JP2011520270A5 - - Google Patents

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Publication number
JP2011520270A5
JP2011520270A5 JP2011507786A JP2011507786A JP2011520270A5 JP 2011520270 A5 JP2011520270 A5 JP 2011520270A5 JP 2011507786 A JP2011507786 A JP 2011507786A JP 2011507786 A JP2011507786 A JP 2011507786A JP 2011520270 A5 JP2011520270 A5 JP 2011520270A5
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Japan
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semiconductor
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semiconductor chip
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JP2011507786A
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Japanese (ja)
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JP2011520270A (ja
JP5479461B2 (ja
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Priority claimed from DE102008022942A external-priority patent/DE102008022942A1/de
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JP2011507786A 2008-05-09 2009-04-17 放射を放出する半導体チップ Active JP5479461B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008022942.3 2008-05-09
DE102008022942A DE102008022942A1 (de) 2008-05-09 2008-05-09 Strahlungsemittierender Halbleiterchip
PCT/DE2009/000546 WO2009135457A1 (de) 2008-05-09 2009-04-17 Strahlungsemittierender halbleiterchip

Publications (3)

Publication Number Publication Date
JP2011520270A JP2011520270A (ja) 2011-07-14
JP2011520270A5 true JP2011520270A5 (de) 2012-05-10
JP5479461B2 JP5479461B2 (ja) 2014-04-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011507786A Active JP5479461B2 (ja) 2008-05-09 2009-04-17 放射を放出する半導体チップ

Country Status (7)

Country Link
US (1) US8319250B2 (de)
EP (1) EP2274774B1 (de)
JP (1) JP5479461B2 (de)
KR (1) KR101590204B1 (de)
CN (1) CN102017143B (de)
DE (1) DE102008022942A1 (de)
WO (1) WO2009135457A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009053064A1 (de) * 2009-11-13 2011-05-19 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999784B1 (ko) * 2010-02-23 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
DE102010024079A1 (de) 2010-06-17 2011-12-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR101714039B1 (ko) * 2010-07-01 2017-03-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
DE102010046792A1 (de) 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
KR101154320B1 (ko) 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011011140A1 (de) * 2011-02-14 2012-08-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
KR101766298B1 (ko) * 2011-03-30 2017-08-08 삼성전자 주식회사 발광소자 및 그 제조방법
DE102011016302A1 (de) 2011-04-07 2012-10-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN102751431A (zh) * 2011-04-18 2012-10-24 北京地调科技发展有限公司 Led芯片及其制备方法
US9299742B2 (en) 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
US8723206B2 (en) 2011-09-09 2014-05-13 Samsung Electronics Co., Ltd. Semiconductor light emitting device with contact hole passing through active layer
EP2573827B1 (de) * 2011-09-23 2018-04-18 Samsung Electronics Co., Ltd. Lichtemittierendes Halbleiterbauelement
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
DE102011084363B4 (de) * 2011-10-12 2022-12-22 Pictiva Displays International Limited Organische Leuchtdiode
DE102012108627B4 (de) * 2012-09-14 2021-06-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Halbleitervorrichtung und Trägerverbund
DE102012218457A1 (de) * 2012-10-10 2014-04-10 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung
JP6071650B2 (ja) 2013-03-01 2017-02-01 スタンレー電気株式会社 半導体発光装置
DE102013103409A1 (de) 2013-04-05 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Modul
DE102013112881A1 (de) 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102015111485A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102015111487A1 (de) 2015-07-15 2017-01-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
US10263150B2 (en) 2016-05-10 2019-04-16 Rohm Co., Ltd. Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current
CN107437542B (zh) * 2017-07-31 2023-05-05 广东工业大学 一种紫外led芯片及其制备方法
CN110176438B (zh) * 2019-06-11 2021-06-08 厦门市三安光电科技有限公司 发光二极管
EP4030494A1 (de) 2021-01-19 2022-07-20 Excellence Opto. Inc. Vertikale leuchtdiodenstruktur mit hoher stromstreuung und hoher zuverlässigkeit
US11469345B2 (en) 2021-01-21 2022-10-11 Excellence Opto. Inc. Vertical light emitting diode structure with high current dispersion and high reliability
EP4060754B1 (de) 2021-03-19 2023-08-23 Excellence Opto. Inc. Leuchtdiodenkornstruktur mit mehreren kontaktpunkten
US11569418B2 (en) 2021-03-22 2023-01-31 Excellence Opto. Inc. Light-emitting diode grain structure with multiple contact points
US11869816B2 (en) 2021-07-26 2024-01-09 Excellence Opto. Inc. LED package with multiple test pads and parallel circuit elements
EP4125126A1 (de) 2021-07-28 2023-02-01 Excellence Opto. Inc. Led-gehäuse mit mehreren testpads und parallelen schaltungselementen

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US179914A (en) * 1876-07-18 Improvement in grates for brick-kilns
JPH11251644A (ja) * 1998-02-27 1999-09-17 Matsushita Electron Corp 半導体発光装置
DE19945134C2 (de) * 1999-09-21 2003-08-14 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung
TW492202B (en) 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
TW535307B (en) * 2002-03-04 2003-06-01 United Epitaxy Co Ltd Package of light emitting diode with protective diode
JP4492093B2 (ja) * 2003-10-27 2010-06-30 ソニー株式会社 半導体発光装置とその製造方法
DE102004005269B4 (de) * 2003-11-28 2005-09-29 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement mit einer Schutzdiode
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
TWI260795B (en) * 2004-03-22 2006-08-21 South Epitaxy Corp Flip chip type- light emitting diode package
CN1324719C (zh) * 2004-04-01 2007-07-04 光磊科技股份有限公司 一种发光二极管
CN100514635C (zh) * 2004-04-09 2009-07-15 晶元光电股份有限公司 倒装式发光二极管封装结构
US7825006B2 (en) * 2004-05-06 2010-11-02 Cree, Inc. Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
US7064353B2 (en) 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection
CN1291493C (zh) * 2004-07-02 2006-12-20 北京工业大学 用于发光管的抗静电保护电路
CN100386891C (zh) * 2004-07-02 2008-05-07 北京工业大学 高抗静电高效发光二极管及制作方法
KR100576872B1 (ko) 2004-09-17 2006-05-10 삼성전기주식회사 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자
JP4176703B2 (ja) * 2004-11-25 2008-11-05 松下電器産業株式会社 半導体発光装置、照明装置、携帯通信機器、カメラ、及び製造方法
KR20060062715A (ko) * 2004-12-06 2006-06-12 삼성전기주식회사 정전방전 보호 다이오드를 구비한 ＧａＮ 계열 반도체발광 소자
JP4697397B2 (ja) * 2005-02-16 2011-06-08 サンケン電気株式会社 複合半導体装置
TWI257186B (en) 2005-09-29 2006-06-21 Formosa Epitaxy Inc Light-emitting diode chip
JP2007157926A (ja) * 2005-12-02 2007-06-21 Sanken Electric Co Ltd 保護ダイオードを伴った半導体発光装置及びその製造方法
JP4978014B2 (ja) * 2006-01-30 2012-07-18 サンケン電気株式会社 半導体発光装置及びその製造方法
JP2007305844A (ja) 2006-05-12 2007-11-22 Stanley Electric Co Ltd 発光装置とその製造方法
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
KR20090022701A (ko) * 2007-08-31 2009-03-04 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007061479A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Überspannungsschutz
DE102008022942A1 (de) * 2008-05-09 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
US8084775B2 (en) * 2010-03-16 2011-12-27 Bridgelux, Inc. Light sources with serially connected LED segments including current blocking diodes

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