WO2008084834A1 - Elément électroluminescent semi-conducteur à base de gan - Google Patents

Elément électroluminescent semi-conducteur à base de gan Download PDF

Info

Publication number
WO2008084834A1
WO2008084834A1 PCT/JP2008/050213 JP2008050213W WO2008084834A1 WO 2008084834 A1 WO2008084834 A1 WO 2008084834A1 JP 2008050213 W JP2008050213 W JP 2008050213W WO 2008084834 A1 WO2008084834 A1 WO 2008084834A1
Authority
WO
WIPO (PCT)
Prior art keywords
contact layer
type gan
gan contact
light emitting
emitting element
Prior art date
Application number
PCT/JP2008/050213
Other languages
English (en)
Japanese (ja)
Inventor
Yukio Shakuda
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2008084834A1 publication Critical patent/WO2008084834A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention a pour objet un élément électroluminescent semi-conducteur à base de GaN empêchant la diffusion d'Au dans une électrode transparente composée d'un film métallique à couches multiples comprenant un film d'Au. Une couche tampon de GaN (2), une couche de contact de GaN de type n (3), une couche active à multiples puits quantiques (4) et une couche de contact de GaN de type p (5) sont laminées dans cet ordre sur un substrat de saphir (1). Une pointe d'électrode à table de côté n (8) est formée sur une surface à partir de laquelle la couche de contact de GaN de type n (3) est exposée. Une électrode transparente à film métallique à couches multiples (6) disposée sur la couche de contact de GaN de type p (5) tout entière est, par exemple, composée de Ni/Au/Ti/Ni, en partant du côté de la couche de contact de GaN de type p (5). La diffusion d'Au est évitée grâce au Ti, qui sert de couche métallique empêchant la diffusion d'Au.
PCT/JP2008/050213 2007-01-11 2008-01-10 Elément électroluminescent semi-conducteur à base de gan WO2008084834A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-003457 2007-01-11
JP2007003457A JP2008171997A (ja) 2007-01-11 2007-01-11 ＧａＮ系半導体発光素子

Publications (1)

Publication Number Publication Date
WO2008084834A1 true WO2008084834A1 (fr) 2008-07-17

Family

ID=39608721

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050213 WO2008084834A1 (fr) 2007-01-11 2008-01-10 Elément électroluminescent semi-conducteur à base de gan

Country Status (3)

Country Link
JP (1) JP2008171997A (fr)
TW (1) TW200835000A (fr)
WO (1) WO2008084834A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182050A (ja) * 2007-01-24 2008-08-07 Mitsubishi Chemicals Corp ＧａＮ系発光ダイオード素子

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5211996B2 (ja) 2008-09-30 2013-06-12 豊田合成株式会社 発光装置
KR101761834B1 (ko) * 2011-01-28 2017-07-27 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP2012175089A (ja) * 2011-02-24 2012-09-10 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
KR101737981B1 (ko) 2011-05-17 2017-05-22 한국전자통신연구원 마이크로 어레이 형태의 질화물 발광 소자 및 그 제조 방법
CN103489887B (zh) * 2013-09-14 2016-04-13 江苏新广联科技股份有限公司 用于GaN基半导体LED芯片的绝缘结构及其制造工艺
JP2016103646A (ja) * 2015-12-14 2016-06-02 富士通株式会社 半導体装置及び半導体装置の製造方法
CN112885717A (zh) * 2021-01-15 2021-06-01 广州爱思威科技股份有限公司 半导体器件的金属电极及其制造方法、以及其应用

