Chin/Gold, Chin/Nitride, Cone/Nitrix Dream L Lead gold/bismuth/nickel, chromium/nickel/gold, nickel/chromium/gold, titanium/palladium/gold, titanium/turn/gold, titanium/class/inscription/nickel/gold, gold/bismuth/titanium/gold /矽 and a group of gold/nickel/titanium/bismuth/titanium. In the present invention, the first electrical electrode 3 and the first sacred main channel in the luminescent epitaxial unit 304 are electrically connected to each other, and the second electrical electrode 31 is electrically connected. The 〇 and the illuminating light are electrically connected to the second electrical semiconductor layer of the cat. Next, a dividing step may be performed to separate the luminescent epitaxial units 3〇4. When the dividing step is performed, the cutting may be performed along the groove 306 between the adjacent two light emitting cells 3〇4, and all the light emitting crystal unit 3() 4 together with the corresponding first electrode 316 The second electrical electrode 31A and the lower conductive substrate 312 are separated to complete the fabrication of the light-emitting diode 318 as shown in FIG. 3E. It can be seen from the structure of the light-emitting diode 318 of FIG. 3E that the insulating adhesive 3〇8 is disposed on the surface of the first electrical electrode 310, and the insulating adhesive 3〇8 is disposed on the side of the light-emitting surface. The second electrical electrode 3 is located between the luminescent epitaxial unit 16 200828623 34 and the conductive substrate 312. The illuminating epitaxial unit 3 〇 4 is located on the second electrical electrode 310, that is, one surface of the illuminating unit 104 is directly bonded to the second electrical electrode 310, wherein the illuminating epitaxial unit 3 〇 4 is an insulating adhesive 3 〇 8 around. The first electrical electrode 316 is located on the exposed surface of the luminescent epitaxial unit 3〇4 and is opposite to the second electrical electrode 3 1 〇. Referring to FIG. 5B, in another embodiment of the present invention, before the conductive substrate 312 is formed in the foregoing embodiment (as in the structure of FIG. 3A), the reflective layer 322 is first formed to directly cover the second electrical electrode. In order to reflect the light emitted by the illuminating crystal unit 304 toward the conductive substrate 312, the effect of increasing the light extraction rate of one piece is achieved. Then, a conductive substrate 312 is disposed on the reflective layer, and after subsequent processing, the light-emitting diode 324 as shown in FIG. 5 can be obtained. In the light-emitting diode 324, the reflective layer 322 is located on the conductive substrate ,], wherein the material of the reflective layer 322 is selected from the group consisting of silver, gold, beginning, copper, recording, remarks, Ming, saturating, and saturating tin. - Ethnic groups. The reflective layer 322 is interposed between the surface of the conductive substrate 312 and the second electrical electrode 31A. The second electrical electrode 31 is located on the reverse layer 322, wherein the second electrical electrode 31A can be a transparent ohmic electrode, and the material of the first-electrode electrode 310 can be selected from indium tin oxide and cadmium tin oxide. , =,, indium oxide, tin oxide, oxidized touch, copper oxide gallium oxide and oxidation pin '•s, and into t group. The illuminating crystal unit 3G4 is located at the second electrical electrode, that is, the surface of one of the illuminating unit 104 and the second electric device are straight.
