DE60215019D1 - Trennung von integrierten optischen modulen und strukturen - Google Patents

Trennung von integrierten optischen modulen und strukturen

Info

Publication number
DE60215019D1
DE60215019D1 DE60215019T DE60215019T DE60215019D1 DE 60215019 D1 DE60215019 D1 DE 60215019D1 DE 60215019 T DE60215019 T DE 60215019T DE 60215019 T DE60215019 T DE 60215019T DE 60215019 D1 DE60215019 D1 DE 60215019D1
Authority
DE
Germany
Prior art keywords
structures
separation
integrated optical
optical modules
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60215019T
Other languages
English (en)
Other versions
DE60215019T2 (de
Inventor
D Kathman
Hongtao Han
Jay Mathews
Barnett Hammond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DigitalOptics Corp East
Original Assignee
Tessera North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tessera North America Inc filed Critical Tessera North America Inc
Publication of DE60215019D1 publication Critical patent/DE60215019D1/de
Application granted granted Critical
Publication of DE60215019T2 publication Critical patent/DE60215019T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02315Support members, e.g. bases or carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4274Electrical aspects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor
    • Y10T156/1052Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Dicing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Communication System (AREA)
  • Micromachines (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Led Devices (AREA)
DE60215019T 2001-03-06 2002-03-05 Trennung von integrierten optischen modulen und strukturen Expired - Lifetime DE60215019T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US27332101P 2001-03-06 2001-03-06
US273321P 2001-03-06
US09/983,278 US6798931B2 (en) 2001-03-06 2001-10-23 Separating of optical integrated modules and structures formed thereby
US983278 2001-10-23
PCT/US2002/006688 WO2002071560A2 (en) 2001-03-06 2002-03-05 Separating of optical integrated modules and structures formed thereby

Publications (2)

Publication Number Publication Date
DE60215019D1 true DE60215019D1 (de) 2006-11-09
DE60215019T2 DE60215019T2 (de) 2007-04-05

Family

ID=26956107

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60215019T Expired - Lifetime DE60215019T2 (de) 2001-03-06 2002-03-05 Trennung von integrierten optischen modulen und strukturen

Country Status (9)

Country Link
US (4) US6798931B2 (de)
EP (1) EP1415374B1 (de)
JP (2) JP4474588B2 (de)
CN (1) CN100440651C (de)
AT (1) ATE341118T1 (de)
AU (1) AU2002252197A1 (de)
CA (1) CA2439010C (de)
DE (1) DE60215019T2 (de)
WO (1) WO2002071560A2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby
US7961989B2 (en) * 2001-10-23 2011-06-14 Tessera North America, Inc. Optical chassis, camera having an optical chassis, and associated methods
US7224856B2 (en) 2001-10-23 2007-05-29 Digital Optics Corporation Wafer based optical chassis and associated methods
WO2004068665A2 (en) * 2003-01-24 2004-08-12 The Board Of Trustees Of The University Of Arkansas Research And Sponsored Programs Wafer scale packaging technique for sealed optical elements and sealed packages produced thereby
CA2523418C (en) * 2003-03-26 2011-05-03 Digital Optics Corporation Package for optoelectronic device on wafer level and associated methods
JP2007165789A (ja) * 2005-12-16 2007-06-28 Olympus Corp 半導体装置の製造方法
US20070236591A1 (en) * 2006-04-11 2007-10-11 Tam Samuel W Method for mounting protective covers over image capture devices and devices manufactured thereby
US7278853B1 (en) 2006-06-20 2007-10-09 International Business Machines Corporation Power card connection structure
KR20090083932A (ko) * 2006-11-17 2009-08-04 테쎄라 노쓰 아메리카, 아이엔씨. 광학 스택을 이용해 카메라 시스템의 내부 노이즈를 줄이는 구조 및 방법
US8456560B2 (en) * 2007-01-26 2013-06-04 Digitaloptics Corporation Wafer level camera module and method of manufacture
CA2685080A1 (en) 2007-04-24 2008-11-06 Flextronics Ap Llc Small form factor modules using wafer level optics with bottom cavity and flip-chip assembly
US20090159200A1 (en) * 2007-12-19 2009-06-25 Heptagon Oy Spacer element and method for manufacturing a spacer element
US7710667B2 (en) * 2008-06-25 2010-05-04 Aptina Imaging Corp. Imaging module with symmetrical lens system and method of manufacture
US7773317B2 (en) * 2008-07-01 2010-08-10 Aptina Imaging Corp. Lens system with symmetrical optics
EP2261977A1 (de) 2009-06-08 2010-12-15 STMicroelectronics (Grenoble) SAS Kameramodul und sein Herstellungsverfahren
US9419032B2 (en) 2009-08-14 2016-08-16 Nanchang O-Film Optoelectronics Technology Ltd Wafer level camera module with molded housing and method of manufacturing
CN102738013B (zh) * 2011-04-13 2016-04-20 精材科技股份有限公司 晶片封装体及其制作方法
TW201417250A (zh) * 2012-07-17 2014-05-01 海特根微光學公司 光學模組,特別是光電模組,及其製造方法
WO2019205153A1 (zh) * 2018-04-28 2019-10-31 深圳市大疆创新科技有限公司 激光二极管封装模块及发射装置、测距装置、电子设备
EP4182747A1 (de) * 2020-07-20 2023-05-24 Apple Inc. Photonische integrierte schaltungen mit chipverbindungen mit gesteuertem kollaps

