WO2009126010A3 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
WO2009126010A3
WO2009126010A3 PCT/KR2009/001886 KR2009001886W WO2009126010A3 WO 2009126010 A3 WO2009126010 A3 WO 2009126010A3 KR 2009001886 W KR2009001886 W KR 2009001886W WO 2009126010 A3 WO2009126010 A3 WO 2009126010A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
conductive semiconductor
semiconductor layer
layer formed
Prior art date
Application number
PCT/KR2009/001886
Other languages
English (en)
French (fr)
Other versions
WO2009126010A2 (ko
Inventor
송준오
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080033966A external-priority patent/KR101428068B1/ko
Priority claimed from KR20080033967A external-priority patent/KR101480552B1/ko
Priority claimed from KR1020080033987A external-priority patent/KR101449032B1/ko
Priority claimed from KR1020080033986A external-priority patent/KR101428069B1/ko
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to US12/937,453 priority Critical patent/US9543467B2/en
Publication of WO2009126010A2 publication Critical patent/WO2009126010A2/ko
Publication of WO2009126010A3 publication Critical patent/WO2009126010A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 제1 도전형의 반도체층; 상기 제1 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제2 도전형의 반도체층; 상기 제2 도전형의 반도체층 상에 슈퍼래티스 구조층; 및 상기 슈퍼래티스 구조층 상에 투과성 전도성 박막으로 형성된 제1 전류 퍼짐층을 포함한다.
PCT/KR2009/001886 2008-04-12 2009-04-13 발광 소자 WO2009126010A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/937,453 US9543467B2 (en) 2008-04-12 2009-04-13 Light emitting device

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR1020080033966A KR101428068B1 (ko) 2008-04-12 2008-04-12 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
KR10-2008-0033966 2008-04-12
KR10-2008-0033967 2008-04-12
KR20080033967A KR101480552B1 (ko) 2008-04-12 2008-04-12 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
KR1020080033987A KR101449032B1 (ko) 2008-04-13 2008-04-13 플립칩 구조의 그룹 3족 질화물계 반도체 발광다이오드소자 및 이의 제조 방법
KR1020080033986A KR101428069B1 (ko) 2008-04-13 2008-04-13 플립칩 구조의 그룹 3족 질화물계 반도체 발광다이오드소자 및 이의 제조 방법
KR10-2008-0033987 2008-04-13
KR10-2008-0033986 2008-04-13

Publications (2)

Publication Number Publication Date
WO2009126010A2 WO2009126010A2 (ko) 2009-10-15
WO2009126010A3 true WO2009126010A3 (ko) 2010-01-14

Family

ID=41162419

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001886 WO2009126010A2 (ko) 2008-04-12 2009-04-13 발광 소자

Country Status (2)

Country Link
US (1) US9543467B2 (ko)
WO (1) WO2009126010A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101054984B1 (ko) * 2010-03-26 2011-08-05 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US9330911B2 (en) * 2011-08-22 2016-05-03 Invenlux Limited Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride
KR20130035658A (ko) * 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
US9576868B2 (en) * 2012-07-30 2017-02-21 General Electric Company Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices
CN103367581A (zh) * 2013-07-26 2013-10-23 东南大学 一种具有电子阻挡层结构的发光二极管
CN103474538B (zh) * 2013-09-25 2016-06-22 湘能华磊光电股份有限公司 Led外延片、其制作方法及包含其的led芯片
TWI536602B (zh) * 2013-10-25 2016-06-01 隆達電子股份有限公司 發光二極體
CN104241468A (zh) * 2014-08-27 2014-12-24 迪源光电股份有限公司 一种高外量子效率GaN基LED外延片及其制作方法
JP2016192527A (ja) * 2015-03-31 2016-11-10 ウシオ電機株式会社 半導体発光素子及びその製造方法
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340509A (ja) * 1998-05-25 1999-12-10 Nichia Chem Ind Ltd 窒化物半導体素子
JP2006128227A (ja) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
KR20070015709A (ko) * 2005-08-01 2007-02-06 엘지이노텍 주식회사 질화물 발광 소자 및 그 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1450415A3 (en) * 1993-04-28 2005-05-04 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
EP2273572B1 (en) * 1998-03-12 2015-04-29 Nichia Corporation A nitride semiconductor device
WO2003005459A1 (fr) 2001-07-04 2003-01-16 Nichia Corporation Dispositif a semi-conducteurs a base de nitrure
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
KR100601945B1 (ko) * 2004-03-10 2006-07-14 삼성전자주식회사 탑에미트형 질화물계 발광소자 및 그 제조방법
JP2006269759A (ja) * 2005-03-24 2006-10-05 Sharp Corp 窓構造半導体レーザ装置およびその製造方法
KR20070028095A (ko) 2005-09-07 2007-03-12 엘지전자 주식회사 저저항 발광 다이오드
JP2008060331A (ja) 2006-08-31 2008-03-13 Rohm Co Ltd 半導体発光素子
TWI338387B (en) * 2007-05-28 2011-03-01 Delta Electronics Inc Current spreading layer with micro/nano structure, light-emitting diode apparatus and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340509A (ja) * 1998-05-25 1999-12-10 Nichia Chem Ind Ltd 窒化物半導体素子
JP2006128227A (ja) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
KR20070015709A (ko) * 2005-08-01 2007-02-06 엘지이노텍 주식회사 질화물 발광 소자 및 그 제조 방법

Also Published As

Publication number Publication date
US9543467B2 (en) 2017-01-10
US20110140077A1 (en) 2011-06-16
WO2009126010A2 (ko) 2009-10-15

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