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145076A (ja) * 1997-11-11 1999-05-28 Sony Corp オーミック電極およびその形成方法ならびにオーミック電極のための積層体
JPH11150297A (ja) * 1997-11-14 1999-06-02 Nichia Chem Ind Ltd 窒化物半導体発光素子
JPH11274554A (ja) * 1998-03-26 1999-10-08 Toshiba Corp ＩＩＩ−Ｖ族化合物半導体発光素子のｐ側電極及びＩＩＩ−Ｖ族化合物半導体発光素子
JP3068914U (ja) * 1999-11-11 2000-05-26 洲磊科技股▲ふん▼有限公司 フリップ―チップ発光デバイス
US20020000643A1 (en) * 1996-05-31 2002-01-03 Toshiya Uemura Devices related to electrode pads for p-type group iii nitride compound semiconductors
EP1276186A1 (fr) * 2000-02-16 2003-01-15 Nichia Corporation Dispositif de laser semiconducteur au nitrure
JP2004040061A (ja) * 2002-07-08 2004-02-05 Sumitomo Chem Co Ltd ３−５族化合物半導体の電極、その製造方法及びそれを用いた半導体発光素子
US20060081834A1 (en) * 2004-10-18 2006-04-20 Sanken Electric Co., Ltd. Semiconductor luminescent device and manufacturing method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020000643A1 (en) * 1996-05-31 2002-01-03 Toshiya Uemura Devices related to electrode pads for p-type group iii nitride compound semiconductors
JPH11145076A (ja) * 1997-11-11 1999-05-28 Sony Corp オーミック電極およびその形成方法ならびにオーミック電極のための積層体
JPH11150297A (ja) * 1997-11-14 1999-06-02 Nichia Chem Ind Ltd 窒化物半導体発光素子
JPH11274554A (ja) * 1998-03-26 1999-10-08 Toshiba Corp ＩＩＩ−Ｖ族化合物半導体発光素子のｐ側電極及びＩＩＩ−Ｖ族化合物半導体発光素子
JP3068914U (ja) * 1999-11-11 2000-05-26 洲磊科技股▲ふん▼有限公司 フリップ―チップ発光デバイス
EP1276186A1 (fr) * 2000-02-16 2003-01-15 Nichia Corporation Dispositif de laser semiconducteur au nitrure
JP2004040061A (ja) * 2002-07-08 2004-02-05 Sumitomo Chem Co Ltd ３−５族化合物半導体の電極、その製造方法及びそれを用いた半導体発光素子
US20060081834A1 (en) * 2004-10-18 2006-04-20 Sanken Electric Co., Ltd. Semiconductor luminescent device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182050A (ja) * 2007-01-24 2008-08-07 Mitsubishi Chemicals Corp ＧａＮ系発光ダイオード素子

Also Published As

Publication number Publication date
TW200835000A (en) 2008-08-16
JP2008171997A (ja) 2008-07-24

Similar Documents

Publication Publication Date Title
WO2008084834A1 (fr) Elément électroluminescent semi-conducteur à base de gan
TWI275190B (en) Positive electrode for semiconductor light-emitting device
US8564009B2 (en) Vertical light emitting device
TWI256152B (en) Flip-chip type nitride semiconductor light emitting diode
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
WO2008112064A3 (fr) Dispositifs électroluminescents à structures de réduction de courant et procédés de production de dispositifs électroluminescents à structures de réduction de courant
TW200637035A (en) Flip chip type nitride semiconductor light emitting device
TW200618355A (en) Semiconductor light-emitting device and its manufacturing method
TW200601592A (en) High reflectivity p-contact for InGaN LEDs
JP2010531058A5 (fr)
TW200620704A (en) Nitride-based compound semiconductor light emitting device
JP2008244503A5 (fr)
EP2388836A3 (fr) Diode électroluminescente à haute efficacité et son procédé de fabrication
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
JP2009043934A (ja) フリップチップ型発光素子
TW200618349A (en) Transparent electrode for semiconductor light-emitting device
TW200618360A (en) Semiconductor luminescent device and manufacturing method therefor
TW200739949A (en) Gallium nitride type compound semiconductor light-emitting device and process for producing the same
TW200608609A (en) Nitride semiconductor device
TW200717863A (en) Gallium nitride-based compound semiconductor light-emitting device
WO2010150114A3 (fr) Contact pour un dispositif électroluminescent à semi-conducteurs
EP1734590A3 (fr) Dispositif émetteur de lumière
TW200601594A (en) Positive electrode structure and gallium nitride-based compound semiconductor light-emitting device
WO2008120432A1 (fr) Structure d'électrode ohmique et élément semi-conducteur
JP5799354B2 (ja) Ｇａ２Ｏ３系半導体素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08703077

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08703077

Country of ref document: EP

Kind code of ref document: A1