CN100514635C - 倒装式发光二极管封装结构 - Google Patents
倒装式发光二极管封装结构 Download PDFInfo
- Publication number
- CN100514635C CN100514635C CNB2004100337280A CN200410033728A CN100514635C CN 100514635 C CN100514635 C CN 100514635C CN B2004100337280 A CNB2004100337280 A CN B2004100337280A CN 200410033728 A CN200410033728 A CN 200410033728A CN 100514635 C CN100514635 C CN 100514635C
- Authority
- CN
- China
- Prior art keywords
- type
- flip
- package structure
- light
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007789 sealing Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 32
- 229910052737 gold Inorganic materials 0.000 claims description 27
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 238000005476 soldering Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 230000003068 static effect Effects 0.000 abstract description 14
- 230000006378 damage Effects 0.000 abstract description 11
- 230000005611 electricity Effects 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000002159 abnormal effect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100337280A CN100514635C (zh) | 2004-04-09 | 2004-04-09 | 倒装式发光二极管封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100337280A CN100514635C (zh) | 2004-04-09 | 2004-04-09 | 倒装式发光二极管封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1681121A CN1681121A (zh) | 2005-10-12 |
CN100514635C true CN100514635C (zh) | 2009-07-15 |
Family
ID=35067621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100337280A Expired - Lifetime CN100514635C (zh) | 2004-04-09 | 2004-04-09 | 倒装式发光二极管封装结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100514635C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4980126B2 (ja) * | 2007-04-20 | 2012-07-18 | 株式会社日立製作所 | フリーホイールダイオードとを有する回路装置 |
DE102008022942A1 (de) * | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
CN101859756B (zh) * | 2009-04-07 | 2014-12-17 | 宁波璨圆光电有限公司 | 交流式覆晶发光二极管结构及其制造方法 |
CN104103634A (zh) * | 2009-04-07 | 2014-10-15 | 宁波璨圆光电有限公司 | 交流式覆晶发光二极管结构 |
CN102956805B (zh) * | 2011-08-30 | 2017-03-22 | 晶元光电股份有限公司 | 发光元件 |
CN106309278B (zh) * | 2016-08-31 | 2020-05-08 | 澳宝化妆品(惠州)有限公司 | 用于抗衰老化妆品的龙舌兰发酵物及其制备方法和应用 |
CN109037411A (zh) * | 2018-07-27 | 2018-12-18 | 西安电子科技大学 | 基于Sn离子注入的氮化物光电转换结构及制备方法 |
CN111129274A (zh) * | 2019-12-31 | 2020-05-08 | 广东省半导体产业技术研究院 | 一种微led器件及阵列 |
-
2004
- 2004-04-09 CN CNB2004100337280A patent/CN100514635C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1681121A (zh) | 2005-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: JINGYUAN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: YUANSHEN PHOTOELECTRIC SCIENCE-TECHNOLOGY CO., LTD. Effective date: 20080215 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20080215 Address after: Taiwan, Hsinchu, China Science Park five line 5 Applicant after: EPISTAR Corp. Address before: County of Tainan province Taiwan Science Park Tainan New Town township Dashun Road No. 16 nine Applicant before: SOUTH EPITAXY CORPORATION |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20090715 |