合’其中發光蟲晶單元304為絕緣膠3〇8所圍繞。第一 電性電極3 1 6則位在♦井石a留-,A J L 於楚 M立在毛光猫日日早兀304的暴露表面上且相對 ;弟一電性電極3 1 0。 請參照第6圖，在本發明之又一實施例中，可在第3A圖 17 200828623 ▲弟止Θ所述之實施例尚未形成絕緣膠308填入溝槽3〇 月”先形成絕緣緩衝層326覆蓋在每個發光蠢晶單元％ 則面上’再將絕緣膠308填入溝槽306巾，其中絕緣緩 326與絕緣膠3〇8均可作為導電基板312與發光蠢晶θ 之間的應力緩衝結構。絕緣緩衝I似之材料可例如為氧化4 f (SHDm邦iNx)、氧化鈦（TiC)x)s氧化 等 物，组成之：族群。然後，即可設置導電基板312覆= 緣膠 3 0 8 與第二 Φ Φ ^ 1 η 、巴 一 電極310，再經後續製程後可獲得如第6 所示之發光二極體330。在發光二極體33〇中 ^ 與絕緣緩衝層326設於第二電性電極則之表面上，且8 緩衝層326覆蓋在發光單元3〇4之側面。第二電性電極Υι〇 可為不透明歐姆反射電極’其中第二電性電極3ig之材料可 為“於由鎳/金、氧化鎳/金、鈀/銀/金/鈦/金、鉑，釕、鈦/ 鉑/金、把/錄、鎳/把/金、鈾/鎳/金、釘/金、銳/金、钻/金、始 /錄/金、鎳/銘、鎳銦以及麵銦（pt3ln7W組成之一族群。發光 蠢晶單元304位於第二電性電極31()上，亦即發光蟲晶^元 〇 304之-表面與第二電性電極31()直接接合，其中發光蟲晶單 兀304為絕緣緩衝層326與絕緣膠3〇8所圍繞。第—電性電 極316則位在發光磊晶單元3〇4的暴露表面上且相對於第二 電性電極310,其中第一電性電極316之材料可為選自於由 10鋁鈦、金、鶴、銦錫、氮化欽、石夕化鶴、翻鋼（Ptlk)、 鈀/銘、鎳々、鈕/紹、鈦/銀、鈕/銀、鈦/銘、鈦/金、鈦/氮化 欽、錯/氮化錯、金/鍺/錄、鉻/錄/金、錄/鉻/金、鈦/把/金、鈦 /翻/金、欽/紹/鎳/金、金/石夕/鈦/金/石夕以及金/鎳/鈦/石夕/欽所組 18 200828623 成之一族群。 凊參照第7圖，於本發明之再一實施例中，可在第6圖 所述之實施=尚未形成導電基板312之前，先形成反射層332 •直接覆蓋在第二電性電極310 i，以將發光蠢晶單元3〇4朝 ‘電基板3 12所發出之光予以反射，而達到增進元件之光取 出率的效果。其中，反射層332之材料係選自於由銀、金、 鉑、銅、鎳、鋅、鋁、鈀以及鈀錫所組成之一族群。然後， 於反射層332上設置導電基板312，再經後續製程後可獲得如 〇第7圖所示之發光二極體334。在發光二極體334中，反射層 332位於導電基板312上，且介於導電基板312之表面與第二 電性電極310之間。第二電性電極31〇位於反射層上， 其中第二電性電極332可為透明歐姆電極，且第二電性電極 332之材料可為選自於由氧化銦錫、氧化鎘錫、氧化辞、氧化 銦、乳化錫、氧化銅鋁、氧化銅鎵以及氧化锶銅所組成之一 族群。 發光磊晶單兀304位於第二電性電極3丨〇上，亦即發光 L磊晶單元304之一表面與第二電性電極31〇直接接合，其中 發光磊晶單元304為絕緣緩衝層326與絕緣膠3〇8所圍繞。 第一電性電極3丨6則位在發光磊晶單元3〇4的暴露表面2且 相對於第二電性電極310，其中第一電性電極316之材料可為 選自於由銦、紹、鈦、金、鶴、銦錫、氮化欽、石夕化鶴、翻 鋼（Ptln2)、把/铭、鎳/石夕、紹、鈦/銀、鈕邊、鈦巉、欽/ 金、鈦/氮化鈦、锆/氮化鍅、金/鍺/鎳、鉻/鎳/金、鎳/絡/金、 鈦/!巴/金、鈦/始/金、鈦/銘/鎳/金、金/石夕/鈥/金/石夕以及金/錄/ 19 200828623 鈦/梦/鈦所組成之一族群。 由上述本發明較佳實施例可知，本發明之—優點就是因 為本發明之#光二極體具有Μ電性I高反射率4導 板，因此可提高發光二極體之散熱效能與光取出率，進而； 達到提升發光二極體元件之操作效能與亮度之目的。 - 由上述本發明較佳實施例可知’本發明之另—優 因為在本發明之發光二極體之製造方法中，係在f作導雷 板之前，先在發光m構中形成數個溝槽，再於溝槽之ς Γ壁上设置絕緣緩衝層及/或於溝槽中填入絕緣膠，接著言 電基板於發光磊晶結構上。如此一 口又 程移除成長基板時，可大大地降 ：二射剝離製 _ I私”、、應力與壓應力對發 晶結構所造成之衝擊。因此’可提升雷射剝離 率，並可提高發光蠢晶結構的品質，進而可提 元件之操作品質，並延長元件之使用壽命。 -極體 發明已以一較佳實施例揭露如上，然其並非用以 二Γ在此技術領域中具有通常知識者，在不脫 H 範圍内，當可作各種之更動與潤飾，因此 毛月之保4範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 !:A圖至第1D圖係繪示傳統發光二極體之製程剖面圖。 :1圖至弟2E圖係繪示依照本發明一較佳實施例的一 種毛光一極體之製程剖面圖。 第2F圖係繪示依照本發明-較佳實施例的-種發光二極 20 200828623 體之上視圖。 弟3A圖至第 圖係、、、曰不依照本發明另一較佳實施例的 一種發光二極體之製程剖面圖。 弟4圖係緣示依昭太恭 m…、本毛明再一較佳實施例的一種發光二 極體之剖面示意圖。 、 第5圖係纟f不依照本發明再一較佳實施例的一種發光二 極體之剖面示意圖。 第6圖係繪示依照本發明再一較佳實施例的一種發光二 ( 極體之剖面示意圖。 第7圖係繪示依照本發明再一較佳實施例的一種發光二 極體之剖面示意圖。 主要元件符號說明】 100 ： 永久基板 104 ： 發光磊晶結構 108 ： 發光磊晶單元 112 ： 溝槽 116 ： 壓力 120 : 電極 202 ： 發光磊晶結構 206 ： 溝槽 210 : 第二電性電極 214 ： 雷射 218 ： 發光二極體The light-emitting unit 104 is surrounded by an insulating glue 3〇8. The first electrical electrode 3 16 is located at ♦ well stone a -, and A J L is on the exposed surface of the hairy cat day and morning 304 and opposite; the other is an electric electrode 3 10 . Referring to FIG. 6 , in another embodiment of the present invention, the insulating buffer 308 may be formed in the embodiment described in FIG. 3A, FIG. 17 200828623, and the insulating buffer 308 is not formed. 326 is overlaid on the surface of each of the light-emitting cells, and then the insulating paste 308 is filled into the trenches 306, wherein the insulating buffer 326 and the insulating paste 3 〇 8 can be used as the conductive substrate 312 and the light-emitting crystal θ. The stress buffer structure. The material of the insulation buffer I can be, for example, oxidized 4 f (SHDm state iNx), titanium oxide (TiC) x) s oxide, etc., and is composed of: a group. Then, the conductive substrate 312 can be disposed. After the glue 3 0 8 and the second Φ Φ ^ 1 η , the Ba-electrode 310, the LED diode 330 as shown in FIG. 6 can be obtained through the subsequent process. In the light-emitting diode 33〇 and the insulating buffer layer 326 is disposed on the surface of the second electrical electrode, and 8 buffer layer 326 covers the side of the light emitting unit 3〇4. The second electrical electrode Υι〇 may be an opaque ohmic reflective electrode 'where the second electrical electrode 3ig The material can be "from nickel/gold, nickel oxide/gold, palladium/silver/gold/titanium/gold, platinum, rhodium, titanium/ /金,把 /录, nickel / handle / gold, uranium / nickel / gold, nail / gold, sharp / gold, diamond / gold, start / record / gold, nickel / Ming, nickel indium and indium (pt3ln7W a group of light-emitting cells 304 are located on the second electrical electrode 31 (), that is, the surface of the light-emitting silicon wafer 304 is directly bonded to the second electrical electrode 31 (), wherein the light-emitting insect crystal unit 304 The insulating buffer layer 326 is surrounded by the insulating adhesive 3〇8. The first electrical electrode 316 is located on the exposed surface of the light emitting epitaxial unit 3〇4 and opposite to the second electrical electrode 310, wherein the first electrical electrode The material of 316 may be selected from the group consisting of 10 aluminum titanium, gold, crane, indium tin, nitriding chin, Shi Xihua crane, Ptlk, palladium/Ming, nickel ruthenium, button/sau, titanium/silver, Button / silver, titanium / Ming, titanium / gold, titanium / nitride, wrong / nitriding, gold / 锗 / record, chrome / record / gold, recorded / chrome / gold, titanium / handle / gold, titanium / Turning/Gold, Chin/Shool/Nickel/Gold, Gold/Shixi/Titan/Gold/Shixi and Gold/Nickel/Titanium/Shixi/Chin Group 18 200828623 into one group. 凊 Refer to Figure 7, In still another embodiment of the present invention, the implementation can be performed as shown in FIG. 6 = the conductive substrate 312 has not been formed yet. Before, the reflective layer 332 is formed first; directly covering the second electrical electrode 310 i to reflect the light emitted by the light-emitting dummy unit 3〇4 toward the 'electric substrate 3 12 to achieve a light extraction rate of the component. The material of the reflective layer 332 is selected from the group consisting of silver, gold, platinum, copper, nickel, zinc, aluminum, palladium, and palladium tin. Then, the conductive substrate 312 is disposed on the reflective layer 332. After the subsequent process, the light-emitting diode 334 as shown in FIG. 7 can be obtained. In the light-emitting diode 334, the reflective layer 332 is located on the conductive substrate 312 and between the surface of the conductive substrate 312 and the second electrical electrode 310. The second electrical electrode 31 is located on the reflective layer, wherein the second electrical electrode 332 can be a transparent ohmic electrode, and the material of the second electrical electrode 332 can be selected from the group consisting of indium tin oxide, cadmium tin oxide, and oxidation. A group consisting of indium oxide, emulsified tin, copper oxide aluminum, copper oxide gallium, and copper beryllium oxide. The illuminating epitaxial unit 304 is located on the second electrical electrode 3 , that is, the surface of one of the illuminating L epitaxial units 304 is directly bonded to the second electrical electrode 31 , , wherein the illuminating epitaxial unit 304 is an insulating buffer layer 326 . Surrounded by insulating rubber 3〇8. The first electrical electrode 3丨6 is located on the exposed surface 2 of the luminescent epitaxial unit 3〇4 and opposite to the second electrical electrode 310. The material of the first electrical electrode 316 may be selected from indium, , titanium, gold, crane, indium tin, nitrided Qin, Shi Xihua crane, steel (Ptln2), put / Ming, nickel / Shi Xi, Shao, titanium / silver, button edge, titanium, Qin / gold, Titanium / titanium nitride, zirconium / tantalum nitride, gold / niobium / nickel, chromium / nickel / gold, nickel / complex / gold, titanium /! Bar / gold, titanium / start / gold, titanium / Ming / nickel / gold , Jin / Shi Xi / 鈥 / gold / Shi Xi and gold / recorded / 19 200828623 Titanium / dream / titanium composed of one ethnic group. According to the preferred embodiment of the present invention, the advantage of the present invention is that the optical diode of the present invention has a Μ-electricity I high-reflectivity 4-lead plate, thereby improving