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422115B2 (de) * 1972-05-19 1979-08-04
US3947840A (en) * 1974-08-16 1976-03-30 Monsanto Company Integrated semiconductor light-emitting display array
US4945400A (en) * 1988-03-03 1990-07-31 At&T Bell Laboratories Subassembly for optoelectronic devices
US5023881A (en) * 1990-06-19 1991-06-11 At&T Bell Laboratories Photonics module and alignment method
US5214535A (en) * 1991-12-17 1993-05-25 Xerox Corporation Lens cover assembly for binary diffractive optic lenses
DE4220284C1 (de) 1992-06-20 1993-09-30 Bosch Gmbh Robert Verfahren zum Zerteilen von Verbundwafern
US5739048A (en) * 1994-05-23 1998-04-14 International Business Machines Corporation Method for forming rows of partially separated thin film elements
DE19508222C1 (de) * 1995-03-08 1996-06-05 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
JP3233837B2 (ja) * 1995-10-05 2001-12-04 松下電器産業株式会社 半導体レーザ装置及び光ピックアップ装置
DE19601955C2 (de) * 1996-01-09 1997-12-11 Siemens Ag Optoelektronische Sendebaugruppe
US5801800A (en) * 1996-04-29 1998-09-01 Motorola, Inc. Visual display system for display resolution enhancement
US5703394A (en) * 1996-06-10 1997-12-30 Motorola Integrated electro-optical package
US6025767A (en) * 1996-08-05 2000-02-15 Mcnc Encapsulated micro-relay modules and methods of fabricating same
US6096155A (en) * 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
JPH10335383A (ja) * 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH1140520A (ja) * 1997-07-23 1999-02-12 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
US6669803B1 (en) * 1997-10-03 2003-12-30 Digital Optics Corp. Simultaneous provision of controlled height bonding material at a wafer level and associated structures
TW408497B (en) * 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus
JPH11163412A (ja) * 1997-11-25 1999-06-18 Matsushita Electric Works Ltd Led照明装置
JPH11237850A (ja) * 1998-02-23 1999-08-31 Nokeg & G Opt Electronics Kk Led表示装置
US6150188A (en) * 1998-02-26 2000-11-21 Micron Technology Inc. Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same
US6271102B1 (en) 1998-02-27 2001-08-07 International Business Machines Corporation Method and system for dicing wafers, and semiconductor structures incorporating the products thereof
JPH11261110A (ja) * 1998-03-13 1999-09-24 Omron Corp 発光装置およびそれに用いられる上面電極接続部材
US6597713B2 (en) * 1998-07-22 2003-07-22 Canon Kabushiki Kaisha Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
JP2000049414A (ja) * 1998-07-27 2000-02-18 Canon Inc 光機能素子装置、これを用いた光送受信装置、光インターコネクション装置および光記録装置
JP3516592B2 (ja) * 1998-08-18 2004-04-05 沖電気工業株式会社 半導体装置およびその製造方法
FR2783354B1 (fr) * 1998-08-25 2002-07-12 Commissariat Energie Atomique Procede collectif de conditionnement d'une pluralite de composants formes initialement dans un meme substrat
JP2000106458A (ja) * 1998-09-29 2000-04-11 Matsushita Electronics Industry Corp 画像書込み用発光装置
JP2000114604A (ja) * 1998-09-30 2000-04-21 Fuji Photo Film Co Ltd 発光素子アレイおよびその製造方法
US6588949B1 (en) * 1998-12-30 2003-07-08 Honeywell Inc. Method and apparatus for hermetically sealing photonic devices
JP4144676B2 (ja) * 1999-01-18 2008-09-03 ローム株式会社 チップ型発光ダイオードの製造方法
JP2000236111A (ja) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd 光源装置
JP2000294831A (ja) * 1999-04-08 2000-10-20 Omron Corp 半導体発光装置、半導体発光装置アレイ、フォトセンサおよびフォトセンサアレイ
US6496612B1 (en) * 1999-09-23 2002-12-17 Arizona State University Electronically latching micro-magnetic switches and method of operating same
EP1108677B1 (de) * 1999-12-15 2006-09-27 Asulab S.A. Hermetische In-Situ-Gehäusungsmethode von Mikrosystemen
US20020068373A1 (en) * 2000-02-16 2002-06-06 Nova Crystals, Inc. Method for fabricating light emitting diodes
US6780661B1 (en) * 2000-04-12 2004-08-24 Finisar Corporation Integration of top-emitting and top-illuminated optoelectronic devices with micro-optic and electronic integrated circuits
US6472758B1 (en) * 2000-07-20 2002-10-29 Amkor Technology, Inc. Semiconductor package including stacked semiconductor dies and bond wires
US6600224B1 (en) * 2000-10-31 2003-07-29 International Business Machines Corporation Thin film attachment to laminate using a dendritic interconnection
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby
US6580153B1 (en) * 2001-03-14 2003-06-17 Amkor Technology, Inc. Structure for protecting a micromachine with a cavity in a UV tape
KR100431181B1 (ko) * 2001-12-07 2004-05-12 삼성전기주식회사 표면 탄성파 필터 패키지 제조방법
US6972480B2 (en) * 2003-06-16 2005-12-06 Shellcase Ltd. Methods and apparatus for packaging integrated circuit devices