the heat dissipation performance and light extraction rate of the light-emitting diode. And further; achieving the purpose of improving the operational efficiency and brightness of the LED component. - It is apparent from the above-described preferred embodiments of the present invention that the invention is further preferred because in the method of fabricating the light-emitting diode of the present invention, a plurality of grooves are formed in the light-emitting m structure before f is used as the guide plate. The trench is further provided with an insulating buffer layer on the sidewall of the trench and/or an insulating paste is filled in the trench, and then the electrical substrate is on the light emitting epitaxial structure. Such a process of removing the growth substrate can greatly reduce the impact of the two-shot peeling system, stress and compressive stress on the crystal structure. Therefore, the laser peeling rate can be improved and can be improved. The quality of the light-emitting structure can further improve the operating quality of the component and prolong the service life of the component. The polar body invention has been disclosed above in a preferred embodiment, but it is not used in the technical field. Those who are knowledgeable, in the range of not departing from H, can make various changes and refinements. Therefore, the scope of the term of the month of Maoyue shall be subject to the definition of the patent application scope attached to the application. [Simplified illustration] 1D is a cross-sectional view showing a process of a conventional light-emitting diode. FIG. 1 to FIG. 2E are cross-sectional views showing a process of a hair-light-polar body according to a preferred embodiment of the present invention. A top view of a light-emitting diode 20 200828623 in accordance with the present invention - a preferred embodiment. A light-emitting diode according to another preferred embodiment of the present invention is shown in FIG. Process profile view. A cross-sectional view of a light-emitting diode according to a preferred embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a light-emitting diode according to still another preferred embodiment of the present invention. 6 is a cross-sectional view of a light-emitting diode according to still another preferred embodiment of the present invention. FIG. 7 is a cross-sectional view of a light-emitting diode according to still another preferred embodiment of the present invention. Schematic diagram of main component symbols: 100: permanent substrate 104: luminescent epitaxial structure 108: luminescent epitaxial unit 112: trench 116: pressure 120: electrode 202: luminescent epitaxial structure 206: trench 210: second electrical electrode 214 : Laser 218 : Light-emitting diode
102·接合金屬層 1〇6 :成長基板 11 〇 :電極 114 :雷射 118 :發光二極體 2 〇 〇 :成長基板 204 :發光磊晶單元 208 :絕緣緩衝層 212 :導電基板 216 :第一電性電極 222 :反射層 21 200828623 226 ： 發光二極體 300 ： 302 ： 發光蠢晶結構 304 ： 306 ： 溝槽 308 ： 310 ： 第二電性電極 312 ： 314 ： 雷射 316 ： 318 ： 發光二極體 322 ： 324 ： 發光二極體 326 ： 330 ： 334 ： 發光二極體 發光二極體 332 ： 成長基板 發光蠢晶早元 絕緣膠 導電基板 第一電性電極 反射層 絕緣缓衝層 反射層 22102·bonding metal layer 1〇6: growth substrate 11 〇: electrode 114: laser 118: light-emitting diode 2 〇〇: growth substrate 204: light-emitting epitaxial unit 208: insulating buffer layer 212: conductive substrate 216: first Electrical electrode 222: reflective layer 21 200828623 226 : light emitting diode 300 : 302 : light emitting crystal structure 304 : 306 : trench 308 : 310 : second electrical electrode 312 : 314 : laser 316 : 318 : light emitting two Polar body 322 : 324 : Light-emitting diode 326 : 330 : 334 : Light-emitting diode light-emitting diode 332 : Growth substrate light-emitting crystal Early insulating rubber conductive substrate First electrical electrode reflective layer Insulation buffer layer Reflective layer twenty two