Also Published As

Publication number Publication date
CA2439010A1 (en) 2002-09-12
US6777311B2 (en) 2004-08-17
US20020126940A1 (en) 2002-09-12
US6798931B2 (en) 2004-09-28
CA2439010C (en) 2009-10-27
CN100440651C (zh) 2008-12-03
WO2002071560A2 (en) 2002-09-12
US7208771B2 (en) 2007-04-24
WO2002071560A3 (en) 2004-02-19
EP1415374B1 (de) 2006-09-27
ATE341118T1 (de) 2006-10-15
EP1415374A2 (de) 2004-05-06
JP2004535660A (ja) 2004-11-25
CN1666391A (zh) 2005-09-07
JP2010068001A (ja) 2010-03-25
US20070200132A1 (en) 2007-08-30
AU2002252197A1 (en) 2002-09-19
US20020126941A1 (en) 2002-09-12
JP4474588B2 (ja) 2010-06-09
DE60215019T2 (de) 2007-04-05
US20050035463A1 (en) 2005-02-17

Similar Documents

Publication Publication Date Title
ATE341118T1 (de) Trennung von integrierten optischen modulen und strukturen
DE59912676D1 (de) Leistungshalbleitermodul
CA2427293A1 (en) Improved assembly of modules with magnetic anchorage for the construction of stable grid structures
DE60227232D1 (de) Halbleiterlaserstruktur
DE60221426D1 (de) SOLARZELLE MIT RÜCKSEITE-KONTAKT und HERSTELLUNGSVERFAHREN dazu
DE60030279D1 (de) Halbleiterbasis, ihre herstellungsmethode und halbleiterkristallherstellungsmethode
DE59008471D1 (de) Leistungshalbleitermodul.
DE60001211T2 (de) Fasergitter-stabilisierte halbleiter-pumpquelle
DE602004005454D1 (de) Electrischer Verbinder
NL1013625A1 (nl) Laterale hoogspanning halfgeleiderinrichting.
DE602004014006D1 (de) Doppel-polarisierte antennengruppe und herstellungsverfahren dafür
WO2003001609A3 (en) Back reflector of solar cells
AU2003244962A1 (en) Semiconductor device with edge structure
EP1432036A3 (de) Halbleiterbauelement und Belastungsschaltkreis
DE59610548D1 (de) Leistungshalbleitermodul
DE50202931D1 (de) Halbleiterstruktur mit feldplatte
DE60032651D1 (de) Halbleitermodul
DE59912422D1 (de) Halbleiterlaser mit Gitterstruktur
WO2003105189A3 (en) CONSTRAINED SEMICONDUCTOR DEVICE STRUCTURES ON INSULATION
DE50113060D1 (de) Halbleiter-leistungsbauelement
DE50214896D1 (de) Gruppe von mindestens zwei elektrischen verbindungsmodulen
IT9047587A0 (it) Componente semiconduttore di potenza, cellulare.
IT1313260B1 (it) Dispositivo fotosensore integrato su semiconduttore e relativoprocesso di fabbricazione.
WO2004004023A8 (en) Photoelectric cell
DE60222450D1 (de) Halbleiterlaserelement und lasermodul mit diesem element

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TESSERA NORTH AMERICA.INC.(N. D. GES. D. STAAT, US

R082 Change of representative

Ref document number: 1415374

Country of ref document: EP

Representative=s name: PATENTANWAELTE VON KREISLER, SELTING, WERNER